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Power Transistors

1Publication date: March 2003 SJD00104AED

2SC3496, 2SC3496ASilicon NPN triple diffusion planar type

For power switching

Features High-speed switching High collector-base voltage (Emitter open) V CBO Satisfactory linearity of forward current transfer ratio h FE N type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

Absolute Maximum Ratings TC = 25C

Electrical Characteristics TC = 25C 3C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter Symbol Rating Unit

Collector-base voltage 2SC3496 V CBO 900 V

(Emitter open) 2SC3496A 1 000

Collector-emitter voltage 2SC3496 V CES 900 V

(E-B short) 2SC3496A 1 000

Collector-emitter voltage 2SC3496 V CEO 800 V

(Base open) 2SC3496A 900

Emitter-base voltage (Collector open) V EBO 7 V

Base current I B 0.3 A

Collector current I C 1 A

Peak collector current I CP 2 ACollector power P C 30 W

dissipation T a = 25C 1.3

Junction temperature T j 150 C

Storage temperature T stg 55 to +150 C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage 2SC3496 V CEO IC = 1 mA, I B = 0 800 V

(Base open) 2SC3496A 900

Collector-base cutoff current 2SC3496 I CBO VCB = 900 V, I E = 0 50 A

(Emitter open) 2SC3496A V CB = 1 000 V, I E = 0 50

Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, I C = 0 50 A

Forward current transfer ratio h FE1 VCE = 5 V, I C = 0.05 A 6

hFE2 VCE = 5 V, I C = 0.5 A 3

Collector-emitter saturation voltage V CE(sat) IC = 0.2 A, I B = 0.04 A 1.5 V

Base-emitter saturation voltage V BE(sat) IC = 0.2 A, I B = 0.04 A 1.0 V

Transition frequency f T VCE = 10 V, I C = 0.05 A, f = 1 MHz 4 MHz

Turn-on time t on IC = 0.2 A 1.0 s

Storage time t stg IB1 = 0.04 A, I B2 = 0.08 A 3.0 s

Fall time t f VCC = 250 V 1.0 s

8.5 0.2 3.4 0.3

1.0 0.1

0 to 0.4

6.0 0.2

0.8 0.1 R = 0.5R = 0.5

1.0 0.10.4 0.1

(8.5)

(6.5)

(6.0) 1.3

( 1 . 5

)

( 7 . 6

)

2.54 0.31.4 0.15.08 0.5

1 2 3

1 . 5

0

. 1

2 . 0

0

. 5

1 0

. 0 0

. 3

1 . 5

+ 0

0

. 4

3 . 0

+ 0

. 4

0

. 2

4 . 4

0

. 5

4 . 4

0

. 5

1 4

. 4 0

. 5

1: Base2: Collector3: Emitter

N-G1 Package

Note) Self-supported type package is also prepared.

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2SC3496, 2SC3496A

2 SJD00104AED

PC Ta IC VCE VCE(sat) IC

VBE(sat) IC hFE IC f T IC

ton , t stg , t f IC Safe operation area

0 16040 120800

10

20

30

40

50

C o l

l e c t o r p o w e r

d i s s

i p a t i o n

P C ( W )

Ambient temperature T a ( C)

(1)T C=Ta(2)With a 50 50 2mm

Al heat sink (3)Without heat sink

(PC=1.3W)

(1)

(3)

(2)

00 122 104 86

1.2

1.0

0.8

0.6

0.4

0.2

C o l

l e c t o r c u r r e n

t I C

( A )

Collector-emitter voltage V CE (V)

TC=25C

90mA80mA70mA60mA50mA

40mA30mA

20mA

10mA

100mA

IB=200mA

0.01 0.1 10.01

0.1

1

C o l

l e c t o r - e m

i t t e r s a

t u r a

t i o n v o l

t a g e

V C E ( s a

t ) ( V )

Collector current I C (A)

IC /IB=5

25C

25C

TC=100C

0.010.01

0.1

1

0.1 1

B a s e - e m i

t t e r s a t u r a t

i o n v o

l t a g e

V B E ( s a t

) ( V )

Collector current I C (A)

IC /IB=5

TC=25C

25C

100C

0.01 10.10.1

1

10

100

F o r w a r

d c u r r e n

t t r a n s

f e r r a t

i o h F

E

Collector current I C (A)

VCE=5V

TC=100C25C

25C

0.001 0.01 0.1 10.1

1

10

100

1 000

T r a n s

i t i o n

f r e q u e n c y

f T ( M H z )

Collector current I C (A)

VCE=10Vf=1MHzTC=25C

0.01

0.1

1

10

100

0 1.00.80.60.40.2 T u r n - o n

t i m e

t o n , S

t o r a g e

t i m e

t s t g , F

a l l t i m e

t f ( s )

Collector current IC

(A)

Pulsed t w=1msDuty cycle=1%

IC /IB=5(2I B1=IB2)

VCC=250VTC=25C

tstg

tf ton

0.0011

0.01

0.1

1

10

10 100 1000

C o l

l e c t o r c u r r e n

t I C ( A )

Collector-emitter voltage VCE

(V)

Non repetitive pulseTC=25C

ICP

IC

2 S C 3 4 9 6

2 S C 3 4 9 6 A

t=10ms

300ms

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2SC3496, 2SC3496A

3SJD00104AED

Safe operation area (Reverse bias) Safe operation area (Reverse bias) measurement circuit

Rth t

L

ICI B1

V IN

tw

I B2

V CLAMP

V CC

T.U.T

0

1

3

2

4

0 1600400 1200800

C o l

l e c t o r c u r r e n

t I C

( A )

Collector-emitter voltage V CE (V)

ICP

IC

L=100HIC /IB=5(2IB1=IB2)TC=125C

10 4 10 3 10410310210110 110 210 2

10 1

1

10

102

Time t (s)

T h e r m a l r e s i s t a n c e

R t h

( C / W )

(1)Without heat sink (2)With a 50 50 2mm Al heat sink

(1)

(2)

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Request for your special attention and precautions in using the technical informationand semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Governmentif any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" is to be exported or taken out of Japan.

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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of theproduct or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-ments and household appliances).Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality andreliability are required, or if the failure or malfunction of the products may directly jeopardize life orharm the human body.

Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change withoutnotice for modification and/or improvement. At the final stage of your design, purchasing, or use ofthe products, therefore, ask for the most up-to-date Product Standards in advance to make sure thatthe latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration ofincidence of break down and failure mode, possible to occur to semiconductor products. Measureson the systems such as redundant design, arresting the spread of fire or preventing glitch arerecommended in order to prevent physical injury, fire, social damages, for example, by using theproducts.

(7) When using products for which damp-proof packing is required, observe the conditions (includingshelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL