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Document Number: 94417 For technical questions, contact: [email protected] www.vishay.comRevision: 22-Apr-08 1

SCR/SCR and SCR/Diode

(MAGN-A-PAKTM Power Modules), 170/250 A

VSK.170PbF, .250PbF Series

Vishay High Power Products

FEATURES

High voltage

• Electrically isolated base plate

• 3500 VRMS isolating voltage

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• Lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

This new VSK series of MAGN-A-PAKTM modules uses highvoltage power thyristor/thyristor and thyristor/diode in sevenbasic configurations. The semiconductors are electrically

isolated from the metal base, allowing common heatsinksand compact assemblies to be built. They can beinterconnected to form single phase or three phase bridgesor as AC-switches when modules are connected inanti-parallel mode. These modules are intended for generalpurpose applications such as battery chargers, welders,motor drives, UPS, etc.

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IT(AV) 170/250 A

MAGN-A-PAKTM

RoHSCOMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS

IT(AV) 85 °C 170 250

AIT(RMS) 377 555

ITSM

50 Hz 5100 8500

60 Hz 5350 8900

I2t50 Hz 131 361

kA2s60 Hz 119 330

I2√t 1310 3610 kA2√s

VDRM /VRRM Up to 1600 V

TJ Range - 40 to 130 °C

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

VRRM /VDRM, MAXIMUM REPETITIVE

PEAK REVERSE AND OFF-STATE

BLOCKING VOLTAGE

V

VRSM, MAXIMUM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

IRRM /IDRM

AT 130 °C

MAXIMUM

mA

VSK.170-

VSK.250-

04 400 500

50

08 800 900

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700



www.vishay.com For technical questions, contact: [email protected] Document Number: 944172 Revision: 22-Apr-08


Vishay High Power Products SCR/SCR and SCR/Diode


ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Maximum average on-state current

at case temperature

IT(AV)180° conduction, half sine wave

170 250 A

85 85 °C

Maximum RMS on-state current IT(RMS) As AC switch 377 555

AMaximum peak, one-cycle on-state

non-repetitive, surge currentITSM

t = 10 ms No voltage

reapplied

Sinusoidal

half wave,

initial TJ =

TJ maximum

5100 8500

t = 8.3 ms 5350 8900

t = 10 ms 100 % VRRM

reapplied

4300 7150

t = 8.3 ms 4500 7500

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

131 361

kA2st = 8.3 ms 119 330

t = 10 ms 100 % VRRM

reapplied

92.5 255

t = 8.3 ms 84.4 233

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1310 3610 kA2√s

Low level value or threshold voltage VT(TO)1(16.7 % x π x IT(AV) < I < π x IT(AV)),TJ = TJ maximum

0.89 0.97V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.12 1.00

Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)),

TJ = TJ maximum1.34 0.60

mΩ

High level value on-state slope resistance rt2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.96 0.57

Maximum on-state voltage drop VTMITM = π x IT(AV), TJ = TJ maximum, 180° conduction,

average power = VT(TO) x IT(AV) + rf x (IT(RMS))2

1.60 1.44 V

Maximum holding current IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500

mAMaximum latching current IL

Anode supply = 12 V, resistive load = 1 Ω,

gate pulse: 10 V, 100 µs, TJ = 25 °C1000 1000

SWITCHING


Typical delay time td TJ = 25 °C, gate current = 1 A dIg /dt = 1 A/µs

Vd = 0.67 % VDRM

1.0

µsTypical rise time tr 2.0

Typical turn-off time tqITM = 300 A; dI/dt = 15 A/µs; TJ = TJ maximum;

VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω50 - 150

BLOCKING


Maximum peak reverse and

off-state leakage current

IRRM,

IDRMTJ = TJ maximum 50 mA

RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V

Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/µs






(MAGN-A-PAKTM Power Modules), 170/250 AVishay High Power Products

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

TRIGGERING


Maximum peak gate power PGM tp ≤ 5 ms, TJ = TJ maximum 10.0W

Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0

Maximum peak gate current + IGM tp ≤ 5 ms, TJ = TJ maximum 3.0 A

Maximum peak negative gate voltage - VGT tp ≤ 5 ms, TJ = TJ maximum 5.0

VMaximum required DC gate voltage to trigger VGT

TJ = - 40 °CAnode supply = 12 V,

resistive load; Ra = 1 Ω

4.0

TJ = 25 °C 3.0

TJ = TJ maximum 2.0

Maximum required DC gate current to trigger IGT

TJ = - 40 °CAnode supply = 12 V,

resistive load; Ra = 1 Ω

350

mATJ = 25 °C 200

TJ = TJ maximum 100

Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V

Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA

Maximum rate of rise of turned-on current dI/dtTJ = TJ maximum, ITM = 400 A,

rated VDRM applied500 A/µs

THERMAL AND MECHANICAL SPECIFICATIONS


Junction operating temperature range TJ - 40 to 130°C

Storage temperature range TStg - 40 to 150

Maximum thermal resistance,

junction to case per junctionRthJC DC operation 0.17 0.125

K/WTypical thermal resistance,

case to heatsink per moduleRthCS Mounting surface flat, smooth and greased 0.02 0.02

Mounting torque ± 10 %

MAP to heatsinkA mounting compound is recommended and

the torque should be rechecked after a

period of about 3 hours to allow for the

spread of the compound.

4 to 6 Nm

busbar to MAP

Approximate weight500 g

17.8 oz.

Case style MAGN-A-PAK

ΔR CONDUCTION PER JUNCTION

DEVICESSINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

UNITS180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033K/W

VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033







Fig. 1 - Current Ratings Characteristics


Fig. 3 - On-State Power Loss Characteristics


Fig. 5 - Maximum Non-Repetitive Surge Current


60

70

80

90

100

110

120

130

0 40 80 120 160 200

30°60°

90°

120°

180°

Average On-state Current (A)

M a x

i m u m

A l l o w a

b l e C a s e

T e m p e r a

t u r e

( ° C )

Conduction Angle

VSK.170.. SeriesRthJC (DC) = 0.17 K/W

60

70

80

90

100

110

120

130

0 50 100 150 200 250 300

DC

30°

60°

90°

120°180°


M a x

i m u m

A l l o w a

b l e C a s e

T e m p e r a

t u r e

( ° C )

Conduction Period

VSK.170.. Series

R (DC) = 0.17 K/WthJC

0

50

100

150

200

250

300

0 40 80 120 160 200

RMS Limit

Conduction Angle

M a x

i m u m

A v e r a g e

O n - s

t a t e P o w e r

L o s s

( W )


180°

120°90°60°

30°

VSK.170.. SeriesPer Junction

TJ = 125°C

0

50

100

150

200

250

300

350

0 50 100 150 200 250 300

DC180°

120°90°

60°30°

RMS Limit

Conduction Period

M a x

i m u m

A v e r a g e

O n - s

t a t e P o w

e r

L o s s

( W )


VSK.170.. Series

Per JunctionTJ = 125°C

2000

2500

3000

3500

4000

4500

5000

1 10 100Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And WithRated VRRM Applied Following Surge.

P e a

k H a

l f S i n e

W a v e

O n - s

t a t e C u r r e n

t ( A )

VSK.170.. Series

Per Junction

Initial TJ = 130°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

2000

2500

3000

3500

4000

4500

5000

0.01 0.1 1 P e a

k H a

l f S i n e

W a v e

O n - s t a

t e C u r r e n

t ( A )

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained .

Initial TJ = 130°C

No Voltage Reapplied

Rated VRRM Reapplied











0 20 40 60 80 100 120

0 .3 5 K / W

0 .3 K / W

0 .2 5 K / W

0 . 2 K / W

0 . 0 8 K / W

0 . 1 2 K / W

0 . 1 6 K / W

Maximum Allowable Ambient Temperature (°C)

R

= 0 . 0 4 K /

W - D e l t a

R

t h S A

0

50

100

150

200

250

300

350

400

0 50 100 150 200 250 300 350 400

180°

120°

90°

60°

30°

M a x i m u m

T o t a l O n - s t a t e P o w

e r L o s s ( W )

Total RMS Output Current (A)

