ý Ê É þ Ä u i x - compound semiconductor2011-2015 hgaas < Ê,xjÔ 9 Ú ¹6%,x á Ü h rks)[...

GaAs

2011-2015 GaAs

6%

LED

RF

2013

AlGaN/GaN HEMT

200mm

CMOS AlGaN/GaN

SiC GaN

, SiC

GaN

GaAs

II-VI

536nm

InGaAs

MOSFET

2012 11

www.compoundsemiconductorchina.net

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AIX G5+

Anzeige_G5_5x8inch__210x297.indd 1 30.07.12 14:35

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1www.compoundsemiconductorchina.net 2012 11

A LEADING SUPPLIER OF PLASMA PROCESS EQUIPMENT

Advanced RIE, CVD, ICPfor Research & Production

[email protected]

+1 727 577 4999

Plasma-Therm

PTI_2_12 full pg Magnifying ad.indd 1 2/14/2012 5:09:15 PM

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2 www.compoundsemiconductorchina.net 2012 11

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Cover Story

Boosting battery life

- Chris Novak RFMD 3G/4G

Technology200mm CMOS AlGaN/GaN

Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200mm Si substratesGaN HEMT ( )

GaN HEMT GaN HEMT Imec

200 mm GaN CMOS 200mm CMOS

GaN HEMT- Brice De Jaeger, Marleen Van Hove, Stefaan Decoutere; Imec

: SiC GaNSiC and GaN electronics: Where, when and how big?

SiC 30 GaNLED

GaAsGaN

SiC- Richard Eden, IHS IMS Research

HEMTEuropean efforts propel nitride devices to a new level

HEMTGaN AlGaN

InAlN AlGaN

GaN HEMT GaNMORGaN

- Sylvain Delage, III-V Lab

Lifting limitations in photovoltaics

MicroLink Devices(epitaxial lift-off technique) GaAs

1-3- Richard Stevenson

18

22

25

29

35

Contents2012 11

www.laytec.de

LayTec

[email protected]

LayTec AGBerlin, GermanyEmail: [email protected]

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4 www.compoundsemiconductorchina.net 2012 11

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ACT 1998 ACT ACT

/ / LED / ACT ACT

www.actintl.com.hk

About ACT International Media Group ACT International, established 1998, serves a wide range of high technology sectors in the high-growth China market. Through its range of products -- including magazines and online publishing, conferences and events -- ACT delivers proven access to the China market for international marketing companies and local enterprises. ACT's portfolio includes ten technical magazine titles and related websites plus a range of conferences serving more than 100,000 professional readers in �elds of semiconductor manufacturing, compound semiconductor, PV/solar energy, electronic design, electronic manufacturing, contamination control, laser/photonics, optical communications, LED technology and RF/microwave. ACT International is also the sales representative for a number of world leading technical publishers and event organizers. ACT is headquartered in Hong Kong and operates liaison of�ces in Beijing, Shanghai and Shenzhen. www.actintl.com.hk

(CSC) Compound Semiconductor

About Compound Semiconductor ChinaCompound Semiconductor China (CSC) is the sister title to Compound Semiconductor - the world's most respected and authoritative publication. It is also the unique and authoritative publication dedicated to the Compound Semiconductor industry in China, introduce advanced global technology information and manufacturing experience, support the growth of the industry in the China market. Our content covers the technology development of crystal characteristic, design of IC structure, and materials, equipment, software, metrology, facilities for manufacturing, as well as market analysis & trends.

Editorial

Industry News

Advertisement Index

14

17

38

39

40

41

42

43

744

6

2012 11 Contents

Market GaAs

Shifting landscapes in the GaAs industry- Richard Stevenson

RF 2013RF-embedded light bulbs lighting market in 2013- Phillip Maddocks, Market Analyst, Connectivity, IHS IMS Research

Research ReviewII-VI

Output power rockets for green II-VI lasers

Powerful QCLs stretch to shorter wavelengths

LEDA watertight explanation for LED droop?

InGaAsInGaAs nanowire transistors outstrip silicon

VCSELViolet VCSELs poised for action?

