8/16/06

1

JEOL JBX-9300FSElectron Beam Lithography System

Georgia TechMicroelectronics Research Center

Enabling Nanotechnology

8/16/06

2

Nanoimprint Embossing StampsResearcher: Andrew Ballinger*, Devin Brown**

*University of North Texas, **Georgia Tech Microelectronics Research Center

3.5nm gap

20 um

EBL Plasma Etch NIL

e- e- e- e- e-

80nm line70nm space11nm

30nmdiameter

7nm

150nm line 80nm line

HSQ resist

Silicon substratespin coat

exposure

develop

resist trim

silicon etch

resist strip

stamp

imprint

resist strip

PMMA resist

oxideSilicon substrate

10 HOURS!!

10 MINUTES!! / REUSABLE

8/16/06

3

Nanopatterned Protein ArraysGraduate Student: Sean Coyer, PI: Andres Garcia

Biomedical Engineering, Georgia Tech

E-beam Lithography is used to produce patterned arrays presenting adhesive protein islands within non-fouling background to analyze cell adhesion.

proteinpattern

500 nm

250 nm

5 m

100 m cells

EBL + metal lift-off

PR

Au

protein resistant groupadhesive protein

Si

8/16/06

4

Nanoscale ResonatorResearcher: Michael Kranz*, Mark Allen**

*Stanley Associates, **Georgia Tech Electrical Engineering

3.5nm gap20 um

An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for signals in the 100's to 1000's of MHz. A two-step hybrid lithographic approach allowed the large features of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia Tech's JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon dioxide film that served as a release layer during a standard HF oxide etch. Patterning was accomplished through first exposing a PMMA electron beam resist and subsequently transferring that pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon.

8/16/06

5

Chemically Amplified Resist for Nanoscale PatternsResearcher: Cheng-Tsung Lee, Cliff Henderson

Georgia Tech Chemical and Biological Engineering

3.5nm gap20 um

Film thickness: 75nmShot pitch: 10nmCurrent: 2nA; Dose: 120 uC/cm2

Patterns on nitride membrane

30 nm half pitch pattern on novel EUV resist

High acceleration voltage (100kV) electron-beam lithography on ultra-thin silicon nitride substrate provide the excellent tool in determining the intrinsic resolution of the novel chemically amplified resists.

Novel EUV resist shows the inherent resolution in patterning 30 nm half pitch line/sapce array with low CD variation and LER.

8/16/06

6

CPP-GMR spin valvesResearcher: Cristian Papusoi, Su Gupta

University of Alabama at Tuscaloosa

3.5nm gap20 um

SV pillar (stack) 9 m diameter

Contact hole (100 nm diameter)

Top lead

Bottom lead

-4 -3 -2 -1 0 1 2 3 4

-1.0

-0.5

0.0

0.5

1.0

Ta(2.5)/Cr(5)/CoPt(5)/CoFe(0.7)/Cu(2.5)/CoFe(1)/NiFe(3)/Ta(5)

M/M

S

H (kOe)

-4 -2 0 2 40

1

2

3

4

5 field increase field decrease

Rinit

= 6.74158

Ta(2.5)/Cr(5)/CoPt(5)/CoFe(0.7)/Cu(2.5)/CoFe(1)/NiFe(3)/Ta(5)

MR

(%

)H (kOe)

Giant MagnetoResistive (GMR) devices are potential candidates for magnetic read heads. The Current Perpendicular to the Plane (CPP) geometry, when the current is flowing perpendicular to the film plane, is expected to deliver the maximum sensitivity (GMR ratio).

8/16/06

7

Research is being done on advanced dielectric materials for creating 40 nm and below interconnect lines to meet ITRS objectives for the 32 nm technology node.

ZEP520A resist

SiO2

Silicon substrate

Advanced Dielectrics and Lithography for Interconnects Roey Shaviv, Novellus

Devin Brown, Georgia Tech

Dielectric test structure

8/16/06

8

Resonant cavity photonic crystal pattern that resonate at 1.55um wavelength, infra-red.

SOI Photonic CrystalsResearcher: John Blair*, Stephen Ralph**

*Georgia Tech Material Science, **Electrical Engineering

8/16/06

9

70nm diameter holes in 80nm Aluminum on quartz substrate using lift-off technique.

Optical Diffractive ElementResearcher: Anonymous External Customer, Devin Brown

Georgia Tech

8/16/06

10

Nanometer GapsResearcher: Raghunath Murali, Farhana Zaman

Georgia Tech Microelectronics Research Center

• Si substrate, Resist : 47 nm thick PMMA• E-beam lithography with 2 nA current, 100 kV acc. voltage• Metal liftoff process with 5 nm Cr adhesion layer and 10 nm Au

3.5nm gap

13.2 nm gap

20 um

8/16/06

11

NanoresonatorResearcher: John Perng, Farrokh Ayazi

Georgia Tech Electrical Engineering

capacitive block resonator

37nm-wide electrode gap

• High frequency MEMS resonator are used in many different applications, such as RF oscillator, on-chip frequency reference, biosensor, etc.• Capacitive-based resonator requires small electrode gap to increase signal to noise ratio and to lower motional impedance• The goal of this project is to characterize the limit of nano trench etching in Si (10nm-wide, max depth?) and produce working device with sub-100nm gap

8/16/06

12

Negative Index Photonic Crystal SuperprismsResearcher: Babak Momeni, Ali Adibi

Georgia Tech Electrical Engineering

• beams of different wavelengths propagate in different directions inside the PC (superprism effect)• negative refraction of the separated channels results in their separation from undesired light (noise, scattering, unwanted polarization, and out-of-range wavelengths) in the incident beam, thus reducing the overall noise level• four channels are separated in this device with a wavelength spacing of 8nm

