3rd generation solar cells at ntnu - sintef · 3rd generation solar cells at ntnu ... nanomaterials...
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3rd Generation Solar Cells at NTNU
Turid Worren ReenaasDepartment of Physics
Norwegian University of Science and technology [email protected]
100nm
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Outline
The research groupWho are we and what can we do?
Intermediate-band solar cellsWorking principleTheoretical limitPractical realization
Intermediate-band solar cell research at NTNUMaterial system and samplesMaterial characterization (preliminary results from AFM, PL, TEM)Solar cell structure Preliminary cell characterisation
Summary
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Solar cell physics group at NTNU
Department of physics
• 3 master students
• 3 PhD students Sedsel Fretheim Thomassen, Rune Strandberg and NN1 (2008)
• 1/3 + 1 Post docs Øyvind Borck, NN2 (from 2008)
• 1 + 1/2 Scientific staff Turid Worren Reenaas, Ola Hunderi, Ingve Simonsen, Randi Holmestad, Jon-Andreas Støvneng
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Solar cell physics group at NTNU
Department of Electronics and Telecommunications
• 1 master student
• 1 Post doc NN3 (starting 2008-05-01 )
• 1/4 Scientific staff Bjørn-Ove Fimland, Helge Weman
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Other groups
Department of Materials Science and Engineering
• 1 master student
• 1 postdocEdita Garskaite
• 1/4 Scientific staff Tor Grande, Mari-Ann Einarsrud
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Projects and funding
1 PhD student and 1+1/3 Post doc financed by NTNU (2005 –2010)
1 PhD student financed by The Research Council of Norway through the PhD-pool of The Centre for Renewable Energy (SFFE) (2005 – 2009)
2 Post docs (and SINTEF staff) financed by The Research Council of Norway: “3rd generation PV” (2008 – 2011)
1 PhD student financed by The Nordic Energy Research “Nordic Centre of Excellence in Photovoltaics”, (2008 – 2011) Project leader Arve Holt, IFE
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Focus areas
Department of Materials Science and EngineeringTransparent conducting oxidesMaterials for up-conversion of solar radiation
Department of physics and Department of electronics and telecommunication (IET)Materials for intermediate band solar cellsNanomaterials for 3rd generation solar cells
Material deposition and characterization Modelling (material properties and cell performance)Solar cell fabrication (NTNU Nanolab and clean room at IET)Solar cell testing
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Material growth/deposition techniques - 1
Control down to the atomic scale:
Molecular beam epitaxy (MBE)At NTNU since mid 1980’s, but limited to certain elements (Ga, In, Al, Sb, As, Te, Be)
Pulsed laser deposition (PLD)At NTNU Department of physics from 2008, essentially no element limitation (but we start with Si, Ge)
Metal-organic Chemical Vapour Deposition (MOCVD)From 2008 (SINTEF)
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Material growth/deposition techniques - 2
Less control, more suitable for large scale production?
Chemical solution deposition and sol-gelSince late 1990s
Close spaced vapour transport From 2008
Sputter deposition (SINTEF)From 2006
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Molecular beam epitaxy (MBE)
Deposition takes place in a ultra high vacuum (UHV) chamber, background pressure typ. 10-10 mbar
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Solar cell processing
Class 100 clean room of 215 m2 at Department of Electronics and Telecommunication
From 2009 (?), we will also have access to state-of-the-art processing and characterization facilities at the NTNU-NanoLab
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Outline
The research groupWho are we and what can we do?
