2009 ieee/semi advanced t of ontents s m upcoming ... · e-mail: [email protected] contributions...

APRIL 2009 VOL. 16, NO. 2 ISSN: 1074 1879 EDITOR-IN-CHIEF: NINOSLAV D. STOJADINOVIC

TABLE OF CONTENTS

Upcoming Technical Meetings . . . . . . . . . . . . . 12009 ASMC • 2009 IITC• 2009 PVSC • 2009 Transducers•

December 2008 AdCom Meeting Summary . . 3Society News . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Humanitarian Technology Challenge – Call for • EDS VolunteersSummary of Changes to the EDS Bylaws• EDS Regions/Chapters Committee Report• 2008 EDS Regions 4–6 Chapters Meeting Summary• 2008 EDS Chapter of the Year Award• Report on the 2nd Annual EDS GOLD Event• Congratulations to Newly Appointed EDS • Regional Newsletter EditorsEDS Distinguished Lecturers Visit Chapters in • Bangladesh and IndiaEDS Distinguished Lecturers Participate in 16th • WIMNACT – ChinaAwards – Preparing a Successful Nomination• 2008 EDS Distinguished Service Award Winner• 2009 EDS Early Career Award Call for • Nominations2008 EDS J.J. Ebers Award Winner• 2009 EDS J.J. Ebers Award Call for Nominations• 2008 EDS Education Award Winner• 2009 EDS Education Award Call for Nominations• Status Report from the 2008 EDS Masters • Student Fellowship WinnersReminder - Deadline for the 2009 EDS Ph.D. • Student Fellowship NominationsCongratulations to 33 EDS Members Elected to • IEEE Grade of Fellow2008 Class of EDS Fellows Honored at IEDM•

Regional and Chapter News . . . . . . . . . . . . . . 26EDS Meetings Calendar . . . . . . . . . . . . . . . . . 34EDS Distinguished Lecturers Visit

the ED Guangzhou Chapter . . . . . . . . . . . . . . 36

The annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2009), a global manufacturing technology fo-rum, marks its 20th anniversary, May 11–13, in Berlin. This year also features a collaboration with ISSM, the International Sym-posium on Semiconductor Manufacturing, which will produce a conference session.

ASMC fills a critical industry need by providing the opportu-nity and the venue for technical managers, engineers, and other semiconductor industry professionals to network, learn, and share knowledge on new and best-method semiconductor manufacturing practices and concepts. With the dynamic nature of the industry, in-formation sharing across sectors is a vital aspect of innovation and continuous improvement.

2009 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING

CONFERENCE (ASMC)

YOUR COMMENTS SOLICITEDYour comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected]

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(continued on page 7)

2 IEEE Electron Devices Society Newsletter ❍ April 2009

ELECTRON DEVICES

SOCIETY

NEWSLETTER

EDITORIAL STAFF

PresidentCor L. ClaeysIMECE-mail: [email protected]

President-ElectRenuka P. JindalUniversity of Louisiana at LafayetteE-mail: [email protected]

TreasurerStephen A. ParkeTennessee Tech UniversityE-mail: [email protected]

SecretaryJames L. MerzUniversity of Notre DameE-mail: [email protected]

Jr. Past PresidentIlesanmi AdesidaUniversity of IllinoisE-mail: [email protected]

Sr. Past PresidentHiroshi IwaiTokyo Institute of TechnologyE-mail: [email protected]

Vice-President of AwardsAlfred U. Mac RaeMac Rae TechnologiesE-mail: [email protected]

Vice-President of Educational ActivitiesPaul K.L. YuUniv. of California at San DiegoE-mail: [email protected]

Vice-President of MeetingsJon J. CandelariaMotorolaE-mail: [email protected]

Vice-President of MembershipAlbert Z.H. WangUniversity of California, RiversideE-mail: [email protected]

Vice-President of PublicationsSamar SahaSilTerraUSA, Inc.E-mail: [email protected]

Vice-President of Regions/ChaptersJuin J. LiouUniversity of Central FloridaE-mail: [email protected]

Vice-President of Technical ActivitiesJoachim N. BurghartzIMS ChipsE-mail: [email protected]

IEEE NewslettersTheresa SmithIEEE Operations CenterE-mail: [email protected]

Executive DirectorWilliam F. Van Der VortIEEE Operations CenterE-mail: [email protected]

Business CoordinatorJoyce LombardiniIEEE Operations CenterE-mail: [email protected]

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2009 Term 2010 Term 2011 Term

S. S. Chung (2) J. N. Burghartz (2) G. Baccarani (2)R. Huang (1) M. J. Chan (2) M. Jamal Deen (2)R. P. Jindal (1) S. Ikeda (2) S. Deleonibus (1)M. Lundstrom (2) R. J. Nikolic (2) F. Guarin (1)H. S. Momose (1) J. J. Wesler (2) S. Saha (1)A. Z. H. Wang (2) T.-L. Ren (1) H. Shang (2)X. Zhou (2) R. M. Todi (1) J. W. Swart (2) P. K. L. Yu (1)

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08855.

Copyright © 2009 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy.

Editor-In-ChiefNinoslav D. StojadinovicUniversity of NisE-mail: [email protected]

REGIONS 1-6, 7 & 9Eastern, Northeastern & South-eastern USA (Regions 1,2 & 3)Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-mail: [email protected]

Central USA & Canada(Regions 4 & 7)Jamal DeenMcMaster UniversityE-mail: [email protected]

Southwestern & Western USA(Regions 5 & 6)Adam M. ConwayLawrence Livermore Nat. Lab.E-mail: [email protected]

Latin America (Region 9)Francisco J. Garcia SanchezUniversity Simon BolivarE-mail: [email protected]

REGION 8Eastern Europe & the former Soviet UnionTomislav SuligojUniversity of ZagrebE-mail: [email protected]

Scandinavia & Central EuropeZygmunt CiotaTechnical University of LodzE-mail: [email protected]

UK, Middle East & AfricaZhirun HuUniversity of ManchesterE-mail: [email protected]

Western EuropeCora SalmUniversity of TwenteE-mail: [email protected]

REGION 10Australia, New Zealand & South AsiaXing ZhouNanyang Technological UniversityE-mail: [email protected]

Northeast AsiaKazuo TsutsuiTokyo Institute of TechnologyE-mail: [email protected]

East AsiaMansun J. ChanHong Kong Univ. of Sc. & Tech.E-mail: [email protected]

CONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Society and its members. Please send your ideas/articles directly to either the Editor-in-Chief or appropriate Editor. The e-mail addresses of these individuals are listed on this page. Whenever possible, e-mail is the preferred form of submission. Newsletter Deadlines

Issue Due Date

January October 1st April January 1st July April 1st October July 1st

The EDS Newsletter archive can be found on the Society web site at https://www.ieee.org/portal/pages/society/eds/pubs/newsletters/newsletter.html. The archive contains issues from July 1994 to the present.

April 2009 ❍ IEEE Electron Devices Society Newsletter 3

The meeting was called to order at 8:15 a.m. by our President, Cor Claeys. The first item on the agen-da was one of the most important actions carried out by AdCom each

year – the acknowledgment of the fine work done by outgoing members and/or officers!

Certificates of Appreciation, awarded by Cor Claeys.

First and foremost is a certificate for a dedicated worker who is step-ping down because he is moving up: Renuka Jindal is leaving the excel-lent job he has done for 7 years as Vice President for Publications, be-cause he has been elected to serve as the next President of the Electron Devices Society!

Other certificates were awarded to: Juin J. (JJ) Liou, VP Regions/Chapters, for his 6 years as an Elected Member, and Jacobus W. Swart, for serving as Region 9 Newsletter Editor; and Cary Yang for his 3 years as Education Awards Chair. Samar Saha, who will be taking over the demanding job of VP Publications vacated by Renuka, was recognized and thanked for his work as: Compact Modeling Chair; SRC Regions 4-6 Chair; IEEE CEDA Representative; and South Western & Western U.S. Newsletter Editor. Fi-nally, active Distinguished Lecturers, Mansun Chang, Steve Chung, and Joachim Burghartz, were recognized for their outstanding work.

President’s Report (continued). Cor Claeys then went on to summa-rize important items from the recent TAB meeting, which included the fact that several new journals have been approved for other IEEE societies, the Laser and Electro-Optics Society (LEOS) has changed its name to the Photonics Society, the technology roadmap has been updated—broaden-ing the technology base of IEEE – both

the framework and the identification of 14 technology sectors, and most importantly for the EDS, there will be a five year review on June 25 of EDS

and its publications: Transactions on

Electron Devices (T-ED), Electron De-

vice Letters (EDL) and the EDS News-

letter. The review will include a consid-eration of directions for the future of EDS. Significant time will be devoted in the coming months to preparation for this review by the officers of EDS.

Secretary’s Report. The minutes of the June 1 meeting in Athens, Greece, were approved unanimously. Jim then asked for comments and re-actions from AdCom members on the quality of the EDS Newsletter, as he is intending to conduct a review of the Newsletter during the coming year.

Review of the Executive Commit-

tee Meeting held December 13, by

Renuka Jindal. Renuka mentioned as a highlight of the ExCom meeting that there was considerable discussion about the Strategic Plan, particularly its implementation. Al Mac Rae had pointed out the importance of assign-ing to specific individuals the respon-sibility for determining that specific points of the plan were actually car-ried out. It was agreed that this was essential and would be considered for the June 25 review of EDS.

Additional items covered in the ExCom meeting included: a sum-mary of the results of April Brown’s EDS membership survey; an initia-tive to introduce the concept of elec-tron devices to students at the high school level; the status of plans for the Spring meeting in Mumbai, India (the decision to proceed was approved both by the ExCom and later at this meeting by the AdCom); an update on the proposal for an Early Career Award; and a detailed discussion about the technical aspects of provid-ing DVDs of all EDS Short Courses, particularly the copyright infringe-ment issues. On this issue it was felt by members of the AdCom that we should favor keeping the cost of these

DVDs low, as opposed to employing expensive security measures. Finally, it was announced that a copy editing service would be available to edit the English of articles to be published in T-ED and EDL, if all authors of the ar-ticle are members of the EDS.

An optimistic Treasurer’s Report

was provided by Steve Parke. For Fiscal 2007 the only major change is a net $770K surplus, bringing the re-serve up to $6.65 million. For Fiscal 2008 the forecast is for a net income of $278K. Steve pointed out that the Book Broker earns a substan-tial amount for EDS (~$900K), and income from our conferences nets ~$630K, most of which comes from one conference, here unnamed! Many conferences have been hit by travel restrictions due to the declin-ing state of the economy.

The situation for 2009 may not be so optimistic, which will not surprise any of us. The biggest “hit” will be an estimated $2.5 million take-back of EDS reserves by IEEE Central, due to large 2008 IEEE investment losses. The Executive Committee therefore prioritized the list of initiatives that are under consideration for 2009, in order to accommodate whatever take-back may be required by IEEE. Finally, page counts and costs of journals for 2010 were described by Steve: T-ED page count increases by 300 pages, EDL by 100, and member prices increase accordingly by a few dollars. The motion to approve these minor changes in page charges and membership publication fees was approved unanimously.

Bill Van Der Vort gave his usual

extensive report as the Executive

Director of EDS. He is working on the details of the meeting next June in Mumbai, leading efforts to rejuve-nate US chapters (which are suffering from decreasing membership), devel-oping the possibility of offering short courses on the web (IEEE Expert Now)

DECEMBER 2008 ADCOM MEETING SUMMARY

James L. Merz

(continued on page 8)


2009 IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

The 34th IEEE Photovoltaic Specialists Conference, the preeminent technical photovoltaics meeting, will be held at the Marriott Philadelphia Down-town in Philadelphia, Pennsylvania, June 7–12, 2009. The world’s lead-ers in photovoltaics will be attending and presenting the latest information on photovoltaic research and appli-cations. More information regarding this exciting conference can be found at http://www.34pvsc.org.

The conference is sponsored by the IEEE Electron Devices Society. The Conference Chair is Dr. Timothy J. Anderson of the University of Florida in Gainesville, Florida. The Program Chair is Dr. Rob Walters of the U.S. Naval Research Laboratory in Washington, D.C.

Historically, the mission of the Photovoltaic Specialists Conference has been to present groundbreaking research papers on all aspects of PV-relevant materials, devices, systems and applications. A very strong Tech-nical Program will once again be presented that will encompass nine programmatic areas covering topics from novel materials and devices, thin-film cells made from CIGS and CdTe and emerging semiconductors, crystalline and amorphous silicon, III-V cells, concentrator devices and

systems, and module and system experience including reliability stud-ies. It is expected that the record at-tendance recorded at the 33rd Pho-tovoltaic Specialists Conference in 2008 will be matched due to the con-tinuing increased interest in the field of photovoltaics.

The Technical Program will be complemented by six tutorials to be presented on Sunday, June 7. These tutorials will be taught by experts in their fields and will be valuable to newcomers to photovoltaics, as well as to seasoned veterans who wish to learn about recent trends. It is also expected that the conference Exhi-bition will be substantially larger than in recent years because of the greatly increased level of interest in photovoltaics in the USA.

A strong Auxiliary Program is plan ned, to include daily meetings,

seminars, and panel discussions in topics beyond the scope of the Tech-nical Program. It is expected that this Auxiliary Program will attract many people to the conference who may not normally attend the Technical Program.

The IEEE William R. Cherry Award is presented at each IEEE Photo-voltaic Specialists Conference and recog nizes those who have made outstanding contributions to the advancement of photovoltaic sci-ence and technology. This award is named in honor of William R. Cherry, a founder of the photovoltaic community.

The conference site is in the heart of America’s original capital of Philadelphia and is surrounded by rich revolutionary history and culture. It is within walking distance of America’s most historic square mile which includes dozens of his-torical sites, including the Liberty Bell Center, Franklin Court, the Betsy Ross House, and Independence Hall, to name but a few.

Jeffery L. Gray2009 PVSC Graduate Student

CoordinatorPurdue University

West Lafayette, IN, USA

Philadelphia at Sunset

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For the first time in its history, the 2009 IEEE International Intercon-nect Technology Conference (IITC) will take place outside of the United States in Sapporo, Japan, from June 1 to 3. Increasing packing densities

and the functional complexity of high performance applications are driv-ing innovation in both how intercon-nects are fabricated and how they can be bundled in advanced packag-es. The conference will feature more

than 80 technical presentations by the world’s experts in interconnect wiring within the semiconductor and related industries.

This year, some 600 scientists, engineers, exhibitors and other

2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)

U P C O M I N G T E C H N I C A L M E E T I N G S


Odori Park, in the heart of Sapporo, Japan

interconnect professionals will gath-er in beautiful Sapporo, Japan, for the IITC. The international locale is ideal for expanding the perspective on how to address these challenges. The conference will be preceded by a one-day Short Course on Sunday, May 31, and also will feature a prod-uct exhibition. Lunch will be pro-vided for registered attendees each weekday, and the popular supplier seminars will be held Monday and Tuesday nights.

The diversity of logic and memory applications in the electronics sector has required an expanding focus in the area of interconnect technology. Shrinking dimensions provide limita-tions to RC scaling which need to be addressed by new materials. Model-ing of both process and circuit per-formance is critical to understanding what solutions are practical for imple-mentation over the next two technol-ogy generations. These will be key topics of discussion at the conference.

3-D interconnects provide a new avenue for linking functionality into a usable module. A special focus on in-terconnect/package interactions ad-dressed at this year’s IITC includes:

Thermal management technology • Green technology (Sn-based sol-• der, Cu-pillar, etc.) Flip-chip, wafer level packaging, • chip-on-chip, MCM, etc. Novel board level interconnect, • package architectures.

In addition, the conference will continue its 12 year history of ad-dressing fundamental interconnect performance and fabrication issues of interest to both the development and manufacturing communities. Sessions for IITC 2009 include the following topics:

Materials and Unit Processes• Process Integration for Logic and • Memory

Process Control / Modeling• Reliability• TSV and 3-D Interconnects• Interconnect Systems• Packaging• Novel Materials and Concepts.•

“The needs of the industry have demanded IITC to adapt, both in the scope and content our techni-cal program,” said J. D. Luttmer of DRS Infrared Technologies and IITC 2009 General Conference Co-Chair. “By rotating our forum to Asia and Europe in 2011, IITC is exposing the interconnect com-munity to a wider audience in each region. Additionally, by focusing on emerging technologies like 3-D integration, we can provide our constituents with up-to-date in-formation to guide them as they make both strategic and tactical decisions.” Hiroshi Toyoda, the 2009 IITC Publicity Chair adds, “With the forum in Sapporo this year, we will have an exciting envi-ronment for technical interchange as a bonus! We will be able to in-corporate a wider range of partici-pation from Asia this year. These new perspectives will benefit all participants.”

