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    Term Paper

    ELECTRONICS DEVICE AND CIRCUIT

    Submitted by:

    JAGBEER YADAV

    Roll No. : A05

    Section : D6905

    Regd. No. : 10906497

    Submitted to:

    MISS NIDHI MADAM

    (ELECTRONICS DEPT.)

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    TOPIC:-

    LIGHT EMITTING DIODE

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    Light-emitting diode

    Blue, green, and red LEDs; these can be combined to produce most perceptible colors,

    including white.

    Infrared and ultraviolet (UVA) LEDs are also available.

    A light-emitting-diode (LED) is a semiconductor diode that emits light when an electric

    current is applied in the forward direction of the device, as in the simple LED circuit. The

    effect is a form of electroluminescence where incoherent and narrow-spectrum light is

    emitted from thep-n junction.

    LEDs are widely used as indicator lights on electronic devices and increasingly in higherpower applications such as flashlights and area lighting. An LED is usually a small area (less

    than 1 mm2) light source, often with optics added to the chip to shape its radiation pattern and

    assist in reflection. The colorof the emitted light depends on the composition and condition

    of the semiconducting material used, and can be infrared, visible, or ultraviolet. Besides

    lighting, interesting applications include using UV-LEDs for sterilization of water and

    disinfection of devices,[4] and as agrow light to enhancephotosynthesis in plants.

    http://en.wikipedia.org/wiki/Semiconductor_diodehttp://en.wikipedia.org/wiki/Electric_currenthttp://en.wikipedia.org/wiki/Electric_currenthttp://en.wikipedia.org/wiki/LED_circuithttp://en.wikipedia.org/wiki/Electroluminescencehttp://en.wikipedia.org/wiki/Coherence_(physics)http://en.wikipedia.org/wiki/Spectrumhttp://en.wikipedia.org/wiki/P-n_junctionhttp://en.wikipedia.org/wiki/Lightinghttp://en.wikipedia.org/wiki/Colorhttp://en.wikipedia.org/wiki/Infraredhttp://en.wikipedia.org/wiki/Visible_spectrumhttp://en.wikipedia.org/wiki/Ultraviolethttp://en.wikipedia.org/wiki/UVhttp://en.wikipedia.org/wiki/LED#cite_note-water-3http://en.wikipedia.org/wiki/Grow_lighthttp://en.wikipedia.org/wiki/Grow_lighthttp://en.wikipedia.org/wiki/Photosynthesishttp://en.wikipedia.org/wiki/Image:LED_symbol.svghttp://en.wikipedia.org/wiki/Image:RBG-LED.jpghttp://en.wikipedia.org/wiki/Electric_currenthttp://en.wikipedia.org/wiki/Electric_currenthttp://en.wikipedia.org/wiki/LED_circuithttp://en.wikipedia.org/wiki/Electroluminescencehttp://en.wikipedia.org/wiki/Coherence_(physics)http://en.wikipedia.org/wiki/Spectrumhttp://en.wikipedia.org/wiki/P-n_junctionhttp://en.wikipedia.org/wiki/Lightinghttp://en.wikipedia.org/wiki/Colorhttp://en.wikipedia.org/wiki/Infraredhttp://en.wikipedia.org/wiki/Visible_spectrumhttp://en.wikipedia.org/wiki/Ultraviolethttp://en.wikipedia.org/wiki/UVhttp://en.wikipedia.org/wiki/LED#cite_note-water-3http://en.wikipedia.org/wiki/Grow_lighthttp://en.wikipedia.org/wiki/Photosynthesishttp://en.wikipedia.org/wiki/Semiconductor_diode
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    HistoryDiscovery and development

    The first known report of a light-emitting solid-state diode was made in 1907 by the British

    experimenter H. J. Round of Marconi Labs. Russian Oleg Vladimirovich Losev

    independently created the first LED in the mid 1920s; his research, though distributed in

    Russian, German and British scientific journals, was ignored, and no practical use was made

    of the discovery for several decades. Rubin Braunstein of the Radio Corporation of America

    reported on infrared emission from gallium arsenide (GaAs) and other semiconductor alloys

    in 1955. Braunstein observed infrared emission generated by simple diode structures using

    GaSb, GaAs, InP, and Ge-Si alloys at room temperature and at 77 K. In 1961, experimenters

    Bob Biard and Gary Pittman working at Texas Instruments, found that gallium arsenide gave

    off infrared radiation when electric current was applied. Biard and Pittman were able to

    establish the priority of their work and received the patent for the infrared light-emitting

    diode.

