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:105187, , , 27.: 8-495-366-50-65E-mail: [email protected]

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22.09.2015 . .-. . 19,8 500 . 49 22.09.2015 .

. ., . ., . ., . ., . ., . ., . . IGBT Trench ............................................................................... 6

. ., . ., . ., . . X-: ............................................................................ 12

. ., . ., . ., . ., . . X-: ....................................................................... 21

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, , 2015

ContentsKrasnov A. A., Maximov A. N., Krymko M. M., Legotin S. A., Korneev S. V., Murashev V. N., Konovalov M. P. High voltage IGBT based on Trench structures .................................. 6

Gerasimov A. O., Perevezencev A. V., Shishkov M. A., Shmakov D. V. Six-channel TRM for X-band APAA: receiving cannel ...................... 12

Ivanov K. A., Osipovsky A. A., Redka Al. V., Redka An. V., Tikhomirov A. V. Six-channel TRM for X-band APAA: transmitting channel ................ 21

Murashev V. N., Legotin S. A., Elnikov D. S., Kuzmina K. A. High operation speed photodetector ................................................ 33

Zagnetko M. A., Kukk K. I., Lopin M. I., Mishkin T. A., Ryzhov V. A., Sechenykh A. M., Yunakov A. N. Modern state of electrovacuum and semiconductor television transmitters ....................................................................... 38

Vasilevsky V. V., Mikholenok A. N. The method and the algorithm and DSP images based on uniform computational structures .................................................................. 43

Chelembiy V. M., Bekishev R. A. Elimination of abnormal measurement errors in passive multiscale phase direction finder ....................................................................... 49

Starykh . . The method for the synthesis of functional blocks of combinational circuits with the use minterms and maxterms................................... 63

Chernykh M. I., Kozhevnikov V. A., Tsotsorin A. N. Simulation of buffer layer parameters influence on the static characteristics of microwave power SiC MESFET ........................... 70

Paderov V. P., Silkin D. S. The effect of a thin layer of high impurity concentration on the breakdown voltage of the p-n junction .............................................. 82

Perov G. V., Egorkin A. V. Determination of operation range of oxidized polysilicon surface inhomogeneity by the distribution of electric fields in ultra-thin dielectric in Sentaurus Tcad environment ......................................... 89

Nezhentsev A. V., Zemlykov V. E., Egorkin V. I., Garmash V. I. Optimization of ohmic contacts annealing modes in GaAs nanoheterostructures........................................................................ 96

Lozovsky V. N., Lunin L. S., Seredin B. M. The features of silicon power devices production by the thermomigration ................................................................... 103

Dyakonitsa O. Y., Minnebaev V. M. Electrophysical and magnetic properties of hexaferrite phases of SrO-CoO-Fe2O3 and solid solutions on their basis ......................116

Gusev O. V. Simulation model of the degaussing system for elements made of structural alloys based on semiconductor MOSFET keys .............. 121

Formal rules for personal works submitted to journal ..................... 131

Journal was published from 1958 year

Founder:Joint-Stock Company Scientific & Production Enterprise Pulsar

Supervisory CouncilPresident of the Supervisory CouncilV.V. Gruzdov, Ph.D., Professor,General Director of JSC S&PE Pulsar

A.A. Sokolov, Deputy General Director of JSC RuselectronicsG.A. Egorochkin, Ph.D., General Director of JSC FSPC NNIIRTV.G. Nemudrov, Sc.D., Professor, General Director of JSC NIIMA ProgressS.N. Ignatkov, General Director of JSC CB KuntsevoV.A. Telets, Sc.D., Professor,Director IAEE NRNU MEPhIA.A. Schuka, Sc.D., Professor MTSU MIREA

Editorial boardChief EditorY.V. Kolkovsky, Sc.D., ProfessorDeputy Chief EditorV.F. Sinkevich, Sc.D., ProfessorA.A. Shapovalov, Ph.D.

