a 0.2-to-1.45ghz subsampling fractional-n all-digital mdll...
TRANSCRIPT
1
A 0.2-to-1.45GHz Subsampling
Fractional-N All-Digital MDLL with Zero-Offset Aperture PD-Based Spur
Cancellation and In-Situ Timing Mismatch Detection
Somnath Kundu1, Bongjin Kim1,2, Chris H. Kim1
1Dept. of ECE, University of Minnesota, Minneapolis, MN2Rambus Inc., Sunnyvale, CA
2
Outline
• Background: PLL vs. MDLL
• Reference Spur Cancellation
• In-situ Reference Spur Detection
• 65nm Test Chip Architecture
• Measurement Results
• Conclusion
3
PLL based Clock Generation
• VCO phase noise is filtered by PLL loop
bandwidth
• Maximum PLL bandwidth is roughly fREF/10
4
Multiplying DLL (MDLL) based PLL
• VCO phases are periodically replaced by
reference phases
• Main advantage: Phase noise suppression
above the PLL bandwidth
Ref: S. Ye, et al., JSSC’2000
5
Reference Spur Issue in MDLL
• Mismatch in phase detection and reference
injection path causes reference spur
• Divider delay and phase detector (PD) fixed
offset are significant source of mismatch
PD
Multiplexed
Ring VCO
Divider
REF
OUTDIV
ΔT1
ΔT2
ΔT1: PD offset
ΔT2: Divider delay
REF
OUT
DIV
ΔT=ΔT1+ΔT2
2T
T+ΔT T-ΔT
ΔT
fOUT +fREF-fREF
spurspurOutput
Spectrum
6
Outline
• Background: PLL vs. MDLL
• Reference Spur Cancellation
• In-situ Reference Spur Detection
• 65nm Test Chip Architecture
• Measurement Results
• Conclusion
7
Reference and DCO Phase Realignment
PD
Divider
REF
OUTDIV
DTC
ΔT
REF'
• Additional reference delay in phase detection
path cancels spur
• Challenge: Delay should be adjusted and
tracked precisely
8
Reference and DCO Phase Realignment
• Phase detector for reference and DCO phase
realignment should have no inherent phase
offset
9
Zero-offset Aperture Phase Detector
• Latch based PD has ideally
zero phase offset
10
Outline
• Background: PLL vs. MDLL
• Reference Spur Cancellation
• In-situ Reference Spur Detection
• 65nm Test Chip Architecture
• Measurement Results
• Conclusion
11
Drawback in Off-chip Measurement
• Requires high frequency probes or packages,
off-chip drivers and connectors
• Each of these components introduces
inaccuracy in the measurement
12
Error Rate Calculation
D Q
CK
Prog. delay
(Tp)
CKOUT
Error Rate =Avg(TOUT)
TCK
• Error pulse generated when programmable
delay is larger than clock period
TCK1
TpTCK1
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Error Rate Calculation
• Skew between two error rate plot is the time
period difference
TCK1
TpTCK1
TpTCK2
TCK2
ΔT
ΔT
D Q
CK
Prog. delay
(Tp)
CKOUT
Error Rate =Avg(TOUT)
TCK
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Timing Mismatch Detection from Error Rate Calculation
• S0 selects 1st clk period, S1 selects 2nd, and so on
• Error rate is calculated for each selection
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Timing Mismatch Detection from Error Rate Calculation
Err
or
rate
Err
or
rate
• In-situ time domain measurement of phase
mismatch in MDLL
16
Outline
• Background: PLL vs. MDLL
• Reference Spur Cancellation
• In-situ Reference Spur Detection
• 65nm Test Chip Architecture
• Measurement Results
• Conclusion
17
Proposed MDLL Architecture
OUTREF
Sel.
logic
5
Zero-
offset
APD
ʃ 10
5:1
Fractional FD
Edge
counter
Sel.
logicFRAC<1:0>
Phase locking path
INT<7:0>
5
ʃ
Frequency
locking path
Ref. injection path
D Q
CK
KFKP
KI ʃ
DLF1-bit
SSPD
In-situ time
domain
mismatch
detection
DOUT
REF
MDLL operation sequence
FLL PLLSpur
cancellationMDLL
One time operation
LDO
Spur
cancellation
circuit
ΔΣ
S0-S4
6
Spur
cancellation
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Frequency Locking
OUTREF
Sel.
logic
5
Zero-
offset
APD
ʃ 10
5:1
Fractional FD
Edge
counter
Sel.
logicFRAC<1:0>
INT<7:0>
5
ʃ
Frequency
locking path
D Q
CK
KFKP
KI ʃ
In-situ time
domain
mismatch
detection
DOUT
REF
MDLL operation sequence
FLL PLLSpur
cancellationMDLL
LDO
ΔΣ
S0-S4
6
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Phase Locking
OUTREF
Sel.