    The first practical visible-spectrum (red) LED was developed in 1962 byNick Holonyak Jr.,

    while working at General Electric Company. He later moved to the University of Illinois at

    Urbana-Champaign. Holonyak is seen as the "father of the light-emitting diode". M. George

    Craford, a former graduate student of Holonyak's, invented the first yellow LED and 10x

    brighter red and red-orange LEDs in 1972.

    Shuji Nakamura ofNichia Corporation of Japan demonstrated the first high-brightness blue

    LED based on InGaN borrowing on critical developments in GaN nucleation on sapphire

    substrates and the demonstration of p-type doping of GaN which were developed by I.

    Akasaki and H. Amano in Nagoya. In 1995, Alberto Barbieri at the Cardiff University

    Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs

    demonstrating very high result by using a transparent contact made of indium tin oxide (ITO)

    on (AlGaInP/GaAs) LED. The existence of blue LEDs and high efficiency LEDs quickly led

    to the development of the first white LED, which employed a Y 3Al5O12:Ce, or "YAG",

    phosphor coating to mix yellow (down-converted) light with blue to produce light that

    appears white. Nakamura was awarded the 2006 Millennium Technology Prize for hisinvention.

    The development of LED technology has caused their efficiency and light output to increase

    exponentially, with a doubling occurring about every 36 months since the 1960s, in a similar

    way to Moore's law. The advances are generally attributed to the parallel development of

    other semiconductor technologies and advances in optics and material science. This trend is

    normally called Haitz's Law after Dr. Roland Haitz.

    http://en.wikipedia.org/wiki/H._J._Roundhttp://en.wikipedia.org/wiki/Marconi_Labshttp://en.wikipedia.org/wiki/Oleg_Vladimirovich_Losevhttp://en.wikipedia.org/w/index.php?title=Rubin_Braunstein&action=edit&redlink=1http://en.wikipedia.org/wiki/Radio_Corporation_of_Americahttp://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Gallium_antimonidehttp://en.wikipedia.org/wiki/GaAshttp://en.wikipedia.org/wiki/Indium_phosphidehttp://en.wikipedia.org/wiki/Texas_Instrumentshttp://en.wikipedia.org/wiki/Diodehttp://en.wikipedia.org/wiki/Nick_Holonyakhttp://en.wikipedia.org/wiki/General_Electric_Companyhttp://en.wikipedia.org/wiki/General_Electric_Companyhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana-Champaignhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana-Champaignhttp://en.wikipedia.org/wiki/Shuji_Nakamurahttp://en.wikipedia.org/wiki/Nichia_Corporationhttp://en.wikipedia.org/wiki/Indium_gallium_nitridehttp://en.wikipedia.org/wiki/Gallium_nitridehttp://en.wikipedia.org/wiki/Nagoyahttp://en.wikipedia.org/w/index.php?title=Alberto_Barbieri&action=edit&redlink=1http://en.wikipedia.org/wiki/Cardiff_Universityhttp://en.wikipedia.org/wiki/Indium_tin_oxidehttp://en.wikipedia.org/wiki/YAGhttp://en.wikipedia.org/wiki/Millennium_Technology_Prizehttp://en.wikipedia.org/wiki/Exponentiallyhttp://en.wikipedia.org/wiki/Exponentiallyhttp://en.wikipedia.org/wiki/Moore's_lawhttp://en.wikipedia.org/wiki/Haitz's_Lawhttp://en.wikipedia.org/wiki/H._J._Roundhttp://en.wikipedia.org/wiki/Marconi_Labshttp://en.wikipedia.org/wiki/Oleg_Vladimirovich_Losevhttp://en.wikipedia.org/w/index.php?title=Rubin_Braunstein&action=edit&redlink=1http://en.wikipedia.org/wiki/Radio_Corporation_of_Americahttp://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Gallium_antimonidehttp://en.wikipedia.org/wiki/GaAshttp://en.wikipedia.org/wiki/Indium_phosphidehttp://en.wikipedia.org/wiki/Texas_Instrumentshttp://en.wikipedia.org/wiki/Diodehttp://en.wikipedia.org/wiki/Nick_Holonyakhttp://en.wikipedia.org/wiki/General_Electric_Companyhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana-Champaignhttp://en.wikipedia.org/wiki/University_of_Illinois_at_Urbana-Champaignhttp://en.wikipedia.org/wiki/Shuji_Nakamurahttp://en.wikipedia.org/wiki/Nichia_Corporationhttp://en.wikipedia.org/wiki/Indium_gallium_nitridehttp://en.wikipedia.org/wiki/Gallium_nitridehttp://en.wikipedia.org/wiki/Nagoyahttp://en.wikipedia.org/w/index.php?title=Alberto_Barbieri&action=edit&redlink=1http://en.wikipedia.org/wiki/Cardiff_Universityhttp://en.wikipedia.org/wiki/Indium_tin_oxidehttp://en.wikipedia.org/wiki/YAGhttp://en.wikipedia.org/wiki/Millennium_Technology_Prizehttp://en.wikipedia.org/wiki/Exponentiallyhttp://en.wikipedia.org/wiki/Moore's_lawhttp://en.wikipedia.org/wiki/Haitz's_Law
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    Practical use

