54ac541 radiation report - stmicroelectronics
TRANSCRIPT
August 2013 DocID024527 Rev 1 1/42
TN1003Technical note
54AC541 radiation report
Introduction
This technical note provides details of the total ionizing dose (TID) and the single event effects (SEE) that cover the QML-V qualification of the 54AC541 device. It includes:
• TID results up to 300 krad (Si)
• SEE results:
– showing single event latchup (SEL) immunity up to 120 MeV-cm2/mg effective linear energy transfer (effective LET).
– including single event transient (SET) and single event upset (SEU) characterizations.
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Contents TN1003
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Contents
1 Total ionizing dose (TID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Single event effects (SEE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Test strategy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2.1 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2.2 Facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2.3 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3 Test results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.1 SEL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.2 SET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3.3 SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3 Glossary of terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Appendix A General test setup (UCL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Appendix B SEL test method (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Appendix C SEL test principle (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Appendix D SET test method (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Appendix E SET test principle (UCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Appendix F SET block diagram (TAMU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Appendix G SEU test method (TAMU). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device . . . . . . . . . 25
Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device . . . . . . . . 25
Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device . . . . . . . . . . 26
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Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device . . . . . . . . . . 27
Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device . . . . . . . 28
Appendix M Summary of SET runs 1 to 15 for the 54AC14 device . . . . . . . . . . 29
Appendix N Summary of SET runs 1 to 6 for the 54AC244 device . . . . . . . . . . 30
Appendix O Summary of SET runs 1 to 7 for the 54AC374 device . . . . . . . . . . 31
Appendix P SET test results for the 54AC164245 (UCL). . . . . . . . . . . . . . . . . . . 32
Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device . . . . . . 34
Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device . . . . . . . 38
Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device . . . . . . . . . . 40
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
List of tables TN1003
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List of tables
Table 1. TID test parameters and conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Table 2. TID results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7Table 3. Facilities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 4. Ions used in TAMU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Table 5. Ions used in UCL (cocktail number 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 6. Ions used in UCL (cocktail number 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 7. 54AC14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 8. 54AC174. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 9. 54AC244. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 10. 54AC374. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 11. 54AC164245. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 12. SEL results for four ACMOS devices tested with two heavy ions. . . . . . . . . . . . . . . . . . . . 12Table 13. SET results for four ACMOS devices tested with four heavy ions . . . . . . . . . . . . . . . . . . . 13Table 14. Worst SET for the 54AC244 device, S/N = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 15. Worst SET for the 54AC374 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 16. Worst SET for the 54AC164245 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 17. SEU results for two ACMOS devices tested with four heavy ions . . . . . . . . . . . . . . . . . . . 16Table 18. Worst SEU for the 54AC174 device, S/N = 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17Table 19. Worst SEU for the 54AC374 device, S/N = 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17Table 20. Test apparatus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Table 22. Summary of SEL runs 76 to 80 for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . . 25Table 23. Summary of SEL runs 1 to 6 for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Table 24. Summary of SEL runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Table 25. Summary of SEL runs 1 to 8 for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . . 28Table 26. Summary of SET runs 1 to 15 for the 54AC14 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Table 27. Summary of SET runs 1 to 6 for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Table 28. Summary of SET runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . 34Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . 38Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40Table 32. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
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TN1003 List of figures
List of figures
Figure 1. 54AC14. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Figure 2. 54AC174. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 3. 54AC244. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 4. 54AC374. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 5. 54AC164245. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 6. SET Weibull cross section for the 54AC244 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Figure 7. SET Weibull cross section for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Figure 8. SET Weibull cross section for the 54AC164245 device . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Figure 9. SEU Weibull cross section for the 54AC174 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Figure 10. SEU Weibull cross section for the 54AC374 device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17Figure 11. Test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 12. Common SEL characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 13. Shape of OUT* and OUT/ signals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 14. SET block diagram (TAMU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 15. Worst case on run 58, 132Xe26, tilt @ 0°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Figure 16. Worst case on run 41, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Figure 17. Worst case on run 34, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33Figure 18. Worst case on run 16, 132Xe26, tilt @ 52°. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Total ionizing dose (TID) TN1003
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1 Total ionizing dose (TID)
TID test parameters, conditions, and results for the 54AC541 device are presented below. 54AC541 is a rad-hard octal bus buffer 3-state. It was qualified up to 300 krad (Si).
Table 1. TID test parameters and conditions
Test parameter Test condition
Test method MIL-STD-883 TM1019
Applied spec SMD 5962-88706
Test facility CEA, Saclay, France
Source Pagure
Total dose 300 krad
Dose rate 60 rad(Si)/s
Bias voltage 5.5 V
Bias conditions Inputs at high level
Limits
Before irradiation
ICC ≤ 4 μA
IOZL ≥ -5 μA
IOZH ≤ 5 μA
After room temperature annealing
ICC ≤ 50 μA
IOZL ≥ -5 μA
IOZH ≤ 5 μA
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Table 2. TID results
S/N
Test results at 0 krad Test results at 300 krad After room temperature annealing
Functional test passed?
