2sb1375_datasheet_en_20061121

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  • 8/12/2019 2SB1375_datasheet_en_20061121

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    2SB1375

    2006-11-211

    TOSHIBA Transistor Silicon PNP Triple Diffused Type

    2SB1375 Audio Frequency Power Amplifier

    Low saturation voltage: V CE (sat) = 1.5 V (max)(IC = 2 A, IB = 0.2 A)

    High power dissipation: P C = 25 W (Tc = 25C) Collector metal (fin) is covered with mold resin Complementary to 2SD2012

    Absolute Maximum Ratings (Tc = 25C)

    Characteristics Symbol Rating Unit

    Collector-base voltage V CBO 60 V

    Collector-emitter voltage V CEO 60 V

    Emitter-base voltage V EBO 7 V

    Collector current I C 3 A

    Base current I B 0.5 A

    Ta = 25C 2.0Collector powerdissipation Tc = 25C

    P C 25

    W

    Junction temperature T j 150 C

    Storage temperature range T stg 55 to 150 C

    Note: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product todecrease in the reliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).

    Unit: mm

    JEDEC

    JEITA

    TOSHIBA 2-10R1A

    Weight: 1.7 g (typ.)

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    2006-11-212

    Electrical Characteristics (Tc = 25C)

    Characteristics Symbol Test Condition Min Typ. Max Unit

    Collector cut-off current I CBO VCB = 60 V, I E = 0 10 A

    Emitter cut-off current I EBO VEB = 7 V, I C = 0 10 A

    Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, I B = 0 60 VhFE (1) VCE = 5 V, I C = 0.5 A 100 320

    DC current gainhFE (2) VCE = 5 V, I C = 2 A 15

    Collector-emitter saturation voltage V CE (sat) IC = 2 A, I B = 0.2 A 1.0 1.5 V

    Base-emitter voltage V BE VCE = 5 V, I C = 0.5 A 0.75 1.0 V

    Transition frequency f T VCE = 5 V, I C = 0.5 A 9 MHz

    Collector output capacitance C ob VCB = 10 V, I E = 0, f = 1 MHz 50 pF

    Marking

    Lot No.

    A line indicateslead (Pb)-free package orlead (Pb)-free finish.

    B1375 Part No. (or abbreviation code)

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    2SB1375

    2006-11-213

    C o l l e c

    t o r c u r r e n t

    I C

    ( A )

    Collector-emitter voltage V CE (V)

    IC V CE

    C o l

    l e c t o r c u r r e n

    t I C

    ( A )

    Collector current I C (A)

    hFE I C

    D C c u r r e n

    t g a i n

    h F E

    Collector current I C (A)

    VCE (sat) I C

    C o l

    l e c t o r - e m

    i t t e r s a

    t u r a

    t i o n v o

    l t a g e

    V C E ( s a t

    ) ( V )

    Base-emitter voltage V BE (V)

    IC V BE

    00

    Common emitter

    Tc = 25C

    3.0

    0.5

    2.0

    3 4 6 5

    30

    100

    50

    70

    90

    20

    IB = 10 mA

    60

    80

    2 1

    1.0

    1.5

    2.5

    40

    Common emitter

    VCE = 5 V

    0

    3

    2

    0.8 1.2 2.0

    Tc = 100C

    25

    1.6 0.40

    1

    25

    Tc = 100C

    Common emitter

    IC/IB = 10

    2

    0.05

    0.1

    0.3

    0.5

    1

    0.03

    0.03 0.1 1 5 3 0.3 0.01

    25

    25

    0.01

    0.03

    100

    Common emitter

    VCE = 5 V30

    50

    500

    0.1 1 5

    25

    25Tc = 100C

    3 0.3 0.01

    300

    20

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    C o l

    l e c t o r p o w e r

    d i s s

    i p a t

    i o n

    P C

    ( W )

    Collector-emitter voltage V CE (V)

    Safe Operating Area

    C o l l e c t o r c u r r e n

    t I C

    ( A )

    Ambient temperature Ta (C)

    P C Ta

    1 3 0.1

    0.3

    0.5

    1

    3

    IC max (pulsed) *

    IC max (continuous)

    DC operationTc = 25C

    10 ms *

    100 ms *

    50 100

    10

    * : Single nonrepetitivepulse Tc = 25C

    Curves must be deratedlinearly with increase intemperature.

    1 ms *

    VCEO max

    5

    200 5 10 30 00

    5

    (1) Tc = TaInfinite heat sink

    (2) No heat sink

    15

    25 50 75 100 125 175150

    10

    20

    25

    (1)

    (2)

    Pulse width t w (s)

    r th t w

    T r a n s i e n

    t t h e r m a l r e s i s t a n c e

    r t h ( C / W )

    0.001 0.01 0.1 100101

    100

    3

    30

    10

    1

    0.3

    (1) Ta = 25C No heat sink

    (2) Tc = 25C Infinite heat sink(1)

    (2)

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    2SB1375

    2006-11-215

    RESTRICTIONS ON PRODUCT USE20070701-EN

    The information contained herein is subject to change without notice.

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductordevices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

    safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges asset forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor ReliabilityHandbook etc.

    The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requiresextraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

    medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in hisdocument shall be made at the customers own risk.

    The products described in this document shall not be used or embedded to any downstream products of whichmanufacture, use and/or sale are prohibited under any applicable laws and regulations.

    The information contained herein is presented only as a guide for the applications of our products. Noresponsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties whichmay result from its use. No license is granted by implication or otherwise under any patents or other rights ofTOSHIBA or the third parties.

    Please contact your sales representative for product-by-product details in this document regarding RoHScompatibility. Please use these products in this document in compliance with all applicable laws and regulationsthat regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

    occurring as a result of noncompliance with applicable laws and regulations.