Sapporo, Japan has been cho-sen for this year’s conference due to its proximity to the large technical

community in Japan, Korea and China. Located in Hokkaido, the northernmost of Japan’s four main islands, Sapporo is famous for its fresh seafood, barbecue, beer and ramen. June in Sapporo is particu-larly beautiful with low humidity and sunny skies. The area attracts many outdoor enthusiasts, including hik-ers, cyclists and campers during the summer months.

Plenary Keynote Presentation /

Short Course

The conference will feature a key-note talk by an invited speaker, well recognized in the industry. A short course is planned for May 31 and will be conducted by interconnect experts active in the field.

IITC 2010 to be held in the

United States

2009 is the first year the IITC will be-gin rotating among locations in Asia, Europe and the U.S. In 2010, the con-ference will return to the U.S., to be held at Burlingame, California. Plans are underway for a 2011 conference location in Europe.

Further information

For registration and other infor-mation, interested persons should visit the IITC 2009 home page at www.ieee.org/conference/iitc. Or contact:

Wendy Walker, Conference ManagerWiderkehr & Associates19803 Laurel Valley PlaceMontgomery Village, MD 20886 USATelephone: (301) 527-0900 ext. 104Fax: (301) 527-0994E-mail: [email protected]

Michael Armacost2009 IITC Publicity Co-Chair

Applied MaterialsSunnyvale, CA, USA


During the week of June 21–25, 2009, the 15th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers’09), will convene at the Sheraton Denver Hotel in Denver, Colorado, USA, with an expected 900+ attendees.

Transducers, sponsored by the IEEE Electron Devices Society, is the oldest technical conference devoted specifi-cally to Micro-Electro- Mechanical Sys-tems, or MEMS, beginning in Boston in 1981. The conference meets bian-nually and rotates among host sites in N. America, Europe, and Asia. It boasts the largest attendance, largest abstract submissions, and largest international attendance and participa tion of any MEMS event. Transducers will feature four days including short courses, presentations/posters, and exhibitors, highlighting the latest work in:

Bio, Medical, Chemical, and • Micro Total Analysis SystemsFabrication and Packaging• Mechanical and Physical • SensorsMaterials and Characterization• Design, Simulation and Theory• Actuators• Optical MEMS• RF MEMS• Nanotechnology• Nanotechnology• Energy and Power •

Work of both a fundamental and applied nature will be presented. Moreover, Transducers has estab-

lished the largest industrial exhibition of products and services of any of the major MEMS technical conferences that will run in parallel with the tech-nical sessions.

The Transducers’09 Chair, Profes-sor Khalil Najafi, (University of Mich-igan) and Technical Program Chair, Martin A. Schmidt, (MIT) as well as the Executive Organizing Committee are pleased to announce:

The establishment of three noted • plenary speakers:

Kensall D. Wise, Ph.D. – • University of Michigan, USANico F. de Rooij, Ph.D. – Univer-• sity of Neuchatel, SwitzerlandMasayoshi Esashi, Ph.D. –• Tohoku University, Japan

Furthermore, twelve invited • speakers will anchor 4 parallel sessions for the 4-day conference:

Nelson Bradley, Ph.D. ,• ETH Zürich, Switzerland “Towards NanoRobots”Andrew de Mello, Ph.D., • Imperial College London, UK “Optical Detection In Micro-

fluidics: From the Small to the Large”

Amy Duwel, Ph.D., Draper • Laboratory, USA “Energy Loss in MEMS

Resonators and the Impact on Inertial Instruments”

Jan Eijkel, Ph.D., Twente • University, The Netherlands “Nanofluidics: Fundamen-

tals and Applications”

Gwo-Bin Vincent Lee, Ph.D., Na-• tional Cheng Kung University “Optically-induced Dielec-

trophoresis using Polymer Materials and Their Biomed-ical Applications”

Xinxin Li, Ph.D., Chinese • Academy of Sciences, China “Cantilever Sensors Equiped

with Nano Sensing Effects for Ultra-Sensitive Detection of Bio/Chemical Molecules”

John Rogers, Ph.D., • University of Illinois at Urbana-Champaign, USA “Materials and Mechan-

ics for Stretchable Electron-ics – From Electronic Eye Cameras to Conformal Brain Monitors”

Isao Shimoyama, Ph.D., • University of Tokyo, Japan “MEMS on Robot Applica-

tions”Roy Shuvo, Ph.D., • University of California, San Francisco, USA “Silicon Nanpore Membrane

Technology for an Implant-able Bioartificial Kidney”

Hiroshi Toshiyoshi, Ph.D., • University of Tokyo, Japan “Optical MEMS for Informa-

tion Technology”Ann Witvrouw, Ph.D, IMEC, • Belgium “CMOS-integrated SiGe

MEMS: Application to Micro-mirror Arrays”

2009 IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS, AND

MICROSYSTEMS

TRANSDUCERS’09 WILL BE HELD IN DENVER, COLORADO. THE EVENT PROMISES TO DRAW OVER 900 INTERNATIONAL INDUSTRY LEADERS.


Ming Wu, Ph.D., University of • California, Berkeley, USA “Optoelectronic Tweezers

for Parallel Manipulation of Cells and Nanoparticles”

Short course and tutorials will • be offered on Sunday, 21 June. Details will be posted at: http://www. transducers09.org/courses.html.Exhibitor space may also • be spon sored by submitting an order at http:// www. transducers09.org/exhibition.html.

Transducers ’09 is a must-attend event for anyone in the MEMS field. There will be presentations of cutting-edge research across the breadth of the field. Well-known academic, industrial, and government researchers from around the world will be in attendance. A wealth of companies will also be displaying their products and services at the ex-hibition session. And, short-course training sessions will be available. Net-working events are available to inter-act with colleagues from around the world – potential collaborative research and development partners, suppliers,

customers, new employees, consul-tants, media, and competitors will at-tend. Transducers ’09 in the “Mile High City” will enable the connections your organization needs to succeed in the fu-ture, all in one location. Information on the conference can be found at: http://www.transducers09.org/. We look for-ward to seeing you in June in Denver.

David J. MonkTransducers ’09 Promotions

Committee ChairFreescale Semiconductor

Tempe, AZ, USA

The conference alternates be-tween the U.S. and Europe to bet-ter serve its international audience. ASMC is sponsored by the IEEE Elec-tron Devices Society (EDS), the IEEE Components Packaging and Manu-facturing Technology Society (CPMT), and Semiconductor Equipment and Materials International (SEMI). ASMC 2009 is co-chaired by Walter Schoenleber, Applied Materials, and Brett Williams, ON Semiconductor.

ASMC 2009 continues a long tra-dition of unveiling breakthroughs in semiconductor manufacturing—from fab productivity and profitabil-ity to advanced process controls and device yield. Peer-reviewed technical papers and expert keynotes attract engineers and managers to advance their semiconductor manufacturing knowledge with real solutions . . . direct from the fab.

This year’s sessions include Ad-vanced Equipment Processes and Materials; Advanced Metrology;

Advanced Process Control; Best of ISSM; Contamination Free Manu-facturing; Cost Effectiveness and Manufacturing Efficiency; Defect In-spection; Factory Automation and Dynamics/Industrial Engineering; Lithography Advances and DFM; Vir-tual and Advanced Metrology; Yield Learning and Methodologies.

The agenda features topic-specific morning and afternoon sessions, a distinguished line-up of keynote speakers; technology-specific panel discussion led by industry experts; and an interactive poster reception sponsored by KLA-Tencor.

An ASMC 2008 Best Paper, spon-sored by Entegris, and a Best Stu-dent Paper sponsored by ISMI, will also be awarded.

Who should attend ASMC 2009?

Semiconductor professionals involved in production control, process control, process transfer, process applications, defect inspection, yield and cycle time

improvement, yield methodology, cost reduction, preventive maintenance, line supervision, device characteriza-tion, facilities fab operation, product management, project management, strategic marketing and quality.

Pullman Schweizerhof Berlin

A block of sleeping rooms has been reserved for conference participants at the Pullman Schweizerh of Berlin in the heart of Berlin. To make a reservation by phone, please contact the hotel (tel. +49 30 2696-0) or complete and fax the hotel registration form located on the ASMC website. Mention “ASMC” or “SEMI” to obtain the special group rate.

For schedule, hotel information and on-line registration, visit http://www.semi.org/asmc2009. Or contact: Ms. Margaret M. Kindling, SEMI ([email protected])

Margaret KindlingSr. Program Manager, SEMI

Washington, DC, USA

(continued from page 1)

2009 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC)


and providing DVDs of short courses, and working to improve efficiency and best practices for many of the EDS activities. Of particular interest is the decision to create a video on solar en-ergy and R&D in photo voltaics, which was welcomed by members of the AdCom. Another initiative approved by the AdCom is to have a student- authored article published in two is-sues of the EDS Newsletter each year.

Albert Wang, the VP for Mem-

bership, expects that the overall membership of EDS will continue to increase. IEEE members num-ber over 300,000 (secretary’s note: I believe this is the largest technical society in the world), and IEEE mem-bers who attend IEDM can become members of EDS simply by checking a box, at no extra cost. In addition, we subsidize members earning less than $12,900 per year. Albert de-scribed the many initiatives he has introduced for increasing the mem-bership of EDS, but stressed the challenges that remain in terms of building EDS membership: revers-ing the negative trend in regions 1-6 (the U.S.), providing a wake-up call for Region 8 (Europe, the Middle East, and Africa), and continuing to gain members in Regions 9 and 10 (Latin America, Asia, and the Pacific). Albert continues to develop incen-tives for chapter membership drives, link success with the chapter subsidy program, and provide incentives for the formation of additional chapters, including student chapters. It was pointed out that students get free ac-cess to all IEEE benefits for the cost of EDS membership, and this is con-sidered an inducement to join EDS. However, more and more resources are provided to students through their university, and we need a strat-egy to deal with this.

This discussion was continued during Juin Liou’s VP report on

Regions and Chapters. J.J. stated that the number of chapters has in-

creased each year between 2001 and 2008, and that there are currently 143 chapters, with 19 student chapters and 52 under development. Of those under development, 19 are from Region 10, and an additional 10 are in Europe. JJ sees the possibility of reaching 200 chapters in a few years, in which case he will retire from this job! Chapters from Regions 4, 5, and 6 are meeting currently in San Fran-cisco; Region 10 chapters will meet in Mumbai in May, and Region 9 chapters in Buenos Aires in Novem-ber 2009. A highlight of JJ’s report was the Chapter of the Year Award to the chapter in Orlando, Florida. [Sec-retary’s note: the EDS Newsletter is an ideal vehicle to advertise chapter activities, and hence hopefully in-crease chapter membership!]

Paul Yu provided the VP Report

on Educational Activities. The Dis-tinguished Lecturer (DL) program continues to grow, with 216 lectures in the past year, up from 196 last year. Currently, 135 EDS members serve as DLs. $90K has been autho-rized for this program. An additional $8.6K was requested, but deferred to 2009. An IEEE proposal to make a video documentary on solar energy was discussed. EDS was asked by IEEE for $30K out of a total of $150K for this project. There was a high level of enthusiasm for this project, and it was proposed that two EDS members should be involved in its oversight. Because of the budgetary constraints anticipated for next year, however, a total of $20K was autho-rized for the project by a unanimous vote of the AdCom. The Graduate Student Fellowship Committee, chaired by Agis Illiadis, announced that EDS will give up to 6 PhD fellow-ships next year and EDS will spon-sor travel to IEDM for these fellows to attend the conference and receive their award of $5,000.

Jon Candelaria, the VP for Con-

ferences, first summarized the over-all financial situation for conference income. He felt that conference in-

come is reaching a plateau, primarily because we have reached the limit of the number of conferences that EDS can sponsor in a year. He has identified opportunities to co-locate or merge topically overlapping meetings—four mergers were listed. The merger of conferences that have not been doing so well individually has proved to be a successful approach. He is also look-ing for new, emerging topical areas by identifying opportunities to partner with other societies (e.g., life science with NIH; photovoltaics with LEOS, SEIA, OIDA). Jon concluded his report by describing the Humanitarian Tech-nology Challenge, which is a joint ef-fort between IEEE and the United Na-tions. Thirty-seven areas have been identified for the initial focus of this program. Of these, three are being actively promoted: 1. Reliable electric-ity, 2. Data connectivity of rural district health areas, 3. Patient identification and the connection to existing health records. A major conference will be held on these subjects in 2009; Jon asked that interested potential partici-pants in this conference contact him ASAP at [email protected].

VP Awards – Al Mac Rae. The Awards Committee has simplified the Ebers and Education Award nomina-tion forms, as it is felt that the current forms discourage people from submit-ting nominations. Al wants to make the selection of awardees as transparent as possible, and he has written a brief article appearing elsewhere in this newsletter on the attributes of a win-ning nomination. A new award will be established for EDS GOLD members. A number of the 2008 awards will be described elsewhere in this newsletter, but of these, two must be mentioned here: the IEEE Medal of Honor was awarded to Gordon Moore, and the EDS Distinguished Service Award to Hiroshi Iwai. Hiroshi reported on this year’s Fellow evaluation process and the EDS members who were elect-ed to EDS Fellow grade. A listing of these members will also be described e lsewhere in this newsletter. A total

(continued from page 3)


of 21 Fellows (who were evaluated by EDS) were elected this year, 17 of which are members of EDS. In addi-tion, another 16 EDS members were elected Fellows and evaluated by other societies. The absence of women and minorities from the list of new Fellows was discussed. It was pointed out that a major effort should be made to nom-inate women and minorities, but once nominated the evaluation and selec-tion should be gender and race blind.

Of the many additional reports that were provided during the meet-ing, only a few can be highlighted here. These include:

Cary Yang• commented on the Nanotechnology Council (NTC), formed in 2001 with the support of 20 IEEE Societies. There re-mains a problem of overlap of publications in the Transactions on Nanotechnology with T-ED, but the editors of both journals

are working hard to reduce this problem.Steve Ringel• reported on the Photovoltaic Devices Commit-tee. The Photovoltaics Specialists Conference has been very suc-cessful for a number of years, but it is not a cited journal, suggest-ing that there is a real need for a new IEEE journal in this area.Ilesanmi (Ade) Adesida• outlined proposed changes in the elec-tion procedures for nomina-tion and election of officers and technical committee chairs. All changes were approved by the AdCom and will be effective for 2009.Renuka Jindal • described the Vision and Mission statements that have been drafted for EDS and led an ensuing discussion about their strengths and weak-nesses. He and the editors of the

EDS journals then provided considerable detail about these publications.Jeff Welser • talked about the

Technology Management

Council, formed last January. The Council’s vision is to have management positions given to people who have come up through technical rather than business experience. The goal is to help technical people be-come managers, and learn how to succeed in those positions.

The meeting was formally closed at 4:07 p.m. by Cor Claeys.

Respectfully submitted, Jim Merz, EDS Secretary

1 http://www.snopes.com/quotes/twain.asp

Secretarial Comments

Mark Twain is erroneously1 believed to have said: “The coldest winter I ever spent was a summer in San Francisco.” Twain may never have said what many Bay Area visitors feel in summer, but it can be cold in winter too, as it was this December 14! However, this secretary arrived in San Francisco from the Big Island of Hawaii, on his way home to South Bend, so the AdCom meeting was a pleasant interlude to ease my body temperature back to Midwestern Win-ter (if that can ever really happen).

AdCom members rushing to the San Francisco Hilton on December 14th (photo from http://blog.streetcar.org/)

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SUMMARY OF CHANGES TO THE EDS BYLAWS

This initiative is jointly sponsored by the IEEE and the United Nations Foundation and also involves a wide variety of Non-Governmental Orga-nizations (NGOs), other foundations and corporations.

The driving force behind this work is the lack of a comprehensive and cohesive program framework that brings together humanitarian organizations, first responders, tech-nical experts, corporations, and phil-anthropic groups to address some of the world’s greatest humanitarian challenges today.

The desired outcomes of this effort are to: 1) identify a specific set of chal-lenges to begin addressing immedi-ately; 2) use a systematic approach to define and drive technological solutions that are implement able as well as sustainable; 3) define repeat-able methodologies which can be used on a continuing basis towards addressing challenge- oriented, large scale efforts; 4) raise the awareness of IEEE as a global association of professionals and academics who solve technological problems that positively impact humanity.