The Members of Editorial Board:A.N. Aleshin, Sc.D.A.S. Evstigneev, Ph.D.I.P. Zhigan, Sc.D., ProfessorV.I. Isyuk, Ph.D.E.V. Kaevitser, Ph.D.Y.A. Kontsevoy, Sc.D., ProfessorI.V. Malyshev, Ph.D.E.I. Minakov, Sc.D., Associate ProfessorV.M. Minnebaev, Ph.D.V.A. Moshnikov, Sc.D., ProfessorK.O. Petrosyants, Sc.D., ProfessorE.M. Savchenko, Ph.D.A.S. Skrylev, Ph.D.V.A. Telets, Sc.D., ProfessorV.P. Chaliy, Ph.D.Y.O. Nikolskaya, Editorial Board Executive Secretary

EditorV.M. MinnebaevA.O. AnikinaDesign & layoutY.O. NikolskayaE.A. RepkinaTranslateE.M. TemperD.I. Lekanov

Publishers & Editorial Staff Address:105187, Moscow, Okruzhnoy proezd, 27Tel.: 8-495-366-50-65E-mail: [email protected]

Subscribe to catalogs Rospechat:Publication of scientific and technical information authority index number 59890

The Journal is included in the list of the leading peer-reviewed scientific journals and publications HAC in Russia and the Russian Science Citation Index

Journal recognized at VINITI database and Abstract Journal

Signed in print 22.09.2015Printing offset in colorPublisher's sheets 19.8Print run 500 copiesOrder No 49 at 22.09.2015

. 2. . 2-3 (236-237) 20156

621.382.323

. 2. . 2-3 (236-237) 2015, . 6-11Electronic engineering. Series 2. Semiconductor devices. Issue 2-3 (236-237) 2015, pp. 6-11

igBt trEnch

. . 1,2, . . 2, . . 2, . . 1, . . 2, . . 1, . . 1

1 , , 119991, . , ., 4 2 , 105187, . , ., 27

IGBT , -- U = 2,05 , U = 3,3 , U = 617 . - - .

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: - 2008-2015 , 14.429.11.0003 05.03.2014

high voltagE igBt BaSEd on trEnch StructurES

a. a. Krasnov1,2, a. n. maximov2, m. m. Krymko2, S. a. legotin1, S. v. Korneev2, v. n. murashev1, m. P. Konovalov1

1 NUST MISIS, 119991, Moscow, Leninskiy prospect, 4 2 JCS S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

IGBT with a vertical channel, providing collector-emitter saturation voltage UCEsat = 2,05 V, threshold voltage UCEthresh = 3,3 V and reverse voltage UCE = 617 V has been developed. The results of investigation of measured current-voltage and dynamic characteristics of samples are presented.

Keywords: IGBT, power electronics, power transistor, Trench structure

Data of authors: Krasnov Andrey Andreevich, postgraduate, [email protected]; Maximov Anatoliy Nesterovich; Krymko Mikhail Mironovich, Ph.D.; Legotin Sergey Aleksandrovich, Ph.D., associate professor, [email protected]; Korneev Sergey Viktorovich; Murashev Victor Nikolaevich, Sc.D., professor, [email protected]; Konovalov Mikhail Pavlovich, Ph.D., associate professor

Acknowledgements: Research was carried out as a part of Federal Special-purpose Program Development of electronic component base and radioelectronics for 2008-2015, Government Contract 14.429.11.0003, 05.03.2014

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1. Chang H. R. et al. Insulated Gate Bipolar Transistor

(IGBT) with a Trench Gate Structure // IEEE International Electron Devices Meeting, Abstract 29.5, 1987, pp. 674-677.

2. Yuan X., Trajkovic T., Udreak F., Thomson J., Waind P. R., Taylor P. et al. Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process // Solid-State Electron, 2002, 46, pp. 1907-1912.

3. . CSTBT 5- IGBT Mitsubishi-Electric // - . 2004. 4. . 4-7.

4. ., . Trench-4 IGBT. Semikron International // . 2008. 2. . 28-30.

5. Baliga B. J. Power Semiconductor Devices. PWS, 1996.6. . ., . ., . .

TRENCH - // . 2. - . 2013. 1. . 37-41.