US researchers claim world's smallest laser

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| Editor's Note

SiC GaN

SiC 30

GaN

LED SiC

2001 SiC SiC

SiC

SiC GaN

GaN

GaAs

GaN

SiC

SiC GaN

(MOSFET)

(IGBT)

SiC GaN SiC

GaN

SiC

GaN

SiC GaN

SiC

(1700V 2.5kV 3.3kV 4.5kV ) GaN

1200V

SiC GaN

25 IHS IMS Research Richard Eden :

SiC GaN

Publisher Adonis Mak

[email protected]

Editor in Chief Sunnie Zhao

[email protected]

Editor Jerry Zhu

[email protected]

Publishing House ACT International B,13/F, Por Yen Bldg,

478 478 Castle Peak Road, Cheung Sha Wan,

13 B Kowloon, Hong KongTel: (852) 2838 6298Fax: (852) 2838 2766

BeijingTel/Fax: 86 10 64187252

ShanghaiTel: 86 21 62511200Fax: 86 21 52410030

ShenzhenTel: 86 755 25988571Fax: 86 755 25988567

UK Of�ceAngel Business

Communications Ltd.6 Bow Court,

Fletchworth Gate,Burnsall Road, Coventry,

CV56SP, UKTel: +44 (0)1923 690200Chief Operating Of�cer

Stephen [email protected]

Tel: +44 (0)2476 718970

© 2012

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| Industry News

www.compoundsemiconductorchina.net 2012 11 7

2020 LED2020

LED 2016 LED 200lm/W

LED LED

LED 2015

2016 2020 240 2011 2012 LED

66%

10 23

(IC China 2012)

12

2004 8

1984

LEDLED MOCVD 200 (

)

(MOCVD) LED

MOCVD

30mW 50mW

PL 520

515 - 530nm 50mW

5% 6% PL 520 510 - 530nm 30mW

3.8mm

MOLAS 2010

Karl-Heinz-Beckurts

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| Industry News

2012 11 www.compoundsemiconductorchina.net10

150 4H N150 4H N

150 150

100 150

Vijay Balakrishna 100 150

150

thinQ!TM SiC650V thinQ!TM SiC SiC

Qc x Vf SiC 30%

thinQ!TM PFC

PC UPS

/

650V( 600V) CoolMOSTM

NanoCalc NanoCalc

NanoCalc (1.0nm-250μm) 4 (

~200-1700nm) (400-850nm)

(250-1050nm) NanoCalc

Si-SiO2 10

NanoCalc

NanoCalc

OLED NanoCalc

TriQuint Richardson RFPDTriQuint Richardson RFPD Richardson RFPD (Tech Hub)

TriQuint TriQuint GaN

TriQuint 1999 2008

TriQuint 0.25 (GaN on SiC)

TriQuint 18GHz MMIC

Richardson RFPD TriQuint TriQuint

HPA ;

TriQuint 55W 3.5GHz 40W 6GHz 20W 12GHz 10W

18GHz

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| Industry News


( )

Primo SSC AD-RIE

2x 1x (

) Primo SSC AD-RIE

12 Primo TSV300E® 8 Primo TSV200E®

8 Primo TSV200E®

2.5D MEMS Primo TSV300E®

Solar Junction 44%Solar Junction ,

947 44% 2011 4 418 43.5%

(NREL)

Solar Junction A-SLAMTM

Solar Junction

Solar Junction IQE Solar Junction SJ3TM

SUNPATH Solar Junction 6 2013

MORITEX LED CompaVisTM

MORITEX CompaVisTM

LED 40 6

CompaVisTM LED MORITEX

CompaVisTM CompaVisTM

BluGlass RPCVDBluGlass RPCVD MOCVD

RPCVD RPCVD

RPCVD

BluGlass RPCVD

1x1017 BluGlass

MOCVD

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| Industry News


HexaTech Tokuyama UV-C LEDHexaTech Tokuyama UV-C LED

LED UV-C LED

HexaTech Tokuyama (internal quantum ef�ciency)

UV-C LED

HexaTech Tokuyama Tokuyama

265nm 25mW UV-C LED 70%

Intematix RubyIntematix LED

LCD Ruby

LED

Intematix 8 274 215 Intematix Yi-Qun Li

LED

LED LED Intematix

GAL 98CRI 100 lm/W

imec10 imec

(GaN-on-Si)

imec 200mm Imec

2011 imec 200 mm 200 mm

imec CMOS

Azzurro Epistar 150mmAzzurro Epistar Epistar LED Azzurro 150mm

LED

Azzurro LED LED

LED ( 4nm )

