Mixed Signal & RF Technology

Mixed Signal/RF Technology

Overview TSMC provides the most robust logic-compatible mixed-signal/RF technology portfolio and has shipped large volumes of mixed-signal/RF wafers serving a myriad of applications for hundreds of communication, computer, and consumer products.

CMOS processes technologies run from 0.50-micron to 40nm standard CMOS for high-precision ADC chips and complex single cellular System-on-Chip (SoC) devices. More and more RF products are now designed for CMOS technology since CMOS switching speed climbs higher with each progressively smaller geometry.

Accurate SPICE models reduce design barriers and achieve first-time silicon success. TSMC's process design kits (PDKs) include flexible and complete pcells, accurate modeling, and a comprehensive set of technology files to simplify the design process.

Mixed-Signal/RF TechnologyTSMC's mixed-signal/RF technology provides high performance and high precision analog device functions that are coupled with logic density, speed, and power to serve a broad range of advanced technology platform applications. Our technology platforms feature precision, process stability, the largest available manufacturing capacity, and time-to-volume foundry services that are the hallmarks of TSMC's mixed-signal/RF processes.

TSMC's cost-effective CMOS technology generates consistently high manufacturing yields, high performance analog devices, robust passive components, and reliability that are key to sensitive mixed-signal applications.

Designers can add precision capacitors, precision high poly resistors, thick-metal inductors, high quality varactors and diodes that enhance phase-locked loops, clocks, and other components for advanced consumer and communication products. TSMC provides complete characterization reports for design reference. SPICE models and TSMC's PDKs provide the flexibility to design mixed-signal and wireless-related circuits that shorten design time, enhance product performance, and reduce time-to-market.

SiGe BiCMOS CMOS

Available In Planning

Core Device

I/O Device

High R Resistor

MiM

MoM

UTM

HVMOS

Mismatch Report

Analog Fitting Model

RF Model

PDK

(stat Model, noise corner)

0.35μm 0.18μm 0.35μm 0.25μm 0.18μm 0.13μm 90nm 65nm 40nm 28nm0.5μm

TSMC's mixed-signal/RF platform provides the necessary flexibility to meet cost-sensitive and high-precision product requirements. Cost sensitive products can adopt fully logic-compatible devices without increasing mask count. High precision product requirements are met through special precision devices as cost-effective add-ons. TSMC's complete matching characterization reports cover both active and passive devices.

RF applications can take advantage of a thick copper top metal layer for a high-Q inductor. TSMC's optimal device layout and complete characterization information are the foundation of the company's position as the foundry of choice for communication applications.

Accurate SPICE Modeling TSMC SPICE models promote first-time silicon success to shorten time-to-market. The advanced mixed-signal model is synchronized with logic technology. TSMC focuses on analog parameter fitting quality; accuracy is bounded by model equation only. The temperature coefficient, voltage coefficient, mismatch, and noise statistics are monitored to confirm that the model accuracy is in acceptable ranges.

Available

Passive Devices Cost Effective

CapacitorsLogic Compatible Metal InductorResistorsDiodes

Transistors

CMOSBipolarHVMOS

High PrecisionUltra Thick Metal InductorVaractors

Proven Logic Platform

SIPCE Models RFCMOS modelsFlicker noise modelsThermal noise modelsMismatch models

Statistical modelsModel Scalability

Process Design Kit (PDK)ModelsP-cellsEM SimulatorStandard Cells

Standard I/OsLC FinderCustomized devices

CommunicationCellular phone

WiMAXWLAN

Bluetooth

Technolog Device Types Fixed Corner Model

Flicker Noise Model

Mismatch Model

Statistical Model

Flicker Noise Corner RF

Thermal Noise Corner

n/p mos Core_ion mos Native core_ioLogic GatesSRAM Bit Celln mos Varactor Core_ioJunction VaractorsRTMOMP+Poly Resistor w/o SilicideP+Poly Resistor w/i SilicideN-well Resistor Under OD and/or STIOther ResistorsDiodesBJT (PNP & NPN)

MIM

UTM Inductor

Logic Models Mixed-Signal Models in Sub-circuit RF

LO

MS

RFNot Available

ConsumerDTVDVDSTB

Mixed Signal/RF Technology

Process Design KitsTSMC's process design kits (PDKs) are the cornerstone for all mixed-signal/RF designs. We provide the most comprehensive portfolio of enhanced silicon devices to address all mixed-signal/RF design needs. TSMC's PDKs are optimized with layout (pcell) for manufacturing, simulated with accurate SPICE models, checked with thorough technology files, and re-simulated with accurate layout parasitic extraction models. In addition, TSMC partners with industry-leading EDA suppliers to deliver a robust mixed-signal/RF portfolio.

