http://www.weitron.com.twWEITRON

C945NPN Transistors

Lead(Pb)-FreePbTO-92

12

3

1. EMITTER2. COLLECTOR3. BASE

1/4 08-Feb-06

°C

°CJunction Temperature Tj

TSTG

+150

0.4

Storage Temperature -40 to + 150

Collector Output CapacitanceVCB = 10V, IE = 0, f = 1MHz

Noise figureVCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz

TransitionFrequenceVCE = 6V, IC = 10mA, f = 30MHz

--

-

--

- -

-

700

V

ON CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

7040

CLASSIFICATION OF hFE1

Rank

Range

YO

70-140

0.3

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VBE(sat) V1.0

200

- 3.0 pF-

4.0 10 dB-

BLGR

120-240 200-400 350-700

Cob

NF

MHz

VCE(sat)

fT

Base-Emitter VoltageIC=100mA, IB=10mA

hFE1hFE2

DC Current GainVCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA

Collector-Emitter Saturation VoltageIC=100mA, IB=10mA

C945

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Characteristics Symbol Min Typ Max Unit

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C945

3/4 08-Feb-06

FIG1. Total Power Dissipationvs Ambient Temperature

FIG.2 Collector Current vs Collectorto Emitter Voltage

FIG.4 Gain Bandwidth Product vsEmitter Currentvs Collector Current

FIG.3 Collector and Bade Saturation Voltage

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DimABCDEGHJKL

Min3.301.100.380.364.403.434.30

MaxTO-92

TO-92 Outline Dimensions unit:mm

3.701.400.550.514.70

-4.70

2.6414.50

1.270TYP

E

C

H

A

BD

L

J

K

G

2.4414.10

C945

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