7. . : 2- : [. .]. . 2-, . . .: , 1984. 456 .

8. Ghandhi S. K. Semiconductor power devices. Wiley N.Y., 1977.

9. Kao Y. C., Wolley E. D. // Proc. of the IEEE, 1967, vol. 55, 8, pp. 1409-1414.

References1. Chang H. R. et al. Insulated Gate Bipolar Transistor

(IGBT) with a Trench Gate Structure // IEEE International Electron Devices Meeting, Abstract 29.5, 1987, pp. 674-677.

2. Yuan X., Trajkovic T., Udreak F., Thomson J., Waind P. R., Taylor P. et al. Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process // Solid-State Electron, 2002, 46, pp. 1907-1912.

3. Pavlyuk D. CSTBT Mitsubishi-Electric 5th generation of IGBT modules. Silovaya elektronika i pitanie RE [Power electronics and supply], 2004, 4, pp. 4-7.

4. Vintrikh A., Kolpakov A. Ultimate IGBT technology Trench-4. Semikron International. Silovaya elektronika [Power Electronics], 2008, 2, pp. 28-30.

5. Baliga B. J. Power Semiconductor Devices. PWS, 1996.6. Korneev S. V., Krymko M. M., Maksimov A. N.

Capabilities and limitations of MOS TRENCH structures. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2013, 1, pp. 37-41.

7. Zi S. Fizika poluprovodnikovykh priborov [Physics of semiconductor devices]. Moscow, Mir Publ., 1984, vol. 1, 456 p.

8. Ghandhi S. K. Semiconductor power devices. Wiley N. Y., 1977.

9. Kao Y. C., Wolley E. D. // Proc. of the IEEE, 1967, vol. 55, 8, pp. 1409-1414.

. 2. . 2-3 (236-237) 201512

621.396.6:621.316.372

X-:

. . , . . , . . , . . , 105187, . , ., 27

- - () -. , , - , . , , , , (IP3).

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SiX-channEl trm for X-Band aPaa: rEcEiving cannEl

a. o. gerasimov, a. v. Perevezencev, m. a. Shishkov, d. v. ShmakovJSC S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

Results of development and measurements of -band receiving part of six-channel transceiver module (TRM) are presented. The design, parameters, operating modes, and tuning technique are described. Factors influencing the noise figure, dynamic range, initial phase of channels gain, and IP3 distortions are considered.

Keywords: -band, active phase array, antenna transceiver module, low-noise amplifier, limiter power, hybrid integrated circuit, mixer of microwave signals, intermodulation distortions, intermediate frequency amplifier, initial phase

Data of authors: Gerasimov Andrey Olegovich, [email protected]; Perevezencev Aleksander Vladimirovich, Ph.D., [email protected]; Shishkov Mikhail Aleksandrovich, [email protected]; Shmakov Dmitry Vladimirovich, [email protected]

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. . . . . .: , 2004. 488 .

2. Abolduyev I. M., Zubkov A. M., Minnebaev V. M. X-band power amplifier for active phased-array antennas // Proceedings of the 3rd International Conference on Satellite Communications, ICSC98, part 1, Moscow, 1998, pp. 171-172.

3. Abolduyev I. M., Minnebaev V. M., Senderuk Yu. S. Transceiver modules for X-band active phased array // Proceedings of 15th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo2005, Sevastopol, Crimea, Ukraine, 2005, pp. 145-147.

4. . ., . ., . ., . ., . . SiGe GaN - // . 2. - . 2009. 2 (222). . 5-10.

5. . ., . ., . ., - . ., . ., . ., . ., . ., . . - // - III - . , . , 8-10 2014 ., . 33-34.

6. . ., - . ., . ., - . ., . ., . . 300-- - // - IX - - . , . , 1-3 2010 ., . 32.

7. . ., - . ., . ., . ., . ., . ., - . ., . ., . ., . . 10 - GaAs p-i-n // . 2. . 2011. 1 (226). . 27-35.

