2sk3371(te16l1,nq) toshiba
TRANSCRIPT
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2SK3371
2010-02-051
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV)
2SK3371
Switching Regulator Applications
Features
Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)
High forward transfer admittance: |Yfs| = 0.85 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS= 20 k) VDGR 600 V
Gate-source voltage VGSS 30 V
DC (Note 1) ID 1Drain current
Pulse (Note 1) IDP 2A
Drain power dissipation (Tc = 25C) PD 20 W
Single-pulse avalanche energy(Note 2)
EAS 56 mJ
Avalanche current IAR 1 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 C
Storage temperature range Tstg 55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 6.25 C/W
Thermal resistance, channel to ambient Rth (ch-a) 125 C/W
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD= 90 V, Tch= 25C, L = 100 mH, IAR= 1 A, RG= 25
Note 3: Repetitive rating: pulse width limited by max channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1 0.2
0.1
0.1
1.05 MAX.
2.3 0.15
5.2 0.2
0.8 MAX.
0.6 MAX.
9.5
0.3
1.2
MAX.
1.5
0.26.5 0.2
1 2 3
0.6 MAX.
5.5
0.2
0.6 0.15
2.3
0.2
2.3 0.15
3
2
11. GATE
2. DRAIN
HEAT SINK
3. SOURSE
JEDEC
JEITA
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
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Electrical Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS=25 V, VDS= 0 V 10 A
Gate-source breakdown voltage V (BR) GSS IG=10 A, VDS= 0 V 30 V
Drain cutoff current IDSS VDS= 600 V, VGS= 0 V 100 ADrain-source breakdown voltage V (BR) DSS ID= 10 mA, VGS= 0 V 600 V
Gate threshold voltage Vth VDS= 10 V, ID= 1 mA 2.0 4.0 V
Drain-source ON-resistance RDS (ON) VGS= 10 V, ID= 0.5 A 6.4 9.0
Forward transfer admittance Yfs VDS= 10 V, ID= 0.5 A 0.4 0.85 S
Input capacitance Ciss 190
Reverse transfer capacitance Crss 15
Output capacitance Coss
VDS= 10 V, VGS= 0 V, f= 1 MHz
55 pF
Rise time tr 12 Turn-on time ton 55
Fall time tf 40
Switching time
Turn-off time toff 90
ns
Total gate charge(gate-source plus gate-drain)
Qg 9
Gate-source charge Qgs 3.5
Gate-drain (Miller) charge Qgd
VDD 400 V, VGS= 10 V, ID= 1 A
5.5
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current IDR 1 A
Pulse drain reverse current IDRP 2 A
Diode forward voltage VDSF IDR= 1 A, VGS= 0 V 1.7 V
Reverse recovery time trr 400 ns
Reverse recovery charge Qrr
IDR= 1 A, VGS= 0 V,
dIDR/dt = 100 A/s 1.4 C
Marking
Duty 1%, tw= 10 s
0 V
10VVGS
RL=600
VDD 300 V
ID= 0.5A VOUT
50
K3371
Lot No.
Note 4
Part No.
(or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic
equipment.
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Forward
trans
fera
dm
ittance
Yfs
(S)
Dra
in-sourcevo
ltage
VDS
(V)
Drain-source voltage VDS (V)
ID VDS
Dra
incurren
t
ID
(A)
Drain-source voltage VDS (V)
ID VDS
Dra
incurren
t
ID
(A)
Gate-source voltage VGS (V)
ID VGS
D
raincurren
t
ID
(A)
Gate-source voltage VGS (V)
VDS VGS
Drain current ID (A)
Yfs ID
Drain current ID (A)
Dra
in-source
ON-res
istance
RDS(ON)
()
RDS (ON) ID
00 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
VGS= 3.75 V
4
4.25
4.5
4.75
568
10Common source
Tc = 25C
Pulse test
00 10 20 30 40 50
0.4
0.8
1.2
1.6
2.0
VGS= 4 V
4.5
10Common source
Tc = 25C
Pulse test
4.25
86
5.5
5.25
5
4.75
00 2 4 6 8 10
0.4
0.8
1.2
1.6
2.0
Tc =55C 25
100
Common source
VDS= 20 V
Pulse test
00 4 8 12 16 20
4
8
12
16
20
ID= 1 A
Common source
Tc = 25C
Pulse test
0.25
0.5
0.10.03 0.05 0.1 0.3 0.5 1 3
0.3
0.5
1
3
Tc =55C
Common source
VDS= 20 V
Pulse test
25
100
10.03 0.05 0.1 0.3 0.5 1 3
3
5
10
30
Common source
Tc = 25C
Pulse test
VGS= 10 V
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Dra
inpower
diss
ipa
tion
PD
(W)
Ga
tethres
ho
ldvo
ltage
Vth
(V)
Case temperature Tc (C)
RDS (ON) Tc
Dra
in-source
ON-res
istance
RDS(ON)
()
Drain-source voltage VDS (V)
IDR VDS
Dra
inreversecurren
tIDR
(A)
C
apac
itance
C
(pF)
Case temperature Tc (C)
Vth Tc
Case temperature Tc (C)
PD Tc
Ga
te-sourcevo
ltage
VGS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Dra
in-sourcevo
ltage
VDS
(V)
Drain-source voltage VDS (V)
Capacitance VDS
080 40 0 40 80 120 160
4
8
12
16
20
ID= 1 A
0.5
0.25
Common source
VGS= 10 V
Pulse test
0.010 0.2 0.4 0.6 0.8 1.0 1.2
0.03
0.05
0.1
0.3
0.5
1
3
5
10
VGS= 0 V, 1 V13
10
Common source
Tc = 25C
Pulse test
500
100
10
1
3
30
300
0.1 1 10 1000.3 3 300.5 5 50
5
50
Ciss
Coss
Crss
Common source
VGS= 0 V
f= 1 MHz
Tc = 25C080 40 0 40 80 120 160
1
2
3
4
5
Common source
VDS= 10 V
ID= 1 mA
Pulse test
00 40 80 120 160 200
10
20
30
40
50
00 4 8 12 16 20
100
200
300
400
500
Common source
ID= 1 A
Tc = 25C
Pulse test
VDD= 400 V
200
100
VDS
VGS
0
4
8
12
16
20
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Safe operating area
Dra
incurren
t
ID
(A)
Channel temperature (initial) Tch (C)
EAS Tch
Ava
lanc
heenergy
E
AS
(mJ)
rth tw
Pulse width tw (s)
Norma
lize
dtrans
ien
ttherma
limpeda
nce
rth(t)/
Rth(ch-c
)
Drain-source voltage VDS (V)
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
T
PDM
t
Duty = t/TRth (ch-c)= 6.25C/W
Single pulse
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
025 50 75 100 125 150
20
40
60
80
100
15V15V
Test circuit Waveform
IAR
BVDSS
VDD VDS
RG= 25 VDD= 90 V, L = 100 mH
=
VDDBVDSS
BVDSS2IL2
1AS
0.011 10 100 1000
0.1
1
10
ID max (pulsed) *
VDSS max
ID max (continuous)
DC Tc = 25C
100 s *
1 ms *
*Single nonrepetitive pulse
Tc = 25C
Curves must be derated linearly
with increase in temperature.
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