08 450 pavelka semilab

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Sem iconductorPhysicsLaboratoryCo.Ltd. 1

Semilab Technologies forSemilab Technologies for450mm Wafer Metrology450mm Wafer Metrology

Tibor Pavelka

Semilab Semiconductor PhysicsLaboratory Co. Ltd.


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OutlineOutline

Short introduction to Semilab

Technologies with potentialfor 450mm

Non-destructive, capable of in-

line process control

Contamination monitoring

Epi layer monitoring

Implant monitoring

Dielectric characterization

Metal layer characterization

Characterization of etchedstructures

Destructive / analytical tools


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Short IntroductionShort Introduction Semilab FactsSemilab Facts

Main activity: Development, manufacturing andmarketing of metrology equipment for thesemiconductor and photovoltaic industries.

Revenue exceeds $ 50 million (2008)

Employees: 258

worldwide, 152

in Hungary

Laboratory, office and manufacturing space: 11,000m2,

about 3,000 m2

in the US

76 physicists employed (43 in Hungary) 25 employees

holding a

Ph. D.

in physics

(5

in

Hungary)

Installed

base: more than 2,300 units

Patents: wholly owned

90, applications

8,

lincensed

41

Listed as 35th

among the 50 fastest growing Central-

East European

technology companies (Deloitte) in

2008


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History of SemilabHistory of Semilab


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History of the Semilab GroupHistory of the Semilab Group

1990

2004

2008

2008

2008

2009

2009


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Semilab around the WorldSemilab around the World



Semilab PeopleSemilab People

Hungary59%

UK

Germany1%

SingaporeChina

6%

Japan5%

France6%

USA23%

PhD10%

PhDstudents

3%

University/College

without PhD59%

Other28%

Administrative

11%

Engineers

35%Physicists29%

Manufacturing

& Assembly

24%

Others

1%

Semilab Worldwide Qualifications

Tasks



Semilab in European CooperationsSemilab in European Cooperations

Successful participation in theSEA-NET project

MetalMap: lifetime monitoring andmetal contamination measurementon bare wafers

Lead It: contactless sheet

resistance measurement viajunction photo-voltage technique

Member of the EEMI450

Participant in other projects underdevelopment or evaluation

Becoming an active player inEuropean cooperation



Contamination Monitoring I.Contamination Monitoring I. Lifetime Measurement (Lifetime Measurement (--PCD)PCD)

Minority chargecarrier lifetime:effective parameter

to characterize thepurity ofsemiconductormaterial

-PCD method:

simple, robust,powerful techniquefor lifetimemonitoring

Available in WT

wafer testers (frombench-top platformto fully automated300mm tool)

Possible applicationin 450mm lines

bulkThermal

equilibrium

Excitation

(generationof excess

chargecarriers)

Redistribution

of carriers

diffusion ofcarriers

to thesurface

surface

recombination

bulk

recombination

surfacediff

surfdiffbulkmeas

111

++=

S2

d

D

d

pn,

2

2

=

=

surf

diff

D: diffusion constantof minority carriersd: wafer thicknessS: Surface

recombination velocity

meas

: measured lifetimesurface

: surface recombination lifetimediff

: characteristic time for diffusion to thesurface from the bulk

bulk

: bulk recombination lifetime



Contamination Monitoring II.Contamination Monitoring II. SPVSPVDiffusion Length MeasurementDiffusion Length Measurement

Diffusion length: key parameter forsemiconductor characterization,especially for metal contaminationmonitoring

Fast, non-contact, non-destructivewhole wafer mapping

Measurement principle:

Excess charge carrier pairs aregenerated by laser pulse surfacephotovoltage appears

VSPV

~n, VSPV

: measured surfacephotovoltage, n: number of excesscharge carriers

Measurement with different lasers

The following equation is fulfilled:

: photon flux density

L: diffusion lengtjh

1/: penetration depth

1/ [m]1/(1) 1/(2)L [m]

VSPV

( )( )

1

1V

SPV

( )

( )

2

2V

SPV

SPV Plot

Integrated SPV Measuring Unit

ComputerSPVelectronics

Lock-indetection

Lasers

Capacitive sensor

Silicon wafer

Periodicexcitation

+=

1

LCVSPV



Epi Layer Monitoring I.Epi Layer Monitoring I. Dopant andDopant andResistivity Profiling by Airgap CVResistivity Profiling by Airgap CV

EPIMET

real-time,

non-contact, non-

destructiveproduction linecontrol for epiprocesses

No need for monitor

wafers

Pre-treatment isintegrated

Resistivity and dopantprofile plotting

Wafer mapping

Excellent repeatability(



Epi Layer Monitoring II.Epi Layer Monitoring II. SurfaceSurfaceCharge ProfilingCharge Profiling