150mm LED

Bridgelux 200mm 200mm

CMOS

ANADIGICS GaNANADIGICS, Inc. ACA2428 MMIC GaN ANADIGICS

1 GHz CATV ANADIGICS GaN

CATV

GaN ACA2428

ACA2428 GaN MMIC +58 dBmV 1 GHz 21 dB

50-1000 MHz

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| Market


CS Mantech

4 23-26

GaAs

GaAs

Strategy

Analytics Newton Eric Higham

GaAs 2010

35% 50 2000 GaAs

2008

GaAs 2000

GaAs

Higham 2011

GaAs (CS Mantech) GaAs

BiHEMT HBT pHEMTRichard Stevenson

| Market

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| Market


19.1

16.3

168.2

4.1

4

3.6

3.3

2.4

2.3

20.8

Skyworks

RFMD

TriQuint

Avago Technologies

WIN

Anadigics

Hi�te

Sumitomo

M/A -COM

Mitsubish Elelectric

Others

1: Strategy Analyt ics : 2010 GaAsSkyworks RFMD TriQuint 50% 54.5

52 2015 GaAs

6%

RFMD Skyworks

GaAs Strategy Analytics

Skyworks 2008

Higham

2010

Skyworks 19.1% RFMD 16.3%(

1) (2011 )

Skyworks 22% TriQuint

15.1% RFMD RFMD

(Greensboro)

12.4% Higham

2011 WIN Semiconductors

6

2010 2011

68%

Higham 2011

80% 40%

Higham

2014 2015

GaAs

Higham

0.25W 10W

40W 80W

LDMOS

Higham GaAs

Skyworks David Aldrich CS

Mantech Hignam

GaAs

: 2G GaAs

1 GaAs

10 Aldrich

RF 15%

Aldrich

Aldrich Prismark Partners

3G

(PA) 8 13%

16%

Aldrich PA

Skyworks

17

RF

200 mW 500mW

3G/4G

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| Market


(Turbo-charging transistors)WIN Semiconductors CS

Mantech

PA InGaP/GaAs HBT

pHEMT LTE Bi-

HEMT

WIN Semiconductors PA

3G WCDMA/HSPA 4G LTE

2G GSM 2.5G GPRS/

EDGE HBT

WIN HBT

SiN

-

( 2)

50% - 360

10:1 -

3.6 V

HBT 7.5 V 5V

3GHz

BiHEMTWIN BiHEMT pHEMT HBT

PA

PA

BiHEMT H2W

BiHEMT pHEMT

PA

H2W 4G LTE

WIN

H2W BiHEMT

HBT4

pHEMT

HBT SiN

BiHEMT HBT 1.27V

130 DC 28V 14V

- -

pHEMT 0.95 mm

H2W 50% RF

WIN 9 m x 125 m

0.1 dB

H2W 0.05 dB

pHEMTpHEMT

GaAs

GaAs

pHEMT

pHEMT

WiFi

pHEMT 77GHz

SiGe

pHEMT

HBT

2 WIN -HBT HBT

HBT

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| Market


2 013

RF

2012

IMS Research -2012

(Connectivity Opportunities in Lighting Controls – 2012

Edition) RF

2013 60 2017 1170

IMS Research

-2012

2010 2017

(

EMEA)

CFL

RF LED RF

CFL RF LED

Greenwave Reality Insteon LiFX IMS Research

RF 2013

40 2017 9

RF LED CFL

( RF )

LED

LED

CFL LED

2013 LED

23% CFL 215%

2017

app

RF

RF

Insteon 802.15.4

Greenwave Reality NXP JenNet-IP

NXP JenNet-IP

ZigBee® (ZigBee® Alliance)

LED -ZigBee Light Link

IMS Research

2012 2013

ZigBee

RF 2013

1. RF

2. RF

Phillip Maddocks, Market Analyst, Connectivity, IHS IMS Research

Source: IMS tcOhcraeseR -12

2010 2011 2012 2013 2014 2015 2016 2017

RF-Embedded LightBulbs

RF-Embedded LightBulb Controllers

Source: IMS tcOhcraeseR -12

2010 2011 2012 2013 2014 2015 2016 2017

Insteon

JenNet/JenNet-IP

ZigBee

Wi-Fi

Proprietary &Others

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| COVER STORY –

www.compoundsemiconductorchina.net18 2012 11

RFMD 3G/4GChris Novak

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| COVER STORY –


Cisco

2016

80%

RF

RF

OFDM

-

1

RF

-

36

695MHz 3800MHz

RF

LAN(WiFi)

