2008 index ieee transactions on nanotechnology vol. 7

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 807 2008 Index IEEE Transactions on Nanotechnology Vol. 7 This index covers all technical items — papers, correspondence, reviews, etc. — that appeared in this periodical during 2008, and items from previous years that were commented upon or corrected in 2008. Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author’s name. The primary entry includes the coauthors’ names, the title of the paper or other item, and its location, specified by the publication abbrevi- ation, year, month, and inclusive pagination. The Subject Index contains entries describing the item under all appropriate subject headings, plus the first author’s name, the publication abbreviation, month, and year, and inclusive pages. Note that the item title is found only under the primary entry in the Author Index. AUTHOR INDEX A Abstreiter, G., see Harrer, S., TNANO May 2008 363-370 Adam , D., see Razansky, D., TNANO Sept. 2008 580-585 Ahmad, M. R., Nakajima, M., Kojima , S., Homma , M., and Fukuda, T., In Situ Single Cell Mechanics Characterization of Yeast Cells Using Nanoneedles Inside Environmental SEM; TNANO Sept. 2008 607-616 Ahn, D., see Kim, H. K., TNANO March 2008 120-123 Ahn, D., see Jung, Y. C., TNANO Sept. 2008 544-550 Akao, Y., see Naruse, M., TNANO Jan. 2008 14-19 Akinwande, D., Yasuda, S., Paul, B., Fujita, S., Close, G., and Philip Wong, H.-S., Monolithic Integration of CMOS VLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications; TNANO Sept. 2008 636-639 Alem, N., see Donthu, S., TNANO May 2008 338-343 Aleynikov, V. E., see Salah, N., TNANO Nov. 2008 749-753 Alfano, B., see La Ferrara, V., TNANO Nov. 2008 776-781 Allec, N., Knobel, R. G., and Shang, L., SEMSIM: Adaptive Multiscale Simu- lation For Single-Electron Devices; TNANO May 2008 351-354 Alsing, P. M., see Huang, D., TNANO March 2008 151-164 Amaratunga, G. A. J., see Jang, J. E., TNANO July 2008 389-393 Amaratunga, G. A. J., see Kumar, M. J., TNANO Nov. 2008 643-650 Anderson, N. G., Information Acquisition at the Nanoscale: Fundamental Con- siderations; TNANO Sept. 2008 521-526 Ankiewicz, A., see Choi, D.-Y., TNANO May 2008 285-290 Anyan, D., see Xiaohong, T., TNANO July 2008 422-426 Aphale, S. S., Bhikkaji, B., and Moheimani, S. O. R., Minimizing Scanning Errors in Piezoelectric Stack-Actuated Nanopositioning Platforms; TNANO Jan. 2008 79-90 Arregui, F. J., see Corres, J. M., TNANO July 2008 394-400 Asenjo, A., see Jaafar, M., TNANO May 2008 245-250 Azuma, Y., see Mori, T., TNANO March 2008 237-241 B Baccarani, G., see Gnani, E., TNANO Nov. 2008 700-709 Bandyopadhyay, S., see Wan, J., TNANO Jan. 2008 34-39 Bandyopadhyay, S., see Varfolomeev, A., TNANO Nov. 2008 800-805 Baravelli, E., Jurczak, M., Speciale, N., Meyer, K., and Dixit, A., Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance; TNANO May 2008 291-298 Barnola, S., see Pouydebasque, A., TNANO Sept. 2008 551-557 Beauvais, J., see Dubuc, C., TNANO Jan. 2008 68-73 Becherer, M., Csaba, G., Porod, W., Emling, R., Lugli, P., and Schmitt-Land- siedel, D., Magnetic Ordering of Focused-Ion-Beam Structured Cobalt- Platinum Dots for Field-Coupled Computing; TNANO May 2008 316-320 Beiu, V., see Ibrahim, W., TNANO Jan. 2008 56-67 Benkstein, K. D., see Donthu, S., TNANO May 2008 338-343 Bernstein, G., see Crocker, M., TNANO May 2008 376-386 Bertness, K. A., see Blanchard, P. T., TNANO Nov. 2008 760-765 Bhaduri, D., see Coker, A., TNANO March 2008 202-208 Bhikkaji, B., see Aphale, S. S., TNANO Jan. 2008 79-90 Bindal , A., see Hamedi-Hagh, S., TNANO Nov. 2008 766-775 Blanchard, P. T., Bertness, K. A., Harvey, T. E., Mansfield, L. M., Sanders, A. W., and Sanford, N. A., MESFETs Made From Individual GaN Nanowires; TNANO Nov. 2008 760-765 Bode, M., see Huang, Q., TNANO Nov. 2008 688-692 Bohannan, E. W., see Yang , Q., TNANO March 2008 209-216 Bouvet , D., see Pott, V., TNANO Nov. 2008 733-744 Brut, H., see Hofheinz, M., TNANO Jan. 2008 74-78 Buh, G.-H., Hwang , J.-H., Jeon, E.-K., So , H.-M., Lee , J.-O., Kong, K.-j., and Chang , H., On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrication of Carbon-Nanotube-Based Electronic Devices; TNANO Sept. 2008 624-627 Bustos, J., see Pouydebasque, A., TNANO Sept. 2008 551-557 C Cahay, M., see Wan, J., TNANO Jan. 2008 34-39 Calo, G., D’Orazio, A., De Sario, M., Mescia, L., Petruzzelli, V., and Pruden- zano, F., Tunability of Photonic Band Gap Notch Filters; TNANO May 2008 273-284 Calvo, M. R., Caturla, M. J., Jacob, D., Untiedt, C., and Palacios, J. J., Me- chanical, Electrical, and Magnetic Properties of Ni Nanocontacts; TNANO March 2008 165-168 Cardimona, D. A., see Huang, D., TNANO March 2008 151-164 Caturla, M. J., see Calvo, M. R., TNANO March 2008 165-168 Cerutti, R., see Hofheinz, M., TNANO Jan. 2008 74-78 Cha, S. N., see Jang, J. E., TNANO July 2008 389-393 Chan, L., see Theng, A. L., TNANO Nov. 2008 795-799 Chang , H., see Buh, G.-H., TNANO Sept. 2008 624-627 Chang, C.-C., see Lin, C.-H., TNANO Sept. 2008 558-564 Chang, H.-K., see Curreli, M., TNANO Nov. 2008 651-667 Chang, L.-C., see Ho, C.-C., TNANO July 2008 412-417 Chang, N.-K., and Chang, S.-H., Determining Mechanical Properties of Carbon Microcoils Using Lateral Force Microscopy; TNANO March 2008 197-201 Chang, S. J., see Ji, L. W., TNANO Jan. 2008 1-4 Chang, S.-H., see Chang, N.-K., TNANO March 2008 197-201 Chang, S.-J., Hsueh, T.-J., Chen, I.-C., Hsieh, S.-F., Chang, S.-P., Hsu, C.-L., Lin, Y.-R., and Huang, B.-R., Highly Sensitive ZnO Nanowire Acetone Vapor Sensor With Au Adsorption; TNANO Nov. 2008 754-759 Chang, S.-P., see Chang, S.-J., TNANO Nov. 2008 754-759 Chau, R. S., see Kumar, M. J., TNANO Nov. 2008 643-650 Chen , Y.-Y., see Lin, C.-H., TNANO Sept. 2008 558-564 Chen, I.-C., see Chang, S.-J., TNANO Nov. 2008 754-759 Chen, P.-C., Shen, G., and Zhou, C., Chemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanostructures; TNANO Nov. 2008 668-682 Chen, W. P.-N., Su, P., and Goto, K.-I., Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs; TNANO Sept. 2008 538-543 Chen, Y.-C., Huang, C.-Y., Su, Y.-K., Li, W.-L., Yeh, C.-H., and Lin, Y.-C., The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion; TNANO July 2008 503-507 Chiou, B.-S., see Ho, C.-C., TNANO July 2008 412-417 Cho, C.-T., see Lin, C.-H., TNANO Sept. 2008 558-564 Cho, K. H., see Suk, S. D., TNANO March 2008 181-184 Cho, K. H., see Jung, Y. C., TNANO Sept. 2008 544-550 Cho, S.-J., see Yang, D.-J., TNANO March 2008 131-134 Choi, B. -K., see Park, K., TNANO July 2008 427-433 Choi, B. S., see Kim, J. S., TNANO March 2008 128-130 Choi, D.-Y., Madden, S., Rode, A., Wang, R., Ankiewicz, A., and Luther- Davies, B., Surface Roughness in Plasma-Etched As S Films: Its Origin and Improvement; TNANO May 2008 285-290 Choi, K.-S., see Lee, Y. T., TNANO March 2008 111-114 Choi, M., see Kim, D., TNANO Nov. 2008 683-687 Choi, W., see Verma, V. P., TNANO Nov. 2008 782-786 Choi, W.-Y., see Yang, D.-J., TNANO March 2008 131-134 Choi, Y., see Jang, J. E., TNANO July 2008 389-393

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2008 Index IEEE Transactions on Nanotechnology Vol. 7

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 807

2008 IndexIEEE Transactions on Nanotechnology

Vol. 7

This index covers all technical items — papers, correspondence, reviews, etc.— that appeared in this periodical during 2008, and items from previous yearsthat were commented upon or corrected in 2008. Departments and other itemsmay also be covered if they have been judged to have archival value.

The Author Index contains the primary entry for each item, listed under thefirst author’s name. The primary entry includes the coauthors’ names, the titleof the paper or other item, and its location, specified by the publication abbrevi-ation, year, month, and inclusive pagination. The Subject Index contains entriesdescribing the item under all appropriate subject headings, plus the first author’sname, the publication abbreviation, month, and year, and inclusive pages. Notethat the item title is found only under the primary entry in the Author Index.

AUTHOR INDEX

A

Abstreiter, G., see Harrer, S., TNANO May 2008 363-370Adam , D., see Razansky, D., TNANO Sept. 2008 580-585Ahmad, M. R., Nakajima, M., Kojima , S., Homma , M., and Fukuda, T., In Situ

Single Cell Mechanics Characterization of Yeast Cells Using NanoneedlesInside Environmental SEM; TNANO Sept. 2008 607-616

Ahn, D., see Kim, H. K., TNANO March 2008 120-123Ahn, D., see Jung, Y. C., TNANO Sept. 2008 544-550Akao, Y., see Naruse, M., TNANO Jan. 2008 14-19Akinwande, D., Yasuda, S., Paul, B., Fujita, S., Close, G., and Philip Wong,

H.-S., Monolithic Integration of CMOS VLSI and Carbon Nanotubes forHybrid Nanotechnology Applications; TNANO Sept. 2008 636-639

Alem, N., see Donthu, S., TNANO May 2008 338-343Aleynikov, V. E., see Salah, N., TNANO Nov. 2008 749-753Alfano, B., see La Ferrara, V., TNANO Nov. 2008 776-781Allec, N., Knobel, R. G., and Shang, L., SEMSIM: Adaptive Multiscale Simu-

lation For Single-Electron Devices; TNANO May 2008 351-354Alsing, P. M., see Huang, D., TNANO March 2008 151-164Amaratunga, G. A. J., see Jang, J. E., TNANO July 2008 389-393Amaratunga, G. A. J., see Kumar, M. J., TNANO Nov. 2008 643-650Anderson, N. G., Information Acquisition at the Nanoscale: Fundamental Con-

siderations; TNANO Sept. 2008 521-526Ankiewicz, A., see Choi, D.-Y., TNANO May 2008 285-290Anyan, D., see Xiaohong, T., TNANO July 2008 422-426Aphale, S. S., Bhikkaji, B., and Moheimani, S. O. R., Minimizing Scanning

Errors in Piezoelectric Stack-Actuated Nanopositioning Platforms; TNANOJan. 2008 79-90

Arregui, F. J., see Corres, J. M., TNANO July 2008 394-400Asenjo, A., see Jaafar, M., TNANO May 2008 245-250Azuma, Y., see Mori, T., TNANO March 2008 237-241

B

Baccarani, G., see Gnani, E., TNANO Nov. 2008 700-709Bandyopadhyay, S., see Wan, J., TNANO Jan. 2008 34-39Bandyopadhyay, S., see Varfolomeev, A., TNANO Nov. 2008 800-805Baravelli, E., Jurczak, M., Speciale, N., Meyer, K., and Dixit, A., Impact of

LER and Random Dopant Fluctuations on FinFET Matching Performance;TNANO May 2008 291-298

Barnola, S., see Pouydebasque, A., TNANO Sept. 2008 551-557Beauvais, J., see Dubuc, C., TNANO Jan. 2008 68-73Becherer, M., Csaba, G., Porod, W., Emling, R., Lugli, P., and Schmitt-Land-

siedel, D., Magnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dots for Field-Coupled Computing; TNANO May 2008 316-320

Beiu, V., see Ibrahim, W., TNANO Jan. 2008 56-67Benkstein, K. D., see Donthu, S., TNANO May 2008 338-343Bernstein, G., see Crocker, M., TNANO May 2008 376-386Bertness, K. A., see Blanchard, P. T., TNANO Nov. 2008 760-765Bhaduri, D., see Coker, A., TNANO March 2008 202-208

Bhikkaji, B., see Aphale, S. S., TNANO Jan. 2008 79-90Bindal , A., see Hamedi-Hagh, S., TNANO Nov. 2008 766-775Blanchard, P. T., Bertness, K. A., Harvey, T. E., Mansfield, L. M., Sanders, A.

