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Reporters : Meng-Chia Hsieh

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Introduction

1. Kesterite Structure (similar to CIGS Chalcopyrite)

2. Direct band gap energy (1.01.! e") by tuning S#Se ratio

$. %o& cost (abundant ' economical elements) replace In and Ga

SLG : Substrate

CdS / ZnS : Buffer layer (50nm)

ITO : Wind! layer (0"#$%"um)

&': *nti refle+tin' layer

(%%0nm)

CZTS : *bsrber layer (%"5$ um)

,i/*l : rnt +nta+t

& : Ba+- +nta+t (0"#$% um)

i.ZnO : Buffer layer (50nm)

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I*+

depo.

Sputter

C,-eaporation

C*/S precursor

i-*n, (0nm) depo.

I/, (200nm) depo.

-Sputter

ExperimentalExperimental

3a deposition

Sul4uri5ation

I*+ yttria-stabili5ed 5irconia

Sul4uri5ation

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Starting3a

thic6ness

+ercent o4total sodium4ound at the

sur4ace

Concentration o43a in C*/S 4i lm

region (appro7.)

1 nm 8.9: $.; < 1018cm=$

>.! nm 8.9: 1.0 < 101;cm=$

2$ nm $$.2: 2.0 < 101;cm=$

SIMSSIMS

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XPSXPS

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SEMSEM

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Sample?ain region 2

(;!@190 K)Ame"B

?ain region $

(18!@2!0 K)Ame"B

3o sodium 2> 10

1 nm 3a 2! 9

>.! nm 3a 28 2;

2$ nm 3a 2$ 2>

Extracted activation energies

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Conclusion