RF

-

PAR 2

PA 3

PAR PA

:

RF

1:

2: (PA R)

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| COVER STORY –


PA

-

PA PA

PA

EER

RF Micro Devices EER

(ET) RF

4

RF

RF

1)

PA

2)

Doherty

APT

PA

PA DC-DC

PA

5

ET 5

- PA

33:

(PAE)PAR

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| COVER STORY –


4: (PAE)

5: RF PA PA (DC-DC )

PAR

DC-DC

PA ET

DC-DC

ET

PA

PA ET

DC-DC

APT PA

RF

PAR ET

PA

device

scaling

RF

RF

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| Technology – HEMT

22 2012 11 www.compoundsemiconductorchina.net

200 mm CMOS GaN HEMT

GaN HEMT

GaN HEMT

GaN HEMT

200mm CMOS

GaN

200mm

GaN

CMOS

200mm AlGaN/GaN HEMT

CMOS

GaN HEMT

Imec

Imec

GaN

200mm - AlGaN/GaN

4 6

MOVPE [1]

200 mm 111 AlGaN

AlGaN/GaN/

AlGaN

200 nm AlN

400 nm Al0.75Ga0.25N 400 nm

Al0.50Ga0.50N 1800 nm Al0.25Ga0.75N 150 nm GaN

10 nm Al0.25Ga0.75N

2 nm GaN

AlGaN

GaN 750 120nm

LPCVD Si3N4

200 mm

2DEG 18

Van-der-Pauw

2DEG Rsh 360�/sq

1 5% 48

200 mm CMOS AlGaN/GaN

GaN HEMT GaN HEMT Imec 200 mm

GaN CMOS 200mm CMOS GaN HEMT

1: CMOS 200mm

GaN

Brice De Jaeger, Marleen Van Hove, Stefaan Decoutere; Imec

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23 2012 11www.compoundsemiconductorchina.net

24

2DEG nS ~ 8.9e12 cm-2

μS ~1950 cm2V-1s-1

3 μm AlGaN/GaN/

AlGaN 1.15mm

0.725 mm

<= 50 μm

200 mm CMOS HEMT 1.15 mm

-35 5 μm

p

GaN

1e11 at/cm2

GaN AlGaN

10e11 at/cm2 200 Cl

2: 200mm 18

AlGaN/GaN 2DEG

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GaCl3

1e11 at/cm2

HEMT GaN /

/

CMOS

1.0 �mm

AlGaN

BCl3/SF6

5nm AlGaN 1.25

0.15 �mm

4 �mm

20/100/20/60 nm / / /

N2 550 90s

AlGaN/GaN MISHEMT 200 mm GaN

AlGaN/GaN HEMT

60 mm

d-mode

e-mode e-mode

GaN

e-mode AlGaN/GaN

HEMT (MISHEMT)

e-mode MISHEMT AlGaN

e-mode

Al0.25Ga0.75N

BCl3 BCl3 0s

30s 60s 0nm

5nm 10nm BCl3

200 mm

Vth 1.0 V 0.2 V

MISHEMT

AlGaN

Schottky

15nm ALD

Al2O3 600V

5nm 650 LPCVD Si3N4

10nm ALD Al2O3 600V

Si3N4/Al2O3

[2] /

43

4: SEM -

- 8 μm

Si3N4.-

T

5: 200mm G a N

MISHEMT

3:

60s

ID-VGS

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| Technology -


SiC

30 GaN

LED

SiC 2001 SiC

SiC

SiC

SiC

GaN

GaAs

GaN

SiC

IMS Research

SiC GaN

(PFC) (UPS)

PV

SiC GaN

(MOSFET) (IGBT)

SiC GaN

SiC GaN

SiC

GaN

SiC GaN

SiC (1700V

2.5kV 3.3kV 4.5kV )

GaN

1200V

(PFC)

GaN

600V 650V

GaN

SiC

: SiC GaN

IMS Research( IHS ) Richard Eden

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| Technology -


S i C

PFC 1200V

SiC

PFC

(PSU) SiC GaN

0.1%-1%

PSU

SiC

GaN

SiC GaN

UPS SiC

SiC GaN UPS

SiC GaN 5.1kVA

UPS SiC 5.1kVA

250kVA UPS

(HEV)