8. . ., . ., . . - - S- - // . 2. . 2010. 1 (224). . 3-6.

9. . ., . ., . ., . .

. 2. . 2-3 (236-237) 201520

. ., . ., . ., . .

// . 1993. 5. . 12-19.

References1. Aktivnye fazirovannye reshetki [Active phased arrays].

Edited by D. I. Voskresenskogo and A. I. Kanaschenkova, Moscow, Radiotekhnika Publ., 2004, 488 p.

2. Abolduev I. M., Zubkov A. M., Minnebaev V. M. X-band power amplifier for active phased-array antennas // Proceedings of the 3rd International Conference on Satellite Communications, ICSC98, part 1, Moscow, 1998, pp. 171-172.

3. Abolduev I. M., Minnebaev V. M., Senderuk Yu. S. Transceiver modules for X-band active phased array // Proceedings of 15th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo2005, Sevastopol, Crimea, Ukraine, 2005, pp. 145-147.

4. Vasilyev A. G., Kolkovsky Y. V., Korneev S. V., Dorofeev A. A., Minnebaev V. M. SiGe and GaN microwave devices for transceivers and transmitting modules. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2009, 2, pp. 5-10.

5. Gerasimov A. O., Zaytsev Y. P., Ivanov K. A., Kolkovsky Y. V., Osipovsky A. A., Perevezencev A. V., Redka Al. V., Kuliev M. V., Minnebaev V. M. Materialy XIII Vserossiyskoy nauchno-tekhnicheskoy konferentsii Tverdotelnaya elektronika. Slozhnye funktsionalnye

bloki REA [Proceedings of XIII Russian Scientific Conference Solid-state electronics. Complex functional REB]. Dubna, 8-10th of October 2014, pp. 33-34.

6. Abolduev I. M., Vald-Perlov V. M., Veits V. V., Gerasimov A. O., Minnebaev V. M., Mochalov M. N. Materialy IX Vserossiyskoy nauchno-tekhnicheskoy konferentsii Tverdotelnaya elektronika. Slozhnye funktsionalnye bloki REA [Proceedings of IX Science Conferencion Solid-state electronics. Complex functional radar blocks]. Zvenigorod, 1-3rd of December 2010, p. 32.

7. Abolduev I. M., Vald-Perlov V. M., Veits V. V., Garber G. Z., Gerasimov A. O., Zubkov A. M., Ivanov K. A., Krasilnikov V. D., Minnebaev V. M., Chernykh A. V. 10 W GaAs PIN diode microwave power limiter MIC. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2011, 1, pp. 27-35.

8. Gerasimov A. O., Minnebaev V. M., Mochalov M. N. Adjustment of frequency response characteristic of S-band low noise amplifier in serial production. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2010, 1, pp. 3-6.

9. Golik A. M., Emets V. F., Kleymenov Y. A., Levchuk V. B. Transceivers of active PAR. Zarubezhnaya radioelektronika [Foreign electronics], 1993, 5, pp. 12-19.


621.396.677.494:621.396.6-182.7

X-:

. . , . . , . . , . . , . . , 105187, . , ., 27

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: , [email protected]; c, [email protected]; , , [email protected]; , , [email protected]; , tikhomirov @pulsarnpp.ru

SiX-channEl trm for X-Band aPaa: tranSmitting channEl

K. a. ivanov, a. a. osipovsky, al. v. redka, an. v. redka, a. v. tikhomirovJCS S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

The results of design and fabrication of the six-channel -band T/R-module for Active phased antenna arrays are presented in the article. The results of measurements of the main parameters of the transmitting channel, its design, main technical characteristics and the results of thermal performance simulation in a pulsed mode are given. The main factors affecting the linearity of the phase response in the transmitting channel, the variation of phase between transmitting channels in the ensemble are investigated.

Keywords: APAA, T/R-module, transmitting channel, power amplifier, GaN

Data of authors: Ivanov Kirill Andreevich, [email protected]; Osipovsky Aleksey Alekseevich, [email protected]; Redka Aleksey Vladimirovich, postgraduate, [email protected]; Redka Andrey Vladimirovich, postgraduate, [email protected]; Tikhomirov Aleksandr Vladimirovich, tikhomirov @pulsarnpp.ru

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. ., . . SiGe GaN - // . 2. - . 2009. 2 (222). . 5-10.