8/16/06

13

Cancer Diagnosis Bio-Assay Nano Cantilever ArrayResearcher: Kevin Klein, Jiantao Zheng, Suresh Sitaraman

Georgia Tech Mechanical Engineering

• nanocantilevers can be individually coated with specific reagents to detect and measure the presence of particular antigens and/or complementary DNA sequences with a smaller sample size and at much earlier stages of disease progression compared to current medical diagnostic technologies

• high-throughput detection of proteins, DNA, and RNA for a broad range of applications ranging from disease diagnosis to biological weapons detection

20nmcantilevers

8/16/06

14

Ultra Low K Damascene Process Extended Air GapsResearcher: Seongho Park, Paul Kohl

Georgia Tech Chemical & Biomolecular Engineering

RIE etching of SiO2, PR is etch mask.

resist stripping and spin coating of S/P

deposition of CMP stop layer and resist patterning (e-beam lithography)

Spin-coated S/P

PECVD SiO2

RIE etching of CMP stop layer

resist pattern

CMP stop layer

resist patternPECVD SiO2

Si-wafer

Stripping e-beam resist and RIE for S/P

resist pattern

PECVD SiO2

Si-wafer

Spin-coated S/P

PECVD SiO2

Si-wafer

Spin-coated S/P

PECVD SiO2

resist patternCMP stop layer

Si-wafer

Si-wafer

Deposition of metal barrier layer

Spin-coated S/P

PECVD SiO2

Si-wafer

CMP stop layerDeposition of Cu seed layer

Electroplating of Cu or CVD Cu

Wet etching of Cu

Deposition of the interlevel dielectric

Decomposition of S/P

CMP

metal barrier layer

Spin-coated S/P

PECVD SiO2

Si-wafer

metal barrier layerCu layer

Spin-coated S/P

PECVD SiO2

Si-wafer

Intralevel Cu

PECVD SiO2

Interlevel

Si-wafer

Spin-coated S/P

PECVD SiO2

Si-wafer

CMP stop layer

Spin-coated S/P

PECVD SiO2

Si-wafer

CMP stop layer

Spin-coated S/P

PECVD SiO2

Interlevel

Si-wafer

8/16/06

15

Advanced Copper Interconnection and Low-k DielectricResearcher: *Dean Denning, **Devin Brown

*SEMATECH, **Georgia Tech

Research on advanced copper interconnects and low-k dielectric material is being carried out at Georgia Tech, with interconnect line widths down to 30 nm to address needs and challenges presented by the International Technology Roadmap for Semiconductors (ITRS). SEMATECH members include Infineon, AMD, Intel, HP, IBM, Samsung, TI and Freescale.

30 nm lines

8/16/06

16

Carbon Nanotube Pattern ControlResearcher: Devin Brown, Azad Naeemi

Georgia Tech Microelectronics Research Center

Research is being conducted to study the effects of electric field during carbon nanotube growth. The image above shows 100nm diameter Iron catalyst islands aligned to less than 20nm on top of 100nm Molybdenum electrode lines.

< 20nm pattern alignment !

8/16/06

17

Single Molecule DetectionGraduate Student: Chris Tabor, PI: Mostafa A. El-Sayed

School of Chemistry, Georgia Tech

Hazardous substances such as Cyanide and Anthrax could be confidently and efficiently detected below the infectious concentration. As the particle separation increases the detection limit increases exponentially. It is thus imperative that the particle gaps be on the order of a few nanometers and is why EBL is so important to the fabrication technique.

7nm gap

LASER

Raman “Fingerprint”

Detector

8/16/06

18

Graphite NanotransistorGraduate Student: Zhiming Song, PI: Walt De Heer

School of Physics, Georgia Tech

20nm

Nanowire is formed in a thin graphite layer to produce a transistor similar to carbon nanotube.

8/16/06

19

Silicon Photonic CrystalsGraduate Student: Tsuyoshi Yamashita, PI: Chris Summers

Materials Science & Engineering, Georgia Tech

Photonic crystal devices provide researchers with numerous properties unavailable in conventional optical materials such as the negative index of refraction effect.

8/16/06

20

Best result to date (2/16/05):

6.5nm line

Narrow Isolated Line ResolutionDevin K. Brown, Raghunath Murali

Microelectronics Research Center, Georgia Tech

Isolated line in negative HSQ e-beam resist.

8/16/06

21

Narrow Dense Lines Resolution Raghunath Murali, Devin K. Brown

Microelectronics Research Center, Georgia Tech

Dense lines in positive ZEP520 e-beam resist.

8/16/06

22

Au

SiO2

30 nm

300 nm

SiO2

Au40 nm

Electroluminescence of Gold NanoparticlesGraduate Student: Wonsang Au, PI: Robert M. Dickson

School of Chemistry and Biochemistry, Georgia Tech

Exhibiting characteristic single-molecule behavior, these individual room-temperature molecules exhibit extreme electroluminescence enhancements (>104 vs. bulk and dc excitation on a per molecule basis) when excited with specific ac frequencies.

8/16/06

23

13nm

Georgia Research AllianceGraduate Student: George P. Burdell

School of Engineering, Georgia Tech

13nm line width lettering in negative HSQ EBL resist.

8/16/06

24

26nm feature

Georgia Tech Buzz MascotGraduate Student: George P. Burdell

School of Engineering, Georgia Tech

26nm features in positive ZEP520 EBL resist.

8/16/06

25

JEOL JBX-9300FSElectron Beam Lithography System

http://nanolithography.gatech.edu