AD8221

8

7

6

5

1

2

3

4

–IN

RG

RG

+VS

VOUT

REF

–VS+IN

TOP VIEW

AD8221

0314

9-00

1

1

40

50

60

70

80

90

CM

RR

(d

B)

100

110

120

FREQUENCY (Hz)

10010 1k 10k 100k

0314

9-00

2

AD8221

COMPETITOR 1

COMPETITOR 2

2. CMRR (G = 1)

MSOP

1 ( 1 1000) ±2.3 V ±18 V

−40°C +85°C

125°C1

CMRR 80 dB( ,10 kHz G = 1) −3 dB 825 kHz (G = 1)

2 V/μs

8 nV/√Hz ( 1 kHz) 0.25 μV (0.1 Hz 10 Hz)

(AD8221BR) CMRR 90 dB ( ,G = 1)

25 μV( ) 0.3 μV/°C( ) 0.4 nA( )

AD8221(CMRR)

CMRR 200 HzG = 1 AD8221 CMRR 80 dB10 kHz (CMRR)

AD8221

1 1000 AD8221±10 V

8 SOIC MSOPMSOP SOIC

−40°C +85°CAD8221 −40°C +125°C1

1 °C °C

ADI ADI ADI

Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700 www.analog.com

Fax: 781.461.3113 ©2003–2007 Analog Devices, Inc. All rights reserved.

AD8221

Rev. B | Page 2 of 24

2007 9 — A B

............................................................................................ 1........................................................................................... 1........................................................................................... 1

........................................................................................ 1................................................................................... 2................................................................................... 3

........................................................................ 8................................................................................... 8

　ESD ................................................................................ 8............................................................................ 9

................................................................................. 16............................................................................. 17

“ ” ......................................................................... 11 .............................................................................. 32 .............................................................................. 515 .................................................................................. 1132 .................................................................................. 1333 34 35 ........................................................... 14

“ ” ............................................................... 21“ ” ............................................................... 22

2003 11 — 0 A“ ” ......................................................................... 1“ ” ................................................................. 4“ ” ............................................................... 13“ ” ............................................................... 14

2003 10 — 0

...................................................................................... 17.............................................................................. 18

................................................................... 18............................................................... 18

.............................................................................. 18...................................................................... 19

.......................................................................... 19............ 19

........................................................... 20.................................................................................. 21

.............................................................................. 22

AD8221

Rev. B | Page 3 of 24

VS = ±15 V VREF = 0 V TA = 25°C G = 1 RL = 2 kΩ

1 AR BR

DC 60 Hz

1 kΩVCM = −10 V +10 V

VCM = −10 V +10 V

G = 1 80 90 dB G = 10 100 110 dB G = 100 120 130 dB G = 1000 130 140 dB

CMRR(10 kHz) G = 1 80 80 dB G = 10 90 100 dB G = 100 100 110 dB G = 1000 100 110 dB

=√eNI2 + (eNO/G)2

1 kHz eNI VIN+, VIN−, VREF=0 8 8 nV/√Hz eNO 75 75 nV/√Hz

RTI f = 0.1 Hz 10 Hz G = 1 2 2 μV p-p G = 10 0.5 0.5 μV p-p G = 100 1000 0.25 0.25 μV p-p

f = 1 kHz 40 40 fA/√Hz f = 0.1 Hz 10 Hz 6 6 pA p-p

1 VOSI VS = ±5 V ±15 V 60 25 μV

T = −40°C +85°C 86 45 μV (TC) 0.4 0.3 μV/°C

VOSO VS = ±5 V ±15 V 300 200 μV T = −40°C +85°C 0.66 0.45 mV

(TC) 6 5 μV/°C (PSR) VS = ±2.3 V ±18 V

G = 1 90 110 94 110 dB G = 10 110 120 114 130 dB G = 100 124 130 130 140 dB G = 1000 130 140 140 150 dB

