Advance Program

19th International Conference on Metalorganic Vapor Phase Epitaxy

(ICMOVPE-XIX)

June 3 – 8, 2018

Nara Kasugano International Forum, Nara, Japan

Sponsored by

The Japanese Association for Crystal Growth

Co−sponsored by The Japan Society of Applied Physics

Supported by The 125th Committee on Conversion between Light and Electricity, The 131st Committee on Thin Films, The 154th Committee on Semiconductor Interfaces and Their Applications, The 161st Committee on Science and Technology of Crystal Growth, and The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science

http://www.icmovpe.jp

Sponsoring Companies (Tentative) Welcome Reception

Coffee Break

Silver Sponsor

Exhibition

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Plenary Speakers

Hiroshi Amano (Nagoya Univ., Japan) “MOVPE as a tool for realizing sustainable smart society”

Russell Dupuis (Georgia Tech., USA) “Growth and Characterization of III-N Ultraviolet Vertical-Cavity Surface Emitting Lasers and Avalanche Photodiodes by MOCVD”

Bernardette Kunert (IMEC, Belgium) “Selective area growth of III-V on (001) Si: challenges and opportunities for device integration”

Takashi Matsuoka (Tohoku Univ., Japan) “Growth of Indium-Including Nitride Semiconductors”

Umesh K. Mishra (UCSB, USA) “N-Polar GaN: Re-Energizing GaN”

Lars Samuelson (Lund Univ., Sweden) “MOVPE Growth and Applications of III-V and III-Nitride Nanowires”

Thomas Zettler (LayTec, Germany) “Metrology for MOCVD processes – latest progress for enabling high-yield VCSEL manufacturing”

Invited Speakers

Andrew Allerman (Sandia National Labs, USA) “Material Challenges of Al-rich AlGaN Alloys for Next Generation Power Electronics”

Subramaniam Arulkumaran (Nanyang Tech. Univ., Singapore) “GaN Electronics on Large Diameter Substrate”

Ramon Collazo (NCSU, USA) “Point defect control during AlGaN growth by MOVPE”

Martin Dauelsberg (AIXTRON, Germany) “Advances in Production MOCVD Technology for Compound Semiconductor Thin Film Structures”

Mitsuru Ekawa (Sumitomo Electric, Japan) “InP-Based Monolithic Integration Technologies for Photonic Devices in Digital Coherent Transmission”

Shizuo Fujita (Kyoto Univ., Japan) “Evolution of Growth Technologies for Gallium Oxide Power Devices”

Luca Gagliano (Eindhoven Univ. of Tech., Netherlands) “Efficient green emission from wurtzite AlxIn1-xP nanowires”

Hideki Hirayama (RIKEN, Japan) “Recent Progress of AlGaN UVC LEDs”

Motoaki Iwaya (Meijo Univ., Japan) “Observation of crystal growth of group III nitride semiconductors by using in

situ X-ray diffraction attached metalorganic vapor phase epitaxial equipment”

Hongxing Jiang (Texas Tech Univ., USA) “MOCVD Growth and Properties of Hexagonal Boron Nitride Epilayers”

Yoshihiro Kangawa (Kyushu Univ., Japan) “Surface reconstruction and impurity incorporation in GaN MOVPE: Ab initio-based modeling”

Takashi Kondo (Fuji Xerox, Japan) “Improvement of Dynamic Characteristics of 850 nm VCSELs for use in Optical Communications”

Akito Kuramata (Tamura Corp., Japan) “MOCVD growth and LED applications of GaN-based materials on Ga2O3 single crystal substrates”

Naohiro Kuze (Asahi Kasei, Japan) “265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN Substrates for Disinfection Applications”

David Lackner (Fraunhofer ISE, Germany) “III-V Solar Cells - Todays Challenges and Tomorrows Opportunities”

