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2003 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.3

Features

Precision Fixed Operating Frequency (70kHz)

Low Start-up Current(Typ. 100uA)

Pulse by Pulse Current Limiting

Over Load Protection

Over Current Protection

Over Voltage Protection (Min. 25V)

Internal Thermal Shutdown Function

Under Voltage Lockout Internal High Voltage Sense FET

Latch Mode

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of

high voltage power SenseFET and current mode PWM IC.

Included PWM controller features integrated fixed

frequency oscillator, under voltage lock-out, leading edge

blanking, optimized gate turn-on/turn-off driver, thermal

shutdown protection, over voltage protection, andtemperature compensated precision current sources for

loop compensation and fault protection circuitry. compared

to discrete MOSFET and PWM controller or RCC solution, a

Fairchild Power Switch(FPS) can reduce total component

count, design size, weight and at the same time increase

efficiency, productivity, and system reliability. It has a basic

platform well suited for cost effective design in either a

flyback converter or a forward converter.

TO-3P-5L

1. DRAIN 2. GND 3. VCC 4. FB 5. S/S

1

Internal Block Diagram

VO F F S E T

Sense

FET

15V/9V

UVLO

Vref

2.5R

5uA

R

1mA

Good Logic

INTERNALBIAS

LEB++++

-

S

R

Q

OSC

CLK

7.5V

ShutdownLatch

Power-on Reset/Auto-restart

Rsense

LEB : Leading Edge Blanking OCL : Over Current L im it

Vcc

GND

Drain

++++

-

14V

27V

++++

-

OVP-out

OVP

S

RQ

3

2

1

VCC VREF

VOLTAGELIMIT

CIRCUIT

OLP

OCL(VS=1.4V)

TSD(TJ=150)

OVP-out(VCC=27V)

VS

5V

Soft Start 5

Feedback 4

KA5M0965QFairchild Power Switch(FPS)

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Absolute Maximum Ratings

Note:

1. Tj = 25C to 150C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 20mH, VDD = 50V, RG = 27, starting Tj = 25C

Characteristic Symbol Value Unit

Drain-Gate Voltage (RGS=1M) VDGR 650 V

Gate-Source (GND) Voltage VGS 30 V

Drain Current Pulsed (2) IDM 36.0 ADC

Single Pulsed Avalanche Energy (3) EAS 950 mJ

Continuous Drain Current (TC=25C) ID 9.0 ADC

Continuous Drain Current (TC=100C) ID 5.8 ADC

Maximum Supply Voltage VCC,MAX 30 V

Input Voltage Range VFB -0.3 to VSD V

Total Power DissipationPD (watt H/S) 170 W

Darting 1.33 W/C

Operating Ambient Temperature TA -25 to +85 C

Storage Temperature TSTG -55 to +150 C

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Electrical Characteristics (SFET Part)

(Ta =25C unless otherwise specified)

Note:

1. Pulse test: Pulse width 300S, duty 2%

2.

Characteristic Symbol Test condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V

Zero Gate Voltage Drain Current IDSS

VDS=Max., Rating,

VGS=0V- - 50 A

VDS=0.8Max., Rating,

VGS=0V, TC=125C- - 200 mA

Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 W

Forward Transconductance (Note) gfs VDS=50V, ID=4.5A 5.0 - - S

Input Capacitance CissVGS=0V, VDS=25V,

f=1MHz

- 1200 -

pFOutput Capacitance Coss - 135 -

Reverse Transfer Capacitance Crss - 25 -

Turn on Delay Time td(on) VDD=0.5BVDSS, ID=9.0A

(MOSFET switchingtime are essentially

independent of

operating temperature)

- 25 60

nSRise Time tr - 75 160Turn Off Delay Time td(off) - 130 270

Fall Time tf - 70 150

Total Gate Charge

(Gate-Source+Gate-Drain)Qg

VGS=10V, ID=9.0A,

VDS=0.8BVDSS

- 45 60

nCGate-Source Charge Qgs - 8 -

Gate-Drain (Miller) Charge Qgd - 22 -

S1

R----=

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Electrical Characteristics (Control Part) (Continued)

