2sk3371(te16l1,nq) toshiba

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  • 7/29/2019 2sk3371(Te16l1,Nq) Toshiba

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    2SK3371

    2010-02-051

    TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV)

    2SK3371

    Switching Regulator Applications

    Features

    Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)

    High forward transfer admittance: |Yfs| = 0.85 S (typ.)

    Low leakage current: IDSS = 100 A (max) (VDS = 600 V)

    Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

    Absolute Maximum Ratings (Ta = 25C)

    Characteristic Symbol Rating Unit

    Drain-source voltage VDSS 600 V

    Drain-gate voltage (RGS= 20 k) VDGR 600 V

    Gate-source voltage VGSS 30 V

    DC (Note 1) ID 1Drain current

    Pulse (Note 1) IDP 2A

    Drain power dissipation (Tc = 25C) PD 20 W

    Single-pulse avalanche energy(Note 2)

    EAS 56 mJ

    Avalanche current IAR 1 A

    Repetitive avalanche energy (Note 3) EAR 2 mJ

    Channel temperature Tch 150 C

    Storage temperature range Tstg 55 to 150 C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

    temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

    operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

    reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and

    Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Thermal Characteristics

    Characteristic Symbol Max Unit

    Thermal resistance, channel to case Rth (ch-c) 6.25 C/W

    Thermal resistance, channel to ambient Rth (ch-a) 125 C/W

    Note 1: Ensure that the channel temperature does not exceed 150C.

    Note 2: VDD= 90 V, Tch= 25C, L = 100 mH, IAR= 1 A, RG= 25

    Note 3: Repetitive rating: pulse width limited by max channel temperature

    This transistor is an electrostatic-sensitive device. Handle with care.

    Unit: mm

    1.1 0.2

    0.1

    0.1

    1.05 MAX.

    2.3 0.15

    5.2 0.2

    0.8 MAX.

    0.6 MAX.

    9.5

    0.3

    1.2

    MAX.

    1.5

    0.26.5 0.2

    1 2 3

    0.6 MAX.

    5.5

    0.2

    0.6 0.15

    2.3

    0.2

    2.3 0.15

    3

    2

    11. GATE

    2. DRAIN

    HEAT SINK

    3. SOURSE

    JEDEC

    JEITA

    TOSHIBA 2-7J1B

    Weight: 0.36 g (typ.)

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    2SK3371

    2010-02-052

    Electrical Characteristics (Ta = 25C)

    Characteristic Symbol Test Condition Min Typ. Max Unit

    Gate leakage current IGSS VGS=25 V, VDS= 0 V 10 A

    Gate-source breakdown voltage V (BR) GSS IG=10 A, VDS= 0 V 30 V

    Drain cutoff current IDSS VDS= 600 V, VGS= 0 V 100 ADrain-source breakdown voltage V (BR) DSS ID= 10 mA, VGS= 0 V 600 V

    Gate threshold voltage Vth VDS= 10 V, ID= 1 mA 2.0 4.0 V

    Drain-source ON-resistance RDS (ON) VGS= 10 V, ID= 0.5 A 6.4 9.0

    Forward transfer admittance Yfs VDS= 10 V, ID= 0.5 A 0.4 0.85 S

    Input capacitance Ciss 190

    Reverse transfer capacitance Crss 15

    Output capacitance Coss

    VDS= 10 V, VGS= 0 V, f= 1 MHz

    55 pF

    Rise time tr 12 Turn-on time ton 55

    Fall time tf 40

    Switching time

    Turn-off time toff 90

    ns

    Total gate charge(gate-source plus gate-drain)

    Qg 9

    Gate-source charge Qgs 3.5

    Gate-drain (Miller) charge Qgd

    VDD 400 V, VGS= 10 V, ID= 1 A

    5.5

    nC

    Source-Drain Diode Ratings and Characteristics (Ta = 25C)

    Characteristic Symbol Test Condition Min Typ. Max Unit

    Continuous drain reverse current IDR 1 A

    Pulse drain reverse current IDRP 2 A

    Diode forward voltage VDSF IDR= 1 A, VGS= 0 V 1.7 V

    Reverse recovery time trr 400 ns

    Reverse recovery charge Qrr

    IDR= 1 A, VGS= 0 V,

    dIDR/dt = 100 A/s 1.4 C

    Marking

    Duty 1%, tw= 10 s

    0 V

    10VVGS

    RL=600

    VDD 300 V

    ID= 0.5A VOUT

    50

    K3371

    Lot No.

    Note 4

    Part No.

    (or abbreviation code)

    Note 4: A line under a Lot No. identifies the indication of product Labels.

    Not underlined: [[Pb]]/INCLUDES > MCV

    Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

    Please contact your TOSHIBA sales representative for details as to environmental

    matters such as the RoHS compatibility of Product. The RoHS is the Directive

    2002/95/EC of the European Parliament and of the Council of 27 January 2003 on

    the restriction of the use of certain hazardous substances in electrical and electronic

    equipment.