    The first commercial LEDs were commonly used as replacements for incandescent

    indicators, and in seven-segment displays, first in expensive equipment such as laboratory

    and electronics test equipment, then later in such appliances as TVs, radios, telephones,

    calculators, and even watches (see list of signal applications). These red LEDs were brightenough only for use as indicators, as the light output was not enough to illuminate an area.

    Later, other colors became widely available and also appeared in appliances and equipment.

    As the LED materials technology became more advanced, the light output was increased,

    while maintaining the efficiency and the reliability to an acceptable level, causing LEDs to

    become bright enough to be used for illumination, in various applications such as lamps and

    other lighting fixtures.

    Most LEDs were made in the very common 5 mm T1 and 3 mm T1 packages, but withhigher power, it has become increasingly necessary to shed excess heat in order to maintain

    reliability, so more complex packages adapted for efficient heat dissipation are becoming

    common. Packages for state-of-the-art high power LEDs bear little resemblance to early

    LEDs.

    LED technology

    Physical principles

    The inner workings of an LED

    http://en.wikipedia.org/wiki/Incandescencehttp://en.wikipedia.org/wiki/Seven-segment_displayhttp://en.wikipedia.org/wiki/Led#Indicators_and_signshttp://en.wikipedia.org/wiki/Led#Lightinghttp://en.wikipedia.org/wiki/Led#High_power_LEDshttp://en.wikipedia.org/wiki/Image:Rectifier_vi_curve.GIFhttp://en.wikipedia.org/wiki/Image:PnJunction-LED-E.PNGhttp://en.wikipedia.org/wiki/Incandescencehttp://en.wikipedia.org/wiki/Seven-segment_displayhttp://en.wikipedia.org/wiki/Led#Indicators_and_signshttp://en.wikipedia.org/wiki/Led#Lightinghttp://en.wikipedia.org/wiki/Led#High_power_LEDs
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    Like a normal diode, the LED consists of a chip of semiconducting material impregnated, or

    doped, with impurities to create a p-n junction. As in other diodes, current flows easily from

    the p-side, oranode, to the n-side, orcathode, but not in the reverse direction. Charge-carriers

    electrons and holesflow into the junction from electrodes with different voltages. Whenan electron meets a hole, it falls into a lowerenergy level, and releases energy in the form of

    aphoton.