0.5 1.5 0.2 0.4 nA

T = −40°C +85°C 2.0 1 nA (TC) 1 1 pA/°C

0.2 0.6 0.1 0.4 nA T = −40°C +85°C 0.8 0.6 nA

(TC) 1 1 pA/°C

RIN 20 20 kΩ IIN VIN+, VIN−, VREF = 0 50 60 50 60 μA

–VS +VS –VS +VS V 1 ± 0.0001 1 ± 0.0001 V/V

AD8221

Rev. B | Page 4 of 24

AR BR

VS = ±2.3 V ±18 V ±2.3 ±18 ±2.3 ±18 V

0.9 1 0.9 1 mA T = −40°C +85°C 1 1.2 1 1.2 mA

-3 dB

G = 1 825 825 kHz G = 10 562 562 kHz G = 100 100 100 kHz G = 1000 14.7 14.7 kHz

0.01% 10 V G = 1 100 10 10 μs G = 1000 80 80 μs

0.001% 10 V G = 1 100 13 13 μs G = 1000 110 110 μs

G = 1 1.5 2 1.5 2 V/μs G = 5 100 2 2.5 2 2.5 V/μs

G = 1 + (49.4 kΩ/RG) 1 1000 1 1000 V/V

VOUT ± 10 V G = 1 0.03 0.02 % G = 10 0.3 0.15 % G = 100 0.3 0.15 % G = 1000 0.3 0.15 %

VOUT =−10 V +10 V G = 1 to 10 RL = 10 kΩ 3 10 3 10 ppm G = 100 RL = 10 kΩ 5 15 5 15 ppm G = 1000 RL = 10 kΩ 10 40 10 40 ppm G = 1 to 100 RL = 2 kΩ 10 95 10 95 ppm

G = 1 3 10 2 5 ppm/°C G > 12 –50 –50 ppm/°C

100||2 100||2 GΩ||pF 100||2 100||2 GΩ||pF

3 VS = ±2.3 V ±5 V –VS + 1.9 +VS − 1.1 –VS + 1.9 +VS − 1.1 V T = −40°C +85°C –VS + 2.0 +VS − 1.2 –VS + 2.0 +VS − 1.2 V VS = ±5 V ±18 V –VS + 1.9 +VS − 1.2 –VS + 1.9 +VS − 1.2 V T =−40°C +85°C –VS + 2.0 +VS − 1.2 –VS + 2.0 +VS − 1.2 V RL = 10 kΩ VS = ±2.3 V ±5 V –VS + 1.1 +VS − 1.2 –VS + 1.1 +VS − 1.2 V T = −40°C +85°C –VS + 1.4 +Vs − 1.3 –VS + 1.4 +VS − 1.3 V VS = ±5 V ±18 V –VS + 1.2 +VS − 1.4 –VS + 1.2 +VS − 1.4 V T = –40°C +85°C –VS + 1.6 +VS − 1.5 –VS + 1.6 +VS − 1.5 V

18 18 mA

AD8221

Rev. B | Page 5 of 24

AR BR

–40 +85 –40 +85 °C

4 –40 +125 –40 +125 °C

2ARM

(CMRR) DC 60 Hz 1 kΩ VCM = −10 V +10 V

G = 1 80 dB G = 10 100 dB G = 100 120 dB G = 1000 130 dB

(10 kHz) VCM = –10 V +10 V G = 1 80 dB G = 10 90 dB G = 100 100 dB G = 1000 100 dB