SiC

(IGBT)

SiC

SiC

SiC

SiC (JFET)

SiC (BJT)

GaN

SiC

GaN

SiC GaN

SiC

SiC

SiC

SiC

SiC

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| Technology -


2015

IE3 ( ) IE2

( )

IE2

IE2

IE3

SiC

SiC

GaN

SiC

SiC GaN

SiC GaN

0.5

SiC

SiC

SiC

600V SiC

GaN

5kW

GaN

600V (MOSFET) SiC

5kW SiC

900V 1200V

(IGBT) SiC

1200V

SiC

IGBT

1%

$1.5/

MW-h $1.5/MW-h SiC

SiC

SiC

30A

IGBT 100-150A

SiC

SiC

SiC

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| Technology -



1700V

690V

SiC

24

690V

1700V

6.5kV

60

1200-1400A SiC

SiC

SiC

1%

SiC

SiC

34

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| Technology - GaN


HEMT

GaN AlGaN

InAlN AlGaN

InAlN

InAlN/GaN

Al0.25Ga0.75N/GaN

3

GaN MORGaN

2008 11

9,200,000

13, 000,000

11 23

1

GaN/InAlN

MORGaN UltraGaN

2005

InAlN/GaN

InAlN/GaN

MORGaN

/

GaN

MORGaN

2 /

GaN HEMT

3.5GHz 6.6W/mm

70% InAlN/GaN HEMT

MORGaN

MORGaN

InAlN HEMT

700

bar

MORGaN

PH PH

HEMT

GaN HEMT GaNMORGaN

III-V Sylvain Delage

1: MORGaN

11 23

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| Technology - GaN


MORGaN

2 /

HEMT

GaN

GaN

InAlN/GaN HEMT

20GHz

500 Wm-1K-1

3.5GHz InAlN/

GaN HEMT 3.5GHz

6.6W/mm 70%

320W

(800 )

Element Six

GaN

4mm 4mm

Element Six

2

70μm 2μm

(111 )

( 100mm) 2

1000 Wm-1K-1

Bath

(111)/

AlN GaN GaN

350nm( 2)

EPEL CH FORTH

RF MBE

AlN 800nm GaN

GaN

HEMT

24nm Al0.28Ga0.72N 2nm

GaN ( 3)

731cm2V-1s-1

1.3x1013cm-2 770K

1740 2:

(111)(SEM )

3: (a) ( ) HEMT , (b) ( ) HEMT , (c) ( ) 1 m2x0.2x75 m3 HEMT (h21) (MSG/MAG) Vds=10V Vgs=-2.5 V

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| Technology - GaN


cm2V-1s-1 1.4x1013cm-2

Rth 3.5K mm W-1 4H SiC

HEMT 2

Ulm

0.2 m ( 3b)

ft 21GHz fmax

42GHz( 3c) SiC

AlGaN/GaN

MORGaN

ELOG Bath

5 m

500 m 6 m

15 m

9 m (

)

SiN

double dogleg

ELOG

Bath Joseph

Fourier

( 4)

IEE Slovak

800

60bar

0.02%/bar

MORGaN

400

80bar

MicroGaN

AlGaN/GaN

Wheatstone

( 5)

300

4: HEMT

80 ba r

5: GaN

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| Technology - GaN


pHMORGaN Ulm

(FET)

AlInN/GaN HEMT

AlInN/GaN HEMT

800

FET

Cu/Au PCB

Gwent Electronic Materials

PCB 48

( 6a)

55mV/

pH PH pH 20

mA/mm ( 6b) 0.05pH

GaN HEMT

700

HEMT

Ulm

1 m

HEMT

ft 16.8GHz fmax

6.4GHz( 7) MORGaN

HEMT1kW MORGaN

III-V

SiC 36mm

0.7 m HEMT ( 8)

SiC 2 m

GaN 10 m InAlN

6: (a) InAlN/

, (b)InAlN/

pH

7: 1 m

2x0.5x75 m3

HEMT(h21) (MSG/

MAG)

Vds=8V Vgs=-1V

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| Technology - GaN


10 s

2mm

13.2Wmm-1 (PAE)

70%

(PAE) 55%

Element Six

( 9)

SiC

100 m SiC

450Wm-1K-1

36mm

62

3.5 Wmm-1

173 ( 9b)