    The wavelength of the light emitted, and therefore its color, depends on the band gap energy

    of the materials forming the p-n junction. In silicon orgermanium diodes, the electrons and

    holes recombine by a non-radiative transition which produces no optical emission, because

    these are indirect band gap materials. The materials used for the LED have a direct band gap

    with energies corresponding to near-infrared, visible or near-ultraviolet light.

    LED development began with infrared and red devices made with gallium arsenide.

    Advances in materials science have made possible the production of devices with ever-

    shorterwavelengths, producing light in a variety of colors.

    LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer

    deposited on its surface. P-type substrates, while less common, occur as well. Many

    commercial LEDs, especially GaN/InGaN, also usesapphiresubstrate.

    Colors and Materials

    Conventional LEDs are made from a variety of inorganic semiconductor materials, the

    following table shows the available colors with wavelength range, voltage drop and material:

    ColorWavelength

    (nm)Voltage (V) Semi-conductor Material

    Infrared > 760 V < 1.9Gallium arsenide (GaAs)

    Aluminium gallium arsenide (AlGaAs)

    Red 610 < < 1.63 < VAluminium gallium arsenide (AlGaAs)

    http://en.wikipedia.org/wiki/Diodehttp://en.wikipedia.org/wiki/Doping_(semiconductor)http://en.wikipedia.org/wiki/P-n_junctionhttp://en.wikipedia.org/wiki/Anodehttp://en.wikipedia.org/wiki/Cathodehttp://en.wikipedia.org/wiki/Electronhttp://en.wikipedia.org/wiki/Electron_holehttp://en.wikipedia.org/wiki/Electrodehttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Energy_levelhttp://en.wikipedia.org/wiki/Energyhttp://en.wikipedia.org/wiki/Photonhttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Band_gaphttp://en.wikipedia.org/wiki/Siliconhttp://en.wikipedia.org/wiki/Germaniumhttp://en.wikipedia.org/wiki/Indirect_band_gaphttp://en.wikipedia.org/wiki/Direct_band_gaphttp://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Materials_sciencehttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Sapphirehttp://en.wikipedia.org/wiki/Sapphirehttp://en.wikipedia.org/wiki/Sapphirehttp://en.wikipedia.org/wiki/Semiconductor_materialshttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Infraredhttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Delta_(letter)http://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Aluminium_gallium_arsenidehttp://en.wikipedia.org/wiki/Redhttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Aluminium_gallium_arsenidehttp://en.wikipedia.org/wiki/Diodehttp://en.wikipedia.org/wiki/Doping_(semiconductor)http://en.wikipedia.org/wiki/P-n_junctionhttp://en.wikipedia.org/wiki/Anodehttp://en.wikipedia.org/wiki/Cathodehttp://en.wikipedia.org/wiki/Electronhttp://en.wikipedia.org/wiki/Electron_holehttp://en.wikipedia.org/wiki/Electrodehttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Energy_levelhttp://en.wikipedia.org/wiki/Energyhttp://en.wikipedia.org/wiki/Photonhttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Band_gaphttp://en.wikipedia.org/wiki/Siliconhttp://en.wikipedia.org/wiki/Germaniumhttp://en.wikipedia.org/wiki/Indirect_band_gaphttp://en.wikipedia.org/wiki/Direct_band_gaphttp://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Materials_sciencehttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Sapphirehttp://en.wikipedia.org/wiki/Semiconductor_materialshttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Infraredhttp://en.wikipedia.org/wiki/Wavelengthhttp://en.wikipedia.org/wiki/Delta_(letter)http://en.wikipedia.org/wiki/Gallium_arsenidehttp://en.wikipedia.org/wiki/Aluminium_gallium_arsenidehttp://en.wikipedia.org/wiki/Redhttp://en.wikipedia.org/wiki/Voltagehttp://en.wikipedia.org/wiki/Aluminium_gallium_arsenide
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    760 < 2.03

    Gallium arsenide phosphide (GaAsP)

    Aluminium gallium indium phosphide

    (AlGaInP)

    Gallium(III) phosphide (GaP)

    Orange590