Intermediate-band solar cellsWorking principleTheoretical limitPractical realization
Intermediate-band solar cell research at NTNUMaterial system and samplesMaterial characterization (preliminary results from AFM, PL, TEM)Solar cell structure Preliminary cell characterisation
Summary
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(Quantum Dot) Intermediate Band Solar Cells
Principal Investigator: T. Worren Reenaas
Partners NTNU
PhD students: S. Fretheim Thomassen and R. StrandbergProfessors: B.O. Fimland (MBE), O. Hunderi (semiconductor Physics), R. Holmestad and J. Walmsley (TEM), H. Weman(PL/PLE)
Chalmers University of Technology (for sample preparation)M. Sadeghi and S. Wang
Linköping University (for photoluminescence measurements)A. Larsson and P.-O. Holtz
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Energy diagram of a conventional solar cell*
Conduction band
Valence band
A smaller bandgap would result in a larger photo-generated current, but the voltage delivered by the solar cell is always smaller than the bandgap (divided by the electron charge).
*Omitting the pn-junction and contacts
Ele
ctro
n E
nerg
y
Band gap
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Intermediate band solar cell
Conduction band
Valence band
Intermediate band
Increase the photo-generated current without reducing the bandgap and thus the voltage.
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Ideal intermediate band solar cell
Assumptions: 1) Only radiative recombination2) One electron-hole pair per photon3) Constant quasi-Fermi levels4) Absorption of all photons Eg>E5) No high energy photons in low energy processes6) Maximum concentration of solar radiation
Theoretical efficiency A.S. Brown, M. A. Green and R. P. Corkish, Physica E 14 (2002) 121
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Theoretical efficiency
E12
Conduction band
Intermediate band
Valence band
ΔΔ11
E23E13
Conduction band
2nd intermediate band
1st intermediate band
Valence band
ΔΔ11
ΔΔ22
E34
E23
E12
E14
E12 = 0.71 eV
E23 = 1.24 eV
E13 = 1.97 eV
Δ1 = 0.02 eV
ηmax = 63.2 %
E12 = 0.53 eV
E23 = 0.89 eV
E34 = 1.02 eV
E14 = 2.56 eV
Δ1 = 0.07 eV
Δ2 = 0.05 eV
ηmax = 71.7 %
For a conventional single bandgap cell: ηmax= 40.7%
One intermediate band
Two intermediate bands
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Answer:
Introduce quantum dots
How can we introduce these intermediate energy levels in the bandgap?
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Quantum dots
A quantum dot is a nanometersized particle of a low band gap material surrounded by a material with larger band gap: “Artificial atom” with energy levels depending on dot size and on the bandgap difference.
If many quantum dots are placed closed to each other in a lattice one or more intermediate bands can be formed and a new semiconductor with tailored properties has been made.
~nm
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How can one fabricate quantum dots?
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Self-organized growth of quantum dots
Difference in lattice constants (ad > as) compresses the deposited layer in-plane. The deposited material relaxes (self-organizes) to form pyramidal shaped islands when the deposited layer is thicker than a critical thickness.
Quantum dots Wetting layer
Substrate
z
Lattice constant as
Deposit a few atomic layers of quantum dot material, with lattice constant ad > as.
Finally grow a layer of barrier (large bandgap) material
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Quantum dot intermediate band solar cell
p-type n-type
A single dot absorbs little solar radiation:
A high layer density of quantum dots and many layers stacked on top of each other are needed.
The quantum dots are simply placed in the pn-junction of the conventional solar cell, to form a pin-junction.
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Outline
The research groupWho are we and what can we do?
Intermediate-band solar cellsWorking principleTheoretical limitPractical realization
Intermediate-band solar cell research at NTNUMaterial system and samplesMaterial characterization (preliminary results from AFM, PL, TEM)Solar cell structure Preliminary cell characterisation
Summary
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08 2.0
Lattice constant (Å)
Ban
d ga
p (e
V)
InAs/Al0.35Ga0.65As
E13=1.97eV
E12 = 1.24eV
Bandgap quantum dot < bandgap barrier/substrateRequirements for self organized growth: ad > as
Quantization energy due to quantum confinement
Material system E12
Valence band
Intermediate band
Conduction band
ΔΔ11
E23 E13
Ideal gaps:
E13
E12
Quantization energy
Bandgap quantum dot semiconductor
Eg=1.86eVEg=0.36eV
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First attempts to grow (several) layers of QDs
All samples grown on GaAs substrates, since Al(Ga)As substratesare not available. GaAs and Al(Ga)As have very similar lattice constant, so the self organized growth process should be similar.