W., and Sanford, N. A., MESFETs Made From Individual GaN Nanowires;TNANO Nov. 2008 760-765

Bode, M., see Huang, Q., TNANO Nov. 2008 688-692Bohannan, E. W., see Yang , Q., TNANO March 2008 209-216Bouvet , D., see Pott, V., TNANO Nov. 2008 733-744Brut, H., see Hofheinz, M., TNANO Jan. 2008 74-78Buh, G.-H., Hwang , J.-H., Jeon, E.-K., So , H.-M., Lee , J.-O., Kong, K.-j.,

and Chang , H., On-Chip Electrical Breakdown of Metallic Nanotubes forMass Fabrication of Carbon-Nanotube-Based Electronic Devices; TNANOSept. 2008 624-627

Bustos, J., see Pouydebasque, A., TNANO Sept. 2008 551-557

C

Cahay, M., see Wan, J., TNANO Jan. 2008 34-39Calo, G., D’Orazio, A., De Sario, M., Mescia, L., Petruzzelli, V., and Pruden-

zano, F., Tunability of Photonic Band Gap Notch Filters; TNANO May 2008273-284

Calvo, M. R., Caturla, M. J., Jacob, D., Untiedt, C., and Palacios, J. J., Me-chanical, Electrical, and Magnetic Properties of Ni Nanocontacts; TNANOMarch 2008 165-168

Cardimona, D. A., see Huang, D., TNANO March 2008 151-164Caturla, M. J., see Calvo, M. R., TNANO March 2008 165-168Cerutti, R., see Hofheinz, M., TNANO Jan. 2008 74-78Cha, S. N., see Jang, J. E., TNANO July 2008 389-393Chan, L., see Theng, A. L., TNANO Nov. 2008 795-799Chang , H., see Buh, G.-H., TNANO Sept. 2008 624-627Chang, C.-C., see Lin, C.-H., TNANO Sept. 2008 558-564Chang, H.-K., see Curreli, M., TNANO Nov. 2008 651-667Chang, L.-C., see Ho, C.-C., TNANO July 2008 412-417Chang, N.-K., and Chang, S.-H., Determining Mechanical Properties of Carbon

Microcoils Using Lateral Force Microscopy; TNANO March 2008 197-201Chang, S. J., see Ji, L. W., TNANO Jan. 2008 1-4Chang, S.-H., see Chang, N.-K., TNANO March 2008 197-201Chang, S.-J., Hsueh, T.-J., Chen, I.-C., Hsieh, S.-F., Chang, S.-P., Hsu, C.-L.,

Lin, Y.-R., and Huang, B.-R., Highly Sensitive ZnO Nanowire AcetoneVapor Sensor With Au Adsorption; TNANO Nov. 2008 754-759

Chang, S.-P., see Chang, S.-J., TNANO Nov. 2008 754-759Chau, R. S., see Kumar, M. J., TNANO Nov. 2008 643-650Chen , Y.-Y., see Lin, C.-H., TNANO Sept. 2008 558-564Chen, I.-C., see Chang, S.-J., TNANO Nov. 2008 754-759Chen, P.-C., Shen, G., and Zhou, C., Chemical Sensors and Electronic Noses

Based on 1-D Metal Oxide Nanostructures; TNANO Nov. 2008 668-682Chen, W. P.-N., Su, P., and Goto, K.-I., Investigation of Coulomb Mobility in

Nanoscale Strained PMOSFETs; TNANO Sept. 2008 538-543Chen, Y.-C., Huang, C.-Y., Su, Y.-K., Li, W.-L., Yeh, C.-H., and Lin, Y.-C.,

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion; TNANO July 2008 503-507

Chiou, B.-S., see Ho, C.-C., TNANO July 2008 412-417Cho, C.-T., see Lin, C.-H., TNANO Sept. 2008 558-564Cho, K. H., see Suk, S. D., TNANO March 2008 181-184Cho, K. H., see Jung, Y. C., TNANO Sept. 2008 544-550Cho, S.-J., see Yang, D.-J., TNANO March 2008 131-134Choi, B. -K., see Park, K., TNANO July 2008 427-433Choi, B. S., see Kim, J. S., TNANO March 2008 128-130Choi, D.-Y., Madden, S., Rode, A., Wang, R., Ankiewicz, A., and Luther-

Davies, B., Surface Roughness in Plasma-Etched As S Films: Its Originand Improvement; TNANO May 2008 285-290

Choi, K.-S., see Lee, Y. T., TNANO March 2008 111-114Choi, M., see Kim, D., TNANO Nov. 2008 683-687Choi, W., see Verma, V. P., TNANO Nov. 2008 782-786Choi, W.-Y., see Yang, D.-J., TNANO March 2008 131-134Choi, Y., see Jang, J. E., TNANO July 2008 389-393

808 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Choi, Y.-K., see Ryu, S.-W., TNANO March 2008 145-150Choi, Y.-S., Jang, G.-S., and Lee, K.-S., Displacement Current of Nanoden-

drimer; TNANO March 2008 107-110Chou, Y.-H., Tsai , I-M., and Kuo, S.-Y., Quantum Boolean Circuits are

1-Testable; TNANO July 2008 484-492Chow, W. W. Y., see Qu, Y., TNANO Sept. 2008 565-572Chu, M., and Liu, G., Fluorescent Silkworm Silk Prepared via Incorporation of

Green, Yellow, Red, and Near-Infrared Fluorescent Quantum Dots; TNANOMay 2008 308-315

Chun, I. S., and Li, X., Controlled Assembly and Dispersion of Strain-InducedInGaAs/GaAs Nanotubes; TNANO July 2008 493-495

Chung, I., see Heo, J., TNANO March 2008 169-171Close, G., see Akinwande, D., TNANO Sept. 2008 636-639Close, G. F., and Wong, H.-S. P., Assembly and Electrical Characterization of

Multiwall Carbon Nanotube Interconnects; TNANO Sept. 2008 596-600Cohen, G. M., see Kumar, M. J., TNANO Nov. 2008 643-650Coker, A., Taylor, V., Bhaduri, D., Shukla, S., Raychowdhury, A., and Roy, K.,

Multijunction Fault-Tolerance Architecture for Nanoscale Crossbar Mem-ories; TNANO March 2008 202-208

Coronel, P., see Hofheinz, M., TNANO Jan. 2008 74-78Coronel, P., see Pouydebasque, A., TNANO Sept. 2008 551-557Corres, J. M., del Villar, I., Matias, I. R., and Arregui, F. J., Two-Layer

Nanocoatings in Long-Period Fiber Gratings for Improved Sensitivity ofHumidity Sensors; TNANO July 2008 394-400

Cote, R. J., see Curreli, M., TNANO Nov. 2008 651-667Cotofana, S. D., see Martorell, F., TNANO Jan. 2008 24-33Crocker, M., Sharon Hu, X., Niemier, M., Yan, M., and Bernstein, G., PLAs in

Quantum-Dot Cellular Automata; TNANO May 2008 376-386Cros, A., see Hofheinz, M., TNANO Jan. 2008 74-78Csaba, G., see Becherer, M., TNANO May 2008 316-320Curreli, M., Zhang, R., Ishikawa, F. N., Chang, H.-K., Cote, R. J., Zhou, C., and

Thompson, M. E., Real-Time, Label-Free Detection of Biological EntitiesUsing Nanowire-Based FETs; TNANO Nov. 2008 651-667

D

D’Orazio, A., De Sario, M., Marrocco, V., Petruzzelli, V., and Prudenzano, F.,Photonic Crystal Drop Filter Exploiting Resonant Cavity Configuration;TNANO Jan. 2008 10-13

D’Orazio, A., see Calo, G., TNANO May 2008 273-284De Michielis, L., see Pott, V., TNANO Nov. 2008 733-744De Sario, M., see D’Orazio, A., TNANO Jan. 2008 10-13De Sario, M., see Calo, G., TNANO May 2008 273-284del Villar, I., see Corres, J. M., TNANO July 2008 394-400Dell Olio, F., see Passaro, V. M. N., TNANO July 2008 401-408Deloffre, E., see Pouydebasque, A., TNANO Sept. 2008 551-557Deng , J., see Wei, L., TNANO Nov. 2008 720-727Denorme, S., see Pouydebasque, A., TNANO Sept. 2008 551-557Di Francia, G., see La Ferrara, V., TNANO Nov. 2008 776-781Divan, R., see Huang, Q., TNANO Nov. 2008 688-692Dixit, A., see Baravelli, E., TNANO May 2008 291-298Dong, L., Shou, K., Frutiger, D. R., Subramanian, A., Zhang , L., Nelson, B.

J., Tao, X., and Zhang, X., Engineering Multiwalled Carbon NanotubesInside a Transmission Electron Microscope Using Nanorobotic Manipu-lation; TNANO July 2008 508-517

Dong, Z., see Li, M., TNANO July 2008 477-479Donthu, S., Alem, N., Pan, Z., Li, S.-Y., Shekhawat, G., Dravid, V., Benkstein,

K. D., and Semancik, S., Directed Fabrication of Ceramic Nanostructureson Fragile Substrates Using Soft-electron Beam Lithography (soft-eBL);TNANO May 2008 338-343

Dravid, V., see Donthu, S., TNANO May 2008 338-343Drouin, D., see Dubuc, C., TNANO Jan. 2008 68-73Du, G., see Yan, B., TNANO July 2008 418-421Dubuc, C., Beauvais, J., and Drouin, D., A Nanodamascene Process for Ad-

vanced Single-Electron Transistor Fabrication; TNANO Jan. 2008 68-73Ducati, C., see Pisana, S., TNANO July 2008 458-462Dutartre, D., see Pouydebasque, A., TNANO Sept. 2008 551-557

E

E, C., see Litvinov , D., TNANO July 2008 463-476Einziger, P. D., see Razansky, D., TNANO Sept. 2008 580-585

Eleftheriou, E., see Sebastian, A., TNANO Sept. 2008 586-595Emling, R., see Becherer, M., TNANO May 2008 316-320Enaya, H., Semenov, Y. G., Kim, K.W., and Zavada, J.M., Nonvolatile Memory

via Spin Polaron Formation; TNANO July 2008 480-483Eswar, R., see Yang, W. F., TNANO Nov. 2008 728-732

F

Fang, T. H., see Ji, L. W., TNANO Jan. 2008 1-4Feng, L., see Sun, F., TNANO March 2008 217-222Firth, S., see Newton, M. C., TNANO Jan. 2008 20-23Frutiger, D. R., see Dong, L., TNANO July 2008 508-517Fujita, S., see Akinwande, D., TNANO Sept. 2008 636-639Fukuda, T., see Ahmad, M. R., TNANO Sept. 2008 607-616

G

Gan, Z., see Yan, B., TNANO July 2008 418-421Gnani, E., Gnudi , A., Reggiani, S., Luisier, M., and Baccarani, G., Band Effects

on the Transport Characteristics of Ultrascaled SNW-FETs; TNANO Nov.2008 700-709

Gnudi , A., see Gnani, E., TNANO Nov. 2008 700-709Goh, W. L., see Theng, A. L., TNANO Nov. 2008 795-799Gopi, K. R., and Nagarajan, R., Advances in Nanoalumina Ceramic Particle

Fabrication Using Sonofragmentation; TNANO Sept. 2008 532-537Goto, K.-I., see Chen, W. P.-N., TNANO Sept. 2008 538-543Gumbs, G. A., see Huang, D., TNANO March 2008 151-164

H

Habib, S. S., see Salah, N., TNANO Nov. 2008 749-753Hamedi-Hagh, S., and Bindal , A., Spice Modeling of Silicon Nanowire Field-

Effect Transistors for High-Speed Analog Integrated Circuits; TNANO Nov.2008 766-775

Han , I. K., see Kim, K. C., TNANO March 2008 135-139Han, C.-F., and Lin, J.-F., A New Model Developed to Evaluate the Contact

Area Arising During Nano-indentation Tests With Pileup Behavior of MetalMaterials; TNANO May 2008 256-265

Han, J.-I., see Hong, S.-J., TNANO March 2008 172-176Han, K.-R., see Park, K., TNANO July 2008 427-433Han, R., see Yan, B., TNANO July 2008 418-421Han, X., see Qu, Y., TNANO Sept. 2008 565-572Hangarter, C. M., see Rheem, Y., TNANO May 2008 251-255Harrer, S., Strobel, S., Scarpa, G., Abstreiter, G., Tornow, M., and Lugli, P.,

Room Temperature Nanoimprint Lithography Using Molds Fabricated byMolecular Beam Epitaxy; TNANO May 2008 363-370

Harvey, T. E., see Blanchard, P. T., TNANO Nov. 2008 760-765Hasko, D. G., see Jang, J. E., TNANO July 2008 389-393Hayami, S., see Mizugaki, Y., TNANO Sept. 2008 601-606Heo, J., Kim, K., Kim, T., and Chung, I., Characterization of Domain Switching

Behavior of MTJ Cells Using Magnetic Force Microscopy (MFM) and R–HLoop Analysis; TNANO March 2008 169-171

Ho , W. S., see Lin, C.-H., TNANO Sept. 2008 558-564Ho, C.-C., Chiou, B.-S., and Chang, L.-C., Improvement of Electrical Proper-

ties of Ba Sr TiO Capacitors With an Inserted Nano-Cr Interlayer;TNANO July 2008 412-417

Hofheinz, M., Jehl, X., Sanquer, M., Cerutti, R., Cros, A., Coronel, P., Brut, H.,and Skotnicki, T., Measurement of Capacitances in Multigate Transistorsby Coulomb Blockade Spectroscopy; TNANO Jan. 2008 74-78

Hofmann, S., see Pisana, S., TNANO July 2008 458-462Homma , M., see Ahmad, M. R., TNANO Sept. 2008 607-616Hong, B. H., see Jung, Y. C., TNANO Sept. 2008 544-550Hong, S., see Kim, D., TNANO Nov. 2008 683-687Hong, S. H., see Ryu, S.-W., TNANO March 2008 145-150Hong, S.-J., Kim, Y.-H., and Han, J.-I., Development of Ultrafine Indium Tin

Oxide (ITO) Nanoparticle for Ink-Jet Printing by Low-Temperature Syn-thetic Method; TNANO March 2008 172-176

Horsley, D. A., see Skinner, J. L., TNANO Sept. 2008 527-531Hosseini , A., see Nieuwoudt, A., TNANO March 2008 189-196Hsieh, S.-F., see Chang, S.-J., TNANO Nov. 2008 754-759Hsu, C.-L., see Chang, S.-J., TNANO Nov. 2008 754-759Hsueh, T.-J., see Chang, S.-J., TNANO Nov. 2008 754-759

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 809

Hu, Y., Perello, D., Mushtaq, U., and Yun, M., A Single Palladium NanowireVia Electrophoresis Deposition Used as a Ultrasensitive Hydrogen Sensor;TNANO Nov. 2008 693-699

Huang, B.-R., see Chang, S.-J., TNANO Nov. 2008 754-759Huang, C.-Y., see Chen, Y.-C., TNANO July 2008 503-507Huang, D., Alsing, P. M., Cardimona, D. A., and Gumbs, G. A., Effects

of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, andSurface–Plasmon–Polariton for Optical Amplification; TNANO March2008 151-164

Huang, Q., Lilley, C. M., Divan, R., and Bode, M., Electrical Failure Analysisof Au Nanowires; TNANO Nov. 2008 688-692

Huang, Y., Yin, W.-Y, and Liu, Q. H., Performance Prediction of Carbon Nan-otube Bundle Dipole Antennas; TNANO May 2008 331-337

Hunter, L. L., see Skinner, J. L., TNANO Sept. 2008 527-531Hwang , J.-H., see Buh, G.-H., TNANO Sept. 2008 624-627Hwang, J. S., see Kim, H. K., TNANO March 2008 120-123Hwang, S., see Verma, V. P., TNANO Nov. 2008 782-786Hwang, S., see Kim, D., TNANO Nov. 2008 683-687Hwang, S. W., see Kim, H. K., TNANO March 2008 120-123Hwang, S. W., see Jung, Y. C., TNANO Sept. 2008 544-550

I

Ibrahim, W., Beiu, V., and Sulieman, M. H., On the Reliability of MajorityGates Full Adders; TNANO Jan. 2008 56-67

Ide, K., Lee, S. E., Kim, Y. C., Kim, D. K., and Kwon, O., LaGuerre–GaussianEmission Properties of Photonic Quantum Ring Hole-Type Lasers; TNANOMarch 2008 185-188