(the following excerpt is from Karl Perusich, 12/08/08) –

“On November 19, 2008 a confer-ence call was held with some 60 participants that brought together technologists and humanitarians to begin outlining a strategic plan for addressing the 3 challenge areas selected for initial focus:

Reliable Electricity • Data Connectivity of Rural • District Health Offices Patient ID and Tie to Health • Records

The attendees were divided into work groups for each of the challenge areas and charged with developing detailed, specific chal-lenge definitions.

We are working toward holding a general conference late in the 1st quarter of 2009 at a site to be determined to bring IEEE technol-ogists together with Humanitar-ians to present the challenge defi-nitions developed by each of the three work groups, and launch the Solution Development Process.”

As your EDS representative to this So-ciety Partnership Group, I have posted a set of summary slides with more in-formation about this initiative and the prioritized challenge areas to the EDS web site (http://www.ieee.org/portal/pages/society/eds/index.html).

After reviewing this information if anyone in EDS has relevant exper-tise and interest in participating in this effort, please send an email with your name and contact information to myself, Jon Candelaria ([email protected]), or to Karl Perusich ([email protected]) or Harold Tepper ([email protected]) to receive an invitation to participate in the upcoming general conference, access to the initiative’s program web site, and all on-going work.

I hope you will give serious con-sideration to participating in this critically important activity. If you have any questions, please contact me anytime.

Jon CandelariaEDS Vice-President of MeetingsEDS Representative to the HTC

Society Partnership Group

S O C I E T Y N E W S

HUMANITARIAN TECHNOLOGY CHALLENGE

CALL FOR EDS VOLUNTEERS

On 14 December 2008, the EDS Ad-ministrative Committee (AdCom) ap-proved changes to the EDS Bylaws. These amendments were then ap-proved in January 2009 by the Chair of the IEEE Technical Activities Board (TAB) and later at the IEEE Technical Activities Board meeting in February 2009. The changes will take effect 30 days following their publication in this copy of the Newsletter (distrib-

uted to all EDS members), unless ob-jections are received from at least 5% of the EDS membership. The follow-ing is a summary of the changes:

GENERAL:

To exclude Technical Committee • Chairs from the EDS Bylaw that states all AdCom elected mem-bers and ex-officio members with vote who miss two consecutive

meetings shall be dropped from AdCom.

OFFICER ELECTION:

All candidates will still need to be • nominated by a full voting member, but now must be endorsed by 2 oth-er full voting members, as well (cur-rently only 1 endorsement needed); each full voting member can only nominate one candidate for each


EDS REGIONS/CHAPTERS COMMITTEE REPORT

Chapters are the backbone of the IEEE societies. The IEEE Electron De-vices Society (EDS) Regions/Chapters Committee (RCC) is led by the Vice-Pres-ident of Regions/

Chapters, while its members are leading researchers and engineers from the ten regions worldwide. The Committee has five subcommittees (SRCs) representing the following geographical areas: North America East (Regions 1-3 & 7); North Amer-ica West (Regions 4-6); Europe, the Middle East and Africa (Region 8); Latin America (Region 9); and Asia & Pacific (Region 10). Each Subcom-mittee is headed by a Chair and sev-eral Vice-Chairs. The number of EDS chapters has increased fairly rapidly in the past several years, and as of the end of 2008, the total number of EDS chapters stands at 143. As such, the EDS is one of the leading IEEE societ-ies with regards to the total number of chapters. The growth is particularly noteworthy in Region 10 (Asia and Pa-cific), with the number of chapter in-creases from 18 in 2001 to 38 in 2008. Region 9 (Latin America) has also had a healthy chapter increase of about 40% in the past five years. Another exciting statistic is the fact that there are currently more than 50 potential EDS chapters either under discussion or already being developed. As a re-

sult, it is optimistic that the EDS can reach a significant milestone of 200 chapters in the foreseeable future.

An important mission of the Com-mittee is its maintenance and promo-tion of chapter activities serving the EDS members in the different parts of the world. These activities include the coordination of seminars, mini-colloquia (MQ) and forums using the EDS Distinguished Lecturer (DL) Program. All of these activities help to disseminate a broader scope of academic and technical exchange. Working closely with the EDS Educa-tional Activities Committee, the RCC has promoted and organized an av-erage of about 8 MQ annually in the past several years in the U.S., China, Greece, UK, India, Hong Kong, Sin-gapore, Japan, Korea, Brazil, Mexico, Taiwan, etc. A much larger number of distinguished lectures were held in many chapters worldwide (over 200 in 2008). These activities have cer-tainly provided invaluable and added values and benefits to our members.

Unfortunately, some EDS chap-ters have not been able to main-tain a certain level of activity, and in the past, we have had to make painful decisions to dissolve a few inactive chapters. In an effort to as-sist the chapters to be more active, since 2006, we have increased the maximum annual chapter subsidy from $1,000 to $1,500 for ED only chapters and from $500 to $750 for ED joint chapters. The Committee

also closely monitors the chapters, and if a lapse in activity is found the members will work with the chapters to organize distinguished lectures, mini-colloquia, membership drives, and/or coordinate visits by EDS offi-cers. At this time, chapters in Region 7 (Canada) and Region 8 (Europe and Africa) need a boost, and the Committee has developed a plan to organize an MQ at the University of Waterloo in Canada and the Universi-ty of Glasgow in the UK, respectively, to be held in the Spring of 2009.

Chapters also play a key role in in-creasing membership. Collabo rating with the EDS Membership Commit-tee, our Committee strides to include membership drive events with chap-ter activities. For example, we have found that publishing student poster papers in an EDS-sponsored MQ is an excellent avenue to bring the students to join the event and to learn the ben-efits EDS has to offer and to encour-age them to become EDS members.

The committee is continuously exploring ways to make our chap-ters active, to provide benefits to our members, and to attract new mem-bers to our Society. We welcome your comments and suggestions, and we pledge to do our best.

Juin J. LiouEDS Vice-President of Regions/

ChaptersUniversity of Central Florida

Orlando, FL, USA

Juin J. Liou

officer position; full voting members cannot nominate or endorse each other for an officer position; names of nominators and endorsers will be included on the ballot; the Nomina-tions & Elections Chair is excluded from voting, except in the case of a tie; included our process fol-lowed when there are three or more candidates for a given position and no candidate receives the required majority vote (51%).

MEMBER-AT-LARGE ELECTION:

Self-nomination is still allowed, • but all candidates will now need to be endorsed by a full voting member; each full voting mem-ber can endorse as many candi-dates as he/she wants; names of nominators and endorsers will be included on the ballot; the Nominations & Elections Chair is excluded from voting, ex-cept in the case of a tie; included

our current rank order process, which has been used in case of any ties.

The complete EDS Constitution and Bylaws may be obtained from the EDS Executive Office or on the Society website at www.ieee.org/eds/(click on Administrative Committee).

Ilesanmi Adesida, EDS Jr. Past President

University of Illinois, Urbana, IL, USA


In conjunc tion with the 2008 IEDM, the ElectronDevices Society (EDS) Regions 4–6 Chap ters Meet-ing was held at the Hilton San Francisco Hotel, California, in the

evening of December 14, 2008. The attendees included chapter repre-sentatives from Regions 4-6 and the ED Orlando and Mid-Hudson Valley chapters, sev eral Chapter Part-ners, chairs and vice-chairs of the EDS Subcommittee for Regions and Chapters (SRC), and the EDS President-Elect.

The meeting started with an intro duction by Juin Liou, the EDS Regions/Chapters Vice-President. Juin reported the EDS mem bership statistics and the worldwide growth of ED chapters. He also announced the winner of the 2008 Chapter of the Year Award, the ED Orlando Chapter, for its excellence in organizing mini-colloquium (MQ) and monthly tech-nical seminars of topical importance, collaboration with the local student branches, membership drive, and so on. Juin also announced that the Region 10 Chapters Meeting will be held in Mumbai, India on May 31, 2009, in conjunction with the Spring AdCom meeting.

Following the presentation by Juin, the SRC North America West (NAW) Chair, Samar Saha, reported the activities of Regions 4-6. These regions include 22 active ED chapters and discussions on forming two regu-lar chapters and a student branch in Region 6 are in progress. Samar re-ported that in the year 2008, Regions 4-6 chapters held two EDS spon-sored MQs, two chapter supported Conferences/ Symposia/Workshops, and 16 distinguished lectures along

with the regular monthly seminars of topical interest.

One of the objectives of the Re-gions 4-6 Chapters Meeting was to highlight some of the available benefits and services that each ED chapter can offer to its members. Accordingly, several value-added member benefit services available to EDS members were discussed in the meeting. One of the EDS member benefits and services presented by Samar is QuestEDS. As the Editor-In-Chief of QuestEDS, he showed that by using the user friendly web-page of QuestEDS, EDS members can submit technical questions online concerning the EDS Field of Interest (FOI) and can view the answers pro-vided by the experts in the field on-line. Each question is reviewed and the response to an accepted ques-tion is posted within two weeks.

Continuing on the same theme of member benefits, EDS President-Elect, Renuka Jindal, addressed the attendees and re-iterated the role of each chapter to provide member benefits and services through high quality activities of interest to the members of the respective regions. He communicated his mission to promote EDS activities, membership drives, and growth in North America in addition to the worldwide growth in EDS membership and chapters. He encouraged the chapters to actively participate in revitalizing the IEEE and EDS activities in North America.

In discussing member benefits, EDS Vice President of Educational Activi-ties, Paul Yu, reported that the chapter can offer member benefits and servic-es through the EDS Distinguished Lec-ture (DL) Program by inviting DLs as seminar speakers on topics of mem-ber interest. He also discussed EDS student member benefits through the Masters and Ph.D. Student Fellowship programs and announced the names

of eight 2008 recipients, four for each fellowship program.

Furthermore, each ED chapter can provide member benefits and services by participating in the local high school electronics learning program offering Electronic-Kit (eKit) to attract future EDS members. Fernando Guarin, chair of the Mid-Hudson Valley ED chapter reported that eKits encourage and pro-mote engineering, math, and science education in high schools and provide a “hands on” learning environment and a “fun” way to engage high school students to learn electronics.

Similar to QuestEDS, the IEEE

Expert Now provides an excellent member benefit by offering online continuing education courses. Tara Gallus, IEEE Continuing Education and eLearning Program Manager presented a brief overview of IEEE Expert Now. The Expert Now courses are developed from the best of IEEE technical societies’ conference mate-rials under the supervision of an ex-pert editorial board and divided into several one-hour modules for flexi-ble learning opportunities. These on-line courses are available worldwide, 24/7 via easy to use player-viewer, audio and video files, diagrams, and animation. The ED chapters can pro-vide value-added member benefits and services by offering courses of member-interest through the “Expert Now Section-Chapter Program.”

After the presentations and dem-onstrations of various member-benefit programs, the participating ED chap-ter representatives reported their 2008 chapter activities. First of all, Slavica Malobabic, the Chair of the 2008 Chapter of the Year winner, presented the ED Orlando chapter achievements. She attributed the success of the Or-lando chapter to its large membership base (over 1200 members) and close cooperation with nine IEEE society chapters, two affinity groups, and two

EDS REGIONS 4-6 CHAPTERS MEETING SUMMARY

Samar K. Saha


student branches in the region. The chapter organized two-day mini-col-loquium (MQ) and monthly seminars, were well attended.

The participating chapters from Regions 4-6 were ED Santa Clara Val-ley (SCV), Dallas, and Central Texas, and ED joint chapters Milwaukee and Phoenix. Several of the Region 4-6 chapters are situat ed in the areas of strong industrial pres ence (such as Phoenix, Central Texas, and Santa Clara) and their 2008 monthly tech-nical seminars include current topics related to advanced semiconductor device and manufacturing as well as emerging devices and technolo-gies including bioelectronics, nan-otechnology, and photovoltaics.

The ED SCV Chapter Vice-Chair, Jay Prasad, reported that the chap-ter held 12 monthly seminars with an average attendance of about 50 per seminar, one MQ and one sym-posium on photovoltaic energy con-version devices and technology. The ED Dallas Chapter Chair and SRC-NAW Vice-Chair, Zeynep Celik-Butler, reported that the chapter organized

seven seminars with attendance of about 60 to 90 per seminar. She also showed the importance of live videotaping of the talks and post-ing them on the chapter website for the benefits of the interested lo-cal as well as global EDS members. The ED Milwaukee Chapter Chair, Shrinivas Joshi, discussed how the chapter after re-activation in 2004, has excelled through the active participation of students from local Universities in organizing two-three meetings in a year through the EDS DL and Chapter Subsidy programs. His future plans include organizing workshops and student field trips to visit different industries. ED Central Texas Chair, Thuy Dao, reported that the chapter held eight seminars on emerging EDS FOI and a Solar Tech-nology workshop. She also reported on the chapter efforts for member-ship drives for 2008 (and to contin-ue in 2009), of organizing monthly seminars and workshops of topical interest and focusing on the emerg-ing technology in addition to the traditional semiconductor technolo-

gies. Lastly, EDS Vice President of Meetings and an Ex-officio commit-tee member of the joint ED Phoenix Chapter, Jon Candelaria, presented the 2008 chapter activities. Jon reported that the Phoenix chapter successfully organized 12 technical seminars and an annual workshop on “emerging device and packaging technologies.”

Finally, an open forum discussion was initiated by Juin Liou to solicit participants’ ideas on various issues confronting the ED chapters and their members. The meeting was con-cluded in concurrence with the mis-sion of the President-Elect, Renuka Jindal, that is, re-vitalization of IEEE and EDS activities in North America and membership drive by providing value-added member benefits and services along with the globalization of EDS.

Samar K. SahaEDS V-P of Publications & Chair of

SRC-NAW Silterra USA Inc.

San Jose, CA, USA

The EDS Chapter of the Year Award is presented annually to recognize

an EDS Chapter for the quality and quantity of the activities and pro-grams implemented during the prior July-June period.

On December 15, 2008, at the IEDM held in San Francisco, Cali-fornia, the ED Orlando Chapter re-ceived the EDS Chapter of the Year Award, which included a certificate and check for $1,000. The award was received by Slavica Malobabic, Chapter Chair.

The ED Orlando Chapter has been very active to stimulate the growth of the Society and to in-crease the membership value. In the past year, the Chapter spon-

sored and held a mini-colloquium consisting of 9 talks and 2 technical meetings. There is a strong indus-trial and academic involvement in the Chapter’s activities as reflected in the speakers of the seminars. I want to congratulate the Chapter for providing the exemplary con-tributions and enhanced values to the members of the Electron Devices Society.

Juin LiouEDS Vice-President of

Regions/ChaptersUniversity of Central Florida

Orlando, FL, USA

2008 EDS CHAPTER OF THE YEAR AWARD

EDS President, Cor Claeys presenting the EDS Chapter of the Year Award to Slavica

Malobabic, ED Orlando Chapter Chair


Message from the EDS

Newsletter Editor-in-Chief

I am writing this message after a lapse of more than a year. It is some-times astonishing to see how quickly time goes by. As p r o f e s s i o n a l s , all of us are very busy in our work. I hope that this is-

sue comes at a very prosperous time in your career.

I would like to take this opportu-nity to thank three outgoing Regional

Editors for outstanding service to the Newsletter and Electron Devices community. They are Samar Saha (Regions 5 & 6 – Southwestern and Western USA), Jacobus W. Swart (Region 9 – Latin America), and Hei Wong (Region 10 – East Asia). Their outstanding voluntary contributions for the past few years, as regional editors, are exemplary to the rest of us. Replacing them on the Newsletter Editorial Staff are Adam M. Conway, Francisco J. Garcia Sanchez and Mansun J. Chan, respectively, whose biographies follow. It is my pleasure to welcome them as new editors for the EDS Newsletter.