All samples fabricated at Chalmers University of Technology, Gothenburg.
Growth of InAs quantum dots on AlAs surfaces (on GaAs)Growth of InAs quantum dots on AlGaAs surfaces (on GaAs)
Growth of AlGaAs/InAs/GaAs QD intermediate band solar cells
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Atomic Force Microscopy (AFM)
1 QD layerA V B V
GaAs/AlAs/InAs/AlAs/GaAs GaAs/AlAs/GaAs/InAs/GaAs/AlAs/GaAs
Dot size typ: Diameter 100-200nm (very large)Height 2-7nm
Dot density: 1010 cm-2 (too low)
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08Photoluminescence (PL) at 2K
IncreasingexcitationIntensity, Iex
1.21 eV1.12 eVP1
P2
P1
P2
P1 P2
Stronger PL than A, and E(P1B)<E(P1A).
1 QD layerA V B V
GaAs/AlAs/InAs/AlAs/GaAs GaAs/AlAs/GaAs/InAs/GaAs/AlAs/GaAs
The phonon bottleneck results in population of higher levels.
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TEM images of MBE grown QDs
InAs quantum dots in GaAs/AlAs (first set of samples)
Wetting layers
Quantum dots (form on top of each other)
The quantum dots inside the sample are smaller than the dots on the surface.AFM images should be recorded in situ, or immediately after growth.
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Elemental mapping
As
In
Ga
Al
STEM image EDS mapping
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High resolution images
HRTEM makes it possible to find structural defects
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Growth of 3 and 5 QD layers with/without barrier annealing
GaAs substrate
GaAs
Al0.35Ga0.65As
InAs
Without barrier annealing
With barrier annealing
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In-situ RHEED
In-situ Reflection High-Energy Electron Diffraction (RHEED) has been used to study the growth.
RHEED shows that the crystalline quality of the AlGaAs barriersis best for the annealed samples.
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Photoluminescence3 layers with and without annealing
PL intensity decreaseswith annealing, NOT as desired
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TEM images from the 2nd sample set
InAs quantum dots in AlGaAs
More defects and irregular wetting layer for the samples with AlGaAsbarriers.
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(Heterostructure) Quantum dot IB solar cells
GaAs n+ substrate
200 nm GaAs n+ (2 1018cm-3) buffer
100nm AlGaAs n+ (2 1018cm-3) barrier
300nm AlGaAs n (2 1017cm-3) barrier
200nm AlGaAs p (2 1018cm-3) barrier
100nm AlGaAs p+ (2 1019cm-3) barrierGaAs p+ (1019cm-3) capping
GaAs substrate
GaAs
Al0.35Ga0.65As
InAs
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Band diagram (short circuit)
GaA
s
GaA
s
AlG
aAs
AlG
aAs
QD
layers
AlG
aAs
AlG
aAs
GaA
sn i p
1.21eV1.86eV
0.65eVFermi level EF
1μm
p+n+
FrontBackside
Ideal values: 1.97eV, 1.24eV and 0.71eV
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Solar cell efficiency - Preliminary results
Very poor, unfortunatelyOnly 1-2% , even for the reference cellVery low short circuit current, open-circuit voltage also too low
Possible explanationsPartly due to poor material quality (high recombination, high series resistance), Poor electrical contacts (partially shunted cell?) and/or Poor testing equipment (test cells from IFE yielded only half ofexpected efficiency)?? Work in progress
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Summary
Materials research on III-V based quantum dot based intermediate solar cells has been initiated at NTNU (in collaboration with Chalmers University of Technology and Linköping University)
Samples with up to five layers of quantum dots have been fabricated by MBE and materials characterization has been initiated
A first set of solar cells with and without quantum dots have been fabricated and processed, but the preliminary solar cell testing gave poor result
Theoretical simulations of intermediate band solar cells have also been initiated