In Yim, H., see Yoon, J., TNANO July 2008 409-411Ionescu, A. M., see Pott, V., TNANO Nov. 2008 733-744Ishikawa, F. N., see Curreli, M., TNANO Nov. 2008 651-667

J

Jaafar, M., Asenjo, A., and Vazquez, M., Calibration of Coercive and StrayFields of Commercial Magnetic Force Microscope Probes; TNANO May2008 245-250

Jacob, D., see Calvo, M. R., TNANO March 2008 165-168Jagannathan, S., see Yang , Q., TNANO March 2008 209-216Janes, D. B., see Yu, B., TNANO July 2008 496-502Janes, D. B., see Kumar, M. J., TNANO Nov. 2008 643-650Jang, G.-S., see Choi, Y.-S., TNANO March 2008 107-110Jang, J. E., Cha, S. N., Choi, Y., Kang, D. J., Hasko, D. G., Jung, J. E., Kim,

J. M., and Amaratunga, G. A. J., A Nanogripper Employing Aligned Mul-tiwall Carbon Nanotubes; TNANO July 2008 389-393

Jang, K.-S., Yang, H.-M., Kim, J., and Kim, J.-D., Dynamic Formation ofDiffraction Grating in a Photorefractive Liquid Crystal Cell With Meso-porous TiO Layers; TNANO March 2008 115-119

Jehl, X., see Hofheinz, M., TNANO Jan. 2008 74-78Jeon, E.-K., see Buh, G.-H., TNANO Sept. 2008 624-627Jeon, H., see Verma, V. P., TNANO Nov. 2008 782-786Jeon, M., see Verma, V. P., TNANO Nov. 2008 782-786Ji, L. W., Chang, S. J., Fang, T. H., Young, S. J., and Juang, F. S., MOVPE-

Grown Ultrasmall Self-Organized InGaN Nanotips; TNANO Jan. 2008 1-4Jiang, Q., see Lang, X. Y., TNANO Jan. 2008 5-9Jiang, Q., see Yu, S. S., TNANO Sept. 2008 628-635Jinghua, T., see Xiaohong, T., TNANO July 2008 422-426Jo, Y., see Yoon, J., TNANO July 2008 409-411John, D. L., Limits to the Signal Delay in Ballistic, Nanoscale Transistors:

Semiclassical and Quantum Results; TNANO Jan. 2008 48-55Ju, S., see Yu, B., TNANO July 2008 496-502Juang, F. S., see Ji, L. W., TNANO Jan. 2008 1-4Jung, J. E., see Jang, J. E., TNANO July 2008 389-393Jung, M.-H., see Yoon, J., TNANO July 2008 409-411Jung, Y., see Minh, N. V., TNANO March 2008 177-180Jung, Y., see Kim, D., TNANO Nov. 2008 683-687Jung, Y. C., Cho, K. H., Hong, B. H., Son, S. H., Kim, D. S., Whang, D.,

Hwang, S. W., Yu , Y. S., and Ahn, D., Fabrication and Characterization ofSidewall Defined Silicon-on-Insulator Single-Electron Transistor; TNANOSept. 2008 544-550

Jurczak, M., see Baravelli, E., TNANO May 2008 291-298

K

Kalappa, P., Lee, J.-H., Rashmi, B. J., Venkatesha, T. V., Pai, K. V., and Xing,W., Effect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites; TNANO March 2008 223-228

Kamins, T. I., see Kumar, M. J., TNANO Nov. 2008 643-650Kang, D. J., see Jang, J. E., TNANO July 2008 389-393Kang, J., see Yan, B., TNANO July 2008 418-421Kang, M., see Kim, D., TNANO Nov. 2008 683-687Kanjilal, D., see Salah, N., TNANO Nov. 2008 749-753Kawai, A., see Mizugaki, Y., TNANO Sept. 2008 601-606Kawata, Y., Tsuchiya, Y., Oda, S., and Mizuta, H., Study of Single-Charge

Polarization on a Pair of Charge Qubits Integrated Onto a Silicon DoubleSingle-Electron Transistor Readout; TNANO Sept. 2008 617-623

Kawazoe, T., see Naruse, M., TNANO Jan. 2008 14-19Keun Kim, Y., see Yoon, J., TNANO July 2008 409-411Khan, Z. H., see Salah, N., TNANO Nov. 2008 749-753Khizroev, S., see Litvinov , D., TNANO July 2008 463-476Khoi, N. T., see Minh, N. V., TNANO March 2008 177-180Kim , T. G., see Kim, K. C., TNANO March 2008 135-139Kim, B., see Kim, D., TNANO Nov. 2008 683-687Kim, D., Jung, Y., Park, M., Kim, B., Hong, S., Choi, M., Kang, M., Yu, Y.,

Whang, D., and Hwang, S., Electrical Characteristics of the BackgatedBottom-Up Silicon Nanowire FETs; TNANO Nov. 2008 683-687

Kim, D. K., see Ide, K., TNANO March 2008 185-188Kim, D. M., see Tarakeshwar, P., TNANO March 2008 124-127Kim, D. S., see Jung, Y. C., TNANO Sept. 2008 544-550Kim, D.-W., see Suk, S. D., TNANO March 2008 181-184Kim, H. K., Hwang, J. S., Hwang, S. W., and Ahn, D., Faraday’s Induction

Experiment in Nano-Transformers; TNANO March 2008 120-123Kim, H. K., see Wuenschell, J., TNANO March 2008 229-236Kim, H.-G., see Yang, D.-J., TNANO March 2008 131-134Kim, J., see Jang, K.-S., TNANO March 2008 115-119Kim, J. H., and Menq, C.-H., Visually Servoed 3-D Alignment of Multiple

Objects with Subnanometer Precision; TNANO May 2008 321-330Kim, J. M., see Jang, J. E., TNANO July 2008 389-393Kim, J. S., Lee, C.-R., Kwack, H.-S., Choi, B. S., Sim, E., Lee, C. W., and Oh,

D. K., 1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers; TNANO March2008 128-130

Kim, J.-D., see Jang, K.-S., TNANO March 2008 115-119Kim, J.-H., see Wang, H., TNANO Sept. 2008 573-579Kim, J.-W., see Wang, H., TNANO Sept. 2008 573-579Kim, K., see Heo, J., TNANO March 2008 169-171Kim, K. C., Han , I. K., Yoo, Y. C., Lee , J. I., Sung , Y.M., and Kim , T. G.,

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes; TNANO March 2008 135-139

Kim, K.W., see Enaya, H., TNANO July 2008 480-483Kim, M. S., see Suk, S. D., TNANO March 2008 181-184Kim, R., and Lundstrom, M. S., Characteristic Features of 1-D Ballistic Trans-

port in Nanowire MOSFETs; TNANO Nov. 2008 787-794Kim, S., see Minh, N. V., TNANO March 2008 177-180Kim, S. H., see Suk, S. D., TNANO March 2008 181-184Kim, S. M., see Suk, S. D., TNANO March 2008 181-184Kim, T., see Heo, J., TNANO March 2008 169-171Kim, T., see Yoon, J., TNANO July 2008 409-411Kim, Y. C., see Ide, K., TNANO March 2008 185-188Kim, Y.-H., see Hong, S.-J., TNANO March 2008 172-176Klimeck, G., see Neophytou, N., TNANO Nov. 2008 710-719Knobel, R. G., see Allec, N., TNANO May 2008 351-354Kobayashi, T., see Mizugaki, Y., TNANO Sept. 2008 601-606Kojima , S., see Ahmad, M. R., TNANO Sept. 2008 607-616Kong, K.-j., see Buh, G.-H., TNANO Sept. 2008 624-627Kukushkin, V., Periodic Transient Inversion at Intersubband Laser Transitions

in Quantum Wells in an External Electric Field; TNANO May 2008 344-350Kumar, M. J., Reed , M. A., Amaratunga, G. A. J., Cohen, G. M., Janes, D. B.,

Lieber, C. M., Meyyappan, M., Wernersson, L.-E., Wang, K. L., Chau, R. S.,Kamins, T. I., Lundstrom, M., Yu, B., and Zhou, C., Guest Editorial SpecialIssue on Nanowire Transistors: Modeling, Device Design, and Technology;TNANO Nov. 2008 643-650

Kuo, S.-Y., see Chou, Y.-H., TNANO July 2008 484-492Kwack, H.-S., see Kim, J. S., TNANO March 2008 128-130Kwon, O., see Ide, K., TNANO March 2008 185-188Kwong, D. L., see Yang, W. F., TNANO Nov. 2008 728-732

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810 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

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La Ferrara, V., Alfano, B., Massera, E., and Di Francia, G., PalladiumNanowires Assembly by Dielectrophoresis Investigated as HydrogenSensors; TNANO Nov. 2008 776-781

Lang, X. Y., Zheng, W. T., and Jiang, Q., Finite-Size Effect on Band Structureand Photoluminescence of Semiconductor Nanocrystals; TNANO Jan. 20085-9

Lee , J. I., see Kim, K. C., TNANO March 2008 135-139Lee , J.-O., see Buh, G.-H., TNANO Sept. 2008 624-627Lee, C. W., see Kim, J. S., TNANO March 2008 128-130Lee, C.-H., see Lin, C.-H., TNANO Sept. 2008 558-564Lee, C.-R., see Kim, J. S., TNANO March 2008 128-130Lee, J., see Park, K., TNANO July 2008 427-433Lee, J.-H., see Kalappa, P., TNANO March 2008 223-228Lee, J.-H., see Yoo, S. K., TNANO Nov. 2008 745-748Lee, K.-S., see Choi, Y.-S., TNANO March 2008 107-110Lee, S. -Y., see Suk, S. D., TNANO March 2008 181-184Lee, S. E., see Ide, K., TNANO March 2008 185-188Lee, S. J., see Yang, W. F., TNANO Nov. 2008 728-732Lee, W. H., and Mazumder, P., Motion Detection by Quantum-Dots-Based Ve-

locity-Tuned Filter; TNANO May 2008 355-362Lee, Y. T., Woo, K., and Choi, K.-S., Preparation of Water-Dispersible and

Biocompatible Iron Oxide Nanoparticles for MRI Agent; TNANO March2008 111-114

Leverd, F., see Pouydebasque, A., TNANO Sept. 2008 551-557Li , W. J., see Qu, Y., TNANO Sept. 2008 565-572Li, M., see Suk, S. D., TNANO March 2008 181-184Li, M., Qu, Y., Dong, Z., Wang, Y., and Li, W. J., Limitations of Au Par-

ticle Nanoassembly Using Dielectrophoretic Force—A Parametric Experi-mental and Theoretical Study; TNANO July 2008 477-479

Li, S.-Y., see Donthu, S., TNANO May 2008 338-343Li, W. J., see Li, M., TNANO July 2008 477-479Li, W.-L., see Chen, Y.-C., TNANO July 2008 503-507Li, X., see Chun, I. S., TNANO July 2008 493-495Li, Y., see Lo, H.-Y., TNANO July 2008 434-439Liang, G. C., see Yang, W. F., TNANO Nov. 2008 728-732Liao, C. C., see Yan, B., TNANO July 2008 418-421Liao, M., see Yan, B., TNANO July 2008 418-421Liao, M.H., see Lin, C.-H., TNANO Sept. 2008 558-564Lieber, C. M., see Kumar, M. J., TNANO Nov. 2008 643-650Lilley, C. M., see Huang, Q., TNANO Nov. 2008 688-692Lin, C.-H., Yu, C.-Y., Chang, C.-C., Lee, C.-H., Yang, Y.-J., Ho , W. S., Chen

, Y.-Y., Liao, M.H., Cho, C.-T., Peng, C.-Y., and Liu, C.W., SiGe/SiQuantum-Dot Infrared Photodetectors With � Doping; TNANO Sept. 2008558-564

Lin, J.-F., see Han, C.-F., TNANO May 2008 256-265Lin, Y.-C., see Chen, Y.-C., TNANO July 2008 503-507Lin, Y.-R., see Chang, S.-J., TNANO Nov. 2008 754-759Litvinov , D., Parekh, V., E, C., Smith , D., Owen Rantschler, J., Ruchhoeft,

P., Weller, D., and Khizroev, S., Recording Physics, Design Considera-tions, and Fabrication of Nanoscale Bit-Patterned Media; TNANO July 2008463-476

Liu, C.W., see Lin, C.-H., TNANO Sept. 2008 558-564Liu, G., see Chu, M., TNANO May 2008 308-315Liu, J., see Zhu, Y., TNANO May 2008 305-307Liu, Q. H., see Huang, Y., TNANO May 2008 331-337Liu, X., see Yan, B., TNANO July 2008 418-421Lo, G. Q., see Theng, A. L., TNANO Nov. 2008 795-799Lo, H.-Y., Li, Y., Tsai, C.-H., (Robert) Chao, H.-Y., and Pan, F.-M., Effect of

Process Variation on Field Emission Characteristics in Surface-ConductionElectron Emitters; TNANO July 2008 434-439

Lochab, S. P., see Salah, N., TNANO Nov. 2008 749-753Long, D. H., see Minh, N. V., TNANO March 2008 177-180Loubet, N., see Pouydebasque, A., TNANO Sept. 2008 551-557Lu, X. F., see Xu, K. Y., TNANO July 2008 451-457Lugli, P., see Harrer, S., TNANO May 2008 363-370Lugli, P., see Becherer, M., TNANO May 2008 316-320Luisier, M., see Gnani, E., TNANO Nov. 2008 700-709Lundstrom, M., see Kumar, M. J., TNANO Nov. 2008 643-650Lundstrom, M. S., see Kim, R., TNANO Nov. 2008 787-794Luther-Davies, B., see Choi, D.-Y., TNANO May 2008 285-290

M

Madden, S., see Choi, D.-Y., TNANO May 2008 285-290Manoharan, M., Pruvost, B., Mizuta, H., and Oda, S., Impact of Key Circuit Pa-

rameters on Signal-to-Noise Ratio Characteristics for the Radio FrequencySingle-Electron Transistors; TNANO May 2008 266-272

Mansfield, L. M., see Blanchard, P. T., TNANO Nov. 2008 760-765Marrocco, V., see D’Orazio, A., TNANO Jan. 2008 10-13Martorell, F., Cotofana, S. D., and Rubio, A., An Analysis of Internal Param-

eter Variations Effects on Nanoscaled Gates; TNANO Jan. 2008 24-33Massera, E., see La Ferrara, V., TNANO Nov. 2008 776-781Massoud, Y., see Nieuwoudt, A., TNANO March 2008 189-196Matias, I. R., see Corres, J. M., TNANO July 2008 394-400Mazumder, P., see Lee, W. H., TNANO May 2008 355-362Mee Koy, C., see Xiaohong, T., TNANO July 2008 422-426Menq, C.-H., see Kim, J. H., TNANO May 2008 321-330Mescia, L., see Calo, G., TNANO May 2008 273-284Meyer, K., see Baravelli, E., TNANO May 2008 291-298Meyyappan , M., see Yu, B., TNANO July 2008 496-502Meyyappan, M., see Kumar, M. J., TNANO Nov. 2008 643-650Min Kim, Y., see Park, K., TNANO July 2008 427-433Minh, N. V., Long, D. H., Khoi, N. T., Jung, Y., Kim, S., and Yang, I. S., Raman

