2n5486

2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

2N54842N54852N5486

MMBF5484MMBF5485MMBF5486

N-Channel RF Amplifier

This device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value UnitsVDG Drain-Gate Voltage 25 V

VGS Gate-Source Voltage - 25 V

IGF Forward Gate Current 10 mA

TJ ,Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

GS D

TO-92SOT-23

Mark: 6B / 6M / 6H

G

S

D

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units2N5484 *MMBF5484

PD Total Device DissipationDerate above 25°C

3502.8

2251.8

mWmW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Discrete POWER & SignalTechnologies

ã 1997 Fairchild Semiconductor Corporation

2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test C onditions Min Typ Max Units

ON CHARACTERISTICS

V(BR)GSS Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 25 V

IGSS Gate Reverse Current VGS = - 20 V, VDS = 0VGS = - 20 V, VDS = 0, TA = 100°C

- 1.0- 0.2

nAµA

VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 2N54842N54852N5486

- 0.3- 0.5- 2.0

- 3.0- 4.0- 6.0

VVV

IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N54842N54852N5486

1.04.08.0

5.01020

mAmAmA

SMALL SIGNAL CHARACTERISTICSgfs Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz

2N54842N54852N5486

300035004000

600070008000

µmhosµmhosµmhos

Re(yis) Input Conductance VDS = 15, VGS = 0, f = 100 MHz2N5484

VDS = 15, VGS = 0, f = 400 MHz2N5485 / 2N5486

100

1000

µmhos

µmhosgos Output Conductance VDS = 15, VGS = 0, f = 1.0 kHz

2N54842N54852N5486

506075

µmhosµmhosµmhos

Re(yos) Output Conductance VDS = 15, VGS = 0, f = 100 MHz2N5484

VDS = 15, VGS = 0, f = 400 MHz2N5485 / 2N5486

75

100

µmhos

µmhosRe(yfs) Forward Transconductance VDS = 15, VGS = 0, f = 100 MHz

2N5484VDS = 15, VGS = 0, f = 400 MHz

2N54852N5486

2500

30003500

µmhos

µmhosµmhos

Ciss Input Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 5.0 pF

Crss Reverse Transfer Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 1.0 pF

Coss Output Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 2.0 pF

NF Noise Figure VDS= 15 V, RG = 1.0 kΩ, f = 100 MHz 2N5484VDS= 15 V, RG = 1.0 kΩ, f = 400 MHz 2N5484VDS= 15 V , RG = 1.0 kΩ, f = 100 MHz 2N5485 / 2N5486VDS= 15 V, RG = 1.0 kΩ, f = 400 MHz 2N5485 / 2N5486

4.0

3.0

2.0

4.0

dB

dB

dB

dB

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%

N-Channel RF Amplifier(continued)

2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

Typical Characteristics

°°°°°

Transfer Characteristics

-5-4-3-2-100

4

8

12

16

20

V - GATE-SOURCE VOLTAGE(V)

I -

DR

AIN

CU

RR

EN

T (

mA

)D

GS(OFF)V = -4.5V V = 15VDS

T = +25 CA

O

-2.5 V

T = -55 CO

A

T = +125 CA

O

T = -55 CO

A

T = +25 CA

O

T = +125 CA

O

GS

Channel Resistance vs Temperature

-50 0 50 100 15010

20

30

50

100

200

300

500

1000

T - AMBIENT TEMPERATURE ( C)

r

- D

RA

IN O

N R

ES

ISTA

NC

E (

)Ω

V = -1.0VGS(OFF)

-2.5 V

-5.0V

-8.0 V

V = 100mVDS

V = 0 VGS

DS

A

TransconductanceCharacteristics

-5-4-3-2-100

1

2

3

4

5

6

7


gfs

-- T

RA

NS

CO

ND

UC

TAN

CE

(m

mho

s)

V = -4.5VGS(OFF)

V = 15VDS

T = +25 CA

O

-2.5 V

T = -55 CO

A

T = +125 CA

O

T = -55 CO

A

T = +25 CA

O

T = +125 CA

O

GS

Common Drain-SourceCharacteristics

0 0.2 0.4 0.6 0.8 10

1

2

3

4

5

V - DRAIN-SOURCE VOLTAGE(V)

I -

- D

RA

IN C

UR

RE

NT

(m

A)

V

= 0V

GS-2.5V

DS

-0.5V

-4.0V

-2.0V

-1.0V

-3.5V

-3.0V

-1.5VT = +25 C

AO

TYP V = -5.0VGS(OFF)

D

TransconductanceParameter Interactions

1 2 3 5 7 1010

20

1

23

5

10

2030

50

100


r

--

DR

AIN

"O

N"

RE

SIS

TAN

CE

(

)

gfs

---

TR

AN

SC

ON

DU

CTA

NC

E (

mm

hos

)

