1-lesson1-electronic device 2010 - tomy
TRANSCRIPT
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Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Dr. Arief Udhiarto, S.T, M.T: Tomy Abuzairi, ST, M.Sc
Source : Professor Nathan Cheung, U.C. Berkeley
ELECTRONICS DEVICE 00-01
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Schedule
Lectures:K.209 Tuesday 08:00-09.50 AM
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Relation to Other Courses
Prerequisite:Simple pn-junction, BJT and MOSFET theory;BJT and MOSFET circuit applications.Familiarity with the Bohr atomic model
Relation to other courses:Electronics Engineering
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Reading Material
References Text :Device Electronics for Integrated Circuits : Richard S.Muller & Theodore I. Kamins (John Wiley 2003)
Semiconductor Device Fundamentals : R. F. Pierret(Addison Wesley, 1996)
ReadingText:Solid State Electronic Devices 4 th Edition : B. G.Stretman, S. Banerjee (Prentice Hall, 2000)
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SAP1. Course :Electronics Device2. Course Code :EEE SKS: 2 Semester: 3 3. Instructor :Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)
Dr. Arief Udhiarto, S.T, M.T (AU)Tomy Abuzairi, S.T, M.Sc (TA)
4. Class System :Single5. Courses Objective : mastering in basic concept of integrated-
circuit operation devices specially in silicon-integrated circuits and its Processing Technology
6. Grading(%) :(20) Homework , (30) MT,(30) Seminar, (20) FT
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Pre Test
1. What do you know about fermi energy?2. What is hole?3. What do you know about CMOS?
10 Minutes Only
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Course Organization
Semiconductor Physics;Metal-Semiconductor Contact
PN-Junction
Bipolar Junction TransistorMOSFETIC Processing
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Overview ofSemiconductor Electronics
Reading Assignment :Kamins Chap 1, Chap 3
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Applications of SemiconductorDevices
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Semiconductor
Devices
draingate
source
n+n+
p - Si
MOSFET
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Evolution of Bipolar Junction Transistors
The First Point-contact Transistor,
Bell Laboratories(1947) SiGe BJT(2000) Si Nanowire BJT(2003)
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Today and Tomorrow
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State-of-the-art Transistor Size
1m = 10-6m = 10-4 cm = 1000 nm1 nm =10
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Advantages of Technology Scaling
More dies per wafer, lower cost Higher -speed devices and circuits
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Roadmap of Transistor
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Moore Law (Gordon Moore 1965)
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The nu m ber of t rans i s tors in ach ip w i ll be dou b led every 18m o n t h s
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History
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1904 Vacuum Tube1925 Concept of Field Effect Transistor
1947 Bipolar Transistor1958 Bipolar IC1959 MOS Transistor1961 IC-MOS Technology1972 MOS Microprocessor
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Semiconductors
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Elemental SemiconductorSi, Ge
Compound SemiconductorGaAs - Gallium arsenideGaP - Gallium phosphide
AlAs - Aluminum arsenide AlP - Aluminum phosphideInP - Indium PhosphideZnO Zinc OxideCdSe Cadmium selenide
Etc. AlloysSi1-xGex, AlxGa1-x As
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C t ll g hi Pl d Si
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Crystallographic Planes and SiWafers
Silicon wafers are usually cut along the (100)plane with a flat or notch to orient the waferduring IC fabrication
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Crystallographic Planes
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Si (100)
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Si (111)
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Si (100) and Si (110)
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Si (100) and Si (110)
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Silicon Atom1s, 2s, 2p orbitals filled by 10electrons3s, 3p orbitals filled by 4electrons
4 nearest neighborsunit cell length = 5.435 1022 atoms/cm3
diamond cubic structure
The Si Atom The Si Crystal
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Bohr Model
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The Simplified Energy Band
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The Simplified Energy BandDiagram
S i d t I l t d
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Semiconductors, Insulators, andConductors
Totally filled band and totally empty bands do not allowcurrent flow. (just as there is no motion of liquid in atotally filled or totally empty bottle
Metal conduction band is half-filled Semiconductors have lower Egs than insulators and
can be doped
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Density of States
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Concept of a hole
An unoccupied electronic state inthe valence band is called a hole Treat as positively charge mobile particle in the semiconductors
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Electrons and Holes
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