= √eNI

2 + (eNO/G)2

1 kHz eNI VIN+, VIN−, VREF = 0 8 nV/√Hz eNO 75 nV/√Hz

RTI f = 0.1 Hz 10 Hz G = 1 2 μV p-p G = 10 0.5 μV p-p G = 100 1000 0.25 μV p-p

f = 1 kHz 40 fA/√Hz f = 0.1 Hz 10 Hz 6 pA p-p

1 VOSI VS = ±5 V ±15 V 70 μV

T = −40°C +85°C 135 μV (TC) 0.9 μV/°C

VOSO VS = ±5 V ±15 V 600 μV T = −40°C +85°C 1.00 mV

(TC) 9 μV/°C (PSR) VS = ±2.3 V ±18 V

G = 1 90 100 dB G = 10 100 120 dB G = 100 120 140 dB G = 1000 120 140 dB

0.5 2 nA

T = −40°C +85°C 3 nA (TC) 3 pA/°C

0.3 1 nA T = −40°C +85°C 1.5 nA

(TC) 3 pA/°C

1 (RTI) VOS = (VOSI) + (VOSO/G)2 RG3 G = 14 85°C 125°C

AD8221

Rev. B | Page 6 of 24

ARM

RIN 20 kΩ IIN VIN+, VIN−, VREF = 0 50 60 μA

−VS +VS V 1 ± 0.0001 V/V VS = ±2.3 V ±18 V ±2.3 ±18 V 0.9 1 mA T = −40°C +85°C 1 1.2 mA

-3 dB G = 1 825 kHz G = 10 562 kHz G = 100 100 kHz G = 1000 14.7 kHz

0.01% 10 V G = 1 100 10 μs G = 1000 80 μs

0.001% 10 V G = 1 100 13 μs G = 1000 110 μs

G = 1 1.5 2 V/μs G = 5 100 2 2.5 V/μs

G = 1 + (49.4 kΩ/RG) 1 1000 V/V VOUT ± 10 V

G = 1 0.1 % G = 10 0.3 % G = 100 0.3 % G = 1000 0.3 %

VOUT = −10 V +10 V G = 1 10 RL = 10 kΩ 5 15 ppm G = 100 RL = 10 kΩ 7 20 ppm G = 1000 RL = 10 kΩ 10 50 ppm G = 1 100 RL = 2 kΩ 15 100 ppm

G = 1 3 10 ppm/°C G > 12 –50 ppm/°C

100||2 GΩ/pF 100||2 GΩ/pF

3 VS = ±2.3 V ±5 V –VS + 1.9 +VS − 1.1 V T = −40°C +85°C –VS + 2.0 +VS − 1.2 V VS = ±5 V ±18 V –VS + 1.9 +VS − 1.2 V T = −40°C +85°C –VS + 2.0 +VS − 1.2 V RL = 10 kΩ VS = ±2.3 V ±5 V –VS + 1.1 +VS − 1.2 V T = −40°C +85°C –VS + 1.4 +VS − 1.3 V VS = ±5 V ±18 V –VS + 1.2 +VS − 1.4 V T = −40°C +85°C –VS + 1.6 +VS − 1.5 V 18 mA

AD8221

Rev. B | Page 7 of 24

ARM

−40 +85 °C

4 −40 +125 °C 1 (RTI) VOS = (VOSI) + (VOSO/G)2 RG3 G = 14 85°C 125°C

AD8221

Rev. B | Page 8 of 24

3

±18 V 200 mW

( ) ±VS

±VS

−65°C +150°C 1 −40°C +125°C

4θJA

8 SOIC 4 JEDEC 121 °C/W 8 MSOP 4 JEDEC 135 °C/W

ESD

1 -40°C +85°C 85°C 125°C

ESD

ESDESD

AD8221

Rev. B | Page 9 of 24

T = 25°C VS = ±15 V RL = 10 kΩ

0

200

400

600

800

1000

UN

ITS

1200

1400

1600

0–50–100–150 50 100 150

CMR (μV/V) 0314

9-00

3

3. CMR (G = 1)

0

300

600

900

1200

1500

UN

ITS

1800

2100

2400

0–20–40–60 20 40 60

INPUT OFFSET VOLTAGE (μV) 0314

9-00

4

4.

0

500

1000

1500

2000

2500

3000

UN

ITS

0–0.5–1.0–1.5 0.5 1.0 1.5

INPUT BIAS CURRENT (nA) 0314

9-00

5

5.

0

500

1000

1500

2000

2500

3000

3500

UN

ITS

0–0.3–0.6–0.9 0.3 0.6 0.9

INPUT OFFSET CURRENT (nA) 0314

9-00

6

6.

–15

–10

–5

0

5

10

15

INP

UT

CO

MM

ON

-MO

DE

VO

LTA

GE

(V

)

–5 0–15 –10 5 10 15

OUTPUT VOLTAGE (V) 0314

9-00

7

VS = ±5V

VS = ±15V

7. (G = 1)

–15

–10

–5

0

5

10

15

INP

UT

CO

MM

ON

-MO

DE

VO

LTA

GE

(V

)

–5 0–15 –10 5 10 15

OUTPUT VOLTAGE (V) 0314

9-00

8

VS = ±5V

VS = ±15V

8. G = 100

AD8221

Rev. B | Page 10 of 24

0.40

0.45

0.50

0.55

0.60

0.65

INP

UT

BIA

S C

UR

RE

NT

(n

A) 0.70

0.75

0.80

–5 0–15 –10 5 10 15

COMMON-MODE VOLTAGE (V) 0314

9-00

9

VS = ±5V

VS = ±15V

9. IBIAS CMV

0

0.25

0.50

0.75

1.00

1.25

CH

AN

GE

IN IN

PU

T O

FF

SE

T V

OLT

AG

E (

μV

)

1.50

1.75

2.00

0.10.01 1 10

WARM-UP TIME (min) 0314

9-01

0

10.

