Avalanche Energy, Single Pulse EAS L=0.5mH, TC=25℃ 400 mJ

Parameter

ID (Sillicon Limited) 100 A

RDS(on),max VGS=4.5V 2.6 mW

Part Number Package Marking

HGN017N04BL DFN5*6 GN017N04BL

V

- A

Continuous Drain Current (Silicon Limited) ID

Gate to Source Voltage VGS

Drain to Source Voltage

400

±20

IDM

-

TC=100℃ 82

Pulsed Drain Current

-

TC=25℃ 100

V

Conditions

A

Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)

VDS

UnitValue

40

Symbol

Absolute Maximum Ratings

125PD TA=25℃Power Dissipation

Operating and Storage Temperature TJ, Tstg -

W

-55 to150 ℃

Thermal Resistance Junction-Ambient

Parameter

Prelim

Max

Dec. 2019

RqJA ℃/W

Symbol Unit

50

Thermal Resistance Junction-Case RqJc 1 ℃/W

P-1

40V N-Ch Power MOSFET

HGN017N04BL

VDS 40 V

1.7 mWRDS(on),max VGS=10V

Drain

Src

Gate

Feature◇ High Speed Power Switching, Logic Level◇ Enhanced Avalanche Ruggedness◇ 100% UIS Tested, 100% Rg Tested◇ Lead Free, Halogen Free

Application◇ Hard Switching and High Speed Circuit◇ DC/DC in Telecoms and Inductrial

DFN5*6

Pin 1

S

S

S

G

D

D

D

D

nC- 12.0

Total Gate Charge

-

Rise time tr

Turn off Delay Time td(off)

-

Qg (4.5V)

Gate to Source Charge Qgs VDD=15V, ID=20A, VGS=10V

-

Gate to Drain (Miller) Charge Qgd

HGN017N04BL

9.0 -

Turn on Delay Time td(on)

VDD=15V, ID=20A, VGS=10V,

RG=3.3W,

-

Fall Time tf -

-

-

-

-

-

-

Dynamic Characteristics

-

Dec. 2019

VGS=0V, IF=1A - - 1.2 V

ns

32.0

Reverse Diode Characteristics

Diode Forward Voltage

-58.5

18.5

VSD

82

Coss -

3972

- 18.5

45.0

Prelim

mAVGS=0V, VDS=32V, Tj=55℃ - - 5

- 1

±100 nA

VGS(th) VGS=VDS, ID=250mA 1.2 1.6

Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250mA

VGS=10V, ID=20A - 1.4RDS(on)

Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - -

Zero Gate Voltage Drain Current IDSS

VGS=0V, VDS=32V, Tj=25℃ -

P-2

Electrical Characteristics at Tj=25℃ (unless otherwise specified)

Static Characteristics

Parameter Symbol

2-VGS=4.5V, ID=20A

Transconductance

ConditionsValue

Unittyp

40V

2.2

-

min

-

max

Gate Threshold Voltage

Input Capacitance Ciss

VGS=0V, VDS=20V, f=1MHz

- S

pF-

1.7mW

2.6Drain to Source on Resistance

-53

Crss

VDS=5V, ID=20Agfs

Reverse Transfer Capacitance

1119

-

Output Capacitance

-

P-3

Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage

HGN017N04BL

Prelim Dec. 2019

Figure 3. Normalized VGS(th) vs. Junction Temperature Figure 4. Normalized On-Resistance vs. Junction Temperature

Figure 5. Typical Source-Drain Diode Forward Voltage Figure 6. Typical Capacitance vs. Drain-to-Source Voltage

HGN017N04BL P-4

Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Maximum Safe Operating Area

Figure 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient

Prelim Dec. 2019

Prelim Dec. 2019

P-5

Inductive switching Test

Gate Charge Test

Uclamped Inductive Switching (UIS) Test

Diode Recovery Test

HGN017N04BL