KeiMay Lau (Kong Univ. of Sci. & Tech., Hong Kong) “III-V Photonic and Electronic Devices Grown on Silicon by MOCVD”

Soo Min Lee (Veeco, USA) “Recent Progress in MOCVD Technology for Compound Semiconductor Materials”

Mike Leszczynski (Unipress, Poland) “MOVPE growth of AlGaInN structures in violet/blue/green laser diode technology”

Koh Matsumoto (Taiyo Nippon Sanso, Japan) “Design evolution of MOVPE reactors for improved productivity: adaptation to nitrides and feedback to classical III-V”

Shinichi Nagahama (Nichia, Japan) “GaN-based Visible Laser Diodes”

Ryo Nakao (NTT, Japan) “Overcoming lattice and polarity mismatches in MOVPE growth of (In)GaAs on Si(100) substrate”

Satoshi Nakazawa (Panasonic, Japan) “GaN-based Metal-Insulator-Semiconductor Transistors on Si for Power Switching Applications”

Rachel Oliver (Univ. of Cambridge, UK) “Single photon sources based on non-polar InGaN quantum dots”

Yohei Otoki (SCIOCS, Japan) “Real potential and homework of GaN electric devices by using MOVPE grown GaN epi-layers on GaN substrates”

Joan Redwing (Penn State Univ., USA) “Epitaxial growth of 2D layered chalcogenide monolayers and

heterostructures”

Ferdinand Scholz (Univ. of Ulm, Germany) “Investigation of epitaxially grown AlB(Ga)N layers on AlN templates”

Kenji Shiraishi (Nagoya Univ., Japan) “Multi-Physics Simulations of GaN MOVPE Growth”

Qian Sun (Suzhou Institute of Nano-Tech & Nano-Bionics, China) “Heteroepitaxy of GaN-based light emitting devices on Si”

Tetsuya Takeuchi (Meijo Univ., Japan) “GaN-based vertical-cavity surface-emitting lasers with MOVPE-grown AlInN/GaN DBRs”

Roman Talalaev (STR, Russia) “MOVPE process modeling for improvement of production yield and device performance”

Kerstin Volz (Univ. of Marburg, Germany) “III/V´s on Silicon: atomic structure, local electric fields and charge densities”

Christine Wang (MIT Lincoln Lab., USA) “Early Development of MOVPE Reactors”

Naiyin Wang (The Australian National Univ., Australia) “Shape engineering of InP nanostructures grown by selective area epitaxy”

Special Session

Special Session I:

GaN Power Devices ─ Future Directions from the Viewpoint of Growth

Date: 18:30-20:30, Tuesday, June 5, 2018

Location: Room 1&2

Moderator: Jun Suda (Nagoya Univ., Japan)

GaN has attracted much attention as a material for next generation power devices. In the last decade extensive development efforts were carried out on AlGaN/GaN HEMTs grown on Si substrates producing cost-effective high-efficiency power switching devices. Companies in the U.S., Europe and Japan have started into production. In addition, recently, GaN MOSFETs on GaN substrates and AlGaN/AlGaN HEMTs with higher Al composition have been studied as high-voltage/high-current devices. In this session, we will have introductory talks on these devices by invited speakers. We would like to discuss what kinds of growth technology should be developed for these devices.

Special Session II:

History and Future of MOVPE Equipment

Date: 18:30-20:30, Tuesday, June 5, 2018

Location: Room 3&4

Moderator: Masakazu Sugiyama (The Univ. of Tokyo, Japan)

50 years have passed since Dr. Harold M. Manasevit published the growth of III-V semiconductors by MOVPE. Intensive development of MOVPE reactors has been the basis of the invention and commercialization of III-V devices. To meet ever-increasing demand for high productivity and low cost, MOVPE reactors has been scaled up and a lot of technology has been introduced for improved reproducibility and throughput. This session aims at an overview of such development, bridging the gap between pioneers in MOVPE and younger generation for future progress. We will then discuss next directions and challenges in MOVPE equipment.

