05 bjt basics
TRANSCRIPT
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05 Bipolar Junction Transistors (BJTs) basics
There are two types of bipolar transistors: the NPN transistor, in which aP-type region is sandwiched between two N-type regions, and the PNP
transistor, where N-type silicon is confined between two P-type regions.
Emitter Base Collector
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Long-base device
If the width of the neutral base, is large enough, all the electrons injected by the emitter into
the base recombine in the P-type material, because the base width is larger than the electron
diffusion length in the base. There is no interaction between both junctions and therefore no
current flowing between emitter and collector. Neglecting the small reverse current in the
collector-base junction, the only current flowing through the device is between the base andthe emitter:
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Short-base device
The term "short base" implies that the neutral base width is smaller than the electron
diffusion length: WB < LnBLet the emitter-base junction be forward biased VBE = VB VE > 0
and the collector-base junction be reverse biased VBC = VB VC
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WB
In modern BJTs 99% or more of the electrons injected by the emitter into the basereach the collector.
The magnitude of current flowing in the collector does not depend on magnitude of
the collector voltage; the collector-base junction simply needs to be reverse biased.
This effect, in which the current in a junction is controlled by the bias applied to
another junction, is called "transistor effect".
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Symbolic representation, applied bias, and currents
in an NPN bipolar transistor.
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A BJT transistor with a forward-biased emitter-base junction and a reverse-biased
collector-base junction is said to operate in theforward active mode. If both junctions are forward biased the transistor is said to be insaturation. In that
case electrons are injected from the emitter through the base into the collector and
from the collector through the base into the emitter.
If both junctions are reverse biased there is no current flow at all and the device is
in thecut-off mode.
If the emitter junction is reverse biased and the collector junction is forward
biased the transistor operates in thereverse active mode.
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BJT Current gain
The current flowing through the emitter junction is given by the sum of the holecurrent injected from the base into the emitter and the electron current injected from
the emitter into the base . The ratio between these two current components
where NaB and NdE are the doping concentrations in the base and the emitter, respectively
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05 Bipolar Junction Transistors (BJTs) basics
BJT circuit configurations
Common-base
configuration
Common-emitter
configuration
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BJT Currents
The collector current, InC is due to the diffusion through the base of electrons injectedby the emitter into the base.
InC = InE IrB,
where IrB is the current due to the recombination of electrons in the base.
The base current is equal to IpE + IrB;
For the convention for
current direction as shown
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Common base gain,F
or,
BJT Current Gain
Common emitter gain,F
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BJT fabrication
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Amplification using a bipolar transistor
For typical Si BJT in the forward active mode,
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Amplification using a bipolar transistor
( ) x IC =
power supplied
by the power
supply
power dissipated
in the load
resistor
power loss
(the price one has to
pay to obtain
amplification by the
transistor.
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05 Bipolar Junction Transistors (BJTs) basics
Ebers-Moll model
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Ebers-Moll model
05 Bi l J ti T i t (BJT ) b i
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05 Bipolar Junction Transistors (BJTs) basics
Ebers-Moll model
A is the area of the cross section
05 Bi l J ti T i t (BJT ) b i
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Ebers-Moll model
Defining the emitter and the collector junctions
reverse saturation currents
05 Bi l J ti T i t (BJT ) b i
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Ebers-Moll model
Combining these expressions the Ebers-Moll Equations are
or, in the matrix form:
05 Bipolar Junction Transistors (BJTs) basics
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Ebers-Moll model
05 Bipolar Junction Transistors (BJTs) basics
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Emitter efficiency
05 Bipolar Junction Transistors (BJTs) basics
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Transport factor in the base