–5

–4

–3

–2

–1

0

1

2

3

4

5

INP

UT

CU

RR

EN

T (

nA

)

–40 –20 0 20 40 60 80 100 120 140

TEMPERATURE (°C) 0314

9-01

1

INPUT BIAS CURRENT

VS = ±15V

INPUT OFFSET CURRENT

11.

20

40

60

80

100

120

PO

SIT

IVE

PS

RR

(d

B)

140

160

180

0.1 1 10 100 1k 10k 100k 1M

FREQUENCY (Hz) 0314

9-01

2

GAIN = 1

GAIN = 10

GAIN = 100

GAIN = 1000

GAIN = 1000

12. PSRR RTI (G = 1 1000)

20

40

60

80

100

120

NE

GA

TIV

E P

SR

R (

dB

)140

160

180

0.1 1 10 100 1k 10k 100k 1M

FREQUENCY (Hz) 0314

9-01

3

GAIN = 1

GAIN = 10

GAIN = 100

GAIN = 1000

13. PSRR RTI (G = 1 1000)

TO

TAL

DR

IFT

25°

C –

85°

C R

TI (

μV

)

10

100

1k

10k

100k

1k 10k10 100 100k 1M 10M

SOURCE RESISTANCE (Ω) 0314

9-01

4

BEST AVAILABLE FETINPUT IN-AMP GAIN = 1

BEST AVAILABLE FETINPUT IN-AMP GAIN = 1000

AD8221 GAIN = 1

AD8221 GAIN = 1000

14.

AD8221

Rev. B | Page 11 of 24

–30

–20

–10

0

10

20

30

40

50

60

70

100 1k 10k 100k 1M 10M

FREQUENCY (Hz)

GA

IN (

dB

)

0314

9-01

5

GAIN = 1000

GAIN = 100

GAIN = 10

GAIN = 1

15.

40

60

80

100

CM

RR

(d

B)

120

140

160

0.1 1 10 100 1k 10k 100k 1M

FREQUENCY (Hz) 0314

9-01

6

GAIN = 1000

GAIN = 100

GAIN = 10

GAIN = 1

16. CMRR (RTI)

40

60

80

100

CM

RR

(d

B)

120

140

160

0.1 1 10 100 1k 10k 100k 1M

FREQUENCY (Hz) 0314

9-01

7

GAIN = 1000

GAIN = 100

GAIN = 10

GAIN = 1

17. CMRR (RTI 1 kΩ )

–100

–80

–60

–40

–20

0

20

40

60

80

100

CM

R (

μV

/V)

–40 –20 0 20 40 60 80 100 120 140

TEMPERATURE (°C) 0314

9-01

8

18. CMR

–VS +0

+0.4

+0.8

+1.2

+1.6

+2.0

+2.4

–1.6

–2.0

–2.4

–1.2

–0.8

–0.4

+VS –0

INP

UT

VO

LTA

GE

LIM

IT (

V)

RE

FE

RR

ED

TO S

UP

PLY

VO

LTA

GE

S

SUPPLY VOLTAGE (±V)

50 10 15 20

0314

9-01

9

19. G = 1

–VS +0

+0.4

+0.8

+1.2

+1.6

+2.0

–1.6

–2.0

–1.2

–0.8

–0.4

+VS –0

OU

TP

UT

VO

LTA

GE

SW

ING

(V

)R

EF

ER

RE

DTO

SU

PP

LY V

OLT

AG

ES

SUPPLY VOLTAGE (±V)

5 10 0 15

0314

9-02

0

20

RL = 10kΩ

RL = 2kΩ

RL = 10kΩ

RL = 2kΩ

20. G = 1

AD8221

Rev. B | Page 12 of 24

OU

TP

UT

VO

LTA

GE

SW

ING

(V

p-p

)

0

20

10

30

LOAD RESISTANCE (Ω)

101 100 1k 10k

0314

9-02

1

VS = ±15V

21.