Silicon Germanium BiCMOS TechnologyTSMC's Silicon Germanium BiCMOS technology delivers higher performance, faster time-to-market, lower power consumption, and better manufacturing reliability than Gallium Arsenide or other similar processes. TSMC's Silicon Germanium technology features:

CMOS logic compatibilityComprehensive device offerings and design support including a complete process design kitMulti-generation process geometries, including 0.35-micron and 0.18-micron

Combining the integration and cost benefits of silicon with the speed of more esoteric and expensive technologies makes Silicon Germanium an ideal process for wireless and wired communication applications. Products manufactured on TSMC Silicon Germanium processes demonstrate dramatically improved functionality at a lower cost.

TSMC is the foundry leader because we produce more mixed-signal/RF wafers than anyone else and we possess a comprehensive mixed-signal/RF portfolio of processes and services. From our reliable and cost-effective products to our cutting edge advanced technologies.

Cost Effective Cadence Composer

Time Domain Simulation Cadence/Spectre Synopsys/Hspice Mentor/Eldo

Frequency Domain Simulation Agilent/ADS (Harmonic Balance) GDS II

Design Verification DRC/LVS Cadence/Assura Mentor/Calibre

Parasitic Extraction LPE Cadence/Assura RCX Mentor/Calibre XRC

Layout Edit Parameterized cell Virtuoso - XL/VXL Layout

Editor

ADE

0.18SiGe 0.18SiGe_PA 0.35SiGe

Core

IOCMOS FET

BJT NPN

BJT PNP

1.8

3.3

120

65

35

120

90

60

2.3

3.4

4.8

280

280

280

300

300

300

8

6

35

100

Ft (GHz)

Fmax (GHz)

BVceo

hFE

VA

Ft (GHz)

BVceo

hFE

VA

1.8

3.3

55

40

80

60

3.4

6.5

280

280

300

300

8

6

35

100

3.3

3.3

62

40

25

70

60

40

2.5

3.8

6

155

190

190

300

400

300

HS

ST

HV

HS

ST

HV

HS

ST

HV

HS

ST

HV

HS

ST

HV

ST

ST

ST

ST

Collaborate, innovate and grow with TSMCThe trusted technology and capacity provider

TSMC Headquaters

8, Li-Hsin Rd. 6 Hsinchu Science Park, Hsinchu, Taiwan 300-78

Tel: 886-3-563-6688, Fax: 886-3-563-7000

TSMC North America

2585 Junction Avenue, San Jose, CA 95134, U.S.A.

Tel: 1-408-382-8000, Fax: 1-408-382-8008

TSMC Europe B.V.

World Trade Center (H7), Zuidplein 60 1077 XV, Amsterdam, The Netherlands

Tel: 31-20-305-9900, Fax: 31-20-305-9911

TSMC Japan Limited

21F, Queen’s Tower C, 2-3-5, Minato Mirai, Nishi-Ku, Yokohama, Kanagawa, 220-6221, Japan

Tel: 81-45-682-0670, Fax: 81-45-682-0673

TSMC (China) Company Limited

4000, Wen Xiang Road, Songjiang, Shanghai, China, Postcode: 201616

Tel: 86-21-5776-8000, Fax: 86-21-5776-2525

TSMC Korea Limited

15F, AnnJay Tower, 718-2, Yeoksam-dong, Gangnam-gu, Seoul 135-080, Korea

Tel: 82-2-2051-1688, Fax: 82-2-2051-1669

TSMC India

1st Floor, Pine Valley, Embassy Golf-Links Business Park, Bangalore–560071, India.

Tel: +91-80-4176-8615, Fax: +91-80-4176-4568

2010-6/04.11Information in this document is subject to change without notice. Copyright 2011 Taiwan Semiconductor Manufacturing Company Ltd. All rights reserved. All trademarks are the property of their respective owners.