GS

I

--

DR

AIN

CU

RR

EN

T (

mA

)D

SS

DS

Ω gfs, I @ V = 15 V, V = 0 PULSEGSDSDSS

r @ V = 100mV, V = 0GSDSDS

V @ V = 15V, I = 1nAGS(OFF) GS D

- -----

Output Conductance vsDrain Current

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 100.1

0.5

1

5

10

20

I -- DRAIN CURRENT (mA)

gos

-- O

UT

PU

T C

ON

DU

CTA

NC

E (

u m

hos)

D

1510

T = +25 CA

O

f = 1.0 kHz

15105

20

15V10V

5.0V

20V

20

V = 5vDG

V = -5.5VGS(OFF)

V = -3.5VGS(OFF)

V = -1.5VGS(OFF)


2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

Transconductance vsDrain Current

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 100.1

0.5

1

5

10

I - DRAIN CURRENT (mA)

gfs

-- T

RA

NS

CO

ND

UC

TAN

CE

(m

mho

s)

D

GSV = - 5VGS(OFF)

GSV = - 1.5VGS(OFF)

T = -55 CO

A

T = +25 CA

O

T = +125 CA

O

T = -55 CO

A

T = +25 CA

O

T = +125 CA

O

V = 15V

f = 1.0 kHz

DG

Noise Voltage vs Frequency

0.01 0.03 0.1 0.3 1 3 10 30 1001

5

10

f -- FREQUENCY (kHz)

e -

NO

ISE

VO

LTA

GE

( n

V/

Hz

)

V = 15VDG

BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz

I = 0.5 mAD

I = 3 mADn

Capacitance vs Voltage

-20-15-10-50

1

5

10

V -- GATE-SOURCE VOLTAGE(V)

C

( C

) --

CA

PAC

ITA

NC

E (p

F)

GS

isrs

C ( V = 0 V)

C ( V = 15 V)C ( V = 15 V)DS

DS

is

rs

f = 0.1 - 1.0 MHz

Noise Figure Frequency

10 20 30 50 100 200 300 500 10000

1

2

3

4

5

f -- FREQUENCY (MHz)

NF

--

NO

ISE

FIG

UR

E (

dB)

V = 15VDS

I = 5.0 mA

R = 1.0 k T = +25 C

AO

Ω

D

g


SOT-23 TO-92

Typical Characteristics (continued)

2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

Common Source Characteristics

Input Admittance

100 200 300 500 700 1000

1

5

10


Y

--

INP

UT

AD

MIT

TAN

CE

(m

mho

s) V = 15VV = 0GS

DS

(CS)

g iss

iss

b iss

Output Admittance

100 200 300 500 700 1000

1


Y

--

OU

TP

UT

CO

ND

UC

TAN

CE

(m

mho

s)

V = 15VV = 0GS

DS

(CS)

OS

S

b (x 10)OSS

gOSS

Forward Transadmittance

100 200 300 500 700 1000

1

5

10


Y

--

FO

RW

AR

D T

RA

NS

FE

R (

mm

hos)

V = 15VV = 0GS

DS

(CS)

-b fss

fss

+gfss

Reverse Transadmittance

100 200 300 500 700 1000

1

5

10


Y

--

RE

VE

RS

E T

RA

NS

FE

R (

mm

hos)

rss

V = 15VV = 0GS

DS

(CS)

- b

-g ( X 0.1)rss

rss


2N5484 / 2N

5485 / 2N5486 / M

MB

F5484 / M

MB

F5485 / M

MB

F5486

Common Gate Characteristics


Input Admittance

100 200 300 500 700 10001

5

10


Y

--

INP

UT

AD

MIT

TAN

CE

(m

mho

s) V = 15VV = 0GS

DS

(CG)

g igs

igs

b igs

Forward Transadmittance

100 200 300 500 700 1000

1

5

10


Y

--

FO

RW

AR

D T

RA

NS

FE

R (

mm

hos)

V = 15VV = 0GS

DS

(CG)

-b fgs

fgs

+gfgs

Reverse Transadmittance

100 200 300 500 700 1000

1


Y

--

RE

VE

RS

E T

RA

NS

FE

R (

mm

hos)

rgs

V = 15VV = 0GS

DS

(CG) grgs

- b rgs

Output Admittance

100 200 300 500 700 1000

1


Y

--

OU

TP

UT

CO

ND

UC

TAN

CE

(m

mho

s)

V = 15VV = 0GS

DS

(CG)

ogs

b (x 10)OgS

gOgs

TRADEMARKS

ACEx™CoolFET™CROSSVOLT™E2CMOSTM

FACT™FACT Quiet Series™FAST®

FASTr™GTO™HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

2n5486

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