Studies of �� �� � Nanoparticles; TNANO March 2008 177-180Miyoshi , T., see Mori, T., TNANO March 2008 237-241Mizugaki, Y., Takiguchi, M., Hayami, S., Kawai, A., Moriya, M., Usami, K.,

Kobayashi, T., and Shimada, H., Single-Electron Devices With Input Dis-cretizer; TNANO Sept. 2008 601-606

Mizuta, H., see Manoharan, M., TNANO May 2008 266-272Mizuta, H., see Kawata, Y., TNANO Sept. 2008 617-623Mo, C. B., see Ryu, S.-W., TNANO March 2008 145-150Moheimani, S. O. R., see Aphale, S. S., TNANO Jan. 2008 79-90Moheimani, S. O. R., see Sebastian, A., TNANO Sept. 2008 586-595Mori, T., Azuma, Y., Tsuchiya, H., and Miyoshi , T., Comparative Study on

Drive Current of III–V Semiconductor, Ge and Si Channel n- MOSFETsbased on Quantum-Corrected Monte Carlo Simulation; TNANO March2008 237-241

Moriya, M., see Mizugaki, Y., TNANO Sept. 2008 601-606Moselund , K. E., see Pott, V., TNANO Nov. 2008 733-744Mushtaq, U., see Hu, Y., TNANO Nov. 2008 693-699Myung, N. V., see Rheem, Y., TNANO May 2008 251-255

N

Nadarajah, S., Comments on “Electron and Hole Current Characteristics ofn-i-p-Type Semiconductor Quantum Dot Transistor”; TNANO Jan. 2008100-101

Nagarajan, R., see Gopi, K. R., TNANO Sept. 2008 532-537Nakajima, M., see Ahmad, M. R., TNANO Sept. 2008 607-616Naruse, M., Yatsui, T., Kawazoe, T., Akao, Y., and Ohtsu, M., Design and

Simulation of a Nanophotonic Traceable Memory Using Localized EnergyDissipation and Hierarchy of Optical Near-Field Interactions; TNANO Jan.2008 14-19

Nelson, B. J., see Dong, L., TNANO July 2008 508-517Neophytou, N., Paul , A., and Klimeck, G., Bandstructure Effects in Silicon

Nanowire Hole Transport; TNANO Nov. 2008 710-719Newton, M. C., Firth, S., and Warburton, P. A., Photoresponse of ZnO Tetrapod

Nanocrystal Schottky Diodes; TNANO Jan. 2008 20-23Ng, C. M., see Theng, A. L., TNANO Nov. 2008 795-799Niemier, M., see Crocker, M., TNANO May 2008 376-386Nieuwoudt, A., Hosseini , A., and Massoud, Y., On the Design of Dielectric

Strip Plasmonic Structures for Subwavelength Waveguiding Applications;TNANO March 2008 189-196

O

Oda, S., see Manoharan, M., TNANO May 2008 266-272Oda, S., see Kawata, Y., TNANO Sept. 2008 617-623Oh, C. W., see Suk, S. D., TNANO March 2008 181-184Oh, D. K., see Kim, J. S., TNANO March 2008 128-130Ohtsu, M., see Naruse, M., TNANO Jan. 2008 14-19Ouyang, M., see Qu, Y., TNANO Sept. 2008 565-572Owen Rantschler, J., see Litvinov , D., TNANO July 2008 463-476

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 811

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Pai, K. V., see Kalappa, P., TNANO March 2008 223-228Palacios, J. J., see Tarakeshwar, P., TNANO March 2008 124-127Palacios, J. J., see Calvo, M. R., TNANO March 2008 165-168Pan, F.-M., see Lo, H.-Y., TNANO July 2008 434-439Pan, Z., see Donthu, S., TNANO May 2008 338-343Pantazi, A., see Sebastian, A., TNANO Sept. 2008 586-595Parekh, V., see Litvinov , D., TNANO July 2008 463-476Park, D., see Suk, S. D., TNANO March 2008 181-184Park, D.-Y., see Rheem, Y., TNANO May 2008 251-255Park, K., Min Kim, Y., Choi, B. -K., Han, K.-R., and Lee, J., Design Consid-

eration of Bulk FinFETs Devices With � /� /� Gate and � /� Gatefor Sub-50-nm DRAM Cell Transistors; TNANO July 2008 427-433

Park, M., see Kim, D., TNANO Nov. 2008 683-687Park, S.-Y., see Yoon, J., TNANO July 2008 409-411Passaro, V. M. N., and Dell Olio, F., Scaling and Optimization of MOS Optical

Modulators in Nanometer SOI Waveguides; TNANO July 2008 401-408Patibandla, S., see Varfolomeev, A., TNANO Nov. 2008 800-805Paul , A., see Neophytou, N., TNANO Nov. 2008 710-719Paul, B., see Akinwande, D., TNANO Sept. 2008 636-639Peng, C.-Y., see Lin, C.-H., TNANO Sept. 2008 558-564Perello, D., see Hu, Y., TNANO Nov. 2008 693-699Petruzzelli, V., see D’Orazio, A., TNANO Jan. 2008 10-13Petruzzelli, V., see Calo, G., TNANO May 2008 273-284Philip Wong, H.-S., see Akinwande, D., TNANO Sept. 2008 636-639Pisana, S., Zhang, C., Ducati, C., Hofmann, S., and Robertson, J., Enhanced

Subthreshold Slopes in Large Diameter Single Wall Carbon Nanotube FieldEffect Transistors; TNANO July 2008 458-462

Porod, W., see Becherer, M., TNANO May 2008 316-320Pott, V., Moselund , K. E., Bouvet , D., De Michielis, L., and Ionescu, A. M.,

Fabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon; TNANO Nov. 2008 733-744

Pouydebasque, A., Denorme, S., Loubet, N., Wacquez, R., Bustos, J., Leverd,F., Deloffre, E., Barnola, S., Dutartre, D., Coronel, P., and Skotnicki, T.,High-Performance High-�/Metal Planar Self-Aligned Gate-All-AroundCMOS Devices; TNANO Sept. 2008 551-557

Pozidis , H., see Sebastian, A., TNANO Sept. 2008 586-595Provine, J., see Skinner, J. L., TNANO Sept. 2008 527-531Prudenzano, F., see D’Orazio, A., TNANO Jan. 2008 10-13Prudenzano, F., see Calo, G., TNANO May 2008 273-284Pruvost, B., see Manoharan, M., TNANO May 2008 266-272

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Qu, Y., see Li, M., TNANO July 2008 477-479Qu, Y., Chow, W. W. Y., Ouyang, M., Tung, S. C. H., Li , W. J., and Han,

X., Ultra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems; TNANO Sept. 2008 565-572

Quintero-Torres, R., A Model for the Self Structuring of Nanotubes in Tita-nium Oxide; TNANO May 2008 371-375

R

Rana, F., Graphene Terahertz Plasmon Oscillators; TNANO Jan. 2008 91-99Ranjan, R., see Salah, N., TNANO Nov. 2008 749-753Rashmi, B. J., see Kalappa, P., TNANO March 2008 223-228Raychowdhury, A., see Coker, A., TNANO March 2008 202-208Razansky, D., Einziger, P. D., and Adam , D., Cavity Plasmon Resonance

Biosensing; TNANO Sept. 2008 580-585Reed , M. A., see Kumar, M. J., TNANO Nov. 2008 643-650Reggiani, S., see Gnani, E., TNANO Nov. 2008 700-709Requicha, A., Editorial [Special section intro.]; TNANO March 2008 105-106Rheem, Y., Hangarter, C. M., Yang, E.-H., Park, D.-Y., Myung, N. V., and Yoo,

B. V., Site-Specific Magnetic Assembly of Nanowires for Sensor ArraysFabrication; TNANO May 2008 251-255

Robertson, J., see Pisana, S., TNANO July 2008 458-462Rode, A., see Choi, D.-Y., TNANO May 2008 285-290Roh Rhee, J., see Yoon, J., TNANO July 2008 409-411Roy, K., see Coker, A., TNANO March 2008 202-208Rubio, A., see Martorell, F., TNANO Jan. 2008 24-33Ruchhoeft, P., see Litvinov , D., TNANO July 2008 463-476

Rupasov, A. A., see Salah, N., TNANO Nov. 2008 749-753Ryu, S.-W., Mo, C. B., Hong, S. H., and Choi, Y.-K., Nonvolatile Memory

Characteristics of NMOSFET With Ag Nanocrystals Synthesized via aThermal Decomposition Process for Uniform Device Distribution; TNANOMarch 2008 145-150

S

Salah, N., Habib, S. S., Khan, Z. H., Lochab, S. P., Kanjilal, D., Ranjan, R.,Aleynikov, V. E., and Rupasov, A. A., Nanorods of LiF:Mg,Cu,P as Detec-tors for Mixed Field Radiations; TNANO Nov. 2008 749-753

Sanders, A. W., see Blanchard, P. T., TNANO Nov. 2008 760-765Sanford, N. A., see Blanchard, P. T., TNANO Nov. 2008 760-765Sanquer, M., see Hofheinz, M., TNANO Jan. 2008 74-78Scarpa, G., see Harrer, S., TNANO May 2008 363-370Schmitt-Landsiedel, D., see Becherer, M., TNANO May 2008 316-320Sebastian, A., Pantazi, A., Moheimani, S. O. R., Pozidis , H., and Eleftheriou,

E., Achieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process; TNANO Sept. 2008 586-595

Semancik, S., see Donthu, S., TNANO May 2008 338-343Semenov, Y. G., see Enaya, H., TNANO July 2008 480-483Shang, L., see Allec, N., TNANO May 2008 351-354Sharon Hu, X., see Crocker, M., TNANO May 2008 376-386Shekhawat, G., see Donthu, S., TNANO May 2008 338-343Shen, G., see Chen, P.-C., TNANO Nov. 2008 668-682Shimada, H., see Mizugaki, Y., TNANO Sept. 2008 601-606Shou, K., see Dong, L., TNANO July 2008 508-517Shukla, S., see Coker, A., TNANO March 2008 202-208Sim, E., see Kim, J. S., TNANO March 2008 128-130Skinner, J. L., Hunter, L. L., Talin, A. A., Provine, J., and Horsley, D. A.,

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography; TNANO Sept. 2008 527-531

Skotnicki, T., see Hofheinz, M., TNANO Jan. 2008 74-78Skotnicki, T., see Pouydebasque, A., TNANO Sept. 2008 551-557Smith , D., see Litvinov , D., TNANO July 2008 463-476So , H.-M., see Buh, G.-H., TNANO Sept. 2008 624-627Son, S. H., see Jung, Y. C., TNANO Sept. 2008 544-550Song Kim, Y., see Yoon, J., TNANO July 2008 409-411Song, A. M., see Xu, K. Y., TNANO July 2008 451-457Speciale, N., see Baravelli, E., TNANO May 2008 291-298Strobel, S., see Harrer, S., TNANO May 2008 363-370Su, P., see Wu, Y.-S., TNANO May 2008 299-304Su, P., see Chen, W. P.-N., TNANO Sept. 2008 538-543Su, Y.-K., see Chen, Y.-C., TNANO July 2008 503-507Subramanian, A., see Dong, L., TNANO July 2008 508-517Suk, S. D., Yeo, K. H., Cho, K. H., Li, M., Yeoh, Y. Y., Lee, S. -Y., Kim, S.

M., Yoon, E. J., Kim, M. S., Oh, C. W., Kim, S. H., Kim, D.-W., and Park,D., High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) onBulk Si Wafer; TNANO March 2008 181-184

Sulieman, M. H., see Ibrahim, W., TNANO Jan. 2008 56-67Sun Chun, B., see Yoon, J., TNANO July 2008 409-411Sun, F., Feng, L., and Zhang, T., Run-Time Data-Dependent Defect Tolerance

for Hybrid CMOS/Nanodevice Digital Memories; TNANO March 2008217-222

Sun, X., see Yu, B., TNANO July 2008 496-502Sun, Z. Q., see Yang, W. F., TNANO Nov. 2008 728-732Sung , Y.M., see Kim, K. C., TNANO March 2008 135-139

T

Takiguchi, M., see Mizugaki, Y., TNANO Sept. 2008 601-606Talin, A. A., see Skinner, J. L., TNANO Sept. 2008 527-531Tao Zheng, W., see Yu, S. S., TNANO Sept. 2008 628-635Tao, X., see Dong, L., TNANO July 2008 508-517Tarakeshwar, P., Palacios, J. J., and Kim, D. M., Interface Study of Metal Elec-

trode and Semiconducting Carbon Nanotubes: Effects of Electrode AtomicSpecies; TNANO March 2008 124-127

Taylor, V., see Coker, A., TNANO March 2008 202-208Theng, A. L., Goh, W. L., Lo, G. Q., Chan, L., and Ng, C. M., Dual Nanowire

Silicon MOSFET With Silicon Bridge and TaN Gate; TNANO Nov. 2008795-799

Thompson, M. E., see Curreli, M., TNANO Nov. 2008 651-667Tornow, M., see Harrer, S., TNANO May 2008 363-370

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812 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Tsai , I-M., see Chou, Y.-H., TNANO July 2008 484-492Tsai, C.-H., see Lo, H.-Y., TNANO July 2008 434-439Tsuchiya, H., see Mori, T., TNANO March 2008 237-241Tsuchiya, Y., see Kawata, Y., TNANO Sept. 2008 617-623Tung, S., see Wang, H., TNANO Sept. 2008 573-579Tung, S. C. H., see Qu, Y., TNANO Sept. 2008 565-572

U

Untiedt, C., see Calvo, M. R., TNANO March 2008 165-168Usami, K., see Mizugaki, Y., TNANO Sept. 2008 601-606

V

Varfolomeev, A., Patibandla, S., and Bandyopadhyay, S., Self-AssembledNanowire Arrays of Metal–Insulator–Semiconductor Diodes ExhibitingS-Type Nonlinearity; TNANO Nov. 2008 800-805

Vazquez, M., see Jaafar, M., TNANO May 2008 245-250Venkatesha, T. V., see Kalappa, P., TNANO March 2008 223-228Verma, V. P., Jeon, H., Hwang, S., Jeon, M., and Choi, W., Enhanced Electrical

Conductance of ZnO Nanowire FET by Nondestructive Surface Cleaning;TNANO Nov. 2008 782-786

W

Wacquez, R., see Pouydebasque, A., TNANO Sept. 2008 551-557Wan, J., Cahay, M., and Bandyopadhyay, S., Spin Injection Efficiency at the