(Ta = 25C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

3. These parameters are indicated Inductor current.

Characteristic Symbol Test condition Min. Typ. Max. Unit

UVLO SECTION

Start Threshold Voltage VSTART - 14 15 16 V

Stop Threshold Voltage VSTOP After turn on 8.4 9 9.6 V

OSCILLATOR SECTION

Initial Accuracy FOSC Ta=25C 61 67 73 kHz

Frequency Change With Temperature (2) - -25C Ta +85C - 5 10 %

Maximum Duty Cycle Dmax - 74 77 80 %

FEEDBACK SECTION

Feedback Source Current IFB Ta=25C, 0V Vfb 3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage VSD Vfb 6.5V 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25C, 5V Vfb VSD 4 5 6 A

SOFT START SECTIONSoft Start Voltage VSS VFB = 2V 4.7 5.0 5.3 V

Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit IOVER Max. inductor current 5.28 6.00 6.72 A

PROTECTION SECTION

Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - C

Over Voltage Protection Voltage VOVP VCC 24V 25 27 29 V

TOTAL DEVICE SECTION

Start-up Current ISTART VCC=14V - 0.1 0.17 mA

Operating Supply Current (Control Part Only) IOP VCC 28 - 7 12 mA

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Typical Performance Characteristics

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

10-1

100

101

10-1

100

101

Note :

1. 250s Pulse Test

2. TC

= 25

VGS

Top : 15 V10 V

8.0 V

7.5 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

2 4 6 8 1010

-1

100

101

Note

1. VDS

= 50V

2. 250s Pulse Test

-55

150

25

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]

0 2 4 6 8 10 12 14 160.8

0.9

1.0

1.1

1.2

1.3

VGS

= 20V

VGS

= 10V

RDS(on),[]

Drain-SourceOn-Resistance

ID

, Drain Current [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.610-1

100

101

25150 Note :1. V

GS= 0V

2. 250s Pulse Test

IDR

,ReverseDrainCurrent[A]

VSD

, Source-Drain Voltage [V]

10-1

100

101

0

500

1000

1500

2000

2500

3000C

iss= C

gs+ C

gd(C

ds= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

Note ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acitances[pF]

VDS


0 5 10 15 20 25 30 35 40 450

2

4

6

8

10

12

VDS

= 300V

VDS

= 120V

VDS

= 480V

Note : ID

= 8.5 A

VGS,Gate-SourceVoltage[V]

QG, Total Gate Charge [nC]

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature

Figure 11. Thermal Response

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Note :

1. VGS

= 0 V

2. ID

= 250 A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Note :

1. VGS

= 10 V

2. ID

= 6.0 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

100

101

102

103

10-1

100

101

102

10 s

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by RDS(on)

Notes :

1. TC

= 25oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS


25 50 75 100 125 1500

2

4

6

8

10

ID,DrainCurrent[A]

TC, Case Temperature [ ]

1 0-5

1 0-4

1 0-3

1 0-2

1 0-1

1 00

1 01

1 0-2

1 0-1

1 00

N o t e s :

1 . Z JC

( t) = 0 . 7 5 / W M a x .

2 . D u t y F a c t o r , D = t1/t

2

3 . TJM

- TC

= PD M

* Z JC

(t )

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

Z

JC(t),The

rmalResponse

t1, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]

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Typical Performance Characteristics (Control part) (Continued)

(These characteristic graphs are normalized at Ta = 25C)

Fig.1 Operating Frequency

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fosc

Fig.2 Feedback Source Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

Iover

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Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shutdown Feedback Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

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Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

Fig.13 Soft Start Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain Source Turn-on

Resistance

0

0.5

1

1.5

2

2.5

-25 0 25 50 75 100 125 150

Rdson

( )

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Package Dimensions

TO-3P-5L

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Package Dimensions (Continued)

TO-3P-5L (Forming)

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8/25/03 0.0m 001Stock#DSxxxxxxxx

2003 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICESOR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTORCORPORATION. As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure toperform when properly used in accordance withinstructions for use provided in the labeling, can bereasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHERDOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type

YDTU : Forming Type

Product Number Package Rating Operating Temperature

KA5M0965QTU TO-3P-5L650V, 9A -25C to +85C

KA5M0965QYDTU TO-3P-5L(Forming)

5m0965qtu

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