2. Abolduyev I. M., Zubkov A. M., Minnebaev V. M. X-band power amplifier for active phased-array antennas // proceedings of the 3rd International Conference on Satellite Communications, ICSC'98, part 1, Moscow, 1998, pp. 171-172.

3. T/R Module Solution for X-band Phased-array Radar // Microwave Journal, 2010, October, pp. 146-150.

4. Abolduyev I. M., Minnebaev V. M., Senderuk Yu. S. Transceiver modules for X-band active phased array // Proceedings of 15th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo'2005, Sevastopol, Crimea, Ukraine, 2005, pp. 145-147.

5. GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays // CS Mantech Conference, May 13th-16th, 2013, New Orleans, Louisiana, USA, pp. 99-101.

6. . ., . ., . ., - . ., . ., . .,

, /

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X-:

. ., . ., . . - - // - III - - . , . , 8-10 2014 ., . 33-34.

7. . ., . ., . ., . . X-: // -. 2. . 2015. 2-3 (236-237). . 12-20.

References1. Vasilyev A. G., Kolkovsky Y. V., Korneev S. V.,

Dorofeev A. A., Minnebaev V. M. SiGe and GaN microwave devices for T/R and transmitting modules. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2009, 2, pp. 5-10.

2. Abolduyev I. M., Zubkov A. M., Minnebaev V. M. X-band power amplifier for active phased-array antennas // proceedings of the 3rd International Conference on Satellite Communications, ICSC'98, part 1, Moscow, 1998, pp. 171-172.

3. T/R Module Solution for X-band Phased-array Radar // Microwave Journal, 2010, October, pp. 146-150.

4. Abolduyev I. M., Minnebaev V. M., Senderuk Yu. S. Transceiver modules for X-band active phased array // Proceedings of 15th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo'2005, Sevastopol, Crimea, Ukraine, 2005, pp. 145-147.

5. GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays // CS Mantech Conference, May 13th-16th, 2013, New Orleans, Louisiana, USA, pp. 99-101.

6. Gerasimov A. O., Zaytsev Y. P., Ivanov K. A., Kolkovsky Y. V., Osipovsky A. A., Perevezentsev A. V., Redka Al. V., Kuliev M. V., Minnebaev V. M. Materialy XIII Vserossiyskoy nauchno-tekhnicheskoy konferentsii Tverdotelnaya elektronika. Slozhnye funktsionalnye bloki REA [Proceedings of XIII Russian Scientific Conference Solid-state electronics. Complex functional REB]. Dubna, 8-10th of October 2014, pp. 33-34.

7. Gerasimov A. O., Perevezentsev A. V., Shishkov M. A., Shmakov D. V. Six-channel X-band T/R module for APAA: receiving channel. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2015, 2-3, pp. 12-20.

. 10 0,35 /

. 2. . 2-3 (236-237) 201532


621.383

. . 1, . . 1, . . 1,2, . . 11 , , 119991, . , ., 4

2 , 105187, . , ., 27

- . , , . - .

: , -

: , ..., , [email protected]; , ..., , [email protected]; , , [email protected]; , [email protected]

: - 2008-2015 , 14.430.12.0001 30.09.2013

high oPEration SPEEd PhotodEtEctor

v. n. murashev1, S. a. legotin1, d. S. Elnikov1,2, K. a. Kuzmina11 NUST MISIS, 119991, Moscow, Leninskiy prospect, 4

2 JCS S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

This article is dedicated to the research of the new type of high-speed matrix optical radiation receiver based on functionally integrated bipolar structures. Matrix radiation receiver operating principle is based on the local reinforcement of photocurrent, made by the radiation, bipolar transistor in standard cell of matrix photoreceiver. Results of measurements of sensitive samples are presented.