ICC value (μA)
IOZL value (μA)
IOZH value (μA)
Functional test passed?
ICC value (μA)
IOZL value (μA)
IOZH value (μA)
Functional test passed?
ICC value (μA)
IOZL value (μA)
IOZH value (μA)
1
Yes 0.010 0 0 Yes
485.6
-0.050
21.7
Yes
13.4
0
0.410
2 544.0 25.3 18.3 0.580
3 552.3 25.8 17.7 0.600
4 511.5 -0.040 23.8 13.8 0.450
5 564.5 -0.050 26.2 20.3 0.700
Ref(1)
1. Ref = reference part
0.010 0 0 0.020 0
Single event effects (SEE) TN1003
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2 Single event effects (SEE)
2.1 Test strategy
The ACMOS logic series was characterized under heavy ions through five test vehicles: 54AC14, 54AC174, 54AC244, 54AC374, and 54AC164245. These test vehicles were chosen because they are representative of the technology.
2.2 Test conditions
2.2.1 Reference documents
Please refer to the following Online test procedures:
• JESD57
• ASTM F 1192
2.2.2 Facilities
The devices were tested at two facilities (see Table 3).
Table 4, Table 5, and Table 6 show the heavy ions used in each facility and their respective energy, range and linear energy transfer (LET).
Table 3. Facilities
Texas A&M cyclotron facility (TAMU), Texas, USA
Universite Catholique de Louvain (UCL), Louvain-La-Neuve, Belgium
Devices tested
54AC14, 54AC174 54AC244, 54AC374, 54AC164245
Table 4. Ions used in TAMU
Ions Energy (MeV) Range (μm(si)) LET (MeV-cm2/mg)
40 Ar 18 599 220 7.7
84 Kr 36 1259 149 25.4
129 Xe 54 1934 124 47.3
165 Ho 67 2474 112 64.3
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TN1003 Single event effects (SEE)
For further information, please refer to Appendix A, Appendix B, Appendix C, Appendix D, Appendix E, Appendix F, and Appendix G. Data are presented by facility and then by “event effects”.
2.2.3 Device information
Figure 1. 54AC14
Table 5. Ions used in UCL (cocktail number 1(1))
1. See Appendix B: SEL test method (UCL)
Ions Energy (MeV) Range (μm(si)) LET (MeV-cm2/mg)
132 Xe 26 459 43 55.9
Table 6. Ions used in UCL (cocktail number 2(1))
1. See Appendix D: SET test method (UCL)
Ions Energy (MeV) Range (μm(si)) LET (MeV-cm2/mg)
58 Ni 18 567 98 20.6
83 Kr 25 756 92 32.4
Table 7. 54AC14
Standard microcircuit
drawing (SMD)
Function Samples used Date code Date test Wafer fab
5962-87624Rad-hard
hex Schmitt inverter
5 for SEL5 for SET
0605A 20-Jul-2007 Agrate
Die marking Die layout Flat package 14
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Figure 2. 54AC174
Figure 3. 54AC244
Table 8. 54AC174
Standard microcircuit
drawing (SMD)
Function Samples used Date code Date test Wafer fab
5962-87626Rad-hard
hex D-type flip flop with clear
5 for SEL5 for SEU
0432A 20-Jul-2007 Agrate
Table 9. 54AC244
Standard microcircuit
drawing (SMD)
Function Samples used Date code Date test Wafer fab
5962-87552
Rad-hard octal bus buffer
line driver 3-state
1 for SEL1 for SET
N/A 03-Nov-2008Agrate,
Carrollton
Die marking Die layout Flat package 16
Die marking Die layout Flat package 20
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TN1003 Single event effects (SEE)
Figure 4. 54AC374
Figure 5. 54AC164245
Table 10. 54AC374
Standard microcircuit
drawing (SMD)
Function Samples used Date code Date test Wafer fab
5962-87694Rad-hard
octal D-type flip flop 3-state
2 for SET2 for SEU
N/A 03-Nov-2008Agrate,
Carrollton
Table 11. 54AC164245
Standard microcircuit
drawing (SMD)
Function Samples used Date code Date test Wafer fab
5962-98580
Rad-hard 16-bit
transceivor 3.3 V to 5.5 V bidirectional level shifter
4 for SEL4 for SET
N/A 26-Apr-2010 Ang Mo Kio
Die marking Die layout Flat package 20
Die marking Die layout Flat package 48
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2.3 Test results
2.3.1 SEL
Table 12 presents the SEL results for four ACMOS devices (54AC14, 54AC174, 54AC244, and 54AC164245) tested with two heavy ions (Ho and Xe).