Social Activities

Welcome Reception

Date: 18:00-20:00, Sunday, June 3, 2018

Location: Japanese Garden near the Nara Kasugano International Forum

Gagaku Exhibition

Date: 17:30-18:00, Tuesday, June 5, 2018

Location: Noh Theatre Gagaku is the music of high culture with an elegant sound so refined that you may

feel transported back to the ancient imperial court. There are three forms in which gagaku is performed, which are Kangen (instrumental), Bugaku (dances and music), and Kayo (songs and chanted poetry). All the participants are welcome to attend this exhibition, free of charge.

Shikayose

Date: 8:00-8:20, Wednesday, June 6, 2018

Location: Tobihino field

Many deer gather when they

hear the sound of the horn! Date and Time: 8:00-8:20, Wednesday, June 6, 2018 Venue: Tobihino field (Take a bus from JR or Kintetsu Nara Station and get off at the Kasugataisha-omotesando bus stop.)

Conference site Tobihino field

Excursion

Date: Wednesday 12:30-18:00, June 6, 2018 We planned one special course, a half-day excursion trip to visit Hase-dera

Temple, Muro-ji Temple, magnificent temples located in the Nara-Yamato province with so long history over 1,200 years. The area called the “Center of the Nation,” a little bit far from the conference venue, is the hidden tourist attraction and the real birthplace of imperial rule and is rich in historical sites. On the way to the temples, we will stop by Japanese Sake brewery to learn the history and production process of rice-based liquors and to enjoy Sake tasting, since Nara area is also known as the birthplace of Sake. We are sure that the course is the golden opportunity never achieved by usual foreigners, so don’t miss it.

1. Hase-dera Temple (The Buddha of Compassion)

Hase is the head temple of a large branch of the Shingon sect and has 3,000 branch temples throughout Japan. The area “Hase” has been a sacred place since ancient times and was described in Japanese classical literatures such as the “Tale of Genji” and the “Myriad Leaves Collection”. Hase Temple is called “sacred temple of flowers” and is also known as the 8th temple of the Kannon pilgrimage to 33 sites in Saigoku (Western Kansai area). Pilgrims can enjoy seasonal flowers: cherry blossoms and peonies in spring, Japanese hydrangeas in summer, maples in autumn and winter peonies in winter.

Jūichimen Kanzeon Bosatsu, or the Buddha of Compassion

This gold eleven-faced Kannon Bosatsu has a compassionate face and ten faces on top of the head. It is the largest wooden Kannon statue in Japan. People have believed in the Buddha of Compassion who helps those in distress and brings tangible rewards in this life. On this special opening event held only twice a year, you can go inside and gather close to the Buddha. People have prayed for hundreds of years touching the sacred feet.

Hon-do, or Main Hall (National Treasure)

The main hall housing the Buddha of Compassion was reconstructed by the 3rd shogun Tokugawa Iemitsu. This magnificent building was designated as a national treasure in 2004 and has a platform projecting out from the cliff and provides spectacular views. http://www.nara-yamato.com/file/Hase-En.pdf

2. Murou-ji Temple (The Buddha of Enlightenment) Murō temple started accepting female worshippers a long time ago when most

temples prohibited women to enter those precincts. Mt. Kōya was famous for applying the “No Women Allowed” policy before the 20th century while Murō was affectionately called the “Women’s Kōya”. A number of believers sought the salvation

in this temple. The Murō area is located in thick forests with a beautiful river it is said that sacred dragons dwell in the forests. The main Buddha of worship is the Shaka Nyorai, or the Buddha of Enlightenment who was a founder of Buddhism and attained enlightenment. The Shaka Nyorai has attracted devotion by those praying for supplication.

Kon-do Hall (National Treasure)

The Kon-do Hall houses the Shaka Nyorai, Twelve Heavenly Generals and other statues. The Kon-do hall, built in the middle of the 9th century, is one of the oldest buildings in this temple.