Measurement of n/p,n/n, p/p, p/n epi even

over buried layers

Measures

Dopingconcentration

Resistivity Depletion layer width

Surfacerecombinationlifetime

Conductivity type

Based on highfrequency AC surfacephoto-voltage

Illumination

~~~~

Wd

VsW

d

h

e

h

Re

Rh

Dark

Bulk

p-type

h

High frequency surface photo-voltage

Low intensity:

Vs

< 0.05 kT/q

Wavelength < 400 nm

Vs

~Wd

~1/Csc

Wd-inv = (Nsc)



Epi Layer Monitoring III.Epi Layer Monitoring III. FastFastGateGate

Non-penetratingElastic Metal probe

for rapidmonitoring of epilayers

EM-probe: non-

destructive probefor capacitancemeasurements andIV-profiling

Small tip diameter

to enable sheetresistance profiling

CV profiling



Implant Monitoring I.Implant Monitoring I. CarrierCarrierIlluminationIllumination

In-line, non-contact,pre-anneal monitoringof

Implant Dose

PAI depth

Junction depth

BX-3000 Carrier

IlluminationTechnology

Generation lasercreates excesscarriers

Excess carriersgradient forms indexof refraction gradient

Probe laser reads outindex of refraction to

determine junctionproperties

Objective

lens

Generation

laser

(830 nm red)

Probe laser(980 nm IR)

Beam

splitter

Cognex

PatMax

Vision

system

Detector

Deep

Shallow

BX-10 Xj

measured

contour



Implant Monitoring II.Implant Monitoring II. JunctionJunctionPhotoPhoto--VoltageVoltage

Control the implant andanneal by measuring sheetresistance (Rs

) of the

implanted layer after anneal

LED generates chargecarriers which spreadlaterally

Spreading is detected

capacitively, Rs

is

calculated

Non-contact, non-

destructive

Fast, high resolution

mapping

Good repeatability

Good correlation withconventional techniques

Works from USJs to deepimplants

Si substrate

Junction+ ++

LED

Pickup electrodes

0

200

400

600

800

1000

0 200 400 600 800 1000

Sheetr.4pp[

Ohm/sq.]

JPV Sheet resistance [Ohm/sq.]

Vendor 1

Vendor 2



Dielectric Characterization I.Dielectric Characterization I. Spectroscopic EllipsometrySpectroscopic Ellipsometry

GES5E: R&D Spectroscopic Ellipsometer

to

meet requirements of emerging technologies

/

materials

Measures complex reflectance ratio

Parameters:

Spectral range:

from 190 nm to 2.5 m high resolution

and/or fast measurement mode

Unique combination with further

techniques:

Grazing X-Ray Reflectance

FT Infra-Red Spectroscopic Ellipsometry

up to

33 m

Adsorption, EPA: Ellipsometric

Porosimeter

(EP)at atmospheric pressure

( )Tknfer

r i

s

p,,tan ===

cos,tan

cos

tan

Wavelength



Dielectric Characterization II.Dielectric Characterization II. NonNon--Contact MOS CV (VQ) for SiOContact MOS CV (VQ) for SiO22 and Highand High--

Non-destructivemeasurement technique toreplace traditional C-Vmeasurements for qualifying

oxide or other dielectricalong with interfaceproperties

in silicon wafers

Measured parameters

Tox

: Electrical oxidethickness

Vfb

: Flatband

voltage

Dit

: Interface state density

Qm

: Mobile charge

Vox

: Oxide voltage

Qeff

: Effective charge

Etunnel

: Tunneling electric

field

Vs

: Surface potential

Vsurf

: Surface voltage

Vtunnel

: Tunnel voltage

Hight throughput: completeanalysis in 15 minutes

Corona discharge Kelvin Probe

Illumination

VQ curve Tox

map



Dielectric Characterization III.Dielectric Characterization III. Near FieldNear FieldScanning Microwave Microscope forScanning Microwave Microscope forLowLow--

Non-contact microwavetechnique to measure thedielectric constant of low-k

materials on productionwafers

Potential uniqueapplication: sidewalldamage monitoring

Near field antenna (10mtip size



LowLow-- and Metal Layer Characterizationand Metal Layer Characterization Surface Acoustic WaveSurface Acoustic Wave

Non-contact, non-

destructive tool toobtain

Layer thickness

Bilayer thickness

Material properties(resistivity, grain size)

Laser excitation

generates acousticwaves whichpropagate

Propagation ismonitored, waveformand spectrum isanalyzed

1. Dark signal before waveexcitation.

2. Wave excitation with stripedpattern.

3. Wave motion and diffractionof probe beam to detector. Waveform and frequencyspectrum.



Characterization of 3D Etched Structures andCharacterization of 3D Etched Structures and

ThrenchesThrenches Model Based Infrared ReflectometryModel Based Infrared Reflectometry

Thickness, depth,CD, and composition

can be determined

Sample is illuminatedby IR light

Reflections &absorptions from

trenches and filmsdetermine shape ofreflectance spectrum

Spectrum is analyzed

with a model of thesample structure,and parameters aredetermined by fittingthe model spectrum

Reflectance Spectrum

Interferencefringes

Absorpt ionbands

Exp. Data

Model Fit

Reflectanc

e

Wavenumber (cm-1)

Layers ofInterest

45Infrared

Light

1.4

20

micronswavelength

Detector


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Destructive / Analytical ToolsDestructive / Analytical Tools

Potential for 450 mm

DLTS: Deep Level

TransientSpectroscopy forcontamination analysis

LST: Light Scattering

Tomography for bulkmicrodefectcharacterization

SIRM: ScanningInfrared Microscopy forbulk defectcharacterization

SRP: Sheet ResistanceProfiling

08 450 pavelka semilab

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