2sb1375_datasheet_en_20061121
TRANSCRIPT
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375 Audio Frequency Power Amplifier
Low saturation voltage: V CE (sat) = 1.5 V (max)(IC = 2 A, IB = 0.2 A)
High power dissipation: P C = 25 W (Tc = 25C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012
Absolute Maximum Ratings (Tc = 25C)
Characteristics Symbol Rating Unit
Collector-base voltage V CBO 60 V
Collector-emitter voltage V CEO 60 V
Emitter-base voltage V EBO 7 V
Collector current I C 3 A
Base current I B 0.5 A
Ta = 25C 2.0Collector powerdissipation Tc = 25C
P C 25
W
Junction temperature T j 150 C
Storage temperature range T stg 55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product todecrease in the reliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
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Electrical Characteristics (Tc = 25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I CBO VCB = 60 V, I E = 0 10 A
Emitter cut-off current I EBO VEB = 7 V, I C = 0 10 A
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, I B = 0 60 VhFE (1) VCE = 5 V, I C = 0.5 A 100 320
DC current gainhFE (2) VCE = 5 V, I C = 2 A 15
Collector-emitter saturation voltage V CE (sat) IC = 2 A, I B = 0.2 A 1.0 1.5 V
Base-emitter voltage V BE VCE = 5 V, I C = 0.5 A 0.75 1.0 V
Transition frequency f T VCE = 5 V, I C = 0.5 A 9 MHz
Collector output capacitance C ob VCB = 10 V, I E = 0, f = 1 MHz 50 pF
Marking
Lot No.
A line indicateslead (Pb)-free package orlead (Pb)-free finish.
B1375 Part No. (or abbreviation code)
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C o l l e c
t o r c u r r e n t
I C
( A )
Collector-emitter voltage V CE (V)
IC V CE
C o l
l e c t o r c u r r e n
t I C
( A )
Collector current I C (A)
hFE I C
D C c u r r e n
t g a i n
h F E
Collector current I C (A)
VCE (sat) I C
C o l
l e c t o r - e m
i t t e r s a
t u r a
t i o n v o
l t a g e
V C E ( s a t
) ( V )
Base-emitter voltage V BE (V)
IC V BE
00
Common emitter
Tc = 25C
3.0
0.5
2.0
3 4 6 5
30
100
50
70
90
20
IB = 10 mA
60
80
2 1
1.0
1.5
2.5
40
Common emitter
VCE = 5 V
0
3
2
0.8 1.2 2.0
Tc = 100C
25
1.6 0.40
1
25
Tc = 100C
Common emitter
IC/IB = 10
2
0.05
0.1
0.3
0.5
1
0.03
0.03 0.1 1 5 3 0.3 0.01
25
25
0.01
0.03
100
Common emitter
VCE = 5 V30
50
500
0.1 1 5
25
25Tc = 100C
3 0.3 0.01
300
20
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C o l
l e c t o r p o w e r
d i s s
i p a t
i o n
P C
( W )
Collector-emitter voltage V CE (V)
Safe Operating Area
C o l l e c t o r c u r r e n
t I C
( A )
Ambient temperature Ta (C)
P C Ta
1 3 0.1
0.3
0.5
1
3
IC max (pulsed) *
IC max (continuous)
DC operationTc = 25C
10 ms *
100 ms *
50 100
10
* : Single nonrepetitivepulse Tc = 25C
Curves must be deratedlinearly with increase intemperature.
1 ms *
VCEO max
5
200 5 10 30 00
5
(1) Tc = TaInfinite heat sink
(2) No heat sink
15
25 50 75 100 125 175150
10
20
25
(1)
(2)
Pulse width t w (s)
r th t w
T r a n s i e n
t t h e r m a l r e s i s t a n c e
r t h ( C / W )
0.001 0.01 0.1 100101
100
3
30
10
1
0.3
(1) Ta = 25C No heat sink
(2) Tc = 25C Infinite heat sink(1)
(2)
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RESTRICTIONS ON PRODUCT USE20070701-EN
The information contained herein is subject to change without notice.
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