Five-storied Pagoda (National Treasure)

The five-storied pagoda is popular for its elegant appearance. The 16-m-high pagoda, surrounded by beautiful plants, is the smallest of its kind in Japan.

http://www.nara-yamato.com/file/Muro-En.pdf

3. Japanese Sake Brewery Nara area is also known as the birthplace of Sake. We will visit one of the oldest

brewery with a long history of 150 years. You can learn the history and brewing process of rice-based liquors, try tasting several brands of Sake with different taste as well. Please enjoy local culture and dream about the life of the ancient Japanese peoples.

http://www.nara-toyosawa.jp/index.html

Banquet Date: Thursday 18:30-20:30, Thursday, June 7, 2018 Location: “Hiten”, 3rd floor, Banquet Area, Hotel Nikko Nara

https://www.okura-nikko.com/japan/nara/hotel-nikko-nara/

Price: JPY 5,000/ one person (Advance reservations required) Dress: Smart casual Dinner: Sitting style

Date

5B-2AlGaN-

Based UVDevices

5C-2OxideSemi-

conductors

7B-3AdvancedEquipmentand GrowthTechnology

7C-3Characteri-

zation

7C-2BN Growth

andCharac-terization

7C-1Advanced

NitrideGrowth

Closing

Excursion

P2Poster Session 2Reception Hall

Break

Break

8B-1Plenary IV

Dupuis

Award

6B-2Growth ofIII-V on Si

7B-1NitrideLasers

4B-1Fundamen-tal NitrideGrowth

4B-2III-V

Devicesand Growth

4B-32D

Materials

5B-1GaN

ElectricDevices

Opening

4A-1Plenary IAmano

Samuelson

Lunch

4C-1NitrideOpticalDevices

4C-2Patterned

Growth

Break

17:00

Gagaku ConcertNoh Theatre

18:00

P1Poster Session 1Reception Hall

4D-2Modeling of

MOVPE

4D-1Material

Improveme-nt for Nitride

ElectricDevices

WelcomeReception

16:00

5E-2GaN Power

Devices- Future

Directionsfrom the

Viewpoint ofGrowth

5E-3History andFuture ofMOVPE

Equipment

Banquet

15:00

Registration

12:00

Lunch Lunch

13:00

14:00

Light meal

5C-3PhotonicDevices

7B-2In-situ

Analysis

5C-1Growth ofInN andInGaN

11:00

5B-3Quantum

Dots

19:00

20:00

Registration Registration

9:00

10:00

Break Break

7A-1Plenary IIIMatsuoka

Zettler

6A-2III-V

Devices onGroup IV

Substrates8A-1NitrideLEDs

Registration Registration

8A-2III-V

Nanowires

Break

5A-1Plenary II

MishraKunert

6A-1AlGaN-BasedLEDs

6B-1Growth ofAlN andAlGaN

Room

8:00

8:30Registration

Shikayose

Jun. 8 (Fri)Jun. 3 (Sun) Jun. 4 (Mon) Jun. 5 (Tue) Jun. 6 (Wed) Jun. 7 (Thu)

NohTheatre

Room1&2

Room3&4

NohTheatre

Room1&2

Room3&4

NohTheatre

Room1&2

Room3&4

Room3&4

NohTheatre

Room1&2

NohTheatre

Room1&2

Room3&4

Registration

All attendees are subject to the relevant registration fees. Please register through

the conference website: https://web-register.jp/icmovpe-xix/en/login/

Category Before Apr. 20 After Apr. 21

Regular JPY 70,000 JPY 85,000

Student JPY 30,000 JPY 40,000

Banquet JPY 5,000

Excursion JPY 2,000

Conference registration fees include: Regular Participants: - Attendance of all the technical sessions. - Conference documents. - Invitation to the Welcome Reception.