400 m

214

III-V Swerea IVF

FCubic

( 10) MORGaN

0.16 W-1

HEMT

2GHz 36mm

200W

250W

InAlN/GaN

320W

PAE 35%

8: (a) L S36mm

0.7 m HEMT( S E M

) (b) Pout = 41.2dBm (13.2W – 6.6 W/m m)

PA E 70%3.5GHz Vds=35V

Gp13.4dB ( 2mm

)

9: (a)100 m SiC

TM180 ()

36mm InAlN/GaN HEMT

C W3.5 W mm-1

62(b) (a)

(c) SiC400 m

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| Technology - GaN


PAE 55%

MORGaN

HEMT

MORGaN

MORGaN http://www.morganproject.eu

Europe turns to AlInN to push the limits of

transistor and sensor performance, Compound

Semiconductor Nov&Dec 2009, p.27

28

SiC

SiC

SiC

GaN

SiC

SiC

MOSFET 1200V

CMOSFET SiC

5-10

/

GaN

MOSFET

- GaN

48V

12V 48V

LED

GaN

GaN MOSFET

/

600V GaN

GaN

GaN

GaN

SiC GaN

1%

2021 30

9%

10: (a), (b)

200W L InAlN/GaN HEMT , (c) 36mm

2GHzPAE

10 s CW

: ; : PAE

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| Technology -


MicroLink

Devices

2000

MOCVD

1-3

1cm2

(AM0) 31% (AM1.5)

33.9% 20cm2

1%

(UAV)

US Air Force Research

Laboratory

(GaAs)

MOCVD

Chris Youtsey

Youtsey

10 GaAs

100

MicroLinkepitaxial lift-off technique GaAs

Richard Stevenson

1: GaAs

5 AlAs

2:

GaAs

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| Technology -


1978 Tokyo

Institute of Technology

peeled film

GaAs 80 90

Bell Communications Research

Eli Yablonovitch AlAs GaAs

15

Radboud University John Schermer

Youtsey

GaAs TriQuint

2011

1400 4

1500 Youtsey

MOCVD

InGaP GaAs InGaAs

5

AlAs

AlAs GaAs 105

12

GaAs

National Renewable

Energy Laboratory

InGaAs 0.9eV 1.1eV

1.42eV GaAs

3: GaAs AlAs GaAs

4: 4

2 20cm2

5:

6 GaAs 61cm2

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| Technology -


1.88eV 2.00eV Al InGaP

Youtsey

25

1cm2

Youtsey

InGaP GaAs

InGaAs

Glenn NASA Glenn

AM0 1cm2 20cm2

29%

30

400W/kg

Youtsey 150

Youtsey

6 GaAs

61cm2

Youtsey

Youtsey

InP

InP

InP GaAs

CHINASSL2012 LEDLED CHINASSL2012

CHINASSL2012 11 5-7 7 LED

· LED

Megaman Samsung

LED

· LED

CHINASSL2012 !

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| Research Review


(Be)

II-VI

(Hitachi)

(AIST)

70mW

Sony 2010 545nm

1.5mW

InGaN Be

AIST Ryouichi Akimoto

InGaN

- -

530nm

InGaN

In

Nichia( )

510-520 nm

GaN

c Sumitomo

GaN

530 nm

GaN

GaAs [

Be

] II-VI

InGaN

, Akimoto

90 GaN

II-VI

500

Akimoto

1990 ZnSe

Be

Akimoto : 2000

II-VI

536 nm

p

Ti/Pt/Au

AuGe/Ni/Au

800 μm 7 nm

BeZnCdSe

2 μm

90% 25

CW

55 mA 9.8 V

118 mA 50 mW

70%

70 mW

Akimoto

p

p

5 V

Akimoto

50 mW

2000 5V

1 kA cm-2

Akimoto

p

BeZnCdSe

S. Fujisaki et al. Appl. Phys. Express 5

062101 (2012)

II-VI

536nm

Hitachi AIST 536nm 70mW

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| Research Review


(Northwestern University)

(QCL, Quantum Cascade

Laser)

(Corning) 2011 40 mW

3.55 μm

InP AlInAs/GaInAs

3.39 μm

504 mW 3.56 μm 576 mW

- 3.3 – 3.6 μm

ManijehRazeghi

, 3.0 – 3.5 μm

3 μm

(Interband Cascade Laser)