–VS +0

+1

+2

+3

–3

–2

–1

+VS –0

OU

TP

UT

VO

LTA

GE

SW

ING

(V

)R

EF

ER

RE

DTO

SU

PP

LY V

OLT

AG

ES

0 1 2 3 4 5 6 7 8 9 10 11 12

OUTPUT CURRENT (mA) 0314

9-02

2

SOURCING

SINKING

22. G = 1

–10 –8 –6 –4 –2 0 2 4 6 8 10

VS = ±15V

0314

9-02

3

ER

RO

R (

1pp

m/D

IV)

OUTPUT VOLTAGE (V)

23. G = 1 RL = 10 kΩ

VS = ±15V

0314

9-02

4

–10 –8 –6 –4 –2 0 2 4 6 8 10

ER

RO

R (

10p

pm

/DIV

)

OUTPUT VOLTAGE (V)

24. (G = 100 RL = 10 kΩ)

VS = ±15V

0314

9-02

5

–10 –8 –6 –4 –2 0 2 4 6 8 10

ER

RO

R (

100p

pm

/DIV

)

OUTPUT VOLTAGE (V)

25. G = 1000 RL = 10 kΩ

VO

LTA

GE

NO

ISE

RT

I (n

V/

Hz)

1

100

10

1k

1 10 100 1k 10k 100k

FREQUENCY (Hz) 0314

9-02

6GAIN = 1

GAIN = 1000BW LIMIT

GAIN = 10

GAIN = 100

GAIN = 1000

26. (G = 1 1000)

AD8221

Rev. B | Page 13 of 24

1s/DIV2μV/DIV 0314

9-02

7

27. 0.1 Hz 10 Hz RTI (G = 1)

1s/DIV0.1μV/DIV

0314

9-02

8

28. 0.1 Hz 10 Hz RTI (G = 1000)

CU

RR

EN

T N

OIS

E (

fA/

Hz)

10

100

1k

FREQUENCY (Hz)

101 100 1k 10k

0314

9-02

9

29.

1s/DIV5pA/DIV

0314

9-03

0

30. 0.1 Hz 10 Hz

0

5

10

15

20

25

30

OU

TP

UT

VO

LTA

GE

(V

p-p

)

FREQUENCY (Hz)

1k 100k10k 1M

0314

9-03

1

GAIN = 1 GAIN = 10, 100, 1000

VS = ±15V

31.

20μs/DIV

0.002%/DIV7.9μs TO 0.01%8.5μs TO 0.001%

5V/DIV03

149-

032

32. (G = 1 0.002%/ )

AD8221

Rev. B | Page 14 of 24

20μs/DIV

4.9μs TO 0.01%5.6μs TO 0.001%

5V/DIV

0314

9-03

3

0.002%/DIV

33. (G = 10 0.002%/ )

20μs/DIV

10.3μs TO 0.01%13.4μs TO 0.001%

5V/DIV

0314

9-03

4

0.002%/DIV

34. (G = 100 0.002%/ )

200μs/DIV

83μs TO 0.01%112μs TO 0.001%

5V/DIV

0314

9-03

5

0.002%/DIV

35. (G = 1000 0.002%/ )

4μs/DIV

20mV/DIV

0314

9-03

6

36. (G = 1 RL = 2 kΩ CL = 100 pF)

4μs/DIV

20mV/DIV

0314

9-03

7

37. (G = 10 RL = 2 kΩ CL = 100 pF)

10μs/DIV

20mV/DIV

0314

9-03

8

38. (G = 100 RL = 2 kΩ CL = 100 pF)

AD8221

Rev. B | Page 15 of 24

SE

TT

LIN

G T

IME

(μ

s)

1

100

10

1000

GAIN

1 10010 1000

0314

9-04

1

SETTLED TO 0.001%

SETTLED TO 0.01%

2

100μs/DIV

20mV/DIV

0314

9-03

9

41. ( 10 V)

39. (G = 1000 RL = 2 kΩ CL = 100 pF)