Students: As for Regular Participants, except for Proceedings.

Payment Payment method will be Credit Card (VISA, Master, AMEX, JCB only) through

online. On-site registration is available, but very limited. We recommend the online payment in advance. (All payment must be in Japanese yen.)

Cancellation In the case of cancellation, it can be proceeded through the online registration

system. We will charge the following cancellation fee: Before April 19, 2018 ----- JPY 5,000 On/after April 20, 2018 ----- 100% of the registration fee / No Refund

VISA

All foreign visitors entering Japan must possess a valid passport. Participants from

countries requiring a visa to enter Japan should obtain one from the nearest Japanese embassy or consulate in good time. If documents to be issued by the conference committee are necessary for the visa application (invitation letter, etc.), please send the invitation letter request form to the committee member (Prof. Takayuki NAKANO). Before you send the invitation letter request, registration for ICMOVPE-XIX should be completed.

Prof. Takayuki NAKANO

Shizuoka University E-mail:visa@icmovpe.jp

Accommodation

Our travel agency provides several accommodations located near the Nara

Kasugano International Forum. Book the hotel through the registration page.

Hotel Room Type Price per night

1 Hotel Fujita Nara Single JPY 10,500

2 Nara Washigton

Hotel Plaza Single JPY 9,000

3 Hotel Asyl Nara Single/Twin JPY 8,500 ~

4 Comfort Hotel

Nara Single JPY 10,000

5 Hotel Nikko Nara Single/Double/Twin JPY 12,500 ~

6 Hotel Halftime Single/Twin JPY 8,100 ~

7 Nara Royal Hotel Single/Twin JPY 9,600 ~

Official Registration Desk ART TOURIST has been appointed to staff the official registration desk during the

workshop and will handle registration and hotel accommodations. ART TOURIST CO., LTD TEL: +81-75-252-2234, FAX: +81-75-252-2244 Email: icmovpe-xix-inq@web.register.co.jp

Proceedings

The Proceedings will be published as a special issue of the journal, CRYS -Journal of Crystal Growth. The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices.

Manuscript Submissions

The proceedings using virtual special issues publish all papers in the first available regular issue and simultaneously papers appear in a new section on virtual special issues. It offers a reduction of publication times for special issues.

Authors of papers accepted for poster or oral presentations are invited to submit manuscripts for consideration for publication. The length of papers in the Proceedings is limited to six printed pages for invited papers and four printed pages for regular contributed papers. Attendance at the conference is required for inclusion in the Proceedings.

Formatting instructions Please follow the formatting recommendations on the Elsevier author instructions

website. All manuscripts will be subject to the review process; submissions will be rejected if they do not describe original, unpublished work or are not of high quality. A single printed column (text only) in the Journal of Crystal Growth is approximately 480 words. Please keep the page length limit (4 pages - regular contribution, 6 pages - invited) in mind when preparing your manuscript. Manuscripts exceeding the page limit will not be included in the proceedings.

Submission instructions Please submit manuscripts using the Elsevier Editorial System located at:

https://ees.elsevier.com/crys/ and select "ICMOVPE XIX". ONLY Electronic submissions are accepted.

Important Dates March 2, 2018: Manuscript Submission Open June 2, 2018: Deadline for Manuscript Submission

Venue & Access

s Nara Kasugano International Forum 甍 IRAKA (http://www.i-ra-ka.jp/en/) was

constructed in 1987 in commemoration of the 100th anniversary of the establishment of Nara Prefecture. It is located in the center of Nara National Park, which is famous for its beauty and 1,200 tame deer. It is conveniently accessible from Kansai International Airport [KIX] (~85min).