Keywords: matrix photodetector, bipolar structure

Data of authors: Murashev Victor Nikolaevich, Sc.D., professor, [email protected]; Legotin Sergey Aleksandrovich, Ph.D., associate professor, [email protected]; Elnikov Dmitry Sergeevich, postgraduate, [email protected]; Kuzmina Kseniya Andreevna

Acknowledgements: Research was carried out as a part of Federal Special-purpose Program Development of electronic component base and radioelectronics for 2008-2015, Government Contract 14.430.12.0001, 30.09.2013

, PIN- [1, 2].

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. 2. . 2-3 (236-237) 201534

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. 2. . 2-3 (236-237) 201536

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1. Murashev V. N., Legotin S. A., Elnikov D. S.,

Didenko S. I., Rabinovich O. I. Silicon photodetectors matrix coordinate bipolar functionally integrated structures // Journal of Nano- and Electronic Physics, 2015, vol. 7, 1, pp. 01009-1 - 01009-3.

2. Murashev V. N., Yurchuk S. Y., Legotin S. A., Yaromskiy V. P., Osipov Y. V., Astahov V. P., Elnikov D. S., Didenko S. I., Rabinovich O. I., Kuzmina K. A. Analysis of the p-i-n-structures electrophysical characteristics influence on the spectral characteristics sensitivity // Journal of Nano- and Electronic Physics, 2015, vol. 7, 2, pp. 1-5.

3. Lutz G. Semicondutor Radiation Detector. Springer, 2007.

References1. Murashev V. N., Legotin S. A., Elnikov D. S.,

Didenko S. I., Rabinovich O. I. Silicon photodetectors matrix coordinate bipolar functionally integrated structures // Journal of Nano- and Electronic Physics, 2015, vol. 7, 1, pp. 01009-1 - 01009-3.

2. Murashev V. N., Yurchuk S. Y., Legotin S. A., Yaromskiy V. P., Osipov Y. V., Astahov V. P., Elnikov D. S., Didenko S. I., Rabinovich O. I., Kuzmina K. A. Analysis of the p-i-n-structures electrophysical characteristics influence on the spectral characteristics sensitivity // Journal of Nano- and Electronic Physics, 2015, vol. 7, 2, pp. 1-5.

3. Lutz G. Semicondutor Radiation Detector. Springer, 2007.

. 2. . 2-3 (236-237) 201538


621.397.44

. . 1, . . 1, . . 2, . . 2, . . 2, . . 3, . . 2

1 , 105094, . , . , 7, . 1 2 . . . , 141190, . , . , 2

3 , 141002, . , . , 2

1950- . - 1 15 . - . 1990- , (IOT). . . . , - . - . . - 14-21 %. 36-42 %, 90 %.

: , IOT, ,

: , [email protected]; , [email protected]; , [email protected]; , [email protected]; ; , [email protected]; , [email protected]

modErn StatE of ElEctrovacuum and SEmiconductor tElEviSion tranSmittErS

m. a. Zagnetko1, K. i. Kukk1, m. i. lopin2, t. a. mishkin2, v. a. ryzhov2, a. m. Sechenykh3, a. n. Yunakov2

1 CJSC MNITI, 105094, Moscow, Golyanovskaya street, 7a-1 2 JSC SPE Istok named after A. I. Shokin, 141190, Fryazino, Vokzalnaya street, 2

3 Federal State Enterprise MNIIRIP, 141002, Mytishchi, Kolpakova street, 2

Coverage of TV broadcasting in our country began immediately after the end of World War II. Most devices have transmission output power of 1 to 15 kW. Klystrons and tetrodes were used as output amplifier units depending on the frequency band. Since the early 90s electronic devices with inductive output, called klystrods (IOT) appeared abroad. In Russia, the company Istok has developed a multi-beam device, which was called Istron. He is been demonstrated the possibility of creating a digital power TV transmitters on these devices. TV transmitters of modern television network are built on imported semiconductor triodes. Industrial PAE of such transmitters is 14-21 %. Amplifier designed on Istron has PAE of 36-42 % and the degree of localization of microwave devices used up to 90 %.

