2SK2769-01MR N-channel MOS-FETFAP-IIS Series 900V 5,5W 3,5A 40W

> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated

> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier

> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V DS 900 VContinous Drain Current I D 3,5 APulsed Drain Current I D(puls) 14 AGate-Source-Voltage V GS 30 VRepetitive or Non-Repetitive (Tch 150C) I AR 3,5 AAvalanche Energy E AS 111 mJMax. Power Dissipation P D 40 WOperating and Storage Temperature Range T ch 150 C

T stg -55 ~ +150 C

- Electrical Characteristics (TC=25C), unless otherwise specifiedItem Symbol Test conditions Min. Typ. Max. UnitDrain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 900 VGate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 3,5 4,0 4,5 VZero Gate Voltage Drain Current I DSS VDS=900V Tch=25C 10 500 A

VGS=0V Tch=125C 0,2 1,0 mAGate Source Leakage Current I GSS VGS=30V VDS=0V 10 100 nADrain Source On-State Resistance R DS(on) ID=2A VGS=10V 4 5,5 WForward Transconductance g fs ID=2A VDS=25V 2 SInput Capacitance C iss VDS=25V 450 pFOutput Capacitance C oss VGS=0V 75 pFReverse Transfer Capacitance C rss f=1MHz 40 pFTurn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 20 ns

t r ID=7A 40 nsTurn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 50 ns

t f RGS=10 W 25 nsAvalanche Capability I AV L = 100H Tch=25C 3,5 ADiode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25C 1 VReverse Recovery Time t rr IF=IDR VGS=0V 500 nsReverse Recovery Charge Q rr -dIF/dt=100A/s Tch=25C 3 C

- Thermal CharacteristicsItem Symbol Test conditions Min. Typ. Max. UnitThermal Resistance R th(ch-a) channel to air 62,5 C/W

R th(ch-c) channel to case 3,125 C/W

Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

N-channel MOS-FET 2SK2769-01MR900V 5,5W 3,5A 40W FAP-IIS Series

> CharacteristicsTypical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics

ID=f(VDS); 80s pulse test; TC=25C

RDS(on) = f(Tch); ID=2A; VGS=10V

ID=f(VGS); 80s pulse test;VDS=25V; Tch=25C

I D [

A]

1

RD

S(O

N) [

W]

2

I D [

A]

3

VDS [V] Tch [C] VGS [V]

Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch

RDS(on)=f(ID); 80s pulse test; TC=25C

gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C

VGS(th)=f(Tch); ID=1mA; VDS=VGS

RD

S(O

N) [

W]

4

g fs [

S]

5

VG

S(t

h) [

V]

6

ID [A] ID [A] Tch [C]

Typical Capacitances vs. VDS Avalanche Energy Derating Forward Characteristics of Reverse Diode

C=f(VDS); VGS=0V; f=1MHz

Eas=f(starting Tch); VCC=90V; IAV=3,5A

IF=f(VSD); 80s pulse test; VGS=0V

C [

F] 7

Eas

[mJ] 8

I F [

A]

9

VDS [V] Starting Tch [C] VSD [V]

Allowable Power Dissipation vs. TC Safe Operation AreaPD=f(Tc) ID=f(VDS): D=0,01, Tc=25C

Zth

(ch-c

) [K

/W]

Transient Thermal impedance

10 12Zthch=f(t) parameter:D=t/T

PD [

W]

I D [

A]

Tc [C] VDS [V] t [s]

This specification is subject to change without notice!