7.13301400 memsstar semicon taiwan 2011

8/3/2019 7.13301400 MEMSstar Semicon Taiwan 2011

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Surface Treatment and Release

Semicon Taiwan 2011




memsstar• Supplies vapour phase processing equipment to the

global MEMS industry• Focussed on ‘integration’ of release scheme into

MEMS process flowconsult on material choices and alternative depositionprocesses

• Only company dedicated to all ‘release’ etchschemes with proprietary technology and equipment

XeF2

Vapour HFOrganic Release

• Integration of anti-stiction Coatings with ‘release’ etch




memsstar Offers:

• Unique patented processing solutions for vapour phase isotropicetch and surface modification

• Wide range of MEMS deposition and etching products includingsingle-wafer fabrication equipment

• Comprehensive portfolio of etch and surface modification process

recipes for MEMS manufacturing using semiconductor equipment tomaximize ROI and extend the usability of existing systems

• Strong semiconductor and MEMS process expertise that eases thepath to integrating next-generation release schemes into productiveand reliable process flows

• MEMS etch and coating processes that eliminate the problemsassociated with alternative approaches, including incompatible andpoorly controlled wet chemistries, poor control and monitoring ofstagnant gas systems, and multiplicity of unit process steps




memsstar® Sacrificial Etch ProcessingKey technology benefits – focus on performance

• Single wafer processing• Excellent within wafer uniformity

• Excellent wafer to wafer uniformity

• Stiction free processing

• High yield

• Industry leading etch rates

• Large process window

• Optimisation of process for any given structure

• Industry leading selectivities to most common materials in

MEMS• Integrated process with anti stiction coating

• CMOS compatible processes

• Compatible with wide range of materials including metals




Continuous Vapour Flow Processing

Replaces ‘pulse’ technique

• higher etch rates

• higher selectivities

• excellent within wafer uniformity

• excellent wafer to wafer repeatability• precise process control

Allows use of process monitoring and endpointtechniques

• Greater productivity




Etch Process Modules - SVR-vHFSacrificial Vapour Release

Oxides - Undoped, Thermal, PECVD, LPCVD

• Alcohol free process

• Single wafer, vapour phase processing

• Excellent within wafer uniformity < 5%

• Excellent repeatability <5% wafer to wafer


• High selectivity to underlayer and mechanical materials

• especially nitride

• Large process window to optimise process for any structure• No corrosion

• No stiction

• In Line Controls – endpoint

Etch Chemistry - aHF




vHF Process Performance

0

2

4

6

8

10

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Uniformity %

U %

0

1000

2000

3000

4000

5000

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Etch Rate Å/min25 wafer run – 200mmBlanket thermal oxidewafers




Etch Process Modules - SVR-XeSacrificial Vapour Release

Silicon - Poly, Amorphous, Single Crystal

Transition Metals - Molybdenum, Tantalum, Tungsten ……

• Single wafer, vapour phase processing

• Excellent within wafer uniformity < 5%• Excellent repeatability <5% wafer to wafer


• High selectivity to nitride and oxide

• Large process window to optimise process for any structure

• No stiction• In Line Controls – etch rate monitor, endpoint, temperature, optical

Etch Chemistry - XeF2




XeF2 Process Performance

Process Repeatability

– Release etching withmemsstar®

– Wafer to wafer repeatability<2%

etch rate

0.00

0.20

0.40

0.60

0.80

1.00

1 2 3 4 5 10 15 20 25

wafer

etch rate

Single Crystal Etch Rate

0.60

0.80

1.00

1.20

1.40

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

over 3 months

E / R ( u m / m i n )

CCFT™ is very reproducible

– 3 months data, 40%open area into singlecrystal




Process Controls - Endpoint

Thermal Endpoint for XeF2

etch of differing structures

25.00

25.50

26.00

26.50

27.00

27.50

28.00

28.50

29.00

29.50

0 50 100 150 200

micromirror

cantilever

membrane

HF Etch

-0.10

0.00

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0 20 40 60 80 100 120 140 160

Time(s)

S i g n a l

Spectroscopic Endpoint for vHF etch

Multiple endpointing techniques available dependent on

structure and etch

• minimise overetch• monitor process efficiency• improve productivity




Screen Capture




Ideal for

• Endpoint detection.

• Production process control, SPC.

• Multi process steps with different materials.

• Enhance development, better understanding of processmechanisms.

• Reducing development costs, number of experimentalruns.




Coating Process Modules - SPD™ Surface Preparation and Deposition - Coatings

• Precursor chemistry process with CCFT™ - fast process times• Ultra thin and conformal, robust and cost effective

• Integrated plasma chemistries

Standard Coatings Available•SPD™ Hydrophobic – non stick, fluid transport

•SPD™ Hydrophilic – wetting layers

•SPD™ Bio Compatible – in vivo applications

•SPD™ Bio Active – receptor applications




Examples

Released Micro BolometerXeF2 etch

Released Motion SensorvHF etch




Why memsstar?- memsstar is the only company specialized in release

processing and integration for MEMS manufacturing

- Technology-focused company- 7 patent applications on release processing and process monitoring

- 1 patent granted on process monitoring

-2 patents granted of process method

- Next-generation technology

- Wealth of processing experience in etch anddeposition-

Over 100 man years experience in processing alone- Wealth of experience on hardware and service

- Over 400 man years with companies such as AMAT/Lam/Novellus

- 100% sign off record to date




Summary

Replace “wet chemical processing” Higher Yield

Zero Stiction

Single wafer processing Higher YieldPrecise process controlUnrivalled repeatability

Continuous Flow Processing Precise process controlProcess Monitoring Techniques

Integrate processes on single cluster Reduce WIPHigher Yield

Integrate processes into CMOS fab Reduce CapexHigher Utilisation

Develop new controls New technologyLower COO




Thanks for your time

Any questions?