No SEL was detected for any of the devices. These devices were SEL immune up to 120 MeV-cm2/mg. For further details, refer to Appendix H, Appendix I, Appendix J, Appendix K, and Appendix L.
2.3.2 SET
Table 13 presents the SET results for four ACMOS devices (54AC14, 54AC244, 54AC374, and 54AC164245) tested with four heavy ions (Ar, Kr, Xe, and Ni). The threshold voltage was ± 50 mV and the sampling rate was 1 G/s. Some SET test results were recorded despite being very short (approximately 100 ns).
Table 12. SEL results for four ACMOS devices tested with two heavy ions
Device 54AC14 54AC174 54AC244 54AC164245
Ion Ho Xe
Fluence(ions/cm2)
≤ 1 x 107 ≤ 1 x 106
LET max.(MeV-cm2/mg)
71 56 68
Effective LET max.(MeV-cm2/mg)
120 112 110
Temperature(°C)
125
Supply voltage VCC = VCC max = 6 V
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TN1003 Single event effects (SEE)
No SET was detected for the 54AC14 device.
Figure 6, Figure 7, and Figure 8 below show the SET cross section curves for the 54AC244, 54AC374, and 54AC164245 devices. The curves below were parametrized using the Weibull fit. The worst amplitude was 150 mV.
Figure 6. SET Weibull cross section for the 54AC244 device
Table 13. SET results for four ACMOS devices tested with four heavy ions
Device 54AC14 54AC244 54AC374 54AC164245
Ion Ar, Kr Xe Xe, Kr, Ar Xe, Kr, Ni
Fluence(ions/cm2)
≤ 1 x 108 ≤ 1 x 107
LET max.(MeV-cm2/mg)
41 56 68
Effective LET max.(MeV-cm2/mg)
83 112 110
Saturated cross section
- 7.00E-07 7.30E-05
Threshold LET - 55.9 21.3
Temperature(°C)
25
Supply voltage VCC = VCC max = 2 to 5.5 V
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Figure 7. SET Weibull cross section for the 54AC374 device
Figure 8. SET Weibull cross section for the 54AC164245 device
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TN1003 Single event effects (SEE)
Table 14, Table 15, and Table 16 below present the worst SET for the 54AC244, 54AC374, and 54AC164245 devices.
For further information, please refer to Appendix M, Appendix N, Appendix O, Appendix P, and Appendix Q.
Table 14. Worst SET for the 54AC244 device, S/N = 1
Run IonLET
(MeV-cm2/mg)Effective LET(MeV-cm2/mg)
Fluence(ions/cm2)
Number of events
Cross section
W S
2Xe 55.9 111.8 1.00E+07
7 7.00E-0755 4
5 3 3.00E-07
Table 15. Worst SET for the 54AC374 device, S/N = 2
Run IonLET
(MeV-cm2/mg)Effective LET(MeV-cm2/mg)
Fluence(ions/cm2)
Number of events
Cross section
W S
2Xe 55.9 111.8 1.00E+07
7 7.00E-0755 4
3 3 3.00E-07
Table 16. Worst SET for the 54AC164245 device, S/N = 2
Run IonLET
(MeV-cm2/mg)Effective LET(MeV-cm2/mg)
Fluence(ions/cm2)
Number of events
Cross section
W S
25Xe 67.7
109.96
1.00E+06
73 7.30E-05
63 554 67.7 41 4.10E-05
73 Kr 31 31 12 1.20E-05
83 Ni 21.3 21.3 1 1.00E-06
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2.3.3 SEU
Table 17 presents the SEU results for two ACMOS devices (54AC174 and 54AC374) tested with four heavy ions (Ho, Xe, Kr, and Ar).
Figure 9, and Figure 10 below show the SEU Weibull cross section curves for the 54AC174 and 54AC374 devices.
Figure 9. SEU Weibull cross section for the 54AC174 device
Table 17. SEU results for two ACMOS devices tested with four heavy ions
Device 54AC174 54AC374
Ion Xe, Kr, Ar, Ho Xe, Kr, Ar
Fluence(ions/cm2)
≤ 1 x 108 ≤ 1 x 107
LET max.(MeV-cm2/mg)
71 56
Effective LET max.(MeV-cm2/mg)
120 112
Saturated cross section 8.70E-07 2.94E-06
Threshold LET 8.5 10.1
Temperature(°C)
25
Supply voltage VCC = VCC max = 2
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TN1003 Single event effects (SEE)
Figure 10. SEU Weibull cross section for the 54AC374 device
Table 18 and Table 19 present the worst SEU for the 54AC174 and 54AC374 devices.
For further information, please refer to Appendix R and Appendix S.