SE

TT

LIN

G T

IME

(μ

s)

0

10

5

15

OUTPUT VOLTAGE STEP SIZE (V)

5 10 0 15

0314

9-04

0

20

SETTLED TO 0.01%

SETTLED TO 0.001%

40. (G = 1)

AD8221

Rev. B | Page 16 of 24

C1 C2

+VS+VS

+IN–IN

–VS

–VS

10kΩ

10kΩ

10kΩ

400Ω 400Ω10kΩ REF

OUTPUT

IB COMPENSATIONIB COMPENSATION

+VS

–VS

+VS

–VS

+VS

VB II

R1 24.7kΩ 24.7kΩ

RG

Q1

R2

Q2

–VS

+VS

–VS

A2A1

A3

0314

9-04

2

42.

8

7

6

5

1

2

3

4

–IN

RG

RG

+VS

VOUT

REF

–VS+IN

TOP VIEW

AD8221

0314

9-04

3

43.

AD8221Q1 Q2A1 A2

RG R1 R2 A1 A2Q1 A1 R1 Q2

A2 R2

20 ppm CMRR90 dB (G = 1)

AD8221 Superbeta IB

IB IB IOS

(8 nV/√Hz)

AD8221

GRG

kΩ94 .41+ =

AD8221 -

AD8221

AD8221 10 kHz (G = 1) CMRR80 dB 1 kHz (G = 1000) CMMR 110 dB 43

CMRR

AD8221

Rev. B | Page 17 of 24

1kΩ94 .4−

=G

RG

5. 1%1% RG (Ω)

49.9 k 1.990 12.4 k 4.984 5.49 k 9.998 2.61 k 19.93 1.00 k 50.40 499 100.0 249 199.4 100 495.0 49.9 991.0

0314

9-04

4

44. AD8221-EVAL

0314

9-04

5

45. AD8221-EVAL

RG AD82215

AD8221 G = 1RG (TC)

RG

REFAD8221 46

AD8221

AD8221 (CMRR)( )

CMRR 200 HzAD8221

CMRR

AD8221

AD8221REF

ADC

PC

44 45

AD8221

Rev. B | Page 18 of 24

AD8221

+VS

+IN

–IN

LOADREF

0.1μF 10μF

0.1μF 10μF

–VS

VOUT

0314

9-04

6

46. REF

+VS

REF

TRANSFORMER

THERMOCOUPLE

–VS

AD8221

+VS

REF

–VS

AD8221

CAPACITOR COUPLED

+VS

REF

C

R

R

C

–VS

AD82211fHIGH-PASS = 2πRC

0314

9-04

7

47. IBIAS

42 REF 10 kΩREF

REFAD8221 ADC

REF +VS

–VS 0.5 V

REFCMRR

0.1 μF 4610 μF

AD8221

47

AD8221 1 kV ESD−VS

400 Ω+VS ESD

+VS

AD8221 6 mAI = VIN/REXT I = VIN/(400 Ω + REXT)

AD8221(

BAV199L FJH1100 SP720)

AD8221

Rev. B | Page 19 of 24

)1

CCDiff

CDFilterFreq

+=

CCM

RCFilterFreq

2π1

=

CD ≥ 10CC

R

R

AD8221

+15V

+IN

–IN

0.1μF 10μF

10μF0.1μF

REF

VOUT

–15V

R1499ΩCD

CC

CC

10nF

1nF

1nF

0314

9-04

8

4.02kΩ

4.02kΩ

48. (RFI)

+5V

+2.5V

0314

9-04

9

10μF 0.1μF

AD8221

+IN

–IN

R

350Ω

350Ω350Ω

350Ω

+

–

49.