Deep Silicon Etch™

System and Technology

VERSALINE™

Modular systems with leading technology

and configuration flexibility



2

Plasma-ThermEnabling Sustainable Success

Manufacturer of semiconductorprocessing equipment serving

global specialty marketsCompany focus

High performance wafer fabricationsystems

Technology leadership in specialtysemiconductor markets

Customer recognized awardwinning service for 12 consecutiveyears



Adv.Photomask

& Imprint

Adv.Photomask

& Imprint

Data

Storage

Data

Storage

R&DR&D SolarSolar PowerPower WirelessWireless PhotonicsPhotonics SSLSSL MEMSMEMS

Plasma-Therm Etch Solutions

M a t e

r i a l s

P l a t f o

r m s



DSE Application Examples

A few MEMS examples:

Microfludic channels

Bio & chemical reactionchambers

Interconnect vias

Interdigital resonators

Power device isolationtrenches

Micro capacitors….



5

Wide Range of Market Requirements

Wafer sizes 4”, 6” and 8”

High Throughput Etch

ICP – higher etching rateSubstrate Temp. Control

ESC

Mechanical

Carriers for fragile substratesHigh productivity

Low maintenance

Temp. control source

Materials

Si / SOI

ProfilesSloped

Vertical

High aspect ratio

ARDELoading (high/low)

Depth

Shallow 1 -2µm

Deep >500µmEach product uses a specific process⇒⇒⇒⇒ development intensiveSuccess when we work closely withcustomers



7

DSE – Etch/Deposition Cycling

Passivation (C4F8)

Selective passivation removal

Isotropic etching of Si (SF6)Scallop Length

Scallop Depth

Metrics● Etching rate●

Sidewall smoothness● Mask undercut● SOI – Notch● ARDE● Selectivity

Time Division Multiplexing (TDM) process(also known as “Bosch process”)

Process control with threesteps



8

0.2

0.5

1

2

5

For example

DSE Profile Control with Morphing

Smooth and automatic parameter changes duringprocessing

User’s selectable morphing curvesEnhanced capability for special applications

P a r a m e t e r

Process Time

Parameter Start End Curve

Electrode Bias 400 500 0.2

Dep time (sec) 2.0 1.5 0.5

Time

Without Morphing With Morphing

Profile DrivenTo Vertical



9

DSE Smooth Sidewalls with Fast Switching

Control

<10 nmroughness

at 6.4µm/min

High etch rate with low roughness

with sub-second switching

Process Module

C 4 F 8

S F 6

M F C

M F C E

x h a u s t

E x h a u s t

Fast

Gas Delivery

Close coupled

Rapid Response

Smart Pressure ControlSolid StateMatching



10

SOI Technology with Patented Plasma-Therm

Process Notch Control

SOI structure withtypical “notching”and undercut

problems

Plasma-ThermDSE™ SOI Solution

Typical DeepSilicon Etching

Notchless



DSE – Sensitive Endpoint Detection for

SOI Applications

ApplyingSignal Processing

Raw Endpoint SignalMonitorPlasma Emission

Profiles - Smoothand Vertical

No Undercut atSi/SiO2 Interfaces

<1% open oxide on150mm wafer



12

Optimization for Sidewall Smoothness

Very High Aspect Ratio Trench

Feature Width: ~3 um

Etched Depth: ~182 umEtching Rate : 3.5 um/minAspect Ratio: ~60Sidewall Smoothness: <50 nm

150 mm wafer, ≤ ±3.5% uniformity

Feature Width: ~0.8 umEtched Depth: ~32 umEtching Rate : ~2 um/minAspect Ratio: ~40Sidewall Smoothness: <50 nm150 mm wafer, ≤ ±3.5% uniformity



13

DSE Process Requirements

Met with Plasma-Therm Technology Feature profile control

Critical dimension adjustment

Smooth sidewalls with fast processcontrol technology

Superior SOI notch performance

Wide process latitudeHigh selectivity

High productivity – low maintenance,high throughput

Stable process performance – temperature controlled environment

Sensitive endpoint technology



14

DSE Development Benchmark

~20% Open Area

20092010

2011

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

0 10 20 30 40 50

E t c h R a t e ( µ m / m i n )

Aspect Ratio

PTI - CurrentPerformance



Versaline Configuration Flexibility

From R&D to Large Volume Production

15

VCx-600H – Thru wall

VCx-400 – Thru wall



Thank you

7.13301400 memsstar semicon taiwan 2011

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