The site was the center of Heijokyo Capital during the Nara Period (710-784), which lasted for 74 years, and seven emperors (eight reigns) resided here. There is Heijo Palace Site Museum, which exhibits the models of the buildings and plenty of artifacts such as wooden strips, coins, roof tiles and earthenware can also be seen here. The reconstructed Daigokuden, Suzakumon Gate, and Toin Teien also show their elegant structure.

http://www.kansai.gr.jp/en/selected100/area29.html

Conference Committees

Steering Committee Chair: H. Miyake (Mie Univ., Japan) Vice Chairs: M. Iwaya (Meijo Univ., Japan) K. Kawaguchi (Fujitsu Labs. Ltd., Japan) Secretaries: T. Kawaharamura (Kochi Univ. Tech., Japan) T. Tanikawa (Tohoku Univ., Japan) Members: T. Akiyama (Mie Univ., Japan) M. Deura (The Univ. of Tokyo, Japan) H. Fujioka (The Univ. of Tokyo, Japan) Y. Honda (Nagoya Univ., Japan) Y. Kangawa (Kyushu Univ., Japan) T. Kawamura (Mie Univ., Japan) J. Motohisa (Hokkaido Univ., Japan) H. Murakami (Tokyo Univ. Agr. & Tech., Japan) T. Nakano (Shizuoka Univ., Japan) N. Okada (Yamaguchi Univ., Japan) K. Tomioka (Hokkaido Univ., Japan)

Program Committee Chair: M. Sugiyama (The Univ. of Tokyo, Japan) Vice Chairs: M. Funato (Kyoto Univ., Japan) T. Miyamoto (Tokyo Tech, Japan) J. Suda (Nagoya Univ., Japan) Secretaries: J. Nishinaga (AIST, Japan) H. Sekiguchi (Toyohashi Univ. Tech., Japan) K. Uno (Wakayama Univ., Japan) Members: M. Arai (Univ. of Miyazaki, Japan) M. Arita (The Univ. of Tokyo, Japan) S. F. Chichibu (Tohoku Univ., Japan) Y. Fujita (Shimane Univ., Japan) S. Hara (Hokkaido Univ., Japan) M. Higashiwaki (NICT, Japan) H. Hirayama (Riken, Japan) Y. Iguchi (Sumitomo Elec. Ind., Ltd., Japan) M. Imura (NIMS, Japan) T. Kageyama (The Univ. of Tokyo, Japan) T. Kitatani (Oclaro Inc., Japan) Y. Kumagai (Tokyo Univ. Agr. & Tech., Japan) K. Kumakura (NTT, Japan)

N. Kuze (Asahi Kasei Corp., Japan) Y. Miyamoto (Tokyo Tech, Japan) M. Miyoshi (Nagoya Inst. Tech., Japan) T. Nakamura (Sumitomo Elec. Ind., Ltd., Japan) T. Nanjo (Mitsubishi Elec. Corp., Japan) T. Narita (Toyota Central R&D Labs., Inc., Japan) N. Nishiyama (Tokyo Tech, Japan) S. Nitta (Nagoya Univ., Japan) S. Nunoue (Toshiba Corp., Japan) Y. Otoki (SCIOCS Co., Ltd., Japan) C. Pernot (Nikkiso-Giken Co., Ltd., Japan) Y. Saito (Toyoda Gosei Co., Ltd., Japan) H. Sato (Stanley Electric Co., Ltd., Japan) Y. Shimogaki (The Univ. of Tokyo, Japan) A. Suzuki (Panasonic Corp., Japan) K. Tadatomo (Yamaguchi Univ., Japan) T. Takeuchi (Meijo Univ., Japan) J. Tatebayashi (Osaka Univ., Japan) S. Tomiya (Sony Corp., Japan) T. Tsuchiya (Ushio Inc., Japan) K. Uchida (Univ. Ele-Comm., Japan) A. Wakahara (Toyohashi Univ. Tech., Japan) Y. Yano (Taiyo Nippon Sanso Corp., Japan)