Adam Conway is a post doctoral re-search staff mem-ber in the Center for Meso, Micro and Nano tech-nology at Law-rence Livermore National Labora-

tory. His current research interests include novel materials and device structures for semiconductor radia-tion detectors and solar cells. Be-fore joining LLNL he graduated from the University of California, San Diego in 2006. His dissertation work, which was in collaboration with HRL

CONGRATULATIONS TO NEWLY APPOINTED EDS REGIONAL NEWSLETTER EDITORS

Ninoslav D. Stojadinovic

On Sunday, De-cember 14, 2008, at the Hilton San Francisco Ho-tel, the Electron Devices Society hosted its second GOLD event. The GOLD event was hosted in con-

junction with the IEEE International Electron Devices Meeting (IEDM). The theme of the event was career devel-opment and networking. The event was well attended by many GOLD members and students, along with many EDS AdCom members. The event began with an invited seminar by Sheila Penelope Thorne from IBM. She presented a very interesting talk entitled, “Do as I say; not as I did - Lessons in career management”. Her main message from the talk is best summarized in her own words in her abstract; ‘There are books written and lectures on how to be success-ful. There are lots of hints and tips on

how to get ahead. This session takes a different approach. What not to do. Frankly, I’m an old techie. Because of a long history and good memory, I can look back and have a strong de-sire to kick myself about some of my career blunders, laugh about some career floundering and be thankful for some people along the way who saw fit to help me out. My career doesn’t have a blooper reel. I can’t edit out my top five career limiting moves. What I have done is created a lessons learned - reusable asset. I can share what I have experienced. After all, I am not so unique that something in my top list of don’ts will not resonate with you or someone you are trying to coach or mentor”.

At the conclusion of this session, participants had a good view of:

An awareness of career derailers• An overview for defining suc-• cessful career nichesIdeas on managing a career • The seminar was followed by a

panel discussion. The panel included

some of the EDS AdCom members. The panelist represented a good mix of different career options. Each of the panelists talked about the changes in their career and gave an insight on the pros and cons of a career option from their experience. They also an-swered questions from the audience. The event was followed by a network-ing reception and a dinner. At the net-working reception young engineers and students got an opportunity to interact with EDS AdCom members.

With the initial feedback that I re-ceived during and after the event, I am confident that this was a great success and we do intend to enhance this pro-gram for this year. If you attended this program and do have any suggestions and or comments, please do not hesi-tate to contact me at [email protected].

Ravi M. TodiIEEE GOLD Committee Representative

IBM Semiconductor Research and Development Center

East Fishkill, NY, USA

REPORT ON THE 2ND ANNUAL EDS GOLD EVENT

Ravi M. Todi


Laboratories, LLC, contributed to novel characterization and model-ing techniques for RF and millime-ter wave GaN based heterostructure field effect transistors, as well as reli-ability measurements and physics of failure in these devices. His expertise includes semiconductor device phys-ics, compact modeling, device simu-lation, electrical characterization and processing of semiconductor materi-als and devices. He is the author or co-author of over 30 journal papers and conference presentations and 1 patent in the area of semiconductor devices.

Francisco. J. García

Sánchez is a re-search professor at Universidad Simón Bolívar, Venezuela. His main interest is semiconductor device modeling, especially field ef-

fect devices. He regularly serves as

reviewer for specialized journals, and is active in editorial boards, and in the organization of conferences. Prof. García Sánchez has received several awards for excellence in research. He is an EDS Distinguished Lecturer since 2003, and in 2007 he was conferred the title of “Emeritus Professor.” He is the former Venezuela EDS Chapter chair-person, and was a member of IEEE´s Graduate and Undergraduate Teach-ing Awards Committee. Recently he concluded his second term as elected EDS AdCom member. Presently, he is a member of EDS Master/PhD Student Fellowships Subcommittee, and is vice-chair of EDS Regions & Chapters Subcommittee for Latin America.

Mansun J. Chan

received his Ph.D. from the Univer-sity of California at Berkeley. He is now with the Department ofElectronic and

Computer Engineering of the Hong Kong University of Science and Tech-nology. His research interests in-clude nano-devices, sensor circuits, 3D integration, device modeling and BioNEMS. In 2001 and 2002, he was a Visiting Professor at University of California at Berkeley and the Co-di-rector of the BSIM program.

Prof. Chan has been actively in-volved in the activities of IEEE Elec-tron Devices Society. He is currently an AdCom member, a Distinguished Lecturer and a member of the Com-pact Modeling Technical Committee.

Once again, I thank the outgoing editors for their dedicated service to the Newsletter and welcome the new editors and wish them all suc-cess. Please contact your respec-tive Regional Editor directly with news items.

Ninoslav D. StojadinovicEDS Newsletter Editor-in-Chief

University of NisSerbia

EDS Distinguished Lecturers, Supri-yo Bandyopadhyay and M. Jagadesh Kumar, visited the ED Bangladesh Chapter to attend the Society spon-sored mini-colloquium and pres-ent their talks. This EDS sponsored event was held in conjunction with the International Conference on Electrical and Computer Engineer-ing (ICECE), in Dhaka, Bangladesh, December 20–22, 2008. Nearly 250 papers were presented in oral ses-sions at the conference.

The mini-colloquium program comprised of two EDS Distin-guished Lectures by Prof. Supriyo Bandyopadhyay (Virginia Common-wealth University, Virginia, USA) and Prof. M. Jagadesh Kumar (Indian Institute of Technology, Delhi, India). Prof. Bandyopadhyay spoke on “Sin-

gle Spin Logic: Perpetuating Moore’s Law Beyond 2020” and Prof. Kumar on “Nanowire Electronics: Critical

Issues and Prospects”. Both lecturers were hosted by Prof. Anisul Haque of East-West University at Dhaka, who chairs the ED Bangladesh Chapter.

Prof. Bandyopadhyay also visited the EDS chapter at Jadavpur Univer-sity, Kolkata, India, on December 22, 2008 and presented a lecture titled “Single Spin Logic”. The lecture was attended by students and faculty from the Department of Electrical and Tele-communications Engineering at Ja-davpur University. Prof. Bandyopad-hyay was hosted by Prof. Subir Kumar Sarkar and Prof. Chandan Sarkar, fac-ulty of Jadavpur University.

Supriyo BandyopadhyayVirginia Commonwealth

UniversityRichmond, VA, USA

EDS DISTINGUISHED LECTURERS VISIT CHAPTERS IN BANGLADESH AND INDIA

From left: Prof. Safet Jehangir, Prof. Jagadesh Kumar, Prof. Supriyo Bandyopadhyay, Prof. Anisul Haque and Prof. Haroun-al-Rashid at the EDS Mini-colloquium organized by the

Dhaka, ED Bangladesh Chapter and held as a part of the International Conference on Electrical and Computer Engineering


EDS DISTINGUISHED LECTURERS PARTICIPATE IN THE 16TH WIMNACT-CHINA

An EDS Mini-colloquium was held in October by a delegation of Soci-ety members in Changchun, Dalian and Shenyang, China. The event was held after the 2008 ICSICT conference in Beijing, China. Prof. Cor Claeys of IMEC, EDS President,

Dr. Hsing-Huang Tseng of SEMAT-ECH, IEEE EDS Fellow, Prof. Parhat Ahmet of Tokyo Institute of Technol-ogy, IEEE EDS Senior Member, Prof. Hiroshi Iwai of Tokyo Institute of Technology, EDS Senior Past Presi-dent, attended the delegation.

The following EDS Distinguished Lectures (DLs) were presented at three separate locations from October 24 to 28, 2008:

WIMNACT in Changchun was held at the Changchun University of Science and Technology (CUST), October 24, 2008. Prof. Tain Jingquan of CUST arranged the meeting and colloquium. The delegation met Prof. Yu Huadong, President, Prof. Sun Weizhi, Vice President, Dr. Zhou Qingcai, Director Internal Exchange and Cooperation Division, and Prof. Lu Jun, and Dr. Zhang Fendong and others, to have a discussion for future exchange and collabo-rations. Prof. Iwai, Dr. Tseng, and Prof. Claeys gave DLs entitled, “Past and future for micro- and nano-electronics, focusing on Si in-tegrated circuits technology”, “The Challenges and Research Opportu-nities for Scaled CMOS Gate Stack Technology“, and “Processing and Defect Control of Advanced Ge De-vices“ respectively.

WIMNACT in Dalian was held at the Dalian University of Technology (DUT), October 27, 2008. Prof. Tang Zhenan, Director of the Institute of Microelectronics (DUT) and Chair of the ED Dalian Chapter arranged the meeting and colloquium. The delegation met Prof. Ou Jinping, President, Prof. Zhong Chonquan, Vice Dean, Prof. Chen Hongjun, Deputy Director of Internal Office, Prof. Yang Wenxhao, Prof. Wang Dejun, and oth-ers to have a discussion for future ex-change and collaborations. Prof. Iwai, Prof. Claeys, and Dr. Tseng gave DLs entitled, “Technology Scaling and Roadmap for 22 nm CMOS logic and beyond”, “Status and Trends in Ge-Based Materials and Devices for Deep Submicron Technologies“, and “The Progress and Future Challenges of High-k/Metal Gate Stack for Advanced Technologies”, respectively.

WIMNACT in Shenyang was held at the Shenyang University

EDS Distinguished Lecturers, organizers and attendees of the mini-colloquium held at Dalian University of Technology (DUT)

EDS Distinguished Lecturers, organizers and attendees of the mini-colloquium held at Shenyang University of Technology (SUT)

EDS Distinguished Lecturers, organizers and attendees of the mini-colloquium held at Changchun University of Science and Technology (CUST)


of Technology (SUT), October 28, 2008. Prof. Wang Xibo, Deputy Sec-retary of the Communist Branch and Vice Dean of School of Infor-mation of Science and Engineer-ing, SUT, arranged the meeting and colloquium. The delegation met Prof. Yuan Weiqi, Dean, and

Dr. Yu Hua and others to have a discussion for future exchange and collaborations. Prof. Iwai, gave a DL entitled, “Future of NanoCMOS after Scaling Limit”

At the beginning of each event, Cor Claeys gave a brief talk on EDS and members of the delegation met

with the mini-colloquium organiz-ers and others to discuss future ex-changes and collaborations.

Cor L. ClaeysEDS President

IMECLeuven, Belguim

As the EDS Vice-President of Awards and a member of the IEEE Awards Board, I am often asked, “How can I improve my award nominations?” or, “What is the se-cret to the prepara-

tion of a winning nomination?” While it would be presumptuous of me to promise that the following ideas will result in a successful nomination, here are some that may help. Many of them may appear to be obvious, but it is surprising how many nominators neglect to consider these points.

The preparation of a good nomi-nation should not require lots of work, especially if you are very fa-miliar with the candidate and his/her achievements. A well written nomi-nation should not be lengthy. The best ones are concise and clearly ex-press the contributions of the nomi-nee. Based on personal experience, the most time consuming activity is the need to remind the authors of the extremely important supporting letters to prepare and submit their letters on schedule.

As the nominator, your most im-portant responsibility is to nominate a person who has made an important contribution to the field of interest covered by the award. Sadly, some nominators do not always take two simple steps: 1) Review the list of pre-vious recipients to obtain a benchmark for the quality of the contributions of these nominations, 2) Make sure that the contributions of your nominee

satisfy the description of the award. Sad to say, this is not always the case. It is not unusual to read a nomination of a person who has done outstand-ing work, but the work does not sat-isfy the description of the award.

Members of the award selection committees have expertise in the field covered by the award. They may even know the nominee and his/her work. It is not unusual for the chair of the se-lection committee to make a discrete inquiry with a person working in the field to get a more detailed assess-ment of the contributions claimed in the nomination. Put yourself in the position of a member of the selec-tion committee and ask yourself the question, “What information would I need to judge this candidate?” By the way, as a member of numerous se-lection committees, I have been im-pressed with how much time is spent in evaluating the contributions of all the candidates for an award. They are a conscientious group.

Now for the content of the write-up: Provide a specific, meaningful description of the candidate’s con-tributions. Don’t say something as, “He/she has done good work.” That is a worthless comment. To make a baseball analogy, this is equivalent to saying, “He is a good hitter.” A more meaningful phrase would be, “He hit 70 home runs last year.” This specificity is the most important information that you can provide in the nomination. Also, be specific in describing the impact of the con-tribution. For instance, what is the economic impact of the technologi-cal contribution? What is the profes-

sional impact? Is the contribution so fundamental that other workers in this field widely use it as the basis of their work? What is the impact on so-ciety? For instance, has it improved the health of countless people all over the globe? Again, specificity is the key point. Ask a colleague to do a critical review of your nomination. Make sure that your recommended citation is brief and contains a spe-cific description of the candidate’s contribution. In many cases, that is the first item that is read by a mem-ber of the selection committee – so, make a good first impression.

I find the selection of people to write meaningful supporting letters to be the most challenging part of the preparation of a good nomination. Make sure that these people are fa-miliar with the contributions of your candidate and that they support your nomination. Recently I read two so-called supporting letters, which stat-ed very clearly that the candidate did not deserve this award. Also, ask the author of a supporting letter to avoid just copying what you wrote in the nomination. The selection commit-tee treats these letters very seriously and expects the author of the letter to provide his personal perspective on the specific contributions of the candidate. It is a good idea to obtain supporting letters from the users of the technology that is the basis of the nomination. For instance, it is impressive to read a supporting letter that states that the technology described in the nomination is used to manufacture millions of dollars of product in his factory.

AWARDS – PREPARING A SUCCESSFUL NOMINATION

Alfred U. Mac Rae


2008 EDS DISTINGUISHED SERVICE AWARD

The IEEE Electron Devices Society is extremely proud of the services that it provides to its members. Its members generate the premier new developments in the field of elec-tron devices and share these results with their peers and the world at large by publishing their papers in EDS journals and presenting results in its meetings. This is a global activity that is effective because of the efforts of numerous volunteers. Many of these volunteers labor in relative obscurity, with their only reward being the sat-isfaction that they receive in being an important part of a successful organi-zation, namely of the IEEE Electron De-vices Society. They should be thanked. The 2008 EDS Distinguished Service Award was presented to Hiroshi Iwai at the IEEE International Electron De-vices Meeting in San Francisco, Cali-fornia, on December 15, 2008.

Hiroshi Iwai was born in Akabane, Tokyo, where the home of his ances-tors for tens of generations is located. He moved to Nagoya City with his family in his boyhood. After graduat-ing from Tokai High School, Nagoya, he came back to Tokyo, and received

bachelor and doctor degrees in en-gineering from the University of To-kyo. He joined Toshiba Corporation in 1973, and developed generations of memories from 1kbit period. In addition, he developed various new LSI technologies for Toshiba, such as Toshiba’s first NMOS, scalable BiCMOS, and RF-CMOS. He has also participated in the R&D of MOSFET down-scaling from the 8 micro- meter PMOS technology generation. In the early 1980’s, he was visiting Stanford University as a visiting scholar, where he worked with Professor Robert Dut-ton and Dr. Mark Pinto. In the early 1990’s, he led a team of advanced CMOS logic device in Toshiba, and de-veloped innovative technologies for sub-50 nm logic CMOS, such as resist ashing for smaller gate length, NiSi salicide, and tunneling gate oxide, which are the key technologies used for today’s logic CMOS products. He is now a professor of Frontier Research Center, Tokyo Institute of Technology, Yokohama, Japan. His current two major research areas are ultra-thin high-k/MG less than 0.5 nm EOT, and Si-nanowire FETs under a program of Ministry of Economy, Trade and In-dustry (METI), Japan, in addition with some of emerging technologies – plasma doping, Schottky barrier S/D junction, high-k on Ge/III-V and CNT/graphene. He has served as visiting and consultant professors of Asian universities, such as Indian Institute of Technology, Bombay, Huazhong University of Science and Technol-ogy, Lanzhou Jiaotong University, and Xinjiang University. He has co-authored more than 650 inter-national/domestic conference and journal papers. He has received the following awards: Nagoya Major

Award (1968), local commendation for invention from Japan Institute of Invention and Innovation (1990, 2005), Grand Prize of Nikkei BP Tech-nology Awards (1994), IEICE ES Elec-tronics Award (1998), JSAP Award for the best paper (2002), and Yamazaki- Teiichi Prize (2007).

He has been a member of IEEE EDS for 30 years and worked with the Society as an AdCom member for the past 15 years. He frequently visits lo-cal EDS chapters among the world to hold face to face meetings with EDS members to exchange opinions, con-tributing to new chapter formations in China, India and Latin America, where only a very small number of chapters had existed 15 years ago. The chap-ter visits were also good occasions to give Distinguished Lectures (DLs). He initiated an EDS mini-colloquium with DLs, named WIMNACT, with Professor Kwyro Lee and Professor James Kuo, who were also EDS AdCom members at that time. He worked with EDS Vice President of Publications, Professor Renuka Jindal, on a DVD archive of all the issues of Transactions on Elec-tron Devices (since 1954), Electron Device Letters (since 1980), and IEDM Digests (since 1955). This product is now available at a reasonable price for EDS members.