Keywords: transmitter, IOT, Istron, PAE

Data of authors: Zagnetko Mikhail Anatolievich, [email protected]; Kukk Kalyu Ivanovich, [email protected]; Lopin Mikhail Ivanovich, [email protected]; Mishkin Tariel Akhmetovich, [email protected]; Ryzhov Vladimir Alekseevich; Sechenykh Aleksey Mikhaylovich, [email protected]; Yunakov Aleksey Nikolaevich, [email protected]


-

1950- . - . - - . . - . - 1 15 , (1-5 ). 1950- (6-12 ). - ( ) - .

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. 2. . 2-3 (236-237) 201540

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. 2. . 2-3 (236-237) 201542

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1. . 2152102 . -

/ . ., . ., . ., . . 15.10.1998.

2. ., ., ., ., . - () // 625. 2007. 3.

References1. Electrovacuum microwave device Istron: patent

2152102 Russia; Lopin M. I., Mishkin T. A., Pobedonostsev A. S., Korolev A. N.; priority of 15.10.1998.

2. Korolev A., Lopin M., Bakumenko A., Mishkin T., Ryzhov V. Operating experience of multi-beam klystode (Istron) in television transmitter Ilmen. Journal 625, 2007, no. 3.


629.783

. . 1, . . 21 ( ),

125993, . , -80, -3, , 4 2 , 105187, . , ., 27

. - - .

: , , - ,

: , ..., , [email protected]; , ..., [email protected]

thE mEthod and thE algorithm and dSP imagES BaSEd on uniform comPutational StructurES

v. v. vasilevsky1, a. n. mikholenok21Moscow Aviation Institute (National Research University), 125993, Moscow, -80, Volokolamskoye highway, 4

2JSC S&PE Pulsar, 105187, Moscow, Okruzhnoy proezd, 27

The problem of improving the efficiency and quality of processing of remote sensing in order to detect anomalies and irregularities in the original image is considered. An algorithm is proposed for complex digital processing of multispectral images and special calculator structure to meet the challenges of real-time frames stream processing.

Keywords: remote sensing, digital image processing, correlation method, spetsvychislitel

Data of authors: Vasilevsky Valery Vladimirovich, Ph.D., associate professor, [email protected]; Mikholenok Aleksandr Nikolayevich, Ph.D., [email protected]

-, - (), - , - - . - - :

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. 2. . 2-3 (236-237) 201544

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. 2. . 2-3 (236-237) 201546

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Nj, .

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1. . . .

. .: -, 2010. 560 .

2. . ., . . - // : . .: --, 2005. . 6. . 40-45.

3. . ., . ., . . - - // . . 1971. . XIV. 12. . 1265-1281.

4. . . - - . .: , 1967. 228 .

5. . ., . . - -. : , 1966. 186 .

6. . . . .: -, 2010. 810 .

. 1

. 2


7. . ., . . . .: , 1979. 325 .

References1. Shovengerdt R. A. Distantsionnoe zondirovanie. Modeli

i metody obrabotki izobrazheniy [Remote probing. Models and methods of image processing]. Moscow, Tekhnosfera Publ., 2010, 560 p.

2. Vasilevsky V. V., Zanin K. A. Synthesis of multi-purpose Earth surveillance system. Aktualnye voprosy proektirovaniya kosmicheskikh system i kompleksov: sbornik nauchnykh trudov [Actual issues of designing the space systems and complexes: collection of scientific papers], Moscow, Blok-Inform-Ekspress Publ., 2005, 6, pp. 40-45.

3. Gubarev L. M., Dulin V. N., Strukov A. Z. Homogeneous computation environments and challenges of their microelectronic execution. Izvestiya vuzov SSSR.

Radioelektronika [News on USSR Higher Education. Radio engineering], 1971, T. XIV, 12, pp. 1265-1281.

4. Prangishvili I. V. Mikroelektronika i odnorodnye struktury dlya postroeniya logicheskikh i vychislitelnykh ustroystv [Microelectronic and homogeneous structures for logical and calculation devices]. Moscow, Nauka Publ., 1967, 228 p.