Conduction Angle

VSK.170.. Series

Per Module

TJ = 130°C

0 20 40 60 80 100 120


R

= 0 . 0 2

K / W - D e l t a

R

0 . 0 4 K / W

t h S A

0 . 0 6 K / W

0 . 0 8 K / W

0 .1 K / W

0 .1 2 K / W 0 .1 6 K / W 0 .2 K / W 0 .2 5 K / W

0 .3 5 K / W

0

100

200

300

400

500

600

700

800

900

1000

0 50 100 150 200 250 300 350

Total Output Current (A)

M a x

i m u m

T o

t a l P o w e r

L o s s

( W )

180°

(Sine)

180°

(Rect)

2 x VSK.170.. Series

Single Phase Bridge

Connected

TJ = 130°C

0 20 40 60 80 100 120


0 .2 5 K / W

0 .1 6 K / W

0 .1 2 K / W

0 .1 K / W

0 .0 8 K / W

0 . 0 5 K / W

0 . 0 3 K / W

R

= 0 . 0

1 K / W

- D e l t a

R

t h S A

0

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500


M a x i m

u m

T o

t a l P o w e r

L o s s

( W )

120°(Rect)


Three Phase BridgeConnected

TJ = 130°C













60

70

80

90

100

110

120

130

0 50 100 150 200 250 300

30°60°

90°

120°

180°


M a x

i m u m

A l l o w a

b l e C a s e

T e m p

e r a

t u r e

( ° C )

Conduction Angle

VSK.250.. Series

RthJC(DC) = 0.125 K/W

60

70

80

90

100

110

120

130

0 100 200 300 400 500

DC

30°

60°

90°

120°

180°


M a x

i m u m

A l l o w a

b l e C a s e

T e m p e r a

t u r e

( ° C )

Conduction Period

VSK.250.. SeriesRthJC (DC) = 0.125 K/W

0

50

100

150

200

250

300

350

0 50 100 150 200 250

RMS Limit

Conduction Angle

M a x

i m u m

A v e r a g e

O n - s t a

t e P o w e r

L o s s

( W )


180°120°90°

60°

30°

VSK.250.. Series

Per Junction

T = 130°CJ

0

50

100

150

200

250

300350

400

450

500

0 50 100 150 200 250 300 350 400

DC

180°120°

90°

60°30°

RMS Limit

Conduction Period

M a x

i m u m

A v e r a g e

O n - s t a

t e P o w e r

L o s s

( W )


VSK.250.. Series

Per Junction

TJ = 130°C

3500

4000

4500

5000

5500

6000

6500

7000

7500

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

P e a

k H a

l f S i n e

W a v e

O n - s

t a t e C u r r e n

t ( A )


At Any Rated Load Condition And WithRated VRRM Applied Following Surge.

Initial T = 130°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

J

3000

4000

5000

6000

7000

8000

9000

0.01 0.1 1

P e a

k H a

l f S i n e

W a v e

O n - s t a

t e C u r r e n

t ( A )

Pulse Train Duration (s)

Maximum Non Repetitive Surge CurrentVersus Pulse Train Duration. Control

Of Conduction May Not Be Maintained .

VSK.250.. Series

Per Junction

Initial TJ = 130°C

No Voltage Reapplied

Rated VRRM Reapplied










0 20 40 60 80 100 120


0 .3 K / W

0 .2 5 K / W

0 .2 0 K / W

0 .1 6 K / W

0 .1 2 K / W

0 . 0 8 K / W

0 . 0 5 K / W

R

= 0 . 0 2

K / W - D e l t a

R

t h S A

0

100

200

300

400

500

600

700

0 100 200 300 400 500 600

180°

120°

90°

60°

30°

M a x

i m u m

T o

t a l O n - s

t a t e P o w e r

L o s s

( W )

Conduction angle

Total RMS Output Current (A)

VSK.250.. Series

Per Module

TJ = 130°C

0 20 40 60 80 100 120


R

= 0 . 0 1

K / W

- D e l t a

R

t h S A

0 . 0 2 K / W

0 . 0 3 K / W

0 . 0 4 K / W

0 .0 5 K / W

0 .0 6 K / W

0 .1 K / W 0 .1 2 K / W 0 .1 6 K / W

0 .3 K / W

0

200

400

600

800

1000

1200

1400

0 100 200 300 400 500

M a x

i m u m

T o

t a l P o w e r

L o s s

( W )


180°

(Sine)

180°

(Rect)


Single Phase Bridge

Connected

TJ = 130°C

0 20 40 60 80 100 120


R

= 0 . 0 1 K / W

- D e l t a

R

0 . 0 3 K / W

0 . 0 4 K / W

0 .0 5 K / W

0 .0 6 K / W

0 .0 8 K / W

0 .1 K / W 0 .1 2 K / W 0 .1 6

K / W 0 .2 0 K / W

0 .2 5 K / W

t h S A

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 100 200 300 400 500 600 700

M a x

i m u m

T o

t a l P o w e r

L o s s

( W )


120°

(Rect)


Three Phase Bridge

ConnectedTJ = 130°C







Fig. 19 - On-State Voltage Drop Characteristics

Fig. 20 - On-State Voltage Drop Characteristics

Fig. 21 - Reverse Recovery Charge Characteristics

Fig. 22 - Reverse Recovery Charge Characteristics

Fig. 23 - Gate Characteristics

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

100

1000

10000

I n s t a n t a n e o u s F o r w a r d C u r r e n t ( V )

Instantaneous Forward Voltage (V)

Tj = 25°C

Tj = 130°C

VSK.170 Series

Per Junction

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

100

1000

10000

I n s t a n t a n e o u s F o r w a r d C u r r e n t ( V )

Instantaneous Forward Voltage (V)

Tj = 25°C

Tj = 130°C

VSK.250 Series

Per Junction

200

400

600

800

1000

1200

1400

1600

1800

0 10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

T y p

i c a

l R e v e r s e

R e c o v e r y

C h a r g e -

Q r r

( µ C )

ITM

= 800 A

500 A

300 A

200 A

100 A

VSK.170.. Series

TJ = 130 °C

Per Junction

50 A

200

400

600

800

1000

1200

1400

1600

1800

2000

22002400

0 10 20 30 40 50 60 70 80 90 100 T y p

i c a

l R e v e r s e

R e c o v e r y

C h a r g e -

Q r r

( µ C

)

Rate Of Fall Of On-state Current - di/dt (A/µs)

500 A

300 A

200 A

100 A

T = 130 °C

Per JunctionJ

ITM

= 800 A

50 A

VSK.250.. Series

TJ = 130 °C

Per Junction

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

T j =2 5

° C

T j =1 2 5

° C

T j =-4 0

° C

(2) (3)

Instantaneous Gate Current (A)

I n s t a

n t a n e o u s

G a

t e V o

l t a g e

( V ) a) Recommended load line for

b) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1µs

tr<=1 µs

Rectangular gate pulse

<=30% rated di/dt : 10V, 20ohms

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

VSK.170/250 Series Frequency Limited by PG(AV)

(1) (4)







Fig. 24 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Note

• To order the optional hardware go to www.vishay.com/doc?95172

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

t h J C VSK.170.. Series

Steady State Value:

R = 0.17 K/W

R = 0.125 K/W(DC Operation)

thJC

thJC

T r a n s

i e n

t T h e r m a

l I m p e

d a n c e

Z

( K / W )

VSK.250.. Series

1 - Module type

2 - Circuit configuration (see dimensions - link at the end of datasheet)

3 - Current rating

4 - Voltage code x 100 = VRRM (see Voltage Ratings table)

5 - Lead (Pb)-free

Device code

51 32 4

VSK T 250 - 16 PbF







CIRCUIT CONFIGURATION

VSKL...

VSKU... VSKV... VSKN...

VSKH...VSKT...

Available from 400 V to 1600 V

Available on 1600 V

Contact factory fordifferent requirement

+

-

~ ~

+

-

K1G1 G2K2

+

-

~ ~

+

-

K1G1

+

-

~ ~

+

-

-

-

+ +

-

-

K1G1 G2K2

+

+

- -

+

+

K1G1 G2 K2

-

-

+ +

-

-

G2K2

+

+

-

+

VSKK...

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95086



Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

Disclaimer

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All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

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11 datasheet joca

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