Hiroshi resides in Yokohama City with his wife, Ayari, a classical pianist, Yu, elder daughter, a kindergarten teacher, and Rei, younger daughter, a university student majoring in ar-chitecture design.

Louis C. ParrilloEDS Distinguished

Service Award ChairSpansion, Inc.

Sunnyvale, CA, USA

I encourage you to nominate a deserving contributor for one the many EDS or IEEE awards that are available to people in

our electron devices field. There are many such awards. I wel-come your feedback on the above suggestions.

Alfred U. Mac RaeEDS Vice-President of Award

Mac Rae TechnologiesBerkeley Heights, NJ, USA

Presentation of EDS Distinguished Service Award to Hiroshi Iwai, by EDS President, Cor

Claeys (left)


Description: Awarded annually to promote, recognize and support Early Career Technical Development within the Electron Devices Society’s field of interest

Prize: An award of US$1,000, a certificate; and if needed, travel expenses not to exceed US$1,500 for a recipi-ent residing in the US and not to exceed US$3,000 for a recipient residing outside the US to attend the award presentation.

Eligibility: Candidate must be an IEEE EDS Graduate of the Last Decade (GOLD) member at the time of nomi-nation and is making contributions in an EDS field of interest area. Nominator must be an IEEE EDS member. Previous award winners are ineligible.

Selection/Basis for Judging: The nominator will be required to submit a nomination package comprised of the following:

Nominating letter by an EDS member. This letter should contain, a maximum of two pages, such technical • information as appropriate, the nominee’s contributions, accomplishments and impact on the profession or economyA biographical description of the candidate • A minimum of two and a maximum of three letters of recommendation from individuals familiar with the • candidate’s technical contributions and other credentials, with emphasis on the specific contributions.

The basis for judging includes such factors as; the demonstration of field leadership in a specific area; specific technical contribution(s); impact on the profession or economy; originality; breadth; inventive value; publications; honors; and other appropriate achievements.

Schedule: Nominations are due to the EDS Executive Office 15 August each year. The candidate will be selected by the end of September, with presentation to be made in December.

Presentation: At the annual GOLD Lecture, which is held in conjunction with the IEEE International Electron Devices Meeting (IEDM) in December. The recipient will also be recognized at the December EDS AdCom Meeting.

Send completed package to: For more information contact:

IEEE Operations Center [email protected] Executive Office or visit: http://www.ieee.org/portal/pages/society/eds/awards/EDS Early Career Award early_career_award.html445 Hoes Lane, Piscataway, NJ 08854 USA

2009 IEEE EDS EARLY CAREER AWARD

CALL FOR NOMINATIONS


The 2008 J.J. Ebers Award, the pres-tigious Electron Devices Society award for outstanding technical contributions to electron devices, was presented to Dr. Mark R. Pinto of Applied Materials, Menlo Park, California, at the IEEE International Electron Devices Meeting in San Francisco, California, on December 15, 2008. This award recognizes Dr. Pinto “For contributions to widely applied semiconductor technology simulation tools”.

Mark Pinto was born in Somer-ville, New Jersey in 1959 and gained his first interest in the field of semi-conductors from his father, Dick, who started as an engineer at RCA and served as a long time industry executive. After receiving B.S. de-grees in Electrical Engineering and Computer Science from Rensselaer Polytechnic Institute, Mark went on to graduate work at Stanford

University, receiving an M.S. and Ph.D. under Professor Robert Dut-ton. In 1985, he joined Bell Labora-tories in the VLSI Device Department led by George Smith, eventually be-coming Director of the Silicon Elec-tronics Research Laboratory, which made many significant contributions to sub 0.25 micron CMOS. In 1997, he was named the CTO of Lucent Mi-croelectronics, later Agere Systems, where his responsibilities included IC and optoelectronic technologies as well as SoC design. Mark joined Applied Materials in 2004 as a Se-nior Vice President where he cur-rently serves as both the corporate CTO and the General Manager of the Energy and Environmental Solutions unit. As part of efforts to extend the company’s nanomanufacturing tech-nologies, he led the establishment of Applied’s rapidly growing solar business, recently recognized for its SunFab Production Line with the Wall Street Journal’s 2008 Technol-ogy Innovation Award.

Mark’s contributions to semi-conductor simulation began as a summer student at IBM Research where he performed the first de-vice simulations of CMOS latch-up that suggested suppression using thin epitaxial substrates. At Stanford, he developed the first general purpose 2D device simu-lator PISCES-II together with his colleague, Conor Rafferty. PISCES

became the industry standard de-vice simulator for over a decade and formed the basis of commer-cial simulators used until today. At Bell Labs, Mark led efforts to develop many enabling computa-tional models and algorithms that have been widely implemented. A key component of Mark’s work has been the application of computa-tionally efficient simulation to both understand and predict important aspects of phenomena over a wide range of applications – silicon, III-V and optoelectronics. Through his work, technology simulation was established as a fundamental tool underlying many generations of semiconductor technology.

Mark has authored or co-au-thored more than 150 journal and professional conference papers and has nine patents, including 2 semi-nal contributions on corner rounded isolation and secondary electron flash memory programming. He was named a Bell Labs Fellow, the com-pany’s highest technical honor, and is also a Fellow of the IEEE. Mark and his wife Cecilia live in Menlo Park, California, with their two very active sons, Alex (10) and Gregory (9) – all of whom are avid Red Sox fans.

Louis C. ParrilloEDS J.J. Ebers Award Chair

Spansion, Inc.Sunnyvale, CA, USA

2008 EDS J.J. EBERS AWARD WINNER

The IEEE Electron Devices Society invites the submission of nominations for the 2009 J.J. Ebers Award. This award is presented annually for outstanding technical contributions to electron devices. The recipient(s) is awarded a certificate and a check for $5,000, presented in December at the IEEE International Electron Devices Meeting (IEDM).

Nomination forms can be requested from the EDS Executive Office (see contact information on page 2) or is available on the web at www.ieee.org/eds/. The deadline for the submission of nominations for the 2009 award is 1 July.

2009 EDS J.J. EBERS AWARD CALL FOR NOMINATIONS

Mark R. Pinto receiving award from EDS President, Cor Claeys


The EDS Education Award recog-nizes an IEEE/EDS Member from an academic, industrial, or govern-ment organization with distinguished contributions to education within the fields of interest of the IEEE Elec-tron Devices Society. The 2008 award was presented to Robert W. Dutton of Sanford University, Stanford, Califor-nia, at the IEEE International Electron Devices Meeting in San Francisco, California, on December 15, 2008. The award cites Professor Dutton “For distinguished contributions to all lev-els of university education in process, device and circuit simulations for the semiconductor industry”

Robert W. Dutton attended the University of California, Berkeley, where he received the B.S., M.S. and Ph.D. degrees in Electrical Engineer-ing. He has been at Stanford Univer-sity since 1971, most recently serv-ing as Director of Research at the Center for Integrated Systems (CIS)

from 1992-2004 and presently as the Director of the Integrated Circuits Laboratory (ICL) within the Electrical Engineering Department. He is the Robert and Barbara Kleist Professor of Engineering and holds numerous awards recognizing his pioneering contributions in the field of model-ing and simulation of IC processes, devices and circuits: IEEE J.J. Ebers Award (1987), IEEE Jack A. Morton Award (1996), C&C Prize (Japan, 2000), SIA University Researcher Award (2005), and the EDAC Philip Kaufman Award (2006). He is a Fellow of IEEE and member of the National Academy of Engineering.

His research has focused on com-puter simulation of integrated circuit technology, including: models of the IC fabrication processes (SUPREM); electrical behavior modeling of de-vices (PISCES) and circuit-oriented modeling for SPICE. The simula-tion tools pioneered by his research group have been universally adopt-ed by industry, used prolifically in support of technology scaling over the past three decades and have provided a computational backbone for academic research and teaching. These contributions have been semi-nal in helping to establish the field of technology computer-aided design (TCAD) and in promoting its broad application as reflected through commercial integration within EDA vendor tool sets, international con-ferences, and in academia.

Industrial interactions and sabbaticals have provided essential motivation and applications for his research and teaching: Fairchild R&D (1967), Bell Labs (1972), IBM (1977), Hewlett-Packard (1975) and Matsu-shita (1988-89). He currently serves on several technical advisory boards for leading electronics manufactures, re-search institutes, and as a board mem-ber of public and private companies.

He teaches both graduate and undergraduate courses that span the areas of circuits, devices and mod-eling. He has been thesis advisor for more that than 100 doctoral candidates—graduates that now hold key positions in industry, gov-ernment, and academia worldwide. His favorite teaching venue now focuses on undergraduate classes, especially in the analog and RF com-munications circuits domains.

He lives with his wife Carol in Palo Alto, California, and they enjoy international travel experiences as well as a sabbatical year in Japan (1988-89) with their children Susan and Jordan. Bob’s hobbies include: gardening, woodworking projects, fly fishing in the Sierra Nevada while on backpacking trips, as well as longer cross-country walks—most recently in England and Ireland.

Cary Y. Yang2008 EDS Education Award Chair

Santa Clara UniversitySanta Clara, CA, USA

2008 EDS EDUCATION AWARD WINNER

Cor Claeys, EDS President (left) presenting EDS Education Award to Robert W. Dutton

The IEEE Electron Devices Society invites the submission of nominations for the 2009 Education Award. This award is presented annually by EDS to honor an individual(s) with distinguished contributions to education within the fields of interest of the IEEE Electron Devices Society. The recipient is awarded a certificate and a check for $2,500, presented at the IEEE International Electron Devices Meeting (IEDM).

Nomination forms can be found on the EDS web site at http://www.ieee.org/portal/pages/society/eds/awards/EDS_Education_Award.htmlor can be requested from the EDS Executive Office via, telephone (+1 732 562-3927); fax (+1 732 235-1626); or e-mail ([email protected]).

The completed nomination form should be sent to:IEEE Operations Center, Attn: Laura Riello, 445 Hoes Lane, Piscataway, NJ 08854 USA

The deadline for the submission of nominations for the 2009 award is 1 September 2009.

2009 EDS EDUCATION AWARDCALL FOR NOMINATIONS


The IEEE EDS approved the estab-lishment of the Electron Devices Society Masters Student Fellowship Program. The Program is designed to promote, recognize, and support Masters level study and research within the Electron Devices Society’s Fields of Interest.

In July 2008, EDS announced the winners of the 2008 Fellowships’. The four winners were: Blerina Aliaj, University of Central Florida; Daniel Camacho, Southern Methodist Uni-versity; Jiale Liang, Stanford Uni-versity; and JianQiang Lin, National University of Singapore. The winners are pursuing distinctly different re-search topics in electron devices for their Masters degrees. The following are brief progress reports provided by the award winners.

Blerina Aliaj is continuing to pur-s u e h e r M . S . degree in Micro-electronics at the University of Cen-tral Florida and soon applying to the PhD program.

She is continuing her research in the area of Electrostatic Discharge (ESD) protection in collaboration

with National Semiconductor in Santa Clara, CA. Main topic of re-search is ESD device protection performance dependence on layout design and on fast methods of TCAD simulation for devices that occupy a large area.

Daniel Camacho

continues pursu-ing his M.S. de-gree in Electrical Engineering at Southern Meth-odist University in Dallas, Texas. His research is

focused on high performance An-alog and Mixed Signal Circuits design. Particularly he has been working in integrating the high volt-age transmitter front end circuitry for medical ultrasound imaging systems as his MS Thesis. He also has also been working in a fully on-chip low Dropout voltage regulators, he is preparing papers on both topics.

Jiale Liang is con-tinuing pursuing her M.S. degree in Electrical Engi-neering at Stan-ford University and beginning to work on the three-dimensional (3D)

stacking of cross-point memory, like phase change memory (PCM) and resistive random access mem-ory (RRAM). Three basic areas for her current research on novel non-volatile memories are: 1. Selection device fabrication and characteriza-

tion, 2. Cell physics study and pro-gramming current reduction, and 3. High density 3D array fabrication and technology. Besides this, for her past work on the modeling of carbon nanotube, we have several papers published.

JianQiang Lin is presently tackling mainly two chal-lenges for VLSI device – the maxi-mum saturated d r a i n c u r r e n t by transport en-hancement such

as strain-silicon and III-V transistor, and the non-scalability of MOSFET subthreshold slope by novel device operations such as I-MOS and T-FET. He was the author or co-author of more than 10 papers in international journal and conference on those top-ics. In 2008, he focused on the III-V MOSFET for high performance logic application, and presented his works in SSDM (Tsukuba, Japan) and IEDM (San Francisco, America).

The IEEE EDS is proud to support Engineering Education in Electron Devices world-wide.

Paul K.L. YuEDS Vice-President of Educational Activities

University of California at San DiegoLa Jolla, CA, USA

Agis A. IliadisEDS Masters Student

Fellowship ChairUniversity of MarylandCollege Park, MD, USA

Paul K.L. Yu Agis A. Iliadis

STATUS REPORT FROM THE 2008 EDS MASTERS STUDENT FELLOWSHIP WINNERS


Description: One year fellowships awarded to promote, recognize, and support PhD level study and research within the Electron Devices Society’s field of interest: The field of interest for EDS is all aspects of engineering, physics, theory, experiment and simulation of electron and ion devices involving insulators, metals, organic materials, plasmas, semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific appli-cations of these devices include bioelectronics, biomedical, computation, communications, displays, electro and micro mechanics, imaging, micro actuators, optical, photovoltaics, power, sensors and signal processing.

It is expected that six fellowships will be awarded, with the intention of at least one fellowship being given to eligible students in each of the following geographical regions every year: Americas, Europe/Middle East/Africa, and Asia & Pacific. Only one candidate can win per educational institution.

Prize: US$5,000 to the student and if necessary funds are also available to assist in covering travel and accom-modation costs for each recipient to attend the IEDM for presentation of the award plaque. The EDS Newsletter will feature articles about the EDS PhD Fellows and their work over the course of the next year.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be pursuing a doctorate degree within the EDS field of interest on a full-time basis; and continue his/her studies at the current institution with the same faculty advisor for twelve months after receipt of award. Sponsor must be an IEEE EDS member. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform independent research in the fields of electron devices and a proven history of academic excellence.

Nomination Package:

Nominating letter by an EDS member• Two-page (maximum) statement by the student describing his or her education and research interests, • accomplishments and graduation dateOne-page biographical sketch of the student (including student’s mailing address and e-mail address) • One copy of the student’s under-graduate and graduate transcripts/grades. Please provide an explanation of • the grading system if different from the A-F format.Two letters of recommendation from individuals familiar with the student’s research and educational • credentials. Letters of recommendation can not be from the nominator.

Timetable:

Nomination packages are due at the EDS Executive Office no later than May 15, 2009• Recipients will be notified by July 15, 2009• Monetary awards will be given by August 15, 2009• Formal presentation of the awards will take place at the IEDM Awards Ceremony in December 2009.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the • EDS Office.