Table 18. Worst SEU for the 54AC174 device, S/N = 5
Run IonLET
(MeV-cm2/mg)Effective LET(MeV-cm2/mg)
Fluence(ions/cm2)
Number of events
Cross section
W S
81
Ho 70.2
102.5 9.99E+06 139 8.70E-07
65 6
83 99.81.00E+07
136 8.50E-07
82 70.2 79 4.94E-07
102
Ar 8.5
33.3 2.69E+07 41 8.66E-08
103 28.5 1.94E+07 21 6.77E-08
104 25.8 5.66E+07 3 3.31E-09
101 24.9 1.02E+08 1 6.13E-10
100 21.0 1.09E+08 2 1.15E-09
Table 19. Worst SEU for the 54AC374 device, S/N = 2
Run IonLET
(MeV-cm2/mg)Effective LET(MeV-cm2/mg)
Fluence(ions/cm2)
Number of events
Cross section
W S
2Xe 55.9
111.8 1.00E+07 235 2.94E-06
60 31 55.9 5.67E+06 50 1.10E-06
4 Kr 32.4 32.41.00E+07
56 7.00E-07
7 Ar 10.1 20.2 7 8.75E-08
Glossary of terms TN1003
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3 Glossary of terms
Cross section: The number of events per unit fluence, expressed in units of cm²/device or cm²/bit. In the event of the device being tilted at an angle θ, the fluence must be corrected by multiplying it by cosine θ.
DUT: Device under test
Effective LET: The equivalent LET obtained by tilting the device under test with respect to the axis beam, hence increasing the path length of the ion and the total energy deposited. Effective LET = Incident LET x 1/cosine θ where θ is the tilt angle of the device. Effective LET may also be used in referring to the actual LET in a sensitive volume after taking into account the energy loss in “dead layers” such as metalization and passivation.
Energy: The energy imparted to the ion by the accelerator. This may be in units of total energy (MeV) or energy per nucleon (MeV/n).
Fluence: The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the dimensions (in cm2/bit). Fluence also includes the flux integrated over time. Units are ions/cm2.
Flux: The number of ions passing through a unit area perpendicular to the beam in one second, expressed in ions/cm²/s.
Ion species: Type of ion being used for irradiation (e.g. oxygen, neon)
Level of interest: A cross section, energy, LET, or fluence having some particular significance for a program or project.
Linear energy transfer (LET): The amount of energy deposited per unit length along the path of the incident ion. It is expressed in units of MeV-cm2/mg which is the energy per unit length divided by the density of the irradiated medium.
Range: The distance traveled, without straggling, in the target material by the specified ion of a given charge state and energy.
Saturated cross section - also known as asymptotic cross section: The cross section for which an increase in LET does not result in an increased number of events.
Serial number (S/N): Unique code and consecutive number assigned to all devices
Single event burnout (SEB): Triggering of the parasitic bipolar structure in a power transistor, accompanied by regenerative feedback, avalanche, and high current condition. A SEB is potentially destructive unless suitably protected.
Single event effect (SEE): Any measurable or observable change in the state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike.
Single event functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction. SEFIs typically occur in complex devices with built-in state/control sections like modern memories (SDRAM, DRAM, NOR-and NAND-Flash) and all types of processors, FPGA, or ASICS. Two main types of SEFIs are distinguished depending on the action required to restore functionality: reset by software or by power cycling. The stored data may or may not be lost.
DocID024527 Rev 1 19/42
TN1003 Glossary of terms
Single event gate rapture or dielectric rupture (SEGR): Destructive rupture of a gate oxide or any dielectric layer by a single ion strike. This leads to gate leakage currents under bias and can be observed in power MOSFETs, linear integrated circuits (with internal capacitors), or as stuck bits in digital devices.
Single event latchup (SEL): A permanent and potentially destructive state of the device under test whereby a parasitic thyristor structure is triggered by an ion strike and creates a low impedance, high current path.
Single event transient (SET): A temporary voltage excursion (voltage spike) at a node in a logic or linear integrated circuit caused by a single energetic particle strike.
Single event upset (SEU) - also known as a soft error: The change of state of a latched logic cell from one to zero or vice-versa. A single event upset is non-destructive and the logic element can be rewritten or reset.
Threshold LET: The lowest LET at which a SEE occurs.
Weibull fit: F(x) = A (1-exp{-[(x-x0)/W]s}), with
X = effective LET in MeV-cm2/mg F(x) = the SEE cross section in cm² A = limiting or plateau cross section x0 = onset parameter, such that F(x) = 0 for x < x0 W = width parameter s = a dimensionless exponential
General test setup (UCL) TN1003
20/42 DocID024527 Rev 1
Appendix A General test setup (UCL)
The test board required the following apparatus (Table 20) and setup (Figure 11) to operate properly.