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    2SK3371

    2010-02-053

    Forward

    trans

    fera

    dm

    ittance

    Yfs

    (S)

    Dra

    in-sourcevo

    ltage

    VDS

    (V)

    Drain-source voltage VDS (V)

    ID VDS

    Dra

    incurren

    t

    ID

    (A)

    Drain-source voltage VDS (V)

    ID VDS

    Dra

    incurren

    t

    ID

    (A)

    Gate-source voltage VGS (V)

    ID VGS

    D

    raincurren

    t

    ID

    (A)

    Gate-source voltage VGS (V)

    VDS VGS

    Drain current ID (A)

    Yfs ID

    Drain current ID (A)

    Dra

    in-source

    ON-res

    istance

    RDS(ON)

    ()

    RDS (ON) ID

    00 2 4 6 8 10

    0.2

    0.4

    0.6

    0.8

    1.0

    VGS= 3.75 V

    4

    4.25

    4.5

    4.75

    568

    10Common source

    Tc = 25C

    Pulse test

    00 10 20 30 40 50

    0.4

    0.8

    1.2

    1.6

    2.0

    VGS= 4 V

    4.5

    10Common source

    Tc = 25C

    Pulse test

    4.25

    86

    5.5

    5.25

    5

    4.75

    00 2 4 6 8 10

    0.4

    0.8

    1.2

    1.6

    2.0

    Tc =55C 25

    100

    Common source

    VDS= 20 V

    Pulse test

    00 4 8 12 16 20

    4

    8

    12

    16

    20

    ID= 1 A

    Common source

    Tc = 25C

    Pulse test

    0.25

    0.5

    0.10.03 0.05 0.1 0.3 0.5 1 3

    0.3

    0.5

    1

    3

    Tc =55C

    Common source

    VDS= 20 V

    Pulse test

    25

    100

    10.03 0.05 0.1 0.3 0.5 1 3

    3

    5

    10

    30

    Common source

    Tc = 25C

    Pulse test

    VGS= 10 V

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    2SK3371

    2010-02-054

    Dra

    inpower

    diss

    ipa

    tion

    PD

    (W)

    Ga

    tethres

    ho

    ldvo

    ltage

    Vth

    (V)

    Case temperature Tc (C)

    RDS (ON) Tc

    Dra

    in-source

    ON-res

    istance

    RDS(ON)

    ()

    Drain-source voltage VDS (V)

    IDR VDS

    Dra

    inreversecurren

    tIDR

    (A)

    C

    apac

    itance

    C

    (pF)

    Case temperature Tc (C)

    Vth Tc

    Case temperature Tc (C)

    PD Tc

    Ga

    te-sourcevo

    ltage

    VGS

    (V)

    Total gate charge Qg (nC)

    Dynamic input/output characteristics

    Dra

    in-sourcevo

    ltage

    VDS

    (V)

    Drain-source voltage VDS (V)

    Capacitance VDS

    080 40 0 40 80 120 160

    4

    8

    12

    16

    20

    ID= 1 A

    0.5

    0.25

    Common source

    VGS= 10 V

    Pulse test

    0.010 0.2 0.4 0.6 0.8 1.0 1.2

    0.03

    0.05

    0.1

    0.3

    0.5

    1

    3

    5

    10

    VGS= 0 V, 1 V13

    10

    Common source

    Tc = 25C

    Pulse test

    500

    100

    10

    1

    3

    30

    300

    0.1 1 10 1000.3 3 300.5 5 50

    5

    50

    Ciss

    Coss

    Crss

    Common source

    VGS= 0 V

    f= 1 MHz

    Tc = 25C080 40 0 40 80 120 160

    1

    2

    3

    4

    5

    Common source

    VDS= 10 V

    ID= 1 mA

    Pulse test

    00 40 80 120 160 200

    10

    20

    30

    40

    50

    00 4 8 12 16 20

    100

    200

    300

    400

    500

    Common source

    ID= 1 A

    Tc = 25C

    Pulse test

    VDD= 400 V

    200

    100

    VDS

    VGS

    0

    4

    8

    12

    16

    20

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    2SK3371

    2010-02-055

    Safe operating area

    Dra

    incurren

    t

    ID

    (A)

    Channel temperature (initial) Tch (C)

    EAS Tch

    Ava

    lanc

    heenergy

    E

    AS

    (mJ)

    rth tw

    Pulse width tw (s)

    Norma

    lize

    dtrans

    ien

    ttherma

    limpeda

    nce

    rth(t)/

    Rth(ch-c

    )

    Drain-source voltage VDS (V)

    0.001

    0.00001 0.0001 0.001 0.01 0.1 1 10

    0.01

    0.1

    1

    10

    T

    PDM

    t

    Duty = t/TRth (ch-c)= 6.25C/W

    Single pulse

    Duty = 0.5

    0.2

    0.1

    0.05

    0.02

    0.01

    025 50 75 100 125 150

    20

    40

    60

    80

    100

    15V15V

    Test circuit Waveform

    IAR

    BVDSS

    VDD VDS

    RG= 25 VDD= 90 V, L = 100 mH

    =

    VDDBVDSS

    BVDSS2IL2

    1AS

    0.011 10 100 1000

    0.1

    1

    10

    ID max (pulsed) *

    VDSS max

    ID max (continuous)

    DC Tc = 25C

    100 s *

    1 ms *

    *Single nonrepetitive pulse

    Tc = 25C

    Curves must be derated linearly

    with increase in temperature.

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    2SK3371

    2010-02-056

    RESTRICTIONS ON PRODUCT USE

    Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the informationin this document, and related hardware, software and systems (collectively Product) without notice.

    This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even withTOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission.

    Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are

    responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software andsystems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

    injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

    Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

    all relevant TOSHIBA information, including without l imitation, this document, the specifications, the data sheets and application notes

    for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the

    instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

    own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

    design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

    diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

    parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR

    APPLICATIONS.

    Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuringequipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

    Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

    reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or seriouspublic impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

    in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling

    equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric

    power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

    document.

    Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

    Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under anyapplicable laws or regulations.

    The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for anyinfringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to

    any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

    ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALEFOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

    LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND

    LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO

    SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS

    FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

    Do not use or otherwise make available Product or related software or technology for any mili tary purposes, including withoutlimitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile

    technology products (mass destruction weapons). Product and related software and technology may be controlled under the

    Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product

    or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

    Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

    including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurr ing as a result of

    noncompliance with applicable laws and regulations.