2sk3115

MOS FIELD EFFECT TRANSISTOR

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© 1998, 2001

2SK3115SWITCHING

N-CHANNEL POWER MOS FETINDUSTRIAL USE

Document No. D13338EJ2V0DS00 (2nd edition)Date Published January 2001 NS CP (K)Printed in Japan

DATA SHEET

The mark shows major revised points.

DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and

designed for high voltage applications such as switching power supply, AC adapter.

FEATURES• Low gate charge

QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (T A = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 600 V

Gate to Source Voltage (VDS = 0 V) VGSS ±30 V

Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A

Drain Current (pulse) Note1ID(pulse) ±24 A

Total Power Dissipation (TA = 25°C) PT1 2.0 W

Total Power Dissipation (TC = 25°C) PT2 35 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −55 to +150 °C

Single Avalanche Current Note2IAS 6.0 A

Single Avalanche Energy Note2EAS 24 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3115 Isolated TO-220

(Isolated TO-220)

Data Sheet D13338EJ2V0DS2

2SK3115

ELECTRICAL CHARACTERISTICS (T A = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA

Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.0 A 2.0 S

Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 3.0 A 0.9 1.2 Ω

Input Capacitance Ciss VDS = 10 V 1100 pF

Output Capacitance Coss VGS = 0 V 200 pF

Reverse Transfer Capacitance Crss f = 1 MHz 20 pF

Turn-on Delay Time td(on) VDD = 150 V, ID = 3.0 A 18 ns

Rise Time tr VGS(on) = 10 V 12 ns

Turn-off Delay Time td(off) RG = 10 Ω, RL = 50 Ω 50 ns

Fall Time tf 15 ns

Total Gate Charge QG VDD = 450 V 26 nC

Gate to Source Charge QGS VGS = 10 V 6 nC

Gate to Drain Charge QGD ID = 6.0 A 10 nC

Body Diode Forward Voltage VF(S-D) IF = 6.0 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 1.4 µs

Reverse Recovery Charge Qrr di/dt = 50 A/µs 6.5 µC

TEST CIRCUIT 3 GATE CHARGE

VGS = 20 → 0 VPG.

RG = 25 Ω

50 Ω

D.U.T.L

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.RL

VDD

TEST CIRCUIT 2 SWITCHING TIME

RG

PG.

IG = 2 mA

50 Ω

D.U.T.RL

VDD

IDVDD

IASVDS

BVDSS

Starting Tch

VGS

0

τ = 1 µsDuty Cycle ≤ 1%

τ

VGSWave Form

VDSWave Form

VGS

VDS

10%0

0

90%

90%

90%

VGS(on)

VDS

ton toff

td(on) tr td(off) tf

10% 10%

Data Sheet D13338EJ2V0DS 3

2SK3115

TYPICAL CHARACTERISTICS (T A = 25°C)

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

Tch - Channel Temperature - ˚C

dT -

Per

cent

age

of R

ated

Pow

er -

%

0 4020 60 100 14080 120 160

100

80

60

40

20

0

TC - Case Temperature - ˚C

PT

- T

otal

Pow

er D

issi

patio

n -

W

0 8020 40 60 100 140120 160

80

60

40

20

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

FORWARD BIAS SAFE OPERATING AREA

10 100 1000

ID -

Dra

in C

urre

nt -

A

1

VDS - Drain to Source Voltage - V

100

10

1

0.1

Power Dissipation Limited

100 µs

10 ms

1 ms

100 ms

PW = 10 µs

RDS(on) Limited

ID(pulse)

ID(DC)