Source/Channel Interface of Spin Transistors; TNANO Jan. 2008 34-39Wang, G., see Xu, K. Y., TNANO July 2008 451-457Wang, H., Kim, J.-H., Zou, M., Tung, S., and Kim, J.-W., Adhesion Study of

Escherichia coli Cells on Nano-/Microtextured Surfaces in a MicrofluidicSystem; TNANO Sept. 2008 573-579

Wang, J. P., see Yan, B., TNANO July 2008 418-421Wang, K. L., see Kumar, M. J., TNANO Nov. 2008 643-650Wang, R., see Choi, D.-Y., TNANO May 2008 285-290Wang, Y., see Li, M., TNANO July 2008 477-479Warburton, P. A., see Newton, M. C., TNANO Jan. 2008 20-23Wei, L., Deng , J., and Wong, H.-S. P., Modeling and Performance Compar-

ison of 1-D and 2-D Devices Including Parasitic Gate Capacitance andScreening Effect; TNANO Nov. 2008 720-727

Weller, D., see Litvinov , D., TNANO July 2008 463-476Wernersson, L.-E., see Kumar, M. J., TNANO Nov. 2008 643-650Whang, D., see Jung, Y. C., TNANO Sept. 2008 544-550Whang, D., see Kim, D., TNANO Nov. 2008 683-687Wong, H.-S. P., see Close, G. F., TNANO Sept. 2008 596-600Wong, H.-S. P., see Wei, L., TNANO Nov. 2008 720-727Wong, W., see Yan, B., TNANO July 2008 418-421Woo, K., see Lee, Y. T., TNANO March 2008 111-114Wu, N. -J., see Zhang, W.-C., TNANO July 2008 440-450Wu, Y.-S., and Su, P., Sensitivity of Multigate MOSFETs to Process Varia-

tions–-An Assessment Based on Analytical Solutions of 3-D Poisson’sEquation; TNANO May 2008 299-304

Wuenschell, J., and Kim, H. K., Excitation and Propagation of Surface Plas-mons in a Metallic Nanoslit Structure; TNANO March 2008 229-236

X

Xia, Z., see Yan, B., TNANO July 2008 418-421Xiaohong, T., Zongyou, Y., Jinghua, T., Anyan, D., and Mee Koy, C., Selec-

tive Intermixing of InAs/InGaAs/InP Quantum Dot Structure With LargeEnergy Band Gap Tuning; TNANO July 2008 422-426

Xing, W., see Kalappa, P., TNANO March 2008 223-228Xu, K. Y., Lu, X. F., Wang, G., and Song, A. M., Strong Spatial Dependence

of Electron Velocity, Density, and Intervalley Scattering in an AsymmetricNanodevice in the Nonlinear Transport Regime; TNANO July 2008 451-457

Y

Yan, B., Yang, J., Xia, Z., Liu, X., Du, G., Han, R., Kang, J., Liao, C. C., Gan, Z.,Liao, M., Wang, J. P., and Wong, W., Anomalous Negative Bias Temper-ature Instability Degradation Induced by Source/Drain Bias in NanoscalePMOS Devices; TNANO July 2008 418-421

Yan, M., see Crocker, M., TNANO May 2008 376-386Yang , Q., Jagannathan, S., and Bohannan, E. W., Automatic Drift Compen-

sation Using Phase Correlation Method for Nanomanipulation; TNANOMarch 2008 209-216

Yang, D.-J., Kim, H.-G., Cho, S.-J., and Choi, W.-Y., Vertically Oriented Ti-tania Nanotubes Prepared by Anodic Oxidation on Si Substrates; TNANOMarch 2008 131-134

Yang, E.-H., see Rheem, Y., TNANO May 2008 251-255Yang, H.-M., see Jang, K.-S., TNANO March 2008 115-119Yang, I. S., see Minh, N. V., TNANO March 2008 177-180Yang, J., see Yan, B., TNANO July 2008 418-421Yang, S., see Yoo, S. K., TNANO Nov. 2008 745-748Yang, W. F., Lee, S. J., Liang, G. C., Eswar, R., Sun, Z. Q., and Kwong, D.

L., Temperature Dependence of Carrier Transport of a Silicon NanowireSchottky-Barrier Field-Effect Transistor; TNANO Nov. 2008 728-732

Yang, Y.-J., see Lin, C.-H., TNANO Sept. 2008 558-564Yasuda, S., see Akinwande, D., TNANO Sept. 2008 636-639Yatsui, T., see Naruse, M., TNANO Jan. 2008 14-19Yeh, C.-H., see Chen, Y.-C., TNANO July 2008 503-507Yeo, K. H., see Suk, S. D., TNANO March 2008 181-184Yeoh, Y. Y., see Suk, S. D., TNANO March 2008 181-184Yin, W.-Y, see Huang, Y., TNANO May 2008 331-337Yoo, B. V., see Rheem, Y., TNANO May 2008 251-255Yoo, S. K., Yang, S., and Lee, J.-H., Hydrogen Ion Sensing Using Schottky

Contacted Silicon Nanowire FETs; TNANO Nov. 2008 745-748Yoo, Y. C., see Kim, K. C., TNANO March 2008 135-139Yoon, E. J., see Suk, S. D., TNANO March 2008 181-184Yoon, J., Park, S.-Y., Jo, Y., Jung, M.-H., You, C.-Y., Kim, T., Youn Hwang,

J., In Yim, H., Roh Rhee, J., Sun Chun, B., Song Kim, Y., and Keun Kim,Y., Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films; TNANO July 2008 409-411

You, C.-Y., see Yoon, J., TNANO July 2008 409-411Youn Hwang, J., see Yoon, J., TNANO July 2008 409-411Young, S. J., see Ji, L. W., TNANO Jan. 2008 1-4Yu , Y. S., see Jung, Y. C., TNANO Sept. 2008 544-550Yu, B., Sun, X., Ju, S., Janes, D. B., and Meyyappan , M., Chalco-

genide-Nanowire-Based Phase Change Memory; TNANO July 2008496-502

Yu, B., see Kumar, M. J., TNANO Nov. 2008 643-650Yu, C.-Y., see Lin, C.-H., TNANO Sept. 2008 558-564Yu, S. S., Tao Zheng, W., and Jiang, Q., Oxidation of Graphene Nanoribbon by

Molecular Oxygen; TNANO Sept. 2008 628-635Yu, Y., see Kim, D., TNANO Nov. 2008 683-687Yun, M., see Hu, Y., TNANO Nov. 2008 693-699

Z

Zavada, J.M., see Enaya, H., TNANO July 2008 480-483Zhang , L., see Dong, L., TNANO July 2008 508-517Zhang, C., see Pisana, S., TNANO July 2008 458-462Zhang, R., see Curreli, M., TNANO Nov. 2008 651-667Zhang, T., see Sun, F., TNANO March 2008 217-222Zhang, W.-C., and Wu, N. -J., Smart Universal Multiple-Valued Logic Gates

by Transferring Single Electrons; TNANO July 2008 440-450Zhang, X., see Zhao, Y., TNANO Jan. 2008 40-47Zhang, X., see Dong, L., TNANO July 2008 508-517Zhao, Y., and Zhang, X., Profile Control in Silicon Nanostructures Using Flu-

orine-Enhanced Oxide Passivation; TNANO Jan. 2008 40-47Zheng, W. T., see Lang, X. Y., TNANO Jan. 2008 5-9Zhou, C., see Curreli, M., TNANO Nov. 2008 651-667Zhou, C., see Chen, P.-C., TNANO Nov. 2008 668-682Zhou, C., see Kumar, M. J., TNANO Nov. 2008 643-650Zhu, Y., and Liu, J., A TiSi �Si Heteronanocrystal Memory Operated With Hot

Carrier Injections; TNANO May 2008 305-307Zongyou, Y., see Xiaohong, T., TNANO July 2008 422-426Zou, M., see Wang, H., TNANO Sept. 2008 573-579

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 813

SUBJECT INDEX

A

Ab initio calculationsInterface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

AddersOn the Reliability of Majority Gates Full Adders. Ibrahim, W., +, TNANOJan. 2008 56-67

AdditivesDevelopment of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

AdhesionAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

AdsorptionHighly Sensitive ZnO Nanowire Acetone Vapor Sensor With Au Adsorption.Chang, S.-J., +, TNANO Nov. 2008 754-759

Preparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

AluminaAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Two-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

AluminiumA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Adhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Assembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Aluminium compounds1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Characterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Amorphous magnetic materialsStructural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Amorphous semiconductorsAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

AnisotropyBandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

AnnealingImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

AnodizationVertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on SiSubstrates. Yang, D.-J., +, TNANO March 2008 131-134

Antiferromagnetic materialsMagnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Arsenic compoundsSurface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Atom-photon collisionsEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Atomic force microscopyAutomatic Drift Compensation Using Phase Correlation Method forNanomanipulation. Yang , Q., +, TNANO March 2008 209-216

Determining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

Directed Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

B

Ballistic transportCharacteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs.Kim, R., +, TNANO Nov. 2008 787-794

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Band structureBand Effects on the Transport Characteristics of Ultrascaled SNW-FETs.Gnani, E., +, TNANO Nov. 2008 700-709

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Bandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

Barium compoundsImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

BiomechanicsIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Biomedical MRIPreparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

BioMEMSAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

BiosensorsCavity Plasmon Resonance Biosensing. Razansky, D., +, TNANO Sept. 2008580-585

Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs.Yoo, S. K., +, TNANO Nov. 2008 745-748

Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs. Curreli, M., +, TNANO Nov. 2008 651-667

Bipolar transistorsLimits to the Signal Delay in Ballistic, Nanoscale Transistors: Semiclassicaland Quantum Results. John, D. L., +, TNANO Jan. 2008 48-55

Spin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Boolean algebraQuantum Boolean Circuits are 1-Testable. Chou, Y.-H., +, TNANO July 2008484-492

Boron alloysStructural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Brownian motionLimitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

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814 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

C

Cadmium compoundsFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Fluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

CalibrationCalibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

CancerReal-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs. Curreli, M., +, TNANO Nov. 2008 651-667

CantileversIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Visually Servoed 3-D Alignment of Multiple Objects with SubnanometerPrecision. Kim, J. H., +, TNANO May 2008 321-330

CapacitanceA Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

Improvement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Modeling and Performance Comparison of 1-D and 2-D Devices IncludingParasitic Gate Capacitance and Screening Effect. Wei, L., +, TNANO Nov.2008 720-727

CarbonDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

Oxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Carbon nanotubesA Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Assembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Effect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

Engineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

Enhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

Monolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Performance Prediction of Carbon Nanotube Bundle Dipole Antennas.Huang, Y., +, TNANO May 2008 331-337

Ultra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

Carrier mobilityInvestigation of Coulomb Mobility in Nanoscale Strained PMOSFETs.Chen, W. P.-N., +, TNANO Sept. 2008 538-543

CatalysisImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Cavity resonator filtersPhotonic Crystal Drop Filter Exploiting Resonant Cavity Configuration.D’Orazio, A., +, TNANO Jan. 2008 10-13

CCD image sensorsAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Cellular automataPLAs in Quantum-Dot Cellular Automata. Crocker, M., +, TNANO May2008 376-386

Cellular biophysicsIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Adhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

CeramicsAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Directed Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Chalcogenide glassesChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Charge carrier mobilityFabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon. Pott, V., +, TNANO Nov. 2008 733-744

Charge density wavesGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

Charged particlesNanorods of LiF:Mg,Cu,P as Detectors for Mixed Field Radiations. Salah,N., +, TNANO Nov. 2008 749-753

Chemical interdiffusionSelective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

Chemical sensorsAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Chemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanos-tructures. Chen, P.-C., +, TNANO Nov. 2008 668-682

Oxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Chemical vapor depositionDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

Chemisorbed layersOxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

ChromiumImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Chromium alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Circuit reliabilityOn the Reliability of Majority Gates Full Adders. Ibrahim, W., +, TNANOJan. 2008 56-67

CladdingsTwo-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

Closed loop systemsMinimizing Scanning Errors in Piezoelectric Stack-Actuated Nanoposi-tioning Platforms. Aphale, S. S., +, TNANO Jan. 2008 79-90

CMOS analog integrated circuitsMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

CMOS integrated circuitsFabrication and Characterization of Sidewall Defined Silicon-on-InsulatorSingle-Electron Transistor. Jung, Y. C., +, TNANO Sept. 2008 544-550

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 815

High-Performance High-�/Metal Planar Self-Aligned Gate-All-AroundCMOS Devices. Pouydebasque, A., +, TNANO Sept. 2008 551-557

CMOS logic circuitsAn Analysis of Internal Parameter Variations Effects on Nanoscaled Gates.Martorell, F., +, TNANO Jan. 2008 24-33

CMOS memory circuitsRun-Time Data-Dependent Defect Tolerance for Hybrid CMOS/NanodeviceDigital Memories. Sun, F., +, TNANO March 2008 217-222

CoatingsTwo-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

CobaltMagnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Cobalt alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Coercive forceCalibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

CoilsDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

ColloidsLimitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

Conduction bandsFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Contact resistanceAssembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Control system synthesisMinimizing Scanning Errors in Piezoelectric Stack-Actuated Nanoposi-tioning Platforms. Aphale, S. S., +, TNANO Jan. 2008 79-90

Cooper pairsSEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices.Allec, N., +, TNANO May 2008 351-354

Coulomb blockadeA Nanodamascene Process for Advanced Single-Electron Transistor Fabri-cation. Dubuc, C., +, TNANO Jan. 2008 68-73

Measurement of Capacitances in Multigate Transistors by CoulombBlockade Spectroscopy. Hofheinz, M., +, TNANO Jan. 2008 74-78

SEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices.Allec, N., +, TNANO May 2008 351-354

Single-Electron Devices With Input Discretizer. Mizugaki, Y., +, TNANOSept. 2008 601-606

CrystallizationAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Current density1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Improvement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Current distributionPerformance Prediction of Carbon Nanotube Bundle Dipole Antennas.Huang, Y., +, TNANO May 2008 331-337

D

DampingA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

DeformationDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

Mechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

Density functional theoryOxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Dielectric devicesHigh-Performance High-�/Metal Planar Self-Aligned Gate-All-AroundCMOS Devices. Pouydebasque, A., +, TNANO Sept. 2008 551-557

Dielectric materialsOn the Design of Dielectric Strip Plasmonic Structures for SubwavelengthWaveguiding Applications. Nieuwoudt, A., +, TNANO March 2008 189-196

Differential equationsA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Diffraction gratingsDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Effects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Digital-analogue conversionSingle-Electron Devices With Input Discretizer. Mizugaki, Y., +, TNANOSept. 2008 601-606

Dipole antennasPerformance Prediction of Carbon Nanotube Bundle Dipole Antennas.Huang, Y., +, TNANO May 2008 331-337

DiseasesIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

DissociationAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Distributed feedback lasers1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Doping profilesImpact of LER and Random Dopant Fluctuations on FinFET Matching Per-formance. Baravelli, E., +, TNANO May 2008 291-298

Sensitivity of Multigate MOSFETs to Process Variations–-An AssessmentBased on Analytical Solutions of 3-D Poisson’s Equation. Wu, Y.-S., +,TNANO May 2008 299-304

DosimetryNanorods of LiF:Mg,Cu,P as Detectors for Mixed Field Radiations. Salah,N., +, TNANO Nov. 2008 749-753

DRAM chipsDesign Consideration of Bulk FinFETs Devices With � /� /� Gate and� /� Gate for Sub-50-nm DRAM Cell Transistors. Park, K., +, TNANOJuly 2008 427-433

DuctilityA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

E

ElasticityFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

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816 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

ElastoplasticityA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Electric admittanceSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Electric breakdownEngineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

Electric sensing devicesOn-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Electrical conductivityMechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

Electrical contactsInterface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

Electrical propertiesElectrical Failure Analysis of Au Nanowires. Huang, Q., +, TNANO Nov.2008 688-692

Electrical resistivityEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

Electro-optical modulationScaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

ElectrochemistryA Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

ElectrodepositionSite-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

ElectrodesInterface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

ElectroluminescenceThe Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

ElectrolytesA Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

ElectromigrationElectrical Failure Analysis of Au Nanowires. Huang, Q., +, TNANO Nov.2008 688-692

Electron beam depositionEngineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

Electron beam lithographyDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

ElectrophoresisLimitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

Electrophoresis depositionA Single Palladium Nanowire Via Electrophoresis Deposition Used as a Ul-trasensitive Hydrogen Sensor. Hu, Y., +, TNANO Nov. 2008 693-699

Elemental semiconductorsA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Finite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on BulkSi Wafer. Suk, S. D., +, TNANO March 2008 181-184

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers. Ide, K., +, TNANO March 2008 185-188

Monolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Profile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

Study of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

ElongationFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Energy gapOxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

Exchange interactions (electron)Nonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

F

Failure analysisElectrical Failure Analysis of Au Nanowires. Huang, Q., +, TNANO Nov.2008 688-692

Fault toleranceMultijunction Fault-Tolerance Architecture for Nanoscale Crossbar Memo-ries. Coker, A., +, TNANO March 2008 202-208

Ferroelectric capacitorsImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Ferromagnetic materialsMagnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

Nonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

FerromagnetismSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Field effect transistorsComments on “Electron and Hole Current Characteristics of n-i-p-TypeSemiconductor Quantum Dot Transistor”. Nadarajah, S., +, TNANO Jan.2008 100-101

Design Consideration of Bulk FinFETs Devices With � /� /� Gate and� /� Gate for Sub-50-nm DRAM Cell Transistors. Park, K., +, TNANOJuly 2008 427-433

Electrical Characteristics of the Backgated Bottom-Up Silicon NanowireFETs. Kim, D., +, TNANO Nov. 2008 683-687

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 817

Enhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs.Yoo, S. K., +, TNANO Nov. 2008 745-748

Limits to the Signal Delay in Ballistic, Nanoscale Transistors: Semiclassicaland Quantum Results. John, D. L., +, TNANO Jan. 2008 48-55

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs. Curreli, M., +, TNANO Nov. 2008 651-667

Spice Modeling of Silicon Nanowire Field-Effect Transistors forHigh-Speed Analog Integrated Circuits. Hamedi-Hagh, S., +, TNANONov. 2008 766-775

Spin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Field emitter arraysEffect of Process Variation on Field Emission Characteristics in Surface-Conduction Electron Emitters. Lo, H.-Y., +, TNANO July 2008 434-439

Filled polymersEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

Finite difference methodsOn the Design of Dielectric Strip Plasmonic Structures for SubwavelengthWaveguiding Applications. Nieuwoudt, A., +, TNANO March 2008 189-196

Photonic Crystal Drop Filter Exploiting Resonant Cavity Configuration.D’Orazio, A., +, TNANO Jan. 2008 10-13

Flash memoriesA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

Flow sensorsUltra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

FluorescenceFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Focused ion beam technologyMagnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

G

Gallium arsenide1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers. Ide, K., +, TNANO March 2008 185-188

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Gallium compoundsMOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

Gallium nitrideMESFETs Made From Individual GaN Nanowires. Blanchard, P. T., +,TNANO Nov. 2008 760-765

Gas sensorsDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Ge-Si alloysSiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Genetic algorithmsA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

GermaniumComparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Germanium compoundsChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Glass structureSurface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Global Positioning SystemAchieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process. Sebastian, A., +, TNANO Sept. 2008586-595

GoldAssembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

Limitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

GraphiteGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

GrippersA Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Ground statesOptical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

H

Heat transferUltra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

Heat treatmentLarge-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

HF amplifiersMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

High frequencySpice Modeling of Silicon Nanowire Field-Effect Transistors forHigh-Speed Analog Integrated Circuits. Hamedi-Hagh, S., +, TNANONov. 2008 766-775

Spice Modeling of Silicon Nanowire Field-Effect Transistors forHigh-Speed Analog Integrated Circuits. Hamedi-Hagh, S., +, TNANONov. 2008 766-775

High-speed optical techniquesPeriodic Transient Inversion at Intersubband Laser Transitions in QuantumWells in an External Electric Field. Kukushkin, V., +, TNANO May 2008344-350

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818 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Hot carriersA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

Humidity controlIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Humidity sensorsTwo-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

Hybrid integrated circuitsMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

HydrogenPalladium Nanowires Assembly by Dielectrophoresis Investigated as Hy-drogen Sensors. La Ferrara, V., +, TNANO Nov. 2008 776-781

Hydrogen sensorsA Single Palladium Nanowire Via Electrophoresis Deposition Used as a Ul-trasensitive Hydrogen Sensor. Hu, Y., +, TNANO Nov. 2008 693-699

I

II-VI semiconductorsFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Fluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

III-V semiconductorsComparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

ImpuritiesSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Impurity distributionImpact of LER and Random Dopant Fluctuations on FinFET Matching Per-formance. Baravelli, E., +, TNANO May 2008 291-298

IndentationA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Indium compounds1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Chalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

Development of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

InductanceFaraday’s Induction Experiment in Nano-Transformers. Kim, H. K., +,TNANO March 2008 120-123

Information theoryInformation Acquisition at the Nanoscale: Fundamental Considerations. An-derson, N. G., +, TNANO Sept. 2008 521-526

Infrared detectorsSiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Ink jet printersDevelopment of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

Integrated circuit interconnectionsA Nanodamascene Process for Advanced Single-Electron Transistor Fabri-cation. Dubuc, C., +, TNANO Jan. 2008 68-73

Assembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Integrated circuitsUltra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

Integrated opticsScaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

Integrated optoelectronicsScaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

Iron alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Iron compoundsPreparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

IsomerizationDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Iterative methodsQuantum Boolean Circuits are 1-Testable. Chou, Y.-H., +, TNANO July 2008484-492

L

Langmuir-Blodgett filmsDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Laser transitionsPeriodic Transient Inversion at Intersubband Laser Transitions in QuantumWells in an External Electric Field. Kukushkin, V., +, TNANO May 2008344-350

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 819

Leakage currentsImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Light emitting diodesThe Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

Light polarizationExcitation and Propagation of Surface Plasmons in a Metallic NanoslitStructure. Wuenschell, J., +, TNANO March 2008 229-236

Light propagationExcitation and Propagation of Surface Plasmons in a Metallic NanoslitStructure. Wuenschell, J., +, TNANO March 2008 229-236

Liquid crystalsDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Logic designRun-Time Data-Dependent Defect Tolerance for Hybrid CMOS/NanodeviceDigital Memories. Sun, F., +, TNANO March 2008 217-222

Logic gatesAn Analysis of Internal Parameter Variations Effects on Nanoscaled Gates.Martorell, F., +, TNANO Jan. 2008 24-33

Smart Universal Multiple-Valued Logic Gates by Transferring Single Elec-trons. Zhang, W.-C., +, TNANO July 2008 440-450

Low-power electronicsMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

M

Magnetic anisotropyRecording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Magnetic domainsCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Magnetic force microscopyCalibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

Characterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Magnetic hysteresisCalibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

Magnetic impuritiesRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Magnetic multilayersMagnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Magnetic polaronsNonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Magnetic recordingRecording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Magnetic semiconductorsRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Magnetic sensorsSite-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Magnetic storageCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Nonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Magnetic switchingCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Magnetic thin filmsStructural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Magnetic tunnellingCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

MagnetizationRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Magnetization reversalRecording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

MagnetoelectronicsNonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Spin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Majority logicOn the Reliability of Majority Gates Full Adders. Ibrahim, W., +, TNANOJan. 2008 56-67

Manganese alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

ManipulatorsIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Mass productionOn-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Materials preparationAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Mechanical contactA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Mechanical testingA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Melting pointEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

Memory architectureRun-Time Data-Dependent Defect Tolerance for Hybrid CMOS/NanodeviceDigital Memories. Sun, F., +, TNANO March 2008 217-222

MESFETsMESFETs Made From Individual GaN Nanowires. Blanchard, P. T., +,TNANO Nov. 2008 760-765

Mesoporous materialsDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Metallic thin filmsCavity Plasmon Resonance Biosensing. Razansky, D., +, TNANO Sept. 2008580-585

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Micro-opticsDesign and Simulation of a Nanophotonic Traceable Memory Using Local-ized Energy Dissipation and Hierarchy of Optical Near-Field Interactions.Naruse, M., +, TNANO Jan. 2008 14-19

+ Check author entry for coauthors

820 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Scaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

Microchannel flowUltra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

MicroelectrodesUltra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

MicrofluidicsAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Micromechanical devicesA Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Achieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process. Sebastian, A., +, TNANO Sept. 2008586-595

Directed Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Visually Servoed 3-D Alignment of Multiple Objects with SubnanometerPrecision. Kim, J. H., +, TNANO May 2008 321-330

MicromechanicsA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

MicroorganismsIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Adhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

MicrosensorsAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Directed Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Ultra-Low-Powered Aqueous Shear Stress Sensors Based on BulkEG-CNTs Integrated in Microfluidic Systems. Qu, Y., +, TNANO Sept.2008 565-572

MIM devicesImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

MIS structuresScaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

MixingEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

MOCVDControlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

ModelingGuest Editorial Special Issue on Nanowire Transistors: Modeling, DeviceDesign, and Technology. Kumar, M. J., +, TNANO Nov. 2008 643-650

Spice Modeling of Silicon Nanowire Field-Effect Transistors forHigh-Speed Analog Integrated Circuits. Hamedi-Hagh, S., +, TNANONov. 2008 766-775

Molecular beam epitaxial growth1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Molecular dynamics methodMechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

Molecular electronicsInformation Acquisition at the Nanoscale: Fundamental Considerations. An-derson, N. G., +, TNANO Sept. 2008 521-526

Multijunction Fault-Tolerance Architecture for Nanoscale Crossbar Memo-ries. Coker, A., +, TNANO March 2008 202-208

MonolayersDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Monolithic integrated circuitsMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Monte Carlo methodsAnomalous Negative Bias Temperature Instability Degradation Induced bySource/Drain Bias in Nanoscale PMOS Devices. Yan, B., +, TNANO July2008 418-421

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristicsfor the Radio Frequency Single-Electron Transistors. Manoharan, M., +,TNANO May 2008 266-272

SEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices.Allec, N., +, TNANO May 2008 351-354

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

MOSFETA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

Anomalous Negative Bias Temperature Instability Degradation Induced bySource/Drain Bias in Nanoscale PMOS Devices. Yan, B., +, TNANO July2008 418-421

Bandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs.Kim, R., +, TNANO Nov. 2008 787-794

Chemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanos-tructures. Chen, P.-C., +, TNANO Nov. 2008 668-682

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Fabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon. Pott, V., +, TNANO Nov. 2008 733-744

High-Performance High-�/Metal Planar Self-Aligned Gate-All-AroundCMOS Devices. Pouydebasque, A., +, TNANO Sept. 2008 551-557

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on BulkSi Wafer. Suk, S. D., +, TNANO March 2008 181-184

Impact of LER and Random Dopant Fluctuations on FinFET Matching Per-formance. Baravelli, E., +, TNANO May 2008 291-298

Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs.Chen, W. P.-N., +, TNANO Sept. 2008 538-543

Measurement of Capacitances in Multigate Transistors by CoulombBlockade Spectroscopy. Hofheinz, M., +, TNANO Jan. 2008 74-78

Modeling and Performance Comparison of 1-D and 2-D Devices IncludingParasitic Gate Capacitance and Screening Effect. Wei, L., +, TNANO Nov.2008 720-727

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Sensitivity of Multigate MOSFETs to Process Variations–-An AssessmentBased on Analytical Solutions of 3-D Poisson’s Equation. Wu, Y.-S., +,TNANO May 2008 299-304

Smart Universal Multiple-Valued Logic Gates by Transferring Single Elec-trons. Zhang, W.-C., +, TNANO July 2008 440-450

Spin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 821

Temperature Dependence of Carrier Transport of a Silicon NanowireSchottky-Barrier Field-Effect Transistor. Yang, W. F., +, TNANO Nov.2008 728-732

Motion estimationMotion Detection by Quantum-Dots-Based Velocity-Tuned Filter. Lee, W.H., +, TNANO May 2008 355-362

Visually Servoed 3-D Alignment of Multiple Objects with SubnanometerPrecision. Kim, J. H., +, TNANO May 2008 321-330

MultilayersDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Improvement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

N

NanocompositesEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

NanocontactsMechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

NanoelectronicsAn Analysis of Internal Parameter Variations Effects on Nanoscaled Gates.Martorell, F., +, TNANO Jan. 2008 24-33

Information Acquisition at the Nanoscale: Fundamental Considerations. An-derson, N. G., +, TNANO Sept. 2008 521-526

Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs.Chen, W. P.-N., +, TNANO Sept. 2008 538-543

Measurement of Capacitances in Multigate Transistors by CoulombBlockade Spectroscopy. Hofheinz, M., +, TNANO Jan. 2008 74-78

Monolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Multijunction Fault-Tolerance Architecture for Nanoscale Crossbar Memo-ries. Coker, A., +, TNANO March 2008 202-208

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Run-Time Data-Dependent Defect Tolerance for Hybrid CMOS/NanodeviceDigital Memories. Sun, F., +, TNANO March 2008 217-222

NanolithographyDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Room Temperature Nanoimprint Lithography Using Molds Fabricated byMolecular Beam Epitaxy. Harrer, S., +, TNANO May 2008 363-370

NanoparticlesAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Development of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

Limitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

Preparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

NanopatterningDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Room Temperature Nanoimprint Lithography Using Molds Fabricated byMolecular Beam Epitaxy. Harrer, S., +, TNANO May 2008 363-370