Figure 11. Test setup
Table 20. Test apparatus
Equipment Function Test conditions
MI-03 Power supply VDD1 and VDD2
ME-44, ME-48 Oscilloscope -
ME-53 Guard systemVDD1: Gamme 3, Ith = 80 mAVDD2: Gamme 3, Ith = 80 mA
1
2CLK1
R1 50
VCC_INV
C9
100 nF
SQR_IN
CLK12
U2
3
4CLK1
NC7SZ04
100 nF
C10
VDD1 VDD2
C11
100 nF
5
7 18 31 42
U1
GN
D V
CC
VC
C1
VC
C2
VC
C3
VC
C4
CLK1CLK1
B1B2B3B4B5B6
B1B2B3B4B5B6
OUTOUT
A1A2A3A4A5A6A7A8
A1A2A3A4A5A6A7A8
54ACS164245
1
2356891112
1314161719202223
2425
2627293032333536
3738404143444647
481-DIR
1-B11-B21-B31-B41-B51-B61-B71-B8
2-B1
2-B32-B42-B52-B62-B72-B8
2-B2
2-DIR
1-G
1-A11-A21-A31-A41-A51-A61-A71-A8
2-A1
2-A32-A42-A52-A62-A72-A8
2-A2
2-G
GN
D
GAMS2501131615CB
100 nF
DocID024527 Rev 1 21/42
TN1003 SEL test method (UCL)
Appendix B SEL test method (UCL)
For SEL test detection, runs up to a fluence of 1.107 ions/cm² for SEL monitoring only were performed. This configuration allowed the latchup sensitivity of the device to be verified with cocktail number 1 (see Table 5: Ions used in UCL (cocktail number 1)). The test stopped when the maximum fluence was reached or when a hundred events were detected.
Appendix C SEL test principle (UCL)
A power supply was applied to the device under test (DUT) through the guard system. To obtain 6 V on the DUT, a voltage of 6.3 V was applied. The threshold current of the guard system was set to 80 mA. When an event occurred, the guard system sent a trigger command to the oscilloscope. The power supply was held ‘on’ for 1 ms and cut ‘off’ for 7 ms. It was then restarted with nominal current consumption.
At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.
Event description
During the test, the guard system controlled the device’s current. If the value exceeded 80 mA, the delatcher was triggered and the event was counted as a SEL.Figure 12 shows a common SEL characteristic.
Figure 12. Common SEL characteristic
1. Legend: Tm = hold time for 1 ms; Tc = cut off time for 7 ms
SET test method (UCL) TN1003
22/42 DocID024527 Rev 1
Appendix D SET test method (UCL)
For SET test detection, runs up to a fluence of 1x106 ions/cm² were performed. Latchup monitoring was also performed during these tests. This configuration allowed the SET and the SEL sensitivity of the device to be verified with cocktail number 2 (see Table 6: Ions used in UCL (cocktail number 2)). The test stopped when the maximum fluence was reached or when four hundred events were detected.
Appendix E SET test principle (UCL)
The guard system was used on the power supply of the component to detect SEL and to prevent the destruction of the DUT. An oscilloscope was connected to OUT*(DUT pin 22) and OUT/(DUT pin 23) to perform the SET test. This oscilloscope was configured to monitor pulse width on the output signals. The shape of the OUT* and OUT/ signals are shown in Figure 13.
Figure 13. Shape of OUT* and OUT/ signals
Pulse width modifications of both signals were detected. When such a modification occurred, it was due to SET. The oscilloscope internal counter was then incremented and the trace was stored.
At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.
DocID024527 Rev 1 23/42
TN1003 SET block diagram (TAMU)
Appendix F SET block diagram (TAMU)
The DUT was irradiated to a maximum total ion fluence of 1x108 ion/cm². During the course of the test, five different serial numbers of the DUT (101, 102, 103, 104, 105) were irradiated with a minimum effective LET of 33.3 MeV-cm²/mg and a maximum effective LET of 82.9 MeV-cm²/mg. Except for the test where serial number 101 was irradiated to 1E8 ions/cm², the tests used a maximum fluence of 1E7 ions/cm². At TAMU, the lids were removed from the DUT to give full exposure to the top surface of the die using the 15 MeV/n beam.
The output was monitored with both a data acquisition system to allow transients from all six outputs (1Y, 2Y, 3Y, 4Y, 5Y and 6Y) to be captured, and a pair of high-resolution oscilloscopes to capture detailed images of the transient behavior on a sub-set of the transients. Output 1Y was monitored with the oscilloscope to capture both positive and negative going transients. The actual trigger setting was recorded in the run logs. The data acquisition system and the oscilloscopes were located in the control room while the power supplies, meters, and switch matrix were located in the exposure room. The outputs were brought to the control room using shielded SMA and BNC cables.