TC = 25˚CSingle Pulse

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

r th

(t) -

Tra

nsie

nt T

herm

al R

esis

tanc

e -

˚C/W

100 m 1 10 100 100010 m1 m100 µ10 µ

100

10

1

0.1

0.01

Rth(ch-A) = 62.5˚C/W

Rth(ch-C) = 3.57˚C/W


2SK3115

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE


ID -

Dra

in C

urre

nt -

A

10 4020 30

5

15

20

10

0

25

6 V

VGS = 10 V

8 V

Pulsed

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

151050

100

10

1.0

0.1

VDS = 10 VPulsed

Tch = 125˚C 75˚C

Tch = 25˚C−25˚C

GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE


VG

S(o

ff) -

Gat

e C

ut-o

ff V

olta

ge -

V

−50 0 50 100 150

5.0

4.0

3.0

2.0

1.0

0

VDS = 10 V

ID = 1mA

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

1.0 10

ID - Drain Current - A

| yfs

| -

For

war

d T

rans

fer

Adm

ittan

ce -

S

10

0.1

1.0

0.1

VDS = 10 VPulsed

Tch = −25˚C 25˚C 75˚C 125˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE

8 2016

2.0

VGS - Gate to Source Voltage - V

RD

S (

on) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e -

Ω

ID = 6.0 A3.0 A

1.0

04 12

Pulsed

0

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

1.0 10 100

0.8


RD

S(o

n) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e -

Ω

0.4

2.0

0

1.2

1.6

VGS = 10 V20 V

Pulsed


2SK3115

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

50 150

RD

S (

on) -

Dra

in to

Sou

rce

On-

stat

e R

esis

tanc

e -

Ω

ID = 6.0 A3.0 A

2.0

00 100−50


3.0

1.0

VGS = 10 V

Pulsed

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD -

Dio

de F

orw

ard

Cur

rent

- A

1.51.00.50

100

10

1.0

0.1

Pulsed

0 VVGS = 10 V

1000100101.0

10000

1000

100

10

1

CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE

Cis

s, C

oss,

Crs

s -

Cap

acita

nce

- pF

Ciss

Coss

Crss


VGS = 0 Vf = 1 MHz

SWITCHING CHARACTERISTICS

0.1 1 10


td(o

n), t

r, td

(off)

, tf -

Sw

itchi

ng T

ime

- ns

100

10

1

0.1

VDD = 150 VVGS = 10 VRG = 10 Ω

td(off)

td(on)

tf

tr

REVERSE RECOVERY TIME vs.DRAIN CURRENT

1.0 10 100

trr -

Rev

erse

Rec

over

y T

ime

- ns

0.1


10000

1000

100

10

di/dt = 50 A/µsVGS = 0 V

Qg - Gate Charge - nC

VD

S -

Dra

in to

Sou

rce

Vol

tage

- V

0 2010 30 40

600

400

200

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

16

14

12

10

8

6

4

2

0

ID = 6 A

VGSVDD = 450 V300 V120 V

VDS


2SK3115

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

100 µ 1 m 10 m

100

L - Inductive Load - H

IAS -

Sin

gle

Ava

lanc

he C

urre

nt -

A

1.0

10

0.110 µ

RG = 25 ΩVDD = 150 VVGS = 20 → 0 VStarting Tch = 25˚C

EAS = 24 mJ

IAS = 6 A

SINGLE AVALANCHE ENERGYDERATING FACTOR

75 150125

120

100

80

60

40

20

0

Starting Tch - Starting Channel Temperature - ˚C

Ene

rgy

Der

atin

g F

acto

r -

%

50 10025

VDD = 150 VRG = 25 ΩVGS = 20 → 0 VIAS ≤ 6 A

PACKAGE DRAWING (Unit: mm)

10.0 ± 0.33.2 ± 0.2φ

4.5 ± 0.2

2.7 ± 0.2

2.5 ± 0.1

0.65 ± 0.11.5 ± 0.22.54

1.3 ± 0.2

2.54

0.7 ± 0.1

4 ±

0.2

15.0

± 0

.3

12.0

± 0

.2

3 ±

0.1

1 2 3

1.Gate2.Drain3.Source

13.5

MIN

.

Isolated TO-220(MP-45F)

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly

dissipate it once, when it has occurred.

EQUIVALENT CIRCUIT

BodyDiode

Source (S)

Drain (D)

Gate (G)


2SK3115

[MEMO]

2SK3115

M8E 00. 4

The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

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2sk3115

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