Send completed package to: For more information contact:

IEEE Operations Center [email protected] Executive Office or visit: http://www.ieee.org/society/eds/education/fellowship.xmlEDS PhD Student Fellowship Program445 Hoes Lane, Piscataway, NJ 08854 USA

2009 IEEE EDS PHD STUDENT FELLOWSHIP

FINAL CALL FOR NOMINATIONS


33 EDS MEMBERS ELECTED TO THE IEEE GRADE OF FELLOW

EFFECTIVE 1 JANUARY 2009

Yves Baeyens, Bell Laboratories, Alcatel-Lucent, Murray Hill, NJ,USAfor contributions to the broadband and millimeter-wave circuits for optical and wireless communications

Rashid Bashir, University of Illinois at Urbana- Champaign, Champaign, IL, USAfor contributions to development of micro-systems and nanotechnology for medical applications

Aleksander Braginski, Research Center Juelich, Juelich, Germanyfor leadership in research and development in magnetics and applied superconductivity

Cor Claeys, IMEC, Leuven, Belgiumfor contributions to semiconductor device physics, defect engineering, and low frequency noise character-ization

Vikram Dalal, Iowa State University, Ames, IA, USAfor contributions to thin-film photovoltaic energy con-version materials and devices

Nicholas Economou, Carl Zeiss SMT, Inc., Peabody, MA, USAfor leadership in developing and commercializing focused ion beam systems

Tahir Ghani, Intel Corporation, Hillsboro, OR, USAfor contributions to deep submicron metal oxide semiconductor transistor development for micro-processors

Joe Jensen, HRL Laboratories, LLC., Malibu, CA, USAfor contributions to high-speed analog-digital converter and high-speed digital integrated circuit design

Shoji Kawahito, Shizuoka University, Shizuoka, Japanfor contributions to sensor interfacing, sensor signal pro-cessing and multiple-level signaling

Gregory Kovacs, Stanford University, Stanford, CA, USAfor contributions to fabrication and use of biosensors for medical, environmental and space applications

Andrea Lacaita, Politecnico di Milano, Milano, Italyfor contributions to modeling of single-photon avalanche-diodes and non-volatile memory devices

Ching-Ting Lee, National Cheng Kung University, Tainan, Taiwanfor contributions to galium nitride- based optoelectronic and electronic devices

Konstantin Lukin, National Academy of Sciences of Ukraine (IRE NASU), Kharkov, Ukrainefor contributions to research in noise and chaotic wave-form radars

Jose Maiz, Intel Corporation, Hillsboro, OR, USAfor contributions to reliability of high performance mi-croprocessors

Timothy Maloney, Intel Corporation, Palo Alto, CA, USAfor contributions to electrostatic discharge protection of semiconductor components

Homer Mantooth, University of Arkansas, Fayetteville, AK, USAfor contributions to modeling of power electronic devices

Joe McPherson, Silicon Technology Development, Dallas, TX, USAfor contributions to reliability physics and engineering and application to integrated circuits

Takashi Mizutani, Nagoya University, Nagoya, Japanfor contributions to device physics, nanostructures and heterostructure devices

Mehmet Ozturk, North Carolina State University, Raleigh, NC, USAfor contributions to silicon and silicon-germanium epitaxy in complementary metal-oxide semiconductor integrated circuits

Matthias Passlack, Freescale Semiconductor, Inc, Chandler, AZ, USAfor contributions to III-V metal-oxide-semiconductor technology

Raymond Quere, XLIM, Cedex, Francefor leadership in device characterization and computer aided design microwave engineering

Mark Reed, Yale University, New Haven, CT, USAfor contributions to nanoscale and molecular-scale electronic devices


Adam Skorek, University of Quebec at Trois-Rivieres, Trois-Rivieres, Canadafor contributions to electro-thermal analysis of industrial processes

Lisa Su, Freescale Semiconductor, Austin, TX, USAfor leadership in semiconductor technology development

Richard Swanson, SunPower Corporation, San Jose, CA, USAfor invention of the point contact solar cell and contribu-tions to its commercial applications

William Tonti, IBM Corporation, Essex Junction, VT, USAfor contributions to semiconductor memory reliability

Robert Wallace, University of Texas at Dallas, Richardson, TX, USAfor contributions to high-k gate dielectric materials for integrated circuits

Albert Wang, University of California, Riverside, Riverside, CA, USAfor contributions to design-for-reliability and system- on-chip

Richard Withers, Varian Inc., Sunnyvale, CA, USAfor development of superconductive and cryogenic radio frequency circuits for nuclear magnetic resonance probes

Robert York, University of California at Santa Barbara, Santa Barbara, CA, USAfor contributions to ferroelectric devices, power ampli-fiers and phased array systems

Zhiping Yu, Tsinghua University, Beijing, Chinafor contributions to modeling and simulation of advanced semiconductor devices

Enrico Zanoni, Universita’ di Padova, Padova, Italyfor contributions to reliability of compound semiconduc-tor devices

John Zolper, Raytheon, Vienna, VA, USAfor leadership in compound semiconductor electronics

Hiroshi Iwai2009 EDS Fellows Chair

Tokyo Institute of TechnologyYokohama, Japan

2008 CLASS OF EDS FELLOWS HONORED AT IEDM

On December 15, 2008, at the Plenary session of the IEEE International Elec-tron Devices Meeting (IEDM) in San Francisco, California, EDS President, Cor Claeys, presented a number of 2008 IEEE/EDS Fellows with certifi-cates to congratulate them on be-ing elected IEEE Fellows. Seventeen of the 33 EDS members elected to the IEEE grade of Fellow for 2008, attended the presentation.

EDS President, Cor L. Claeys (2nd from left, back row), along with 17 EDS members who were elected IEEE Fellow for 2008


R E G I O N A L A N D C H A P T E R N E W S

ICSI-6

- by Matthias BauerThe 2009 International Conference on Silicon Epitaxy and Heterostruc-tures (ICSI) is the 6th of the bian-nual conference series that brings together researchers from all over the world on subjects ranging from crystal growths, processing, nano-structures, characterization tech-niques, electronic transport studies, to electronics and optoelectronic device applications. Historically, the conference series has been well rep-resented by participants from the industry as well as academia. While the emphasis has been on Si-based heterostructures, new topics includ-ing carbon electronics and spintron-ics will be represented in ICSI-6.

The conference this year will be held from May 17-22, 2009, at the Ayres Hotel, Manhattan Beach, California, in the greater Los Angeles metropolitan area and close proximity to the south-ern California coast. For more infor-mation, please visit the conference website at www.icsi-6.org .

~ Adam M. Conway, Editor

ED Poland

- by Zygmunt Ciota The ED Poland Chapter is co- organizing the 16th International Conference MIXDES 2009 “Mixed Design of Integrated Circuits and Systems”, which will be held June 25-27, 2009, in Lodz, Poland.

During the conference, four spe-cial sessions are planned:

“Device level support for emerg-• ing CMOS technologies” orga-nized by Dr. Daniel Tomaszewski (Inst. of Electron Techn., Poland) and Dr. Władysław Grabinski (GMC Suisse, Switzerland) “EuCARD - European Coordina-• tion for Accelerator Research and Development” organized by Dr. Stefan Simrock (DESY, Germany) and Dr. Dariusz Makowski (Tech-nical University of Lodz, Poland) “PERPLEXUS - Bioinspired Comput-• ing Framework for Modeling Com-plex Virtually-unbounded Systems” organized by Dr. Rafał Kiełbik (Tech-nical University of Lodz, Poland) “The Future of Mobile and Em-• bedded Systems” organized by Dr. Bartłomiej Swiercz (Teleca Po-land sp. z o.o. and Technical Uni-versity of Łódz, Poland)For the opening, the following

presentations are planned:“Introduction to Self-Organizing • Fault-Tolerant Chips in Massive-ly Defective Nanotechnologies” - Jacques Collet (LAAS and Toulouse University, France), Piotr Zajac and Andrzej Napieralski (Technical University of Lodz, Poland) “130 nm SiGe BiCMOS T• echnology for mm-Wave Mixed-signal Applications” - Holger Rücker, Bernd Heinemann, Andreas Mai and Bernd Tillack (IHP GmbH, Germany) “Virtual Experiments at the • Rim of the Safe-Operating Area of Power Devices” - Gerhard Wachutka (Technische Univer-sität München, Germany)

During the conference the meet-ings of the IEEE ED Poland Chapter and the Microelectronics Section of Electronics and Telecommunication Committee of the Polish Academy of Sciences will take place.

More information can be found on the conference web site, http://www.mixdes.org.

~ Zygmunt Ciota, Editor

ED Beijing

- by Jinjun FengOn December 10th, IEEE Fellow, Prof. Neville Luhmann of the University of California at Davis, visited the ED Bei-jing Chapter. The Vice Chair and Trea-surer of the chapter, Dr. Jinjun Feng, hosted the visit. Prof. Luhmann de-livered a lecture on the topic of “Mil-limeter wave and teraherts vacuum electronics and microfabrication”. In his talk, he introduced the applica-tion of millimeterwave and terahertz wave in spectroscopy, imaging, at-mosphere detection, astronomy and high speed communication, the prosperous future of terahertz power vacuum sources, and the definition of terahertz wave of above 100GHz. He also analyzed the possible vacu-um devices and relevant techniques, such as power TWTs, BWOs, regener-ative folded waveguide SWS source, staggered vane-loaded slow wave structure, sheet beam electron trans-mission system, microfabrication technologies and so on. After his talk,

EUROPE, MIDDLE EAST

& AFRICA (REGION 8)

SOUTHWESTERN & WESTERN USA

(REGIONS 5 & 6)ASIA & PACIFIC

(REGION 10)

Professor Neville Lumann (3rd from right, front row) and Dr. Jinjun Feng (2nd from right, front

row) with some of the staff and postgraduates of the Vacuum Electronics National Lab


Prof. Luhmann answered questions from the audience of the Vacuum Electronics National Lab (VENL) from the Beijing Vacuum Electronics Re-search Institute (BVERI). There were over 20 attendees comprised of staff, postgraduates, and Ph.D. candidates from the Vacuum Electronics National Lab (VENL). Prof. Luhmann also visit-ed the micro-fabrication lab of VENL.

EDSSC 2008

- by K. P. PunThe 2008 IEEE International Con-ference on Electron Devices and Solid-State Circuits (EDSSC 2008), organized by the ED/SSC Hong Kong Chapter and sponsored by ASTRI, KC Wong Education Foundation and the Chinese University of Hong Kong, was held at the Renaissance Kow-loon Hotel, Hong Kong, December 8-10, 2008, and attracted over 100 participants from around the world.

The conference received 188 paper submissions from seventeen coun-tries or regions: Austria, Bangladesh, Canada, China, France, Hong Kong, India, Iran, Japan, Korea, Malaysia, Mexico, Philippines, Singapore, Tai-wan, Thailand and USA. After rigor-ous paper selection, the technical program co-chairs, Professors Man-sun Chan and W. T. Ng, assembled an outstanding program, consisting of 116 technical papers (including invit-ed papers), distributed over eighteen thematic oral sessions and one poster session. In addition, an industrial ses-sion was held on December 10th.

The highlights of the conference included two plenary talks by Dr. Ta-kayuki Kawahara and Dr. Ian Young on the topics of SPRAM technol-ogy for green-IT and clocking and analog circuits in high performance processors, respectively, and sixteen invited talks by Profs. Jamal Deen, Simon Deleonibus, Jin He, H. L. Hwang, Masaaki Kuzuhara, Eric Olli-er, Krishna Shenai, Siegfried Selber-herr, Zhihua Wang, Jason Woo, Cary Yang, Peide Ye, Bo Zhang and Yimen Zhang on timely and important top-ics in ED and SSC areas. The best cir-

cuit and device papers were award-ed to, respectively, “A 1-V, 81-dB, 780-KS/s, Sigma-Delta Modulator in 0.13-µm Digital CMOS Technology” by Yong Hong Tao and Libin Yao and “Scaling Analysis of Phase Change Memory (PCM) Driving Devices” by Lin Li and Mansun Chan.

The next EDSSC will be held in the ancient city of Xi’an, China, No-vember 25-27, 2009.

ED Peking University

- by Jing Zhuge and Runsheng Wang During October 20-23, 2008, the ED Peking University (PKU) Student Chapter put forth great efforts to help in the organization of the IEEE 9th

International Conference on Solid-State and Integrated-Circuit Technol-ogy (ICSICT 2008), held in Beijing, China. The chapter provided 50 stu-dent helpers and has been assisting with the conference preparation since July. During the event, the students helped with registration, short cours-es, technical sessions and logistics.

The ED PKU Chapter also held IC-SICT Student Night on October 20th, with the collaboration of the IEEE Cir-cuits and Systems Society (CASS). This event aimed to promote mutual communications between student attendees and provided a platform for discussions of their career strate-gy. It was included in the conference

Some members of the conference organizing committee(From left: P. Pong, A. Leung, M. Chan, H. Wong, K. Pun, P. Lai, T. Kok, N. Wong)

Some of the student helpers pictured with ICSICT General Co-Chair, Prof. Chenming Hu (6th from right), ICSICT Program Co-Chairs, Professors Hiroshi Iwai (4th from left), Ru Huang (5th

from left), Jason Woo (4th from right)


for the first time and also as one of the program highlights. During the event, CASS and EDS were intro-duced to the student attendees by Prof. Yong Lian (Vice-President of CASS) and Prof. Albert Wang (Vice-President of EDS), respectively, fol-lowed by a mini-seminar on career development strategies in today’s globally competitive world, a lucky draw time and a free buffet recep-tion. Over 200 students from all over the world attended Student Night and spent a pleasant time together.

In addition, the ED PKU Chapter hosted two EDS Distinguished Lec-turer (DL) talks recently. On October 24th, EDS Vice-President of Education, Prof. Paul K.L. Yu from the University of California, San Diego, gave a distin-guished lecture entitled “Optical Mod-ulators for Analog Fiber Link”. Prof. Yu gave an overview of the require-ments of the photonic components in applications and the advances in the

state-of-the-art optical modulators for analog fiber links, with the emphasis on semiconductor electro-optic and electroabsorption modulator espe-cially with nanowires and nanotubes as the material structures. After his talk, Prof. Yu discussed with chapter members his research experience and EDS education efforts. Another DL talk, entitled “CMOS Device and Circuit Reliability”, was given by Prof. Jiann-Shiun Yuan from University of Florida on December 17. Prof. Yuan discussed device physics, modeling, characterization and circuit simula-tion on the reliability issues of nano-scale MOS transistor such as hot car-rier injection effect, time- dependent dielectric breakdown, and negative-bias-temperature instability on CMOS digital and RF circuit performances. Students also had helpful discussions with Prof. Yuan after his talk.

For more details of these activi-ties, please kindly visit the Chapter’s

website at http://www.ime.pku.edu.cn/soi/edpku.

ED Taipei

- by Steve ChungThe ED Taipei Chapter held two talks during the 4th Quarter of 2008, with one of them by an invited EDS Dis-tinguished Lecturer. On November 18th, Dr. Rakesh Kumar, an EDS Distinguished Lecturer, gave a talk on “Fabless Industry Experience“. Dr. Kumar spoke to an audience of mostly graduate students, about his experience of starting and running a fabless company. He mentioned that usually less than 10% of start-up companies have a success in business, naming five reasons why most of them are not successful and shared this with our young genera-tion. Approximately 150 graduate students from local universities and several engineers from the Science Park attended.

On November 20th, Prof. Jing-Feng Kang of Peking University was invited to give a lecture entitled “Research Activities of IMEPKU in Resistive-RAM and Other Selected Topics”. Prof Kang addressed recent progress on the research of RRAM, in which the understanding of physi-cal mechanisms are still not matured yet and more effort is needed to work on materials and processes. This talk was attended by 40 participants, in-cluding students and professors from local universities.

One of the forthcoming events, the IEEE and EDS co-sponsored In-ternational Symposium on VLSI Technology, Systems, and Applica-tions (VLSI-TSA), will be held April 27–29, 2009, at the Ambassador Hotel, Hsinchu. The symposium program will cover two-and-half days of technical sessions includ-ing three plenary talks, two special sessions focusing on Green Devices and Next Generation Lithography, a number of contributed paper ses-sions followed by a half-day short course. Starting in 2006, the VLSI-TSA was split into two symposia,

Left Photo: Attendees of the ICSICT Student Night. (2nd right is Prof. Yong Lian, IEEE CAS Vice-President.) Right Photo: Mr. Runsheng Wang (1st from right), ED PKU Chapter Chair, moderating the lucky

draw time in the Student Night with a student helper (2nd from right)

Prof. Jiann-Shiun Yuan (5th from right) pictured with some members of ED PKU Student Chapter after his Distinguished Lecturer talk


VLSI-TSA and VLSI-DAT, which have become an annual weeklong event. VLSI still keeps the tradition, focus-ing on semiconductor manufac-turing and VLSI technology, while VLSI-DAT is related to the circuits and systems design. The two sym-posia together attracted more than 1000 attendees in 2008.

It is worthwhile for our members to join the VLSI-TSA technical pro-grams as well as the technical and culture tours, to experience the most vital and vibrant science park at the heart of the world’s semiconductor and information industry.

For 2009 VLSI-TSA registration de-tails, please visit the conference web-site at http://vlsitsa.itri.org.tw/2009.

ED Xian

- by Yimen ZhangProf. Kevin J. Chen of Hong Kong University of Science and Technol-ogy, visited the ED Xian Chapter, November 12–14, 2008, and delivered a lecture entitled “Fluorine Plasma Ion Implantation (Treatment) Tech-nology: a New Dimension in GaN

Electronic Device Processing” in Xidian University, Xian, China. The DL talk was attended by more than 50 local professionals and students. This excellent lecture covered a comprehensive overview of the fluorine plasma ion implantation technology and its applications in AlGaN/GaN HEMTs. The most significant development based on this technology is the demonstra-tion of self-aligned enhancement-mode AlGaN/GaN HEMTs with low on-resistance. The reliability issues related to the fluorine plasma ion implantation were discussed based on results from stress test and mo-lecular dynamics simulation. Prof. Chen also met the Vice President of Xidian University, Prof. Yue Hao, and discussed research areas and issues regarding future collabora-tions. Both Prof. Yiqi Zhuang, Dean of the School of Microelectronics, and Prof. Yuming Zhang, Deputy Dean of the School and Chapter Chair of the ED Xian Chapter, at-tended the meeting.