Figure 14. SET block diagram (TAMU)
SEU test method (TAMU) TN1003
24/42 DocID024527 Rev 1
Appendix G SEU test method (TAMU)
The devices under test were irradiated to a maximum total ion fluence of 1x108 ions/cm² at a maximum effective LET of 120 MeV-cm²/mg using the worst-case voltage (3 V) and temperature (25 °C). The lids were removed from the devices prior to testing to give full exposure to the top surface of the die.
To achieve an effective linear energy transfer (LET) of 120 MeV-cm²/mg the devices were irradiated with Ho at an angle of approximately 54 degrees. The effective LET is the normal LET divided by the cosine of the angle of irradiation. The use of effective LET is accepted in test standards. The Ho range to the Bragg peak using a 15 MeV/n beam is 112 μm.
A variety of LETs and angles were used to obtain LET values from 8.5 to 120 MeV-cm²/mg.
Prior to and immediately following the heavy ion exposure, the devices underwent a “health check”. This test verified that the device met the datasheet specifications and did not suffer any degradation that would confound the SEU data.
The test platform also monitored for clear errors (all bits were set to “0”) and clock errors (all bits switched states simultaneously). Note that the inputs were held in the opposite state from the outputs so that if a clock transient occurred, all bits would flip simultaneously.
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Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device
Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device
Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
70 103
6 125 Ho 2474 112 70.80 54 66 120.50
5.24E+04 3251.00E+07
0
71 104 5.17E+04 329
72 105 4.96E+04 173 5.05E+06
73 105 5.15E+04 166 5.04E+06
74 106 4.95E+04 344 1.00E+07
75 107 4.71E+04 361 9.99E+06
Table 22. Summary of SEL runs 76 to 80 for the 54AC174 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
76 1
5.5 125 Ho 2474 112 70.80 54 66 120.50
4.61E+04 3699.99E+06
0
77 2 4.58E+04 372
78 3 4.66E+04 365 1.00E+07
79 4 4.56E+07373
9.99E+06
80 5 4.56E+04 1.00E+07
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Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device
Table 23. Summary of SEL runs 1 to 6 for the 54AC244 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
1
1 6 125 Xe 459 43 55.90
60 22 111.807.88E+03 1271
1.00E+07 0
2 1.06E+04 945
30 43 55.90
1.76E+04 564
4 1.80E+04 556
560 22 111.80
9.04E+03 1108
6 8.74E+03 1147
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Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device
Table 24. Summary of SEL runs 1 to 7 for the 54AC374 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
11
6 125
Xe 459 43 55.90
0 43 55.90 1.04E+04 547 5.67E+06
0
2
21
60 22 111.80
5.35E+03 1871
1.00E+07
2
31
9.79E+03 10222
41
Kr 756 92 32.40 0 92 32.40
1.36E+04 7392
51
1.24E+04 8092
61
Ar 372 119 10.10 60 60 20.20
9.47E+03 10572
71
9.12E+03 10982
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Table 25. Summary of SEL runs 1 to 8 for the 54AC164245 device
Run S/NVCC 1
(V)VCC 2
(V)T
(° C)Ion
Energy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
VCC 1 no. of events
VCC 2 no. of events
1 1
6 6 125 Xe 459 43 67.70
0 43 67.70
1.53E+04 655
1.00E+07 0 0
2 2 1.52E+04 659
3 3 1.42E+04 706
44
1.39E+04 720
5
52 27 109.96
9.17E+03 1090
6 3 9.88E+03 1012
7 2 8.97E+03 1115
8 1 9.87E+03 1013
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Appendix M Summary of SET runs 1 to 15 for the 54AC14 device
Table 26. Summary of SET runs 1 to 15 for the 54AC14 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
1
101
5
25
Ar 599 220
16.60
60
110
33.30
N/A N/A
9.98E+06
0 -
2
3
18.50 37.20
1.43E+08
43.3
1.01E+08
5 9.95E+07
6
2
1.00E+087
8102
Kr 1259 149 41.30 74 82.91
9 1.12E+05 1792
10103
N/A N/A
1.01E+07
11 1.00E+07
12104
9.94E+06
131.00E+07
14105
15 9.89E+06
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Appendix N Summary of SET runs 1 to 6 for the 54AC244 device
Table 27. Summary of SET runs 1 to 6 for the 54AC244 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
1
1 2 25 Xe 459 43 55.90
60 22 111.807.88E+03 1271
1.00E+07
0 -
2 1.06E+04 945 7 7.00E-07
30 43 55.90
1.76E+04 5640 -
4 1.80E+04 556
560 22 111.80
9.04E+03 1108 3 3.00E-07
6 8.74E+03 1147 0 -
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Appendix O Summary of SET runs 1 to 7 for the 54AC374 device
Table 28. Summary of SET runs 1 to 7 for the 54AC374 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
11
2 25
Xe 459 43 55.90
0 43 55.90 1.04E+04 547 5.67E+06 0 -2
21
60 22 111.80
5.35E+03 1871
1.00E+07
3 3.00E-07
2 7 7.00E-07
31
9.79E+03 10224 4.00E-07
2 3 3.00E-07
41
Kr 756 92 32.40 0 92 32.40
1.36E+04 739
0 -
2
51
1.24E+04 8092
61
Ar 372 119 10.10 60 60 20.20
9.47E+03 10572
71
9.12E+03 10982
SET test results for the 54AC164245 (UCL) TN1003
32/42 DocID024527 Rev 1
Appendix P SET test results for the 54AC164245 (UCL)
During irradiation, the SET results in Figure 15, Figure 16, Figure 17, and Figure 18 were observed.
