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TLP190B

2007-10-011

TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array

TLP190B

Telecommunication

Programmable Controllers

MOS Gate Driver

MOS FET Gate Driver

The TOSHIBA mini flat coupler TLP190B is a small outline coupler,

suitable for surface mount assembly.

The TLP190B consists of a GaAAs light emitting diode, optically

coupled to a series connected photo diode array which is suitable for

MOS FET gate drive.

Open voltage: 7.0V (min.)

Short current: 12.0A (min.)

Isolation voltage: 2500Vrms (min.)

UL recognized: UL1577, file no. E67349

Absolute Maximum Ratings (Ta = 25C)Characteristic Symbol Rating Unit

Forward current IF 50 mA

Forward currentderating (Ta 25C)

IF/ C 0.5 mA / C

Pulse forward current(100s pulse 100pps)

IFP 1 A

Reverse voltage VR 3 V

LED

Junction temperature Tj 125 C

Forward current IFD 50 A

Reverse voltage VRD 10 VDetector

Junction temperature Tj 125 C

Storage temperature range Tstg 55~125 C

Operating temperature range Topr 40~85 C

Lead soldering temperature (10 s) Tsol 260 C

Isolation voltage(AC, 1 min., R.H. 60%) (Note)

BVS 2500 Vrms

Pin Configuration (top view)

1. Anode

3. Cathode

4. Cathode

6. Anode

6

4

1

3

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).

(Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.

Unit in mm

TOSHIBA 114C1

Weight: 0.09 g

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Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Forward current IF 20 25 mA

Operating temperature Topr 25 85 C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of thedevice. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Individual Electrical Characteristics (Ta = 25C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF= 10 mA 1.2 1.4 1.7 V

Reverse current IR VR= 3 V 10 ALED

Capacitance CT V = 0, f = 1 MHz 30 60 pF

Forward voltage VFD IC= 10 A 7 V

Reverse current IRD VR= 10 V 1 nADetector

Capacitance(anode to cathode)

CTD V = 0, f = 1 MHz pF

Coupled Electrical Characteristics(Ta = 25C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

Open voltage VOC IF= 10 mA 7 8 V

Short current ISC IF= 10 mA 12 20 A

Isolation Characteristics (Ta = 25C)


Capacitance input to output CS VS= 0, f = 1 MHz 0.8 pF

Isolation resistance RS VS= 500 V, R.H. 60% 51010

1014

AC, 1 minute 2500

AC, 1 second in oil 5000 Vrms

Isolation voltage BVS

DC, 1 minute in oil 5000 Vdc

Switching Characteristics (Ta = 25C)


Turnon time tON 0.2 ms

Turnoff time tOFF

IF= 20 mA, RSH= 510 kCL= 1000pF (Fig. 1) 1 ms

Fig. 1 Switching time test circuit

VOUTIF

CLRSH

RSH : External shunt resistance

VOUT

IF

0V 1V

5V

tON tOFF

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IF Ta

Ambient temperature Ta (C)

Allowa

bleforwardcurr

en

t

IF

(mA)

100

00 10020 40 60 80

20

60

80

20

40

VF/Ta IF

Forward current IF (mA)

Forwardvo

ltage

tempera

ture

Coe

fficien

tVF/Ta

(mV

/C)

0.8

0.1 0.3 0.5 1 3 10 30

1.2

1.6

2.0

2.8

2.4

3.6

3.2

4.0

IF VF

Forward voltage VF (V)

Forw

ardcurren

t

IF

(mA)

100

11.0 1.2 1.4 1.6 1.8 2.0 2.2

3

5

10

30

50

Ta = 25 C

IFP DR

Duty cycle ratio DR

Pu

lse

forwardcurren

t

IFP

(mA)

1000

10

3

500

300

100

50

30

103

102

3 3 3101

100

3000

5000Pulse width 100s

Ta = 25 C

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ISC Ta


Shortcurren

t

ISC

(A)

VOC Ta


Openvo

ltage

VOC

(V)

VOC IF


Open

vo

ltage

VOC

(V)

10

01 100

tON,tOFF CL

Load capacitance CL (PF)

Sw

itc

hing

time

tON

,tOFF

(ms

)

100

0.01

300 3000

IO VO

Output voltage VO (V)

Ou

tpu

tcurren

t

IO

(

A)

0

ISC IF


Sho

rtcurren

t

ISC

(A)

100

Ta = 25 C

IF= 20 mA

40

20

0

20

40

602 4 6 8 10

Ta = 25 C

10mA

5mA

20mA

15mA

25mA

IF=0mA

8

6

4

2

3 5 10 30 50

Ta = 25 C

RSH=2.4M

300k

510k

1M

RSHOPEN

1 1003 5 10 30 500.1

0.3

0.5

1

3

10

30

50

Ta = 25 C

12

00 12020 40 60 8020 100

2

4

6

8

10

IF= 10mA

24

00 12020 40 60 8020 100

4

8

12

16

20

IF= 10mA

0.03

0.1

0.3

1

3

10

30

102 10

3 10

4

300k

510k

1M

2.4M

RSH=2.4MtOFF

tON1M

510k

300k

IF=20mAVOUT

CLRSH

IF

VOUT

0V5V

1V

tON tOFF

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RESTRICTIONS ON PRODUCT USE20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability

Handbook etc.

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customers own risk.

The products described in this document shall not be used or embedded to any downstream products of whichmanufacture, use and/or sale are prohibited under any applicable laws and regulations.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,

cut, crush or dissolve chemically.

Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

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