~ Mansun Chan, Editor

ED Japan

- by Mitsumasa KoyanagiOn November 14, 2008, the IEEE EDS Japan Chapter Technology Fo-rum was held at Westin Hotel, Tokyo, which was sponsored by the Chapter and was also supported by Applied Materials. The title of the technology forum was “The Reality of 32 nm: Technology plus Manufacturability.”

The aim of the forum was to discuss both process/device technologies and manufacturability for 32-nm-node log-ic/memory LSIs. Nine distinguished speakers were invited from Japan and from abroad, and covered topics including NAND/NOR flash memory, lithography, advanced FEOL/BEOL technologies, and 3-D integration. All the speakers gave excellent talks and made fruitful discussions with the audience. The symposium attracted more than 200 people and was a great success.

ED Kansai

- by Michinori NishiharaThe 8th Kansai Colloquium Electron Devices Workshop was held success-fully at the Kansai University Cente-nary Memorial Hall, Osaka, Japan, on October 17, 2008, with 40 participants. The program was divided into three sections which reflected the most recent technical activities: (1) Silicon LSI Technology and Simulation, (2) Power Device, Nano Device and Pho-to Device Technology, and (3) MEMS, Memory, Sensor and Film formation Technology. Four or five papers for each section were specially selected and presented by researchers and developers from both industries and academia. These papers were se-lected from major technical journals and conferences of the past year by designated ED Kansai Chapter mem-bers. Thanks to the great efforts of the members, this workshop became a good review session of technical advancement in the Electron Devices area during the year.

The Award Committee of the workshop selected one outstanding

Some of the November 20th lecture attendees, with speaker, Prof. Jing-Feng Kang (5th from right) and ED Taipei Chapter Chair, Prof. Steve Chung (3rd from right)

Prof. Kevin J. Chen (4th from left), Prof. Yimen Zhang, ED Xian Chapter Chair (5th from left)

The IEEE EDS Japan Chapter Technology Forum held at the Westin Hotel, Tokyo, Japan


paper titled “8300 V Blocking Volt-age AlGaN/GaN Power HFET with Thick Poly-AlN Passivation” for the Chapter of the Year Award, which was granted to Dr. Daisuke Shi-bata of Panasonic Corp. Another outstanding paper was selected as the Student Award and the winner was Mr. Mario Kiuchi of Ritsumei-kan University, entitled “Mechani-cal Characteristics of FIB Deposited Carbon Nanowires Using an Electro-static Actuated Nano Tensile Testing Device”.

This workshop is a good example of the ED Kansai Chapter activities, which help to promote technical interactions between industries and academia and we will contin-ue our efforts to contribute to ED members.

ED Korea

- by Jong-Ho LeeOn November 6, 2008, the 13th annual joint Symposium between Peking University (China) and Kyungpook National University (Ko-rea) was held at the TEMF Hotel in Gyeong-Ju City, Korea. Gyung-Ju is very famous for its beautiful scenery and ancient cultural heritage, and has two world heritage sites desig-nated by UNESCO. This symposium is held alternatively in Korea and

China. This year, 21 papers and 2 tutorial talks were given in two con-ference rooms in parallel. All talks were mainly focused on semicon-ductor devices and bio signal pro-cessing. Nine professors from Peking University attended the symposium and 4 invited speakers from Seoul National University, Daegu Catholic University, and Samsung Electron-ics. One tutorial on “An overview of MEMS research in Peking Univer-sity”, was given by Prof. Yufeng Jin, the director of the National Key Lab-oratory of Micro/Nano Fabrication Technology and Prof. Guanglin Yang delivered the other tutorial, entitled “Application of digital holography.” Besides the high quality technical presentation and discussion, the symposium is generally flavored by a friendly atmosphere. Before the symposium, professors from Peking University visited the Center for Semiconductor Fusion Technology of Kyungpook National University and looked around the fabrication facility of a clean room, and enjoyed Korean food.

ED Yeongnam

- by Andy ChungThe ED Yeongnam Chapter (Chair: Prof Yoon-Ha Jeong, POSTECH), founded in December 2007, held a foundation members meeting in March, a mini-colloquia in May, and a DL lecture in August.

The inaugural mini-colloquia on “Nanotechnology and Nano Devic-es”, was held on May 14, at EXCO Conference Center in Daegu, Korea. There were five DL lecturers and invited speakers, Prof. Takao Som-eya of the Tokyo University (EDS DL), Prof. Moon-Ho Jo of POSTECH, Prof. Huei Wang of National Taiwan University (MTT-S DL), Prof. Juin Liou of University of Central Florida (EDS DL) and Prof. Jong Ho Lee of Kyungpook National University (KNU), delivered inspiring, excellent speeches. The speakers covered topics on “Organic transistor ICs”, “Semiconductor Nanowires”, “Si & compound MMICs”, “ESD protec-tion for nano CMOS” and “modeling of double gate and nanowire FETs”. About 100 attendees, consisting of

The 8th Kansai Colloquium Electron Devices Workshop held at the Kansai University Centenary Memorial Hall, Osaka, Japan

Key participants of the 13th PKU-KNU Joint Symposium held November 6, 2008, in Gyung-Ju City, Korea


professors and students, from the Daegu and Pohang area, attended the seminar.

In August, Dr. Meyya Meyyap-pan of Ames Research Center, NASA, gave a DL lecture on “Carbon Nanotube-based Nanotechnology”, on August 25, 2008, at POSTECH, Pohang, Korea.

Dr. Meyyappan provided an overview of topics on CNT proper-ties, growth techniques, patterned growth, vertical alignment, chal-lenges in controlling the diameter, chirality and characterization. He described applications to chemical and bio sensors in depth. The three hour lecture was attended by about

60 students, POSTECH researchers and EDS chapter members.

May and August activities were sponsored by the National Center for Nanomaterials Technology (NCNT), Pohang.

~ Kazuo Tsutsui, Editor

ED Bangladesh

- by Anisul HaqueThe ED Bangladesh Chapter organized a mini-colloquium on Nanoelectronics on December 20, 2008 at the Dhaka Sheraton Hotel during the International Conference on Electrical and Computer Engineering (ICECE 2008). Professor Supriyo Bandyopadhyay of Virginia

Commonwealth University, USA, de-livered a talk on Single Spin Logic: Per-petuating Moore’s Law Beyond 2020. Professor M. Jagadesh Kumar of IIT, Delhi presented a talk on NanowireElec-tronics: Critical Issues and Prospects. The mini-colloquium was attended by more than 150 IEEE members and registered participants of ICECE 2008. The talks generated a lot of enthusi-asm among the audience which was indicated by the lively question and an-swer sessions. Professor Anisul Haque of East West University, Dhaka, chaired the mini-colloquium session.

Professor Chandan K. Sarkar of Jadavpur University, India, delivered a DL talk in BUET on December 23, 2008. The topic of his presentation was Improvement of Characteristics of Deep Submicron CMOS Devices with Halo Implantation & High K Dielectric.

The May 2008 mini-colloquium organizers and speakers, (from left to right) Professors Jinho Jo, Jinyong Chung, Jong Ho Lee, Juin Liou, Yoon-Ha Jeong, Huei Wang, Takao Someya, Moon-

Ho Jo, Jae Yoon Sim and Hoon-Kyu Shin

Dr. Meyyappan delivers a DL lecture on “Carbon Nanotube-based Nanotechnology” at

POSTECH, August 2008

Professor Supriyo Bandyopadhyay delivering his talk in the mini-colloquium on

Nanoelectronics in Dhaka

Professor Chandan Sarkar (third from left) with volunteers from the ED Bangladesh Chapter after his Distinguished Lecture in Dhaka


The talk was attended by around 30 students and faculty members.

Professor Anisul Haque of East West University, Dhaka gave a talk on Nanoelectronic Devices: Past, Present & Future Trends at the United International University (UIU), Dhaka, on October 23, 2008. More than 10 ED Bangladesh members and 70 students and faculty members of UIU were present at the talk.

ED Delhi

- by R. S. GuptaThe IEEE ED Delhi Chapter spon-sored and organized a three-day National Conference “Mathematical Techniques: Emerging Paradigms for Electronics and IT Industries” (MATEIT-2008), September 26-28, 2008, at Deen Dayal Upadhyaya Col-lege, University of Delhi. There were 26 invited talks and 67 technical re-search papers covering various fields of Mathematics, Information Tech-nology (IT), Electronics and Physics. Thirty-two technical papers were presented as Oral Presentations and 35 papers presented as Posters. On average, 150 delegates attended the conference daily.

Professor Chandan K. Sarkar, ETCE Department, Jadavpur Uni-versiy, Kolkata, India, delivered an IEEE Distinguished Lecture on “Modeling and Optimization of Gate Resistance in Dual Fin MOS Devices”, September 27, 2008. He reported the impact of the gate resistance on the characterization of FinFETs, which is important for scaling of CMOS technology in the nano regime. In the present work, he modeled the gate resistance of dual fin FinFETs as a function of geometrical parameters (fin spac-ing, width and height) of the fin. An effective lumped resistance model derived from the distributed RC network is modeled and verified using a 3D simulator. In this model, the gate resistance is minimized by tuning the geometrical parameters of fin suiting it for high frequency applications.

ICSE 2008

-by Badariah Bais and Sahbudin ShaariThe 2008 IEEE International Confer-ence on Semiconductor Electronics (ICSE 2008) was successfully held at the Persada Johor International Convention Centre, Johor Bahru, Malaysia, November 25–27, 2008. The conference was officiated by the Deputy Vice Cancellor (Academic & International) of the Universiti Teknologi Malaysia, YBhg. Prof Da-tin. Ir. Dr. Siti Hamisah Tapsir. The opening ceremony took place during the conference dinner. A total of 300 papers were received but only 145 papers were selected to be published in the conference proceedings.

In this conference, four very prominent members of the micro- and nanoelectronics community were invited to deliver the keynote papers. The first keynote speaker was Prof. Cary Y. Yang, from the Cen-ter for Nanostructures, Santa Clara, USA, who is also a Fellow of the IEEE and a past President of EDS. Prof. Yang spoke on Carbon-based Electri-cal Interconnect and Thermal Inter-face Materials. The second keynote speaker, Prof. Vijay K. Arora from the Division of Engineering and Physics at Wilkes University, USA, spoke on the Challenges and Opportunities of Quantum Nanoelectronics. The two other invited speakers, Assoc. Prof. Chim WK from the National

University of Singapore, gave a talk on Germanium Nanostructures for Electronic Memory Applications and Prof. John P. R. David from the University of Sheffield, UK, gave insights into Low Noise Avalanche Photodiodes.

This is the eighth ICSE organized by the Electron Devices Chapter of the IEEE Malaysia Section and is also technically co-sponsored by the Society. Over the last sixteen years, the ICSE has become the preeminent international forum on semiconductor electronics, embrac-ing all aspects of the semiconduc-tor technology from circuit device, modeling and simulation, photon-ics and sensor technology, MEMs technology, process and fabrica-tion, packaging technology and manufacturing, failure analysis and reliability, material and devices and nanoelectronics.

This conference is co-organized by the Institute of Microengineer-ing and Nanoelectronics (IMEN) of Universiti Kebangsaan Malaysia and in co-operation with Universiti Teknologi Malaysia.

In conjunction with the confer-ence, two tutorials were held No-vember 24, 2008. The first tutorial, Introduction to SPICE Models Ex-traction for Deep Submicron CMOS Transistor was presented by Dr. Philip Beow Yew of Silterra (M) Sdn. Bhd. The second tutorial on Quantum

Participants of the 2008 IEEE International Conference on Semiconductor Electronics (ICSE 2008)


Nanoengineering, was presented by Prof. Vijay K. Arora. A total of 30 participants attended both tutorials.

For more information, please con-tact Prof. Dr. Sahbudin Shaari, Institute of Microengineering and Nanoelec-tronics (IMEN), Universiti Kebangsaan Malaysia. Tel: 603-89216308, Fax 603-89259080, e-mail: [email protected], website: http://www.ukm.my/~imen.

ED/MTT/SSC Penang

- by Yut Hoong ChowThe Penang Joint Chapter formally included the Solid-State Circuits So-ciety into the chapter, whilst the An-tenna and Propagations Society was removed. This was done with the blessing of the committee as it was found that these societies were more

directly relevant to the practicing en-gineering community in the area. The chapter was blessed with 2 Distin-guished Lectures by Dr. Samar from Silterra, USA, and Prof. Cher Ming Tan from NTU, Singapore. Dr. Samar, currently Director of device design at Silterra, USA, and adjunct Professor at University of Santa Clara, delivered a EDS Distinguished Lecture on April 15, 2008. His lecture detailed the use of a simulation-based design meth-odology for sub-90nm split-gate flash memory cells. An interesting part of the talk addressed the optimization of cell performance within current known constraints of the technology.

Results from this methodology were verified by measurement data.

The second distinguished lecture was delivered by EDS Distinguished Lecturer, Prof. Cher Ming Tan on Sep-tember 23, 2008. Prof. Tan is pres-ently a faculty staff in the School of EEE in Nanyang Technological Uni-versity, Singapore, and adjunct se-nior scientist in SIMTech. His lecture clarified the differences between reli-ability and quality in today’s electron-ics products. Of particular relevance was the use of the different reliability tests and data analyses tools to sur-face the true reliability of a product. The lecture generated much interest, as was evidenced by the lively Q&A sessions during and after the lecture.

The Chapter would like to thank Dato’ Boonler Somchit for use of the facilities at PSDC, Penang and his continued support of our activities.

REL/CPMT/ED Singapore

- by Alastair TriggDecember saw the 10th anniver-sary of EPTC, one of our Chapter’s two flagship conferences. EPTC has grown rapidly since its beginning in 1997 when just 51 technical papers were presented. This year it features 50 technical sessions with over 250 paper presentations by researchers from 28 countries. There are 3 key-notes and a plenary session by 6 pio-neers from around the world. It now includes professional short courses and a technical exhibition.

The day began with a Lion Dance to celebrate the 10 year an-niversary followed by short open-

ing addresses by Dr. William Chen, President of CPMT, and Dr. Alastair Trigg, Chairman of the IEEE REL/CPMT/ED Singapore Chapter. The first keynote address was given by Dr. G. Q. Zhang, Senior Direc-tor of NXP Semiconductors, on the topic of the Changing International Landscape of semiconductors. This was an excellent review of the chal-lenges ahead as we move into the “More than Moore” era. In the sec-ond keynote, Prof. Michael Pecht of University of Maryland described different challenges, those of main-taining reliability in the face of ad-verse environmental conditions, increasing complexity, cost con-straints and shorter times to mar-ket. He explained how the solutions to these challenges lie in the use of prognostic based qualification test-ing, a concept new to most of the audience. In the third keynote, Prof. C. P. Wong of Georgia Tech, showed the potential of nano-particulate metals, nanocomposites and carbon nanotubes to revolutionise the ma-terials science of the semiconductor industry. EPTC has another two and a half days to run and if the first half day is a good indicator, it will be a great success.

In September, the chapter orga-nized a Workshop on “3-D Integra-tion of ICs – An Introduction” by Dr. Tan Chuan Seng. The topics covered include Introduction to Wafer Level 3-D Integration, Technology, Ex-amples of 3-D Processes and App-lications, Challenges, Status and Outlook.

In November, Dr. Rakesh Kumar gave a DL talk on “Successful Entre-preneurship in the Field of Fabless Semiconductors”. Definitely a “must hear” for anyone contemplating set-ting up as an entrepreneur.

The chapter’s next conference will be IPFA 2009, to be held in Suzhou, China in July. The deadline for ab-stracts was January 16, 2009, and more information can be found at the website http://www.ieee.org/ipfa.

~ Xing Zhou, Editor

Dr. Samar with a plaque of appreciation pre-sented by the chapter

Prof. Tan answering questions from the floor


THE COMPLETE EDS CALENDAR CAN BE FOUND AT OUR WEB SITE: HTTP://WWW.IEEE.ORG/SOCIETY/EDS/MEETINGS/MEETINGS_CALENDAR.XML PLEASE VISIT!