Razeghi

InAs/AlSb/InAs

GaInAs/AlAs(Sb)/InP GaInAs/AlInAs/InP Razeghi

Sb InP Razeghi

Sb

3 μm

GaInAs/AlInAs InP

505-520 meV

6 μm

InAs GaInAs AlAs AlInAs

InP

InAs AlAs (

) Razeghi

1 eV

3.39 μm 8.6 μm 5

mm 100 kHz 500 ns

1.1 W 15 25

55 504 mW 403 mW 88 mW

3.56 μm 10.5 μm

1.66 W

15 25 55

576 mW 437 mW 45 mW

Razeghi

Razeghi

N. Bandyopadhyay et al. Appl. Phys. Lett. 100 212104 (2012)

500 mW 3.4 μm

ManijehRazeghi InP

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| Research Review


LED

(Rensselaer Polytechnic

Institute, RPI)Fred Schubert LED

LED

( LED

)

Schubert

GaN AlGaInP

, Schubert

LED

(Auger

Recombination)

Schubert

10-31cm6s-1

, Schubert

p

LED

p-n

GaN

p

LED

Schubert ,

: ( 1)

InGaN led

LED - ( 2)

LED

448 nm 451 nm

ABC

Schubert

G.-B Lin et. al. Appl. Phys. Lett. 100 161106 (2012)

LED

1 InGaN LED

exp(-hv/kT)

2 ABCSchubert

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| Research Review


InGaAs

MOSFET

Compound Semiconductor

III-V

MOSFET

FinFET

Intel IBM

Hokkaido

KatushiroTomioka

2009

GaAs

Tomioka

CMOS

InGaAs Ge Intel

III-V

CMOS

10 InGaAs As

- -

Tomioka

(BCB)

BCB

InGaAs

-

InGaAs InP InAlAs

InGaAs

InGaAs

MOSFET

p

Tomioka

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| Research Review


Santa Barbara (UCSB)

(VCSEL)

(pico-projectors)

S. Nakamura D. Feezell C. Holder S.

DenBaars VCSEL m

GaN (MOCVD)

GaN GaN

c Nakamura

c (AlGaIn) N 1996

c

c GaN

Nakamura

m

UCSB

GaN m 2005

GaN 2007

GaN 2009 Nakamura

GaN VCSEL

VCSEL

VCSEL

VCSEL

GaNVCSEL

2007 Ecole (EPFL)

AlInN/GaN VCSEL

Nichia GaN VCSEL

VCSEL

VCSEL m

Ecole Novagan Eric

Feltin c

Santa Barbara m

c

Nakamura

(Mitsubishi Chemical) m

LED Feltin

m c

Nakamura VCSEL

VCSEL

Nakamura (DBR)

VCSEL

VCSEL

VCSEL 70mA

10 19 (microW)

Nakamura

VCSEL

Shuji Nakamura (VCSEL)Compound Semiconductor Nakmura

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| Research Review


Austin (UTA)

GaN

UTA Chih-Kang Ken Shih

Shih Charlotte Sanders

Science

(GaInN)

GaInN

Shih

(MBE)

ShangjrGwo

500 mW 3.4 μm

60mm 60 1mm 1.5μm

0.75μm 10μm

1μm

VGS = 8V VDS = 10V

6A 200mm AlGaN/GaN

HEMT

150mm

8A 750V Ron,sp

2.9 m��cm2 600V 7μA [2]

200mm

:

CMOS 200mm CMOS

AlGaN/GaN HEMT

200mm 1.15 mm

AlGaN/GaN/AlGaN

CMOS

GaN

e-mode AlGaN/GaN MISHEMT

60mm 6A

GaN

1. K. Cheng et al., AlGaN/GaN/AlGaN Double Heterostructures

Grown on 200 mm Silicon (111) Substrates with High Electron

Mobility, Appl. Phys. Express, Vol. 5, p. 011002 (2012).

2. M. Van Hove et al., CMOS Process-Compatible High-

Power Low-Leakage AlGaN/GaN MISHEMT on Silicon ,

IEEE Electron Device Lett., Vol. 33, No. 05, p. 667 (2012).

3. B. De Jaeger et al., Au-free CMOS-compatible AlGaN/GaN

HEMT processing on 200 mm Si substrates , in Proceedings

of 24th International Symposium on Power Semiconductor

Devices and ICs , Bruges, Belgium, 3-7 June, 2012, p. 49.

24

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