logic
5
Zero-
offset
APD
ʃ 10
5:1
Edge
counter
Sel.
logicFRAC<1:0>
Phase locking path
INT<7:0>
5
ʃ
D Q
CK
KFKP
KI ʃ
DLF1-bit
SSPD
In-situ time
domain
mismatch
detection
DOUT
REF
MDLL operation sequence
FLLSpur
cancellationMDLL
LDO
ΔΣ
S0-S4
6
PLL
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Spur Cancellation
OUTREF
Sel.
logic
5
Zero-
offset
APD
ʃ 10
5:1
Edge
counter
Sel.
logicFRAC<1:0>
INT<7:0>
5
ʃ
D Q
CK
KFKP
KI ʃ
DLF1-bit
SSPD
In-situ time
domain
mismatch
detection
DOUT
REF
MDLL operation sequence
FLLSpur
cancellationMDLL
LDO
ΔΣ
S0-S4
6
PLL
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Reference Injection
OUTREF
Sel.
logic
5
Zero-
offset
APD
ʃ 10
5:1
Edge
counter
Sel.
logicFRAC<1:0>
INT<7:0>
5
ʃ
D Q
CK
KFKP
KI ʃ
DLF1-bit
SSPD
In-situ time
domain
mismatch
detection
DOUT
REF
MDLL operation sequence
FLLSpur
cancellationMDLL
LDO
ΔΣ
S0-S4
6
PLL
Ref. injection path
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Key Design Features
• Subsampling 1-bit phase detector for in-band
noise reduction
• Fractional-N MDLL by periodic rotation of
multiple DCO phases
• Phase mismatch cancellation loop with zero-
offset aperture phase detection
• In-situ phase mismatch detection in time
domain
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Reference Realigned DCO
Fine<9:0>
x10240
1
0
1
0
1
Φ0
S3 S2S0
Φ3 Φ2
Distributed switched capacitor elements
x16
REF 0
1
Enable MDLL
Replica path
...
...
...
Fre
qu
en
cy (
MH
z)
• Replica path matches the
rise time of injected
reference and DCO phase
24
Outline
• Background: PLL vs. MDLL
• Reference Spur Cancellation
• In-situ Reference Spur Detection
• 65nm Test Chip Architecture
• Measurement Results
• Conclusion
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Measured Error Rate for Mismatch
Detection
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MDLL Fractional Spur
• Spurs at the multiple of fREF/5 are cancelled
by the cancellation circuit
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Measured Output Spectrum and Phase Noise
Output Spectrum Phase Noise
• Input frequency 87.5MHz, output frequency
1.4175GHz
• MDLL shows 9dB lower noise than PLL at
100kHz offset
28
Performance Comparison Table
This
Work
[6]
ISSCC’15
[1]
ISSCC’14
[3]
ISSCC’12
Architecture MDLL Soft IL-PLL MDLL IL-PLL
Process 65nm 65nm 65nm 65nm
Output frequency/Range (GHz)
1.4175/(0.2 –1.45)
1.5222/(0.8 –1.7)
1.651/(1.6 – 1.9)
0.581/(0.58 – 0.611)
Ref. frequency
(MHz)87.5 380 50 32
Power (mW) 8 3 3 10.5
Intg. RMS jitter
(ps)2.8 (0.39%)
(10kHz – 10MHz)
3.6 (0.55%)(1kHz – 100MHz)
1.4 (0.23%)(30kHz – 30MHz)
8 (0.46%)(100Hz – 40MHz)
FoM * (dB) -222 -224 -232 -211
Area (mm2) 0.054 0.048 0.4 0.083
*FoM=20log(σ/1s)+10log(P/1mW)
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Die Photo and Result Summary
PLL MDLL
Technology CMOS 65nm, 1.2V
Output frequencyInteger: 1.4GHz
Fraction: 1.4175GHz
Frequency range 0.2 –1.45 GHz
DCO type 5-stage ring oscillator
In-band PN(dBc/Hz
@100kHz)
Integer -92 -108
Fraction -87 -96
Integ. RMSjitter
(10kHz-10MHz)
Integer 8.1ps 2ps
Fraction 11.7ps 2.8ps
Power
(mW)
DCO 4.5
Total 8.0
FOM
(dB)
Integer -212.8 -225
Fraction -209 -222
AreaCore 180µm x 300µm
Total 300µm x 400µm
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Conclusion
• Subsampling fractional-N all-digital MDLL
designed in 65nm CMOS
• Zero-offset aperture phase detector based
spur cancellation circuit is implemented for
reference and DCO phase alignment
• First in-situ detection circuit to measure the
mismatch between reference and DCO phase
in time domain
• MDLL measurement result shows 9dB lower
phase noise than PLL at 100kHz offset