2sd1267

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Power Transistors

285

2SD1267, 2SD1267A

Silicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB0942 and 2SB0942A

Features

High forward current transfer ratio hFEwhich has satisfactory

linearity

Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one

screw

Absolute Maximum Ratings TC=25C

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

Unit: mm

Electrical Characteristics TC=25C

Parameter Symbol Rating Unit

Collector to base 2SD1267 VCBO 60 V

voltage 2SD1267A 80

Collector to 2SD1267 VCEO 60 V

emitter voltage 2SD1267A 80

Emitter to base voltage VEBO 5 V

Peak collector current ICP 8 A

Collector current IC 4 A

Collector power TC= 25C PC 40 W

dissipation Ta= 25C 2

Junction temperature Tj 150 C

Storage temperature Tstg 55 to +150 C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff 2SD1267 ICES VCB= 60 V, VBE= 0 400 A

current 2SD1267A VCB= 80 V, VBE= 0 400

Collector cutoff 2SD1267 ICEO VCE= 30 V, IB= 0 700 A

current 2SD1267A VCE= 60 V, IB= 0 700

Emitter cutoff current IEBO VEB= 5 V, IC= 0 1 mA

Collector to emitter 2SD1267 VCEO IC= 30 mA, IB= 0 60 V

voltage 2SD1267A 80

Forward current transfer ratio hFE1* VCE= 4 V, IC= 1 A 70 250

hFE2 VCE= 4 V, IC= 3 A 15

Base to emitter voltage VBE VCE= 4 V, IC= 3 A 2 V

Collector to emitter saturation voltage VCE(sat) IC= 4 A, IB= 0.4 A 1.5 V

Transition frequency f T VCE= 5 V, IC= 0.5 A, f = 1 MHz 20 MHz

Turn-on time ton IC= 4 A, IB1= 0.4 A, IB2= 0.4 A, 0.4 s

Storage time tstg VCC= 50 V 1.5 s

Fall time tf 0.5 s

Note) *: Rank classification

Rank Q P

hFE1 70 to 150 120 to 250

10.00.2

5.50.2

7.5

0.2

16

.7

0.3

0.7

0.1

14

.0

0.5

So

lder

Dip

(4.0

)

0.5+0.20.1

1.40.11.30.2

0.80.1

2.540.3

5.080.5

21 3

2.70.2

4.20.2

4.2

0.2

3.10.1

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Power Transistors

286

2SD1267, 2SD1267A

VCE(sat)IC hFEIC fTIC

PCTa ICVCE ICVBE

Area of safe operation (ASO) Rth(t)t

0 16040 12080 14020 100600

50

40

30

20

10

(1) TC=Ta

(2) With a 100 100 2mmAl heat sink

(3) With a 50 50 2mmAl heat sink

(4) Without heat sink(PC=2W)

(1)

(2)

(3)

(4)

Ambient temperature Ta (C)

Co

llec

torpower

diss

ipa

tion

PC

(W)

0 20164 1280

6

5

4

3

2

1

IB=150mA

TC=25C

100mA

80mA

60mA

40mA

30mA

20mA

10mA

5mA

Collector to emitter voltage VCE (V)

Co

llec

torcurren

tIC

(A)

0 2.42.01.60.4 1.20.80

8

6

2

5

7

4

1

3

VCE=4V

TC=100C

25C

25C

Base to emitter voltage VBE (V)

Co

llec

torcurren

tIC

(A)

0.01 0.1 1 100.03 0.3 30.01

0.03

0.1

0.3

1

3

10

30

100IC/IB=10

TC=100C

25C25C

Collector current IC (A)

Collectortoemittersaturationvoltage

VCE(sa

t)

(V)

0.01 0.1 1 100.03 0.3 31

3

10

30

100

300

1000

3000

10000

VCE=4V

TC=100C25C

25C


For

wardcurren

ttrans

ferra

tio

hFE

0.01 0.1 1 100.03 0.3 31

3

10

30

100

300

1000

3000

10000

VCE=10Vf=1MHzTC=25C


Tr

ans

ition

frequency

fT

(MHz

)

1 10 100 10003 30 3000.01

0.03

0.1

0.3

1

3

10

30

100Non repetitive pulseTC=25C

ICP

IC

10ms

DC

t=1ms

2SD1267

2SD1267A

Collector to emitter voltage VCE (V)

Co

llec

torcurren

tIC

(A)

104 10103 101102 1 103102 104102

101

1

10

103

102

(1) Without heat sink(2) With a 100 100 2mm Al heat sink

(1)

(2)

Time t (s)

Therma

lres

istance

Rth

(t)(C/W)

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