Local Arrangements Committee Chair: Y. Fujiwara (Osaka Univ., Japan) Vice Chairs: R. Katayama (Osaka Univ., Japan) Y. Matsuoka (Nara Women's Univ., Japan) Members: T. Ikenoue (Kyoto Univ., Japan) M. Imade (Osaka Univ., Japan) R. Ishii (Kyoto Univ., Japan) K. Kaneko (Kyoto Univ., Japan) M. Uemukai (Osaka Univ., Japan) J. Tatebayashi (Osaka Univ., Japan)

Publication Committee Chair: Y. Miyamoto (Tokyo Tech, Japan) Vice Chair: M. Arai (Univ. of Miyazaki, Japan)

International Advisory Committee Members: H. Amano (Nagoya Univ., Japan) R. Bhat (Independent Consultant, USA) B. Biefeld (Sandia National Lab., USA)

J. Decobert (III-V Lab, France) S. DenBaars (UCSB, USA) R. Dupuis (Georgia Tech, USA) E. Hulicius (Inst. of Physics, Czech Republik) S. Irvine (Swansea Univ., UK) E. Kapon (EPFL, Switzerland) T. F. Kuech (Univ. of Wisconsin-Madison, USA) T. -C. Lu (National Chiao Tung Univ., Taiwan) N. Mason (Consultant, UK) A. Ougazzaden (Georgia Tech-CNRS, France) S. -J. Park (Institute of Science & Technology, Korea) A. Rudra (EPFL, Switzerland) F. Scholz (Ulm Univ., Germany) W. Stolz (Phillips-Univ. Marburg, Germany) G. B. Stringfellow (Univ. of Utah, USA) M. Sugiyama (The Univ. of Tokyo, Japan) C. Wang (MIT Lincoln Lab., USA) H. Yang (Institute of Nano-Tech and Nano-Bionics, China)

International Program Committee Members: R. Bhat (Independent Consultant, USA) A. Bhattacharya (Tata Inst. of Fundamental Research, India) J. Cederberg (MIT Lincoln Lab., USA) S. -J. Chang (National Cheng Kung Univ., Taiwan) J. Decobert (III-V Lab, France) H. Döscher (Fraunhofer ISI, Germany) Y. Fujiwara (Osaka Univ., Japan) J. Geisz (NREL, USA) N. Grandjean (EPFL, Switzerland) T. Hannappel (TU Ilmenau, Germany) H. Hardtdegen (Forschungszentrum Jülich, Germany) S. Irvine (Swansea Univ., UK) M. Iwaya (Meijo Univ., Japan) R. Katayama (Osaka Univ., Japan) M. Kneissl (Technische Univ. Berlin, Germany) B. Kunert (IMEC, Belgium) H. -C. Kuo (Inst. of Electro-optical Engineering National Chiao-Tung Univ., Taiwan) K. M. Lau (Hongkong UST, Hong Kong) X. -L. Li (Univ. of Illinois Urbana Champaign, USA) X. Li (KAUST, Saudi Arabia) W. Lundin (Ioffe Inst., Russia) K. Matsumoto (Taiyo Nippon Sanso Corp., Japan) L. Mawst (Univ. of Wisconsin Madison, USA) H. Miyake (Mie Univ., Japan) Y. Miyamoto (Tokyo Tech, Japan) O. -H. Nam (Korea Polytechnic Univ., Korea) E. Pelucchi (Univ. College Cork, Ireland)

J. Redwing (Penn. State Univ., USA) Z. Sitar (North Carolina State Univ., USA) T. Springthorpe (NRC, Canada) M. Sugiyama (The Univ. of Tokyo, Japan) H. Tan (Australian National Univ., Australia) N. Tansu (Lehigh Univ., USA) K. Tomioka (Hokkaido Univ., Japan) K. Volz (Philipps-Univ. Marburg, Germany) S. Watkins (Simon Fraser Univ., Canada) M. Weyers (Ferdinand-Braun-Institute, Germany) X. -G. Xu (Shandong Univ., China)