EDS MEET INGS CALENDAR(A S O F 6 F E B R U A R Y 2009 )

April 3, 2009, T IEEE Workshop on Micro-electronics and Electron Devices, Location: Boise Center on the Grove, Boise, USA, Con-tact: Shyam Surthi, E-mail: [email protected], Deadline: 1/26/09, www: www.ewh.ieee.org/r6/boise/wmed2009/WMED2009.html

April 20 - 21, 2009, T IEEE Wireless and Microwave Technology Conference, Lo-cation: Marriott Suites Sand Key, Clearwater, FL, USA, Contact: Xun Gong, E-mail: [email protected], Deadline: 9/15/08, www: www.wamicon.org

April 22 - 24, 2009, T International Confer-ence on Perspective Technologies and Methods in MEMS Design, Location: Poly-ana, Ukraine, Contact: Mykhaylo Lobur, E-mail: [email protected], Deadline: 2/15/09, www: http://iknit.lp.edu.ua/CAD/MEMSTECH/index.html

April 26 - 30, 2009, * IEEE International Re-liability Physics Symposium, Location: Fair-mont Queen Elizabeth Hotel, Montreal, Canada, Contact: Ronald Lacoe, E-mail: [email protected], Deadline: 10/3/09, www: http://www.irps.org/

April 27 - 30, 2009, T International Sympo-sium on VLSI Design, Automation and Test, Location: Ambassador Hotel, Hsinchu, Tai-wan, Contact: Elodie Ho, E-mail: [email protected], Deadline: 10/19/08, www: http://vlsi-dat.itri.org.tw/2009/General

April 27 - 28, 2009, T IEEE International Con-ference on RFID, Location: Walt Disney World Swan and Dolphin, Orlando, FL, USA, Contact: Giorgie Milamena, E-mail: [email protected], Deadline: 12/1/08, www: www.ieee-rfid.org/2009

April 27 - 29, 2009, T International Sympo-sium on VLSI Technology, Systems and Applications, Location: The Ambassador Ho-tel, Hsinchu, Taiwan, Contact: Clara Wu, E-mail: [email protected], Deadline: 12/31/08, www: http://vlsitsa.itri.org.tw/2009/General

April 28 - 30, 2009, @ International Vac-uum Electronics Conference, Location: An-gelicum, Pontifical Univ. of St. Thomas Aquinas, Rome, Italy, Contact: Marinella Aloisio, E-mail: [email protected], Deadline: 12/23/08, www: www.ivec2009.org

May 3 - 7, 2009, T Nanotechnology Con-ference and Trade Show, Location: George R. Brown Convention Center, Houston, TX, USA, Contact: Sarah Wenning, E-mail: [email protected], Deadline: 11/12/08, www: http://www.nsti.org/Nanotech2009/

May 5 - 7, 2009, T Workshops on Compact Modeling, Location: Houston, TX, USA, Con-tact: Xing Zhou, E-mail: [email protected], Deadline: 1/28/09, www: http://www3.ntu.edu.sg/home/exzhou/WCM/index.htm

May 10 - 12, 2009, * IEEE/SEMI Advanced Semiconductor Manufacturing Confer-ence, Location: Pullman Hotel, Berlin, Germany, Contact: Margaret Kindling, E-mail: [email protected], Deadline: 3/31/09, www: http://www.semi.org/asmc2009

May 10 - 14, 2009, T IEEE Internation-al Memory Workshop, Location: Hyatt, Monterey, CA, USA, Contact: Tamer San, E-mail: [email protected], Deadline: 1/11/09, www: http://www.ewh.ieee.org/soc/eds/imw/

May 10 - 14, 2009, @ IEEE International Conference on Indium Phosphide and Related Materials, Location: Marriott Newport Beach Hotel & Spa, Newport Beach, CA, USA, Contact: Mary Hendrickx, E-mail: [email protected], Deadline: 12/15/08, www: http://www.i-leos.org

May 11 - 15, 2009, T International Confer-ence on Frontiers of Characterization and Metrology for Nanoelectronics, Lo-cation: University of Albany, Albany, NY, USA, Contact: David Seiler, E-mail: [email protected], Deadline: 12/17/08, www: http://www.eeel.nist.gov/812/conference/

May 14 - 15, 2009, T IEEE International Meeting for Future of Electron Devices, Location: Kansai University Centenary Memorial Hall, Osaka, Japan, Contact: Tadashi Nishimu-ra, E-mail: [email protected], Deadline: 1/21/09, www: www.imfedk.org

May 17 - 22, 2009, T International Con-ference on Silicon Epitaxy and Hetero-structures, Location: Ayres Hotel, Manhattan Beach, Los Angeles, CA, USA, Contact: Matthias Bauer, E-mail: [email protected], Dead-line: 2/9/09, www: http://www.icsi-6.org/

May 18 - 21, 2009, T International Elec-trostatic Discharge Workshop, Location: Stanford Sierra Conference Center, Lake Tahoe, CA, USA, Contact: Lisa Pimpinella, E-mail: [email protected], Deadline: 11/14/08, www: http://www.esda.org/IEW.htm

May 26 - 29, 2009, T International Confer-ence on Electron, Ion and Photon Beam Technology and Nanofabrication, Loca-tion: Marco Island Marriott Beach Resort, Mar-co Island, FL, USA, Contact: Elizabeth Dobisz, E-mail: [email protected], Dead-line: 1/9/09, www: http://www.eipbn.org/

May 27 - 29, 2009, T International Work-shop on Computational Electronics, Loca-tion: Tsinghua University, Beijing, China, Contact: Zhiping Yu, E-mail: [email protected], Deadline: 1/15/09, www: www.iwce.org

June 1 - 3, 2009, * IEEE International Inter-connect Technology Conference, Location: Royton Sapporo Hotel, Sapporo, Japan, Contact: Wendy Walker, E-mail: [email protected], Deadline: 1/19/09, www: http://www.ieee.org/conference/iitc

June 1 - 2, 2009, T IEEE International Work-shop on Electron Devices and Semicon-ductor Technology, Location: Indian Institute of Technology Bombay, Mumbai, India, Contact: M. Radhakrishnan, E-mail: [email protected], Deadline: 2/15/09, www: http://www.ee.iitb.ac.in/iedst/

June 7 - 9, 2009, T IEEE Radio Frequency Integrated Circuits Symposium, Location: Boston Convention Center, Boston, MA, USA, Contact: Tina Quach, E-mail: [email protected], Deadline: 1/6/09, www: www.rfic2009.org

June 7 - 12, 2009, * IEEE Photovoltaic Spe-cialists Conference, Location: Philadelphia Marriott Downtown, Philadelphia, PA, USA, Con-tact: Americo Forestieri, E-mail: [email protected], Deadline: 1/14/09, www: www.pvsc34.org

June 11 - 12, 2009, T International Work-shop on Junction Technology, Location: Kyoto University Clock Tower, Kyoto, Japan, Contact: Kazuo Tsutsui, E-mail: [email protected], Deadline: 3/2/09, www: http://www.iwailab.ep.titech.ac.jp/IWJT/index.html

June 13 - 14, 2009, @ IEEE Silicon Nanoelec-tronics Workshop, Location: Rihga Royal Ho-


tel Kyoto, Kyoto, Japan, Contact: Yukinori Ono, E-mail: [email protected], Deadline: 2/15/09, www: http://diana.pe.titech.ac.jp/~snw2009

June 14 - 18, 2009, @ International Sympo-sium on Power Semiconductor Devices & Integrated Circuits, Location: Axa Audi-torium, Barcelona, Spain, Contact: Jose Millan, E-mail: [email protected], Deadline: 11/3/08, www: www.ispsd09.com

June 14 - 18, 2009, @ TRANSDUCERS - In-ternational Conference on Solid-State Sensors, Actuators and Microsystems, Location: Adams Mark Hotel, Denver, CO, USA, Contact: Transducers 2009 Conference, E-mail: [email protected], Deadline: 12/1/08, www: http://www.transducers09.org/

June 14 - 19, 2009, T Future Trends in Mi-croelectronics Workshop, Location: Sar-dinia, Italy, Contact: Serge Luryi, E-mail: [email protected], Deadline: 2/15/08, www: Not Available

June 16 - 18, 2009, @ IEEE Symposium on VLSI Technology, Location: Rihga Royal Hotel, Kyoto, Japan, Contact: Phyllis Mahoney, E-mail: [email protected], Deadline: 2/1/09, www: http://www.vlsisymposium.org

June 17 - 18, 2009, T IEEE Symposium on VLSI Circuits, Location: Rihga Royal Hotel Kyoto, Kyoto, Japan, Contact: Phyllis Mahoney, E-mail: [email protected], Deadline: 1/14/09, www: www.vlsisymposium.org

June 22 - 24, 2009, T Device Research Conference, Location: The Pennsylvania State University, University Park, PA, USA, Contact: Marsha Church, E-mail: [email protected], Deadline: 3/1/09, www: www.deviceresearch-conference.org

June 25 - 28, 2009, T International Image Sensor Workshop, Location: Bergen, Nor-way, Contact: Eric Fossum, E-mail: [email protected], Deadline: 2/27/09, www: www.imagesensors.org

July 6 - 10, 2009, T IEEE International Sym-posium on the Physical and Failure Analysis of Integrated Circuits, Location: International Conference Center & Hotel, Su-zhou, China, Contact: Song Xianzhong, E-mail: [email protected], Deadline: 1/16/09, www: http://ewh.ieee.org/reg/10/ipfa/

July 20 - 24, 2009, @ IEEE International Vacuum Nanoelectronics Conference, Location: Congress Center, Hamamatsu, Japan, Contact: Yoichiro Nakanishi, E-mail: [email protected], Deadline: 3/15/09, www: http://ny7084.rie.shizuoka.ac.jp/ivnc2009/

August 19 - 21, 2009, T International Sympo-sium on Low-Power Electronics and De-sign, Location: San Francisco, CA, USA, Contact: Jorg Henkel, E-mail: [email protected], Deadline: 3/2/09, www: www.islped.org

August 30 - September 4, 2009, T Electri-cal Overstress/Electrostatic Discharge Symposium, Location: Disneyland Ho-tel, Anaheim, USA, Contact: Lisa Pimpinella, E-mail: [email protected], Deadline: 1/9/09, www: wwww.esda.org

August 31 - September 3, 2009, T Symposium on Microelectronics Technology & Devic-es, Location: Piramide Natal Resort and Conven-tion, Natal, Brazil, Contact: Ivan Saraiva, E-mail: [email protected], Deadline: 3/19/09, www: www.sbmicro.org.br/sbmicro

September 9 - 11, 2009, T International Con-ference on Simulation of Semiconductor Processes and Devices, Location: Hotel Del Coronado, San Diego, CA, USA, Contact: Fely Barrera, E-mail: [email protected], Deadline: 2/20/09, www: http://www-tcad.stanford.edu/sispad09/

September 14 - 18, 2009, T European Sol-id-State Device Research Conference, Location: Divani Caravel Hotel, Athens, Greece, Contact: Efi Papastavropoulou, E-mail: Efip@ triaenatours.gr, Deadline: 4/4/09, www: http://www.essderc.org/en/page/ess07.aspx

September 14 - 18, 2009, T International Conference on Electromagnetics in Ad-vanced Applications, Location: Centro Congressi Torino Incontra, Torino, Italy, Contact: Guido Lombardi, E-mail: [email protected], Deadline: 2/28/09, www: www.iceaa.net

September 14 - 18, 2009, T International Crimean Microwave Conference “Mi-crowave & Telecommunication Technol-ogy”, Location: Sevastopol, Ukraine, Contact: P. Ermolov, E-mail: [email protected], Deadline: 5/20/09, www: www.crimico.org

September 20 - 23, 2009, T IEEE Custom Integrated Circuits Conference, Location: Double Tree Hotel, San Jose, CA, USA, Contact: Me-lissa Widerkehr, E-mail: [email protected], Deadline: Not Available, www: www.ieee-cicc.org

September 21 - 24, 2009, T IEEE Internation-al Seminar/Workshop on Direct and Inverse Problems of Electromagnetic and Acoustic Wave Theory, Location: Inst. Of Applied Prob. Of Mechanics and Math, Lviv, Ukraine, Contact: Mykhalyo Andriychuk, E-mail: [email protected], Deadline: 8/10/09, www: www.ewh.ieee.org/soc/cpmt/ukraine

September 28 - 29, 2009, T IEEE European Microwave Integrated Circuits Confer-ence, Location: Nuova Fiera di Roma, Rome, Italy, Contact: Massimo Comparini, E-mail: [email protected], Dead-line: 2/22/09, www: http://www.eumweek.com/

September 29 - October 2, 2009, T Interna-tional Conference on Advanced Thermal Processing of Semiconductors, Location: Marriott Hotel Albany, Albany, NY, USA, Contact:

Bo Lojek, E-mail: [email protected], Deadline: 5/31/09, www: www.ieee-rtp.org

October 4 - 9, 2009, T Symposium on ULSI Process Integration, Location: Vienna, Aus-tria, Contact: Cor Claeys, E-mail: [email protected], Deadline: 4/24/09, www: www.electro-chem.org/meetings

October 5 - 8, 2009, * IEEE International SOI Conference, Location: Crowne Plaza Ho-tel, Foster City, CA, USA, Contact: Bobbi Arm-bruster, E-mail: [email protected], Deadline: 5/1/09, www: www.soiconference.org

October 6 - 9, 2009, T International Confer-ence on Solid-State Devices and Mate-rials, Location: Sendai Kokusai Hotel, Sendai, Japan, Contact: Mitsumasa Koyanagi, E-mail: [email protected], Deadline: 3/25/09, www: www.ssdm.jp

October 11 - 14, 2009, * IEEE Compound Semiconductor IC Symposium, Location: Sheraton Greensboro Hotel at Four Seasons, Greensboro, NC, USA, Contact: Marko Sokolich, E-mail: [email protected], Deadline: 5/8/09, www: http://www.csics.org/

October 12 - 14, 2009, * International Semi-conductor Conference, Location: Sinaia Hotel, Sinaia, Romania, Contact: Cristina Bui-culescu, E-mail: [email protected], Deadline: 6/10/09, www: www.imt.ro/CAS

October 12 - 14, 2009, * IEEE Bipolar/ BiCMOS Circuits and Technology Meeting, Location: Capri Palace, Capri, Italy, Contact: Janice Jopke, E-mail: [email protected], Deadline: 4/20/09, www: http://www.ieee-bctm.org

October 18 - 22, 2009, * IEEE International Integrated Reliability Workshop, Loca-tion: Stanford Sierra Conference Center, South Lake Tahoe, CA, USA, Contact: J.T. Ryan, E-mail: [email protected], Deadline: 7/17/09, www: www.iirw.org

October 25 - 28, 2009, T IEEE Interna-tional Conference on Sensors, Location: Christchurch Convention Centre, Christchurch, New Zealand, Contact: Subhas Mukhopadhyay, E-mail: [email protected], Dead-line: 2/1/09, www: http://ieeesensors2009.massey.ac.nz

October 27 - 29, 2009, T IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, Location: Jingyan Hotel, Beijing, China, Contact: Mengqi Zhou, E-mail: [email protected], Deadline: 3/31/09, www: http://mape09.bjtu.edu.cn/

November 2 - 5, 2009, T IEEE International Conference on Computer Aided Design, Location: Double Tree Hotel, San Jose, CA, USA, Contact: Kathy Embler, E-mail: [email protected], Deadline: 4/10/09, www: www.iccad.com


EDS DISTINGUISHED LECTURERS VISIT THE ED GUANGZHOU CHAPTER

On the 30th of December, just before the end of 2008, the ED Guangzhou Chapter held a DL talk at the South China University of Technology by Prof. Hei Wong of the City Univer-

sity, Hong Kong and Prof. Mansun Chan of the Hong Kong University of Science and Technology. Prof. Wong’s spoke on the present and future trends of silicon technology

while Prof. Chan’s talk provided an outlook on the application of silicon technology into the important area of bio-electronics. The lectures were well received with over 80 students and researchers attending, followed by an extended discussion with the audience.

As a relatively new chapter, ED Guangzhou plans to expand its membership base by providing add-ed value to their professional career development. In this regards, the officers of the chapter had a useful discussion with Prof. Wong and Prof. Chan on the planning of activities for the upcoming years.

Bin LiED Guangzhou Chapter Vice-Chair

South China University of Technology

Wushan, Guangzhou, China

Prof. Hei Wong speaking to over 80 attendees at South China University of Technology

2009 ieee/semi advanced t of ontents s m upcoming ... · e-mail: [email protected] contributions...

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