Nanoporous materialsVertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on SiSubstrates. Yang, D.-J., +, TNANO March 2008 131-134

NanopositioningMinimizing Scanning Errors in Piezoelectric Stack-Actuated Nanoposi-tioning Platforms. Aphale, S. S., +, TNANO Jan. 2008 79-90

NanorodsNanorods of LiF:Mg,Cu,P as Detectors for Mixed Field Radiations. Salah,N., +, TNANO Nov. 2008 749-753

Nanostructured materialsA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

A New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

A Single Palladium Nanowire Via Electrophoresis Deposition Used as a Ul-trasensitive Hydrogen Sensor. Hu, Y., +, TNANO Nov. 2008 693-699

Band Effects on the Transport Characteristics of Ultrascaled SNW-FETs.Gnani, E., +, TNANO Nov. 2008 700-709

Bandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs.Kim, R., +, TNANO Nov. 2008 787-794

Chemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanos-tructures. Chen, P.-C., +, TNANO Nov. 2008 668-682

Design Consideration of Bulk FinFETs Devices With � /� /� Gate and� /� Gate for Sub-50-nm DRAM Cell Transistors. Park, K., +, TNANOJuly 2008 427-433

Directed Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Displacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate. Theng,A. L., +, TNANO Nov. 2008 795-799

Electrical Characteristics of the Backgated Bottom-Up Silicon NanowireFETs. Kim, D., +, TNANO Nov. 2008 683-687

Electrical Failure Analysis of Au Nanowires. Huang, Q., +, TNANO Nov.2008 688-692

Enhanced Electrical Conductance of ZnO Nanowire FET by NondestructiveSurface Cleaning. Verma, V. P., +, TNANO Nov. 2008 782-786

Fabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon. Pott, V., +, TNANO Nov. 2008 733-744

Finite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Fluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Guest Editorial Special Issue on Nanowire Transistors: Modeling, DeviceDesign, and Technology. Kumar, M. J., +, TNANO Nov. 2008 643-650

Highly Sensitive ZnO Nanowire Acetone Vapor Sensor With Au Adsorption.Chang, S.-J., +, TNANO Nov. 2008 754-759

Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs.Yoo, S. K., +, TNANO Nov. 2008 745-748

MESFETs Made From Individual GaN Nanowires. Blanchard, P. T., +,TNANO Nov. 2008 760-765

Modeling and Performance Comparison of 1-D and 2-D Devices IncludingParasitic Gate Capacitance and Screening Effect. Wei, L., +, TNANO Nov.2008 720-727

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Nanorods of LiF:Mg,Cu,P as Detectors for Mixed Field Radiations. Salah,N., +, TNANO Nov. 2008 749-753

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Oxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Palladium Nanowires Assembly by Dielectrophoresis Investigated as Hy-drogen Sensors. La Ferrara, V., +, TNANO Nov. 2008 776-781

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

+ Check author entry for coauthors

822 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Profile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs. Curreli, M., +, TNANO Nov. 2008 651-667

Spice Modeling of Silicon Nanowire Field-Effect Transistors forHigh-Speed Analog Integrated Circuits. Hamedi-Hagh, S., +, TNANONov. 2008 766-775

Structural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Temperature Dependence of Carrier Transport of a Silicon NanowireSchottky-Barrier Field-Effect Transistor. Yang, W. F., +, TNANO Nov.2008 728-732

NanotechnologyIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

A TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

A Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

A Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Achieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process. Sebastian, A., +, TNANO Sept. 2008586-595

Advances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Anomalous Negative Bias Temperature Instability Degradation Induced bySource/Drain Bias in Nanoscale PMOS Devices. Yan, B., +, TNANO July2008 418-421

Automatic Drift Compensation Using Phase Correlation Method forNanomanipulation. Yang , Q., +, TNANO March 2008 209-216

Design and Simulation of a Nanophotonic Traceable Memory Using Local-ized Energy Dissipation and Hierarchy of Optical Near-Field Interactions.Naruse, M., +, TNANO Jan. 2008 14-19

Design Consideration of Bulk FinFETs Devices With � /� /� Gate and� /� Gate for Sub-50-nm DRAM Cell Transistors. Park, K., +, TNANOJuly 2008 427-433

Development of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

Editorial [Special section intro.]. Requicha, A., +, TNANO March 2008105-106

Engineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

Fabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon. Pott, V., +, TNANO Nov. 2008 733-744

Faraday’s Induction Experiment in Nano-Transformers. Kim, H. K., +,TNANO March 2008 120-123

Fluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Oxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

Preparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

Profile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

Scaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

NanotubesModeling and Performance Comparison of 1-D and 2-D Devices IncludingParasitic Gate Capacitance and Screening Effect. Wei, L., +, TNANO Nov.2008 720-727

A Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Enhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Limits to the Signal Delay in Ballistic, Nanoscale Transistors: Semiclassicaland Quantum Results. John, D. L., +, TNANO Jan. 2008 48-55

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Performance Prediction of Carbon Nanotube Bundle Dipole Antennas.Huang, Y., +, TNANO May 2008 331-337

A Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

Vertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on SiSubstrates. Yang, D.-J., +, TNANO March 2008 131-134

NanowiresA Nanodamascene Process for Advanced Single-Electron Transistor Fabri-cation. Dubuc, C., +, TNANO Jan. 2008 68-73

Chalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Mechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Near-field scanning optical microscopyDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

NeedlesIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Neural networksSelf-Assembled Nanowire Arrays of Metal–Insulator–SemiconductorDiodes Exhibiting S-Type Nonlinearity. Varfolomeev, A., +, TNANO Nov.2008 800-805

NickelMechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrica-tion. Rheem, Y., +, TNANO May 2008 251-255

Nickel alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Notch filtersTunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

O

Ohmic contactsEnhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

Optical arraysLarge-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Optical filmsLarge-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 823

Optical filtersTunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

Optical scannersDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

Optical storageDesign and Simulation of a Nanophotonic Traceable Memory Using Local-ized Energy Dissipation and Hierarchy of Optical Near-Field Interactions.Naruse, M., +, TNANO Jan. 2008 14-19

Optical waveguidesExcitation and Propagation of Surface Plasmons in a Metallic NanoslitStructure. Wuenschell, J., +, TNANO March 2008 229-236

On the Design of Dielectric Strip Plasmonic Structures for SubwavelengthWaveguiding Applications. Nieuwoudt, A., +, TNANO March 2008 189-196

Tunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

Two-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

OptimizationCavity Plasmon Resonance Biosensing. Razansky, D., +, TNANO Sept. 2008580-585

On the Design of Dielectric Strip Plasmonic Structures for SubwavelengthWaveguiding Applications. Nieuwoudt, A., +, TNANO March 2008 189-196

Organic compoundsDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Organic-inorganic hybrid materialsEffect of Polyaniline Functionalized Carbon Nanotubes Addition on thePositive Temperature Coefficient Behavior of Carbon Black/High-DensityPolyethylene Nanocomposites. Kalappa, P., +, TNANO March 2008223-228

OxidationOxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

P

PalladiumAssembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Effect of Process Variation on Field Emission Characteristics in Surface-Conduction Electron Emitters. Lo, H.-Y., +, TNANO July 2008 434-439

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

Particle sizeAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

PassivationProfile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

PermittivityHigh-Performance High-�/Metal Planar Self-Aligned Gate-All-AroundCMOS Devices. Pouydebasque, A., +, TNANO Sept. 2008 551-557

Improvement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

PhononsSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

PhosphorsThe Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

PhotochemistryDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

PhotochromismDisplacement Current of Nanodendrimer. Choi, Y.-S., +, TNANO March2008 107-110

Photoconductive cellsDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

PhotodetectorsDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

PhotoluminescenceFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Photonic band gapTunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

Photonic crystalsEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers. Ide, K., +, TNANO March 2008 185-188

Photonic Crystal Drop Filter Exploiting Resonant Cavity Configuration.D’Orazio, A., +, TNANO Jan. 2008 10-13

Photorefractive effectDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Photorefractive materialsDynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Piezoelectric actuatorsMinimizing Scanning Errors in Piezoelectric Stack-Actuated Nanoposi-tioning Platforms. Aphale, S. S., +, TNANO Jan. 2008 79-90

Plasma materials processingEffect of Process Variation on Field Emission Characteristics in Surface-Conduction Electron Emitters. Lo, H.-Y., +, TNANO July 2008 434-439

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

PlasmonicsOn the Design of Dielectric Strip Plasmonic Structures for SubwavelengthWaveguiding Applications. Nieuwoudt, A., +, TNANO March 2008 189-196

PlasmonsGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

PlatinumImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Magnetic Ordering of Focused-Ion-Beam Structured Cobalt-Platinum Dotsfor Field-Coupled Computing. Becherer, M., +, TNANO May 2008 316-320

Platinum alloysCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Point defectsPhotonic Crystal Drop Filter Exploiting Resonant Cavity Configuration.D’Orazio, A., +, TNANO Jan. 2008 10-13

Poisson equationSensitivity of Multigate MOSFETs to Process Variations–-An AssessmentBased on Analytical Solutions of 3-D Poisson’s Equation. Wu, Y.-S., +,TNANO May 2008 299-304

Pole assignmentMinimizing Scanning Errors in Piezoelectric Stack-Actuated Nanoposi-tioning Platforms. Aphale, S. S., +, TNANO Jan. 2008 79-90

Polymer electrolytesFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

PolymersAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Room Temperature Nanoimprint Lithography Using Molds Fabricated byMolecular Beam Epitaxy. Harrer, S., +, TNANO May 2008 363-370

+ Check author entry for coauthors

824 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Two-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

Population inversionPeriodic Transient Inversion at Intersubband Laser Transitions in QuantumWells in an External Electric Field. Kukushkin, V., +, TNANO May 2008344-350

Porous materialsA Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

PowdersRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Precipitation (physical chemistry)Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

ProbesCalibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

Programmable logic arraysPLAs in Quantum-Dot Cellular Automata. Crocker, M., +, TNANO May2008 376-386

Proximity effect (lithography)Recording Physics, Design Considerations, and Fabrication of NanoscaleBit-Patterned Media. Litvinov , D., +, TNANO July 2008 463-476

PyrolysisNonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Preparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

Q

Quantum capacitanceBandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

Quantum computingStudy of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

Quantum dot lasers1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers. Ide, K., +, TNANO March 2008 185-188

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

Quantum dotsMotion Detection by Quantum-Dots-Based Velocity-Tuned Filter. Lee, W.H., +, TNANO May 2008 355-362

PLAs in Quantum-Dot Cellular Automata. Crocker, M., +, TNANO May2008 376-386

Quantum gatesQuantum Boolean Circuits are 1-Testable. Chou, Y.-H., +, TNANO July 2008484-492

Quantum interference phenomenaEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Quantum opticsEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Quantum transportBand Effects on the Transport Characteristics of Ultrascaled SNW-FETs.Gnani, E., +, TNANO Nov. 2008 700-709

Quantum well devicesComments on “Electron and Hole Current Characteristics of n-i-p-TypeSemiconductor Quantum Dot Transistor”. Nadarajah, S., +, TNANO Jan.2008 100-101

Quantum well lasersPeriodic Transient Inversion at Intersubband Laser Transitions in QuantumWells in an External Electric Field. Kukushkin, V., +, TNANO May 2008344-350

R

Radiation pressureLaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers. Ide, K., +, TNANO March 2008 185-188

Radiofrequency integrated circuitsMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Raman spectraRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Random-access storageChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Characterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Refractive indexTwo-Layer Nanocoatings in Long-Period Fiber Gratings for Improved Sen-sitivity of Humidity Sensors. Corres, J. M., +, TNANO July 2008 394-400

Resonant tunnellingPeriodic Transient Inversion at Intersubband Laser Transitions in QuantumWells in an External Electric Field. Kukushkin, V., +, TNANO May 2008344-350

Resonant tunnelling diodesMotion Detection by Quantum-Dots-Based Velocity-Tuned Filter. Lee, W.H., +, TNANO May 2008 355-362

RollingControlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

RutheniumCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

S

Scanning electron microscopyIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Scanning tunnelling microscopyMechanical, Electrical, and Magnetic Properties of Ni Nanocontacts. Calvo,M. R., +, TNANO March 2008 165-168

Schottky barriersEnhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Schottky diodesHydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs.Yoo, S. K., +, TNANO Nov. 2008 745-748

MESFETs Made From Individual GaN Nanowires. Blanchard, P. T., +,TNANO Nov. 2008 760-765

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

+ Check author entry for coauthors

IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 825

Temperature Dependence of Carrier Transport of a Silicon NanowireSchottky-Barrier Field-Effect Transistor. Yang, W. F., +, TNANO Nov.2008 728-732

Screening effectModeling and Performance Comparison of 1-D and 2-D Devices IncludingParasitic Gate Capacitance and Screening Effect. Wei, L., +, TNANO Nov.2008 720-727

Security of dataDesign and Simulation of a Nanophotonic Traceable Memory Using Local-ized Energy Dissipation and Hierarchy of Optical Near-Field Interactions.Naruse, M., +, TNANO Jan. 2008 14-19

Selenium compoundsChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Self assemblySelf-Assembled Nanowire Arrays of Metal–Insulator–SemiconductorDiodes Exhibiting S-Type Nonlinearity. Varfolomeev, A., +, TNANO Nov.2008 800-805

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Vertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on SiSubstrates. Yang, D.-J., +, TNANO March 2008 131-134

Semiconductor device breakdownOn-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

Semiconductor device measurementInvestigation of Coulomb Mobility in Nanoscale Strained PMOSFETs.Chen, W. P.-N., +, TNANO Sept. 2008 538-543

Semiconductor device modelingCharacteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs.Kim, R., +, TNANO Nov. 2008 787-794

Semiconductor device modelsComparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristicsfor the Radio Frequency Single-Electron Transistors. Manoharan, M., +,TNANO May 2008 266-272

Strong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Semiconductor device noiseAn Analysis of Internal Parameter Variations Effects on Nanoscaled Gates.Martorell, F., +, TNANO Jan. 2008 24-33

Semiconductor diodesStrong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Semiconductor dopingImpact of LER and Random Dopant Fluctuations on FinFET Matching Per-formance. Baravelli, E., +, TNANO May 2008 291-298

Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs.Chen, W. P.-N., +, TNANO Sept. 2008 538-543

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Semiconductor growthControlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

Semiconductor heterojunctionsSiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Semiconductor materialsOxidation of Graphene Nanoribbon by Molecular Oxygen. Yu, S. S., +,TNANO Sept. 2008 628-635

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Semiconductor nanotubesControlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

Semiconductor plasmaEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Semiconductor quantum dots1.55 �m InAs/InAlGaAs Quantum Dot DFB Lasers. Kim, J. S., +, TNANOMarch 2008 128-130

Comments on “Electron and Hole Current Characteristics of n-i-p-TypeSemiconductor Quantum Dot Transistor”. Nadarajah, S., +, TNANO Jan.2008 100-101

Fluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Nonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Optical Characteristics and the Linewidth Enhancement Factor Measuredfrom InAs/GaAs Quantum Dot Laser Diodes. Kim, K. C., +, TNANO March2008 135-139

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

SiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

Study of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

Semiconductor quantum wellsStrong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

Semiconductor quantum wiresSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Semiconductor storageChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

Nonvolatile Memory via Spin Polaron Formation. Enaya, H., +, TNANO July2008 480-483

Semiconductor switchesStrong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Semiconductor thin filmsDevelopment of Ultrafine Indium Tin Oxide (ITO) Nanoparticle for Ink-JetPrinting by Low-Temperature Synthetic Method. Hong, S.-J., +, TNANOMarch 2008 172-176

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

SensorsChemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanos-tructures. Chen, P.-C., +, TNANO Nov. 2008 668-682

Highly Sensitive ZnO Nanowire Acetone Vapor Sensor With Au Adsorption.Chang, S.-J., +, TNANO Nov. 2008 754-759

Palladium Nanowires Assembly by Dielectrophoresis Investigated as Hy-drogen Sensors. La Ferrara, V., +, TNANO Nov. 2008 776-781

ServomechanismsAchieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process. Sebastian, A., +, TNANO Sept. 2008586-595

Shear modulusDetermining Mechanical Properties of Carbon Microcoils Using LateralForce Microscopy. Chang, N.-K., +, TNANO March 2008 197-201

SiliconIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

+ Check author entry for coauthors

826 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

A TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

Adhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Band Effects on the Transport Characteristics of Ultrascaled SNW-FETs.Gnani, E., +, TNANO Nov. 2008 700-709

Comparative Study on Drive Current of III–V Semiconductor, Ge and SiChannel n- MOSFETs based on Quantum-Corrected Monte Carlo Simula-tion. Mori, T., +, TNANO March 2008 237-241

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate. Theng,A. L., +, TNANO Nov. 2008 795-799

Electrical Characteristics of the Backgated Bottom-Up Silicon NanowireFETs. Kim, D., +, TNANO Nov. 2008 683-687

Finite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on BulkSi Wafer. Suk, S. D., +, TNANO March 2008 181-184

Hydrogen Ion Sensing Using Schottky Contacted Silicon Nanowire FETs.Yoo, S. K., +, TNANO Nov. 2008 745-748

Monolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Profile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

Study of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

Silicon alloysStructural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Silicon compoundsTunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

Silicon on insulator technologyDual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate. Theng,A. L., +, TNANO Nov. 2008 795-799

Silicon substratesPalladium Nanowires Assembly by Dielectrophoresis Investigated as Hy-drogen Sensors. La Ferrara, V., +, TNANO Nov. 2008 776-781

Silicon-on-insulatorFabrication and Characterization of Sidewall Defined Silicon-on-InsulatorSingle-Electron Transistor. Jung, Y. C., +, TNANO Sept. 2008 544-550

Scaling and Optimization of MOS Optical Modulators in Nanometer SOIWaveguides. Passaro, V. M. N., +, TNANO July 2008 401-408

Study of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

SilverLarge-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Nonvolatile Memory Characteristics of NMOSFET With Ag NanocrystalsSynthesized via a Thermal Decomposition Process for Uniform Device Dis-tribution. Ryu, S.-W., +, TNANO March 2008 145-150

Single electron devicesSEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices.Allec, N., +, TNANO May 2008 351-354

Single electron transistorsA Nanodamascene Process for Advanced Single-Electron Transistor Fabri-cation. Dubuc, C., +, TNANO Jan. 2008 68-73

Fabrication and Characterization of Sidewall Defined Silicon-on-InsulatorSingle-Electron Transistor. Jung, Y. C., +, TNANO Sept. 2008 544-550

Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristicsfor the Radio Frequency Single-Electron Transistors. Manoharan, M., +,TNANO May 2008 266-272

Single-Electron Devices With Input Discretizer. Mizugaki, Y., +, TNANOSept. 2008 601-606

Smart Universal Multiple-Valued Logic Gates by Transferring Single Elec-trons. Zhang, W.-C., +, TNANO July 2008 440-450

Study of Single-Charge Polarization on a Pair of Charge Qubits IntegratedOnto a Silicon Double Single-Electron Transistor Readout. Kawata, Y., +,TNANO Sept. 2008 617-623

Smectic liquid crystalsTunability of Photonic Band Gap Notch Filters. Calo, G., +, TNANO May2008 273-284

Soft lithographyDirected Fabrication of Ceramic Nanostructures on Fragile Substrates UsingSoft-electron Beam Lithography (soft-eBL). Donthu, S., +, TNANO May2008 338-343

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Soft magnetic materialsStructural and Magnetic Properties of Amorphous and NanocrystallineCoFeSiB Thin Films. Yoon, J., +, TNANO July 2008 409-411

Solid gasPalladium Nanowires Assembly by Dielectrophoresis Investigated as Hy-drogen Sensors. La Ferrara, V., +, TNANO Nov. 2008 776-781

Solid-state rectifiersStrong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

Special issues and sectionsEditorial [Special section intro.]. Requicha, A., +, TNANO March 2008105-106

Guest Editorial Special Issue on Nanowire Transistors: Modeling, DeviceDesign, and Technology. Kumar, M. J., +, TNANO Nov. 2008 643-650

Spectral line shiftSelective Intermixing of InAs/InGaAs/InP Quantum Dot Structure WithLarge Energy Band Gap Tuning. Xiaohong, T., +, TNANO July 2008422-426

SPICESmart Universal Multiple-Valued Logic Gates by Transferring Single Elec-trons. Zhang, W.-C., +, TNANO July 2008 440-450

Spin polarized transportSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Spin-orbit interactionsSpin Injection Efficiency at the Source/Channel Interface of Spin Transis-tors. Wan, J., +, TNANO Jan. 2008 34-39

Spin-spin relaxationPreparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

Spontaneous emissionEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Sputter etchingProfile Control in Silicon Nanostructures Using Fluorine-Enhanced OxidePassivation. Zhao, Y., +, TNANO Jan. 2008 40-47

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

SteelA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Stimulated emissionGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

Storage mediaAchieving Subnanometer Precision in a MEMS-Based Storage DeviceDuring Self-Servo Write Process. Sebastian, A., +, TNANO Sept. 2008586-595

Calibration of Coercive and Stray Fields of Commercial Magnetic ForceMicroscope Probes. Jaafar, M., +, TNANO May 2008 245-250

StrainFabrication and Characterization of Gate-All-Around Silicon Nanowires onBulk Silicon. Pott, V., +, TNANO Nov. 2008 733-744

Strontium compoundsImprovement of Electrical Properties of Ba Sr TiO Capacitors Withan Inserted Nano-Cr Interlayer. Ho, C.-C., +, TNANO July 2008 412-417

Submillimeter wave generationGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

Submillimeter wave oscillatorsGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

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IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008 827

SuperparamagnetismPreparation of Water-Dispersible and Biocompatible Iron Oxide Nanoparti-cles for MRI Agent. Lee, Y. T., +, TNANO March 2008 111-114

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Surface morphologySurface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Surface plasmon resonanceCavity Plasmon Resonance Biosensing. Razansky, D., +, TNANO Sept. 2008580-585

Surface plasmonsEffects of Electronic Quantum Interference, Photonic-Crystal Cavity, Spon-taneous Emission, Longitudinal Field, Surface-Plasmon Modes, and Sur-face–Plasmon–Polariton for Optical Amplification. Huang, D., +, TNANOMarch 2008 151-164

Excitation and Propagation of Surface Plasmons in a Metallic NanoslitStructure. Wuenschell, J., +, TNANO March 2008 229-236

Large-Area Subwavelength Aperture Arrays Fabricated Using NanoimprintLithography. Skinner, J. L., +, TNANO Sept. 2008 527-531

Surface roughnessFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

Surface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Surface textureAdhesion Study of Escherichia coli Cells on Nano-/Microtextured Surfacesin a Microfluidic System. Wang, H., +, TNANO Sept. 2008 573-579

Surface treatmentEnhanced Electrical Conductance of ZnO Nanowire FET by NondestructiveSurface Cleaning. Verma, V. P., +, TNANO Nov. 2008 782-786

SurfactantsAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

SuspensionsLimitations of Au Particle Nanoassembly Using DielectrophoreticForce—A Parametric Experimental and Theoretical Study. Li, M., +,TNANO July 2008 477-479

System-on-chipOn-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrica-tion of Carbon-Nanotube-Based Electronic Devices. Buh, G.-H., +, TNANOSept. 2008 624-627

T

TantalumCharacterization of Domain Switching Behavior of MTJ Cells UsingMagnetic Force Microscopy (MFM) and R–H Loop Analysis. Heo, J., +,TNANO March 2008 169-171

Technology CAD (electronics)Impact of LER and Random Dopant Fluctuations on FinFET Matching Per-formance. Baravelli, E., +, TNANO May 2008 291-298

Tellurium compoundsChalcogenide-Nanowire-Based Phase Change Memory. Yu, B., +, TNANOJuly 2008 496-502

TemperatureTemperature Dependence of Carrier Transport of a Silicon NanowireSchottky-Barrier Field-Effect Transistor. Yang, W. F., +, TNANO Nov.2008 728-732

TextilesFluorescent Silkworm Silk Prepared via Incorporation of Green, Yellow,Red, and Near-Infrared Fluorescent Quantum Dots. Chu, M., +, TNANOMay 2008 308-315

ThyristorsSelf-Assembled Nanowire Arrays of Metal–Insulator–SemiconductorDiodes Exhibiting S-Type Nonlinearity. Varfolomeev, A., +, TNANO Nov.2008 800-805

Tight-binding calculationsInformation Acquisition at the Nanoscale: Fundamental Considerations. An-derson, N. G., +, TNANO Sept. 2008 521-526

TitaniumIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Assembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Titanium compoundsA TiSi �Si Heteronanocrystal Memory Operated With Hot Carrier Injec-tions. Zhu, Y., +, TNANO May 2008 305-307

A Model for the Self Structuring of Nanotubes in Titanium Oxide. Quintero-Torres, R., +, TNANO May 2008 371-375

Dynamic Formation of Diffraction Grating in a Photorefractive LiquidCrystal Cell With Mesoporous TiO Layers. Jang, K.-S., +, TNANO March2008 115-119

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Vertically Oriented Titania Nanotubes Prepared by Anodic Oxidation on SiSubstrates. Yang, D.-J., +, TNANO March 2008 131-134

TransformersFaraday’s Induction Experiment in Nano-Transformers. Kim, H. K., +,TNANO March 2008 120-123

TransistorsBandstructure Effects in Silicon Nanowire Hole Transport. Neophytou, N.,+, TNANO Nov. 2008 710-719

Guest Editorial Special Issue on Nanowire Transistors: Modeling, DeviceDesign, and Technology. Kumar, M. J., +, TNANO Nov. 2008 643-650

Transmission electron microscopyAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Assembly and Electrical Characterization of Multiwall Carbon NanotubeInterconnects. Close, G. F., +, TNANO Sept. 2008 596-600

Engineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

Transmission linesGraphene Terahertz Plasmon Oscillators. Rana, F., +, TNANO Jan. 200891-99

TungstenIn Situ Single Cell Mechanics Characterization of Yeast Cells UsingNanoneedles Inside Environmental SEM. Ahmad, M. R., +, TNANO Sept.2008 607-616

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

TunnellingSEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices.Allec, N., +, TNANO May 2008 351-354

Two-dimensional electron gasStrong Spatial Dependence of Electron Velocity, Density, and IntervalleyScattering in an Asymmetric Nanodevice in the Nonlinear TransportRegime. Xu, K. Y., +, TNANO July 2008 451-457

U

Ultrasonic applicationsAdvances in Nanoalumina Ceramic Particle Fabrication Using Sonofrag-mentation. Gopi, K. R., +, TNANO Sept. 2008 532-537

Ultraviolet radiationEnhanced Electrical Conductance of ZnO Nanowire FET by NondestructiveSurface Cleaning. Verma, V. P., +, TNANO Nov. 2008 782-786

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Valence bandsFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Raman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

Van der Waals forcesA Nanogripper Employing Aligned Multiwall Carbon Nanotubes. Jang, J.E., +, TNANO July 2008 389-393

Engineering Multiwalled Carbon Nanotubes Inside a Transmission ElectronMicroscope Using Nanorobotic Manipulation. Dong, L., +, TNANO July2008 508-517

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828 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 7, NO. 6, NOVEMBER 2008

Vapor phase epitaxial growthControlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nan-otubes. Chun, I. S., +, TNANO July 2008 493-495

MOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

ViscosityA New Model Developed to Evaluate the Contact Area Arising DuringNano-indentation Tests With Pileup Behavior of Metal Materials. Han,C.-F., +, TNANO May 2008 256-265

Visual servoingVisually Servoed 3-D Alignment of Multiple Objects with SubnanometerPrecision. Kim, J. H., +, TNANO May 2008 321-330

VLSIMonolithic Integration of CMOS VLSI and Carbon Nanotubes for HybridNanotechnology Applications. Akinwande, D., +, TNANO Sept. 2008636-639

Voltage measurementFaraday’s Induction Experiment in Nano-Transformers. Kim, H. K., +,TNANO March 2008 120-123

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Waveguide filtersPhotonic Crystal Drop Filter Exploiting Resonant Cavity Configuration.D’Orazio, A., +, TNANO Jan. 2008 10-13

Wide band gap semiconductorsMOVPE-Grown Ultrasmall Self-Organized InGaN Nanotips. Ji, L. W., +,TNANO Jan. 2008 1-4

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

Work functionEnhanced Subthreshold Slopes in Large Diameter Single Wall Carbon Nan-otube Field Effect Transistors. Pisana, S., +, TNANO July 2008 458-462

Interface Study of Metal Electrode and Semiconducting Carbon Nanotubes:Effects of Electrode Atomic Species. Tarakeshwar, P., +, TNANO March2008 124-127

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X-ray chemical analysisSiGe/Si Quantum-Dot Infrared Photodetectors With � Doping. Lin, C.-H.,+, TNANO Sept. 2008 558-564

X-ray diffractionRaman Studies of �� �� � Nanoparticles. Minh, N. V., +, TNANOMarch 2008 177-180

X-ray photoelectron spectraSurface Roughness in Plasma-Etched As S Films: Its Origin and Improve-ment. Choi, D.-Y., +, TNANO May 2008 285-290

Z

Zinc compoundsFinite-Size Effect on Band Structure and Photoluminescence of Semicon-ductor Nanocrystals. Lang, X. Y., +, TNANO Jan. 2008 5-9

Photoresponse of ZnO Tetrapod Nanocrystal Schottky Diodes. Newton, M.C., +, TNANO Jan. 2008 20-23

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-EmittingDiodes for Color Conversion. Chen, Y.-C., +, TNANO July 2008 503-507

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