+12V

+IN

–IN

0.1μF10μF

0.1μF10μF

–12V

R31kΩ

+2.5V

R41kΩ

REFR5

499ΩR2

10kΩ

R110kΩ

C1470pF

+12V

0.1μF

0.1μF

–12V

+12V

+5V +5V0.1μF

10nF

0.1μF–12V

+12V

0.1μF

0.1μF–12V

R627.4Ω

R727.4Ω

C2220μF

10μF 0.1μF 22μF

+5V2.5V

220nF 10nF

AD8221

AD8022

OP27

AD8022

AD7723

VIN(+)AVDD

AGND DGND REF1 REF2

DVDD

VIN(–)

AD780

GND

+VIN VOUT

0314

9-05

0

(½)

(½)

50. ADC

RFRF RF

RC48

+5 V ADC ±10 V±10 V

ADC ICADC

±10 V+5 V ADC

50

CD CC R CC

R × CC

AD8221 CMRR CD CC

AD822149

2πR(2

AD8221

Rev. B | Page 20 of 24

AD8221

OP1177

R15.8kΩ

+VS

+IN

–IN

0.1μF

0.1μF

0.1μF

0.1μF

10μF10μF

REF C1μF

–VS

–VS+VS

+VS

–VS

R499Ω

12πRC

fHIGH-PASS =

0314

9-05

1

51.

OP27 AD8221OUT REF 1 kΩ

499 Ω ±10 V +4 VC1 AD8022

ADC

R1 R2 ADCR5

1/3 R3R4

AD8221OP27 AD8221

AD8022ADC

ADC

518 nV/√Hz

100AD8221

OP1177 AD8221 0 VfHIGH-PASS AD8221

AD8221

Rev. B | Page 21 of 24

COMPLIANT TO JEDEC STANDARDS MO-187-AA

0.800.600.40

8°0°

4

8

1

5

PIN 10.65 BSC

SEATINGPLANE

0.380.22

1.10 MAX

3.203.002.80

COPLANARITY0.10

0.230.08

3.203.002.80

5.154.904.65

0.150.00

0.950.850.75

52. 8 [MSOP]

(RM-8)

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FORREFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

COMPLIANT TO JEDEC STANDARDS MS-012-AA

0124

07-A

0.25 (0.0098)0.17 (0.0067)

1.27 (0.0500)0.40 (0.0157)

0.50 (0.0196)0.25 (0.0099)

45°

8°0°

1.75 (0.0688)1.35 (0.0532)

SEATINGPLANE

0.25 (0.0098)0.10 (0.0040)

41

8 5

5.00 (0.1968)4.80 (0.1890)

4.00 (0.1574)3.80 (0.1497)

1.27 (0.0500)BSC

6.20 (0.2441)5.80 (0.2284)

0.51 (0.0201)0.31 (0.0122)

COPLANARITY0.10

53. 8 [SOIC_N]

(R-8) ( )

AD8221

Rev. B | Page 22 of 24

1

AD8221AR –40°C +85°C –40°C +125°C 8 SOIC_N R-8 AD8221AR-REEL –40°C +85°C –40°C +125°C 8 SOIC_N 13" R-8 AD8221AR-REEL7 –40°C +85°C –40°C +125°C 8 SOIC_N 7" R-8 AD8221ARZ2 –40°C +85°C –40°C +125°C 8 SOIC_N R-8 AD8221ARZ-R72 –40°C +85°C –40°C +125°C 8 SOIC_N 7" R-8 AD8221ARZ-RL2 –40°C +85°C –40°C +125°C 8 SOIC_N 13" R-8 AD8221ARM –40°C +85°C –40°C +125°C 8 MSOP RM-8 JLA AD8221ARM-REEL –40°C +85°C –40°C +125°C 8 MSOP 13" RM-8 JLA AD8221ARM REEL7 –40°C +85°C –40°C +125°C 8 MSOP 7" RM-8 JLA AD8221ARMZ2 –40°C +85°C –40°C +125°C 8 MSOP RM-8 JLA# AD8221ARMZ-R72 –40°C +85°C –40°C +125°C 8 MSOP 7" RM-8 JLA# AD8221ARMZ-RL2 –40°C +85°C –40°C +125°C 8 MSOP 13" RM-8 JLA# AD8221BR –40°C +85°C –40°C +125°C 8 SOIC_N R-8 AD8221BR-REEL –40°C +85°C –40°C +125°C 8 SOIC_N 13" R-8 AD8221BR-REEL7 –40°C +85°C –40°C +125°C 8 SOIC_N 7" R-8 AD8221-EVAL

1 85°C 125°C2 Z = RoHS # RoHS

AD8221

Rev. B | Page 23 of 24

AD8221

Rev. B | Page 24 of 24

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registered trademarks are the property of their respective owners.

D03149–0–9/07(B)