Figure 15. Worst case on run 58, 132Xe26, tilt @ 0°
Figure 16. Worst case on run 41, 132Xe26, tilt @ 52°
DocID024527 Rev 1 33/42
TN1003 SET test results for the 54AC164245 (UCL)
Figure 17. Worst case on run 34, 132Xe26, tilt @ 52°
Figure 18. Worst case on run 16, 132Xe26, tilt @ 52°
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Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device
Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device
Run S/NVCC 1
(V)VCC 2
(V)T
(° C)Ion
Energy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
9
1
5.5 5.5
25 Xe 459 43 67.70 52 27 109.96
1.02E+04 98
1.00E+06
0 -10 9.80E+03 102
115 3
9.17E+03 109
12 9.26E+03 108
2 2.00E-0613
3
59.17E+03 109
14 9.35E+03 107
153
9.09E+03 110 5 5.00E-06
16 9.26E+03 108 13 1.30E-05
17
2
5.5 5.59.09E+03 110 1 1.00E-06
18 8.93E+03 1120 -
195 3
9.35E+03 107
20 9.09E+03 110 3 3.00E-06
213 5
1.03E+04 974 4.00E-06
22 9.17E+03 109
23 Canceled without irradiation
24
2 3 3
25 Xe 459 43 67.70 52 27 109.96
8.85E+03 113
1.00E+06
18 1.80E-05
25 9.62E+03 104 73 7.30E-05
26 1.05E+04 95 61 6.10E-05
273 5.5 5.5 8.77E+03 114 0 -
28
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3
5 3
25 Xe 459 43 67.70
52 27 109.96
9.09E+03 110
1.00E+06
0 -
30 9.52E+03 105 2 2.00E-06
31
3
51.00E+04 100 4 4.00E-06
32 1.06E+04 94 3 3.00E-06
333
1.01E+04 99 8 8.00E-06
34 9.26E+03 108 57 5.70E-05
35
4
5.5 5.51.01E+04 99 1 1.00E-06
36 1.05E+04 95 0 -
375 3
1.00E+04 100 3 3.00E-06
38 1.06E+04 94 2 2.00E-06
39
3
51.04E+04 96
3 3.00E-0640 9.71E+03 103
41
3
1.05E+04 95 7 7.00E-06
42 9.52E+03 105 18 1.80E-05
43 9.62E+03 104 16 1.60E-05
44
1
5 3
0 43 67.70
1.49E+04 670 -
45
3
51.45E+04 69
46 1.39E+04 721 1.00E-06
473
1.41E+04 71
48 1.37E+04 73 8 8.00E-06
492
5.5 5.5 1.39E+04 72 0 -
50 5 3 1.49E+04 67 2 2.00E-06
Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device (continued)
Run S/NVCC 1
(V)VCC 2
(V)T
(° C)Ion
Energy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
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51
2 3
5
25
Xe 459 43 67.70
0
43 67.70
1.45E+04 69
1.00E+06
0 -
52 1.56E+04 64 1 1.00E-06
53
3
1.37E+04 73 5 5.00E-06
54 1.39E+04 72 41 4.10E-05
55
3
5 1.33E+04 750 -
56
3
51.43E+04 70
571.49E+04 67
2 2.00E-06
58
3
4 4.00E-06
59 1.52E+04 66 22 2.20E-05
60
4
5.51.45E+04 69
0 -
615
1 1.00E-06
62 1.49E+04 670 -
63
3
51.47E+04 68
64
1.49E+04 67
2 2.00E-06
653
5 5.00E-06
66 7 7.00E-06
67
1
5
Kr 756 92 31.00 92 31.00
1.47E+04 68 0 -68
369 1.45E+04 69 1 1.00E-06
70
2
5 1.28E+04 780 -
713
5 1.00E+04 100
72 3 1.45E+04 69 1 1.00E-06
Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device (continued)
Run S/NVCC 1
(V)VCC 2
(V)T
(° C)Ion
Energy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
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73 2
3
3
25
Kr 756 92 31.00
0
92 31.00
1.43E+04 70
1.00E+06
12 1.20E-05
74
3
5 1.54E+04 650 -
75
3
1.52E+04 66
76 1.49E+04 67 2 2.00E-06
77
4
5 1.56E+04 640 -
78
3
5 1.47E+04 68
79
3
1.49E+04 67 1 1.00E-06
80 1.43E+04 70
0 -81 1
Ni 567 98 21.30 98 21.30
1.49E+04 67
822
1.45E+04 69
83 1.11E+04 90 1 1.00E-06
84 3 1.19E+04 840 -
85 4 1.45E+04 69
Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device (continued)
Run S/NVCC 1
(V)VCC 2
(V)T
(° C)Ion
Energy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
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Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device
Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
Cross section/
bit
81
5
3 25
Ho 2474 112 70.20
54 66 120.50 4.93E+04 345 9.99E+06 139 1.39E-05 8.70E-07
82 0 112 70.20 4.79E+04 2091.00E+07
79 7.90E-06 4.94E-07
8345 79 99.80
4.57E+04 310 136 1.36E-05 8.50E-07
84 1 4.86E+04 290 9.99E+06 112 1.12E-05 7.01E-07
85 2 0 112 70.20 5.33E+04 188
1.00E+07
79 7.90E-06 4.94E-07
86 3 54 66 120.50 5.25E+04 324 139 1.39E-05 8.69E-07
87
434
93 84.90 5.54E+04 218 99 9.90E-06 6.19E-07
88
Xe 1934 124 52.50
103 63.50 9.97E+04 121 76 7.60E-06 4.75E-07
89 0 124 52.50 9.50E+04 105 52 5.20E-06 3.25E-07
901
20 117 55.90 8.94E+04 119 9.97E+06 69 6.92E-06 4.33E-07
910
124 52.50 8.35E+04 120
1.00E+07
59 5.90E-06 3.69E-07
922
Kr 1259 149 28.50
154 28.50 8.39E+04 119 35 3.50E-06 2.19E-07
9334 124 34.40
8.82E+04 137 29 2.90E-06 1.81E-07
94
3
1.11E+05 224 2.06E+07 73 3.54E-06 2.21E-07
95 54 88 49.00 9.85E+04 344 1.99E+07 99 4.97E-06 3.11E-07
96 45 105 40.50 9.13E+04 309 2.00E+07 80 4.00E-06 2.50E-07
97
4Ar 599 220 8.50
0 220 8.50 1.36E+04 163 1.00E+08 0 - -
98 54 129 14.60 6.09E+05 282 1.01E+08 3 2.97E-08 1.86E-09
99 60 110 17.20 5.99E+05 340 1.02E+082
1.96E-08 1.23E-09
100 5 54 129 21.00 5.38E+05 345 1.09E+08 1.83E-08 1.15E-09
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3 25 Ar 599 220 8.50 54 129
24.90 4.99E+05 346 1.02E+08 1 9.80E-09 6.13E-10
102 33.30 4.52E+05 111 2.96E+07 41 1.39E-06 8.66E-08
103 28.50 4.70E+05 70 1.94E+07 21 1.08E-06 6.77E-08
10425.80
4.99E+05 193 5.66E+07 3 5.30E-08 3.31E-09
1052
4.98E+05 145 4.25E+07 4 9.41E-08 5.88E-09
106 27.10 5.01E+05 99 2.92E+07 12 4.11E-07 2.57E-08
Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device (continued)
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
Cross section/
bit
Su
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Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device
Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device
Run S/NVCC (V)
T (° C)
IonEnergy (MeV)
Range (μm)
LET (MeV-cm2/mg)
Tilt(° )
Effective range
Effective LET (MeV-cm2/mg)
Flux(#/cm2.s)
Time(s)
Fluence(#/cm2)
No. of events
Cross section/device
Cross section/
bit
11
2 25
Xe 459 43 55.90
0 43 55.90 1.04E+04 547 5.67E+0653 9.35E-06 1.17E-06
2 50 8.82E-06 1.10E-06
21
60 22 111.80
5.35E+03 1871
1.00E+07
226 2.26E-05 2.83E-06
2 235 2.35E-05 2.94E-06
31
9.79E+03 1022215 2.15E-05 2.69E-06
2 211 2.11E-05 2.64E-06
41
Kr 756 92 32.40 0 92 32.40
1.36E+04 73955 5.50E-06 6.88E-07
2 56 5.60E-06 7.00E-07
51
1.24E+04 80942 4.20E-06 5.25E-07
2 39 3.90E-06 4.88E-07
61
Ar 372 119 10.10 60 60 20.20
9.47E+03 1057 2 2.00E-07 2.50E-082
71
9.12E+03 109812 1.20E-06 1.50E-07
2 7 7.00E-07 8.75E-08
DocID024527 Rev 1 41/42
TN1003 Revision history
Revision history
Table 32. Document revision history
Date Revision Changes
20-Aug-2013 1 Initial release
TN1003
42/42 DocID024527 Rev 1
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