5. Evreinov E. V., Kosarev Yu. G. Odnorodnye universalnye vychislitelnye sistemy vysokoy proizvoditelnosti [Homogeneous all-purpose computers with high performance]. Novosibirsk, Nauka Publ., 1966, 186 p.

6. Ugryumov E. P. Tsifrovaya skhemotekhnika [Digital circuitry]. St. Petersburg, BHV-Petersburg Publ., 2010, 810 p.

7. Oppengeym A. V., Shafer R. V. Tsifrovaya obrabotka signalov [Digital signal processing]. Moscow, Svyaz Publ., 1979, 325 p.

. 2. . 2-3 (236-237) 201548


621.396.96

. . , . . ,

644027, . , ., 24

, . - , - . () . - , - .

: , , , -- ,

: , [email protected]; , [email protected]

Elimination of aBnormal mEaSurEmEnt ErrorS in PaSSivE multiScalE PhaSE dirEction findEr

v. m. chelembiy, r. a. Bekishev JSC Central design bureau of automatics, 644027, Omsk, Kosmicheskiy prospect, 24a

Passive multiscale phase direction finders with antenna systems with flat antenna arrays operating under a radiotransparent radome are considered. On the basis of elliptical polarization antenna model, the relationship describing the performance of polarization errors in a phase direction finder is gained. Comparison and results of numerical modeling of two experimental data processing methods are represented which confirm an efficiency of considered correction methods of polarization errors in the phase direction finder.

Keywords: antenna array, phase direction finder, direction finding pattern, amplitude-phase field distribution correction, polarization errors

Data of authors: Chelembiy Vyacheslav Mikhailovich, [email protected]; Bekishev Roman Alexandrovich, [email protected]

-

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,

(

k,

k)

() -

=

(

k,

k)

(, ,

,

). (16)

- p

i(, ), -

i(, ),

. , - - , ( -) - . ( ) - () . - - - . , , , . , , - -, , , , .

- , - ( , ). - , -


, - -- .

( - ) - -, , - , - . - - . 5.

() - -, - . - , , , , . .

, - - . , - - . (-) , , ( - ). - (4) - . , , - - - - , - (4) - - .

. 5 :

, U, -, ,

, , ,

. 2. . 2-3 (236-237) 201558

. ., . .

- , - (4) . , . , . , , - , - , . .

- . - , , , - , - - . - - (, ) -

(

k,

k). -

- . 6.

- - . - i- - ( )

U (, )i = Kx (

k,

k)i Ux (,

i) +

+ Ky (k,

k)i Uy (, )

i, (17)

Kx (k,

k)i = ex * E / U

KX(

k,

k)i;

Ky (k

k)i = ey* Ey / U

KY(

k

k)i; E, Ey

; ex, ey -; (V )* - V, ;

. 6

: , Ux, U,

, , , (

), , , , , U , UY


Ux (, )i = Hxx (, )

i E + Hxy (, )

i Ey,

Uy (, )i = Hyx (, )

i E + Hyy (, )

i Ey

i- . Hxx (, )

i

Hxy (, )i -

- i- . Hyx (, )

i

Hyy (, )i -

i- . Ex, Ey - . U

KX (

k,

k)i = Hxx (

k,

k)i E + Hxy (

k,

k)i Ey,

UKY (

k,

k)i = Hyx (

k,

k)i E + Hyy (

k,

k)i Ey

i- , - .

i- - - , - , , . , , - - . - - -

. (17) - . , . - - , - - .

. 7-9

(- = 0), - - ( ) - :

. (. 4);

. -, - (. 5);

. - - (. 6).

()

=

-

,

() (). 7

. 2. . 2-3 (236-237) 201560

. ., . .

- ,

= 360 dx / sin, dx -

, .

() - , , U

().

( ) ; U

(-

) -. , - ; .

- . 7-9 : = 30, -

, -, . - . - -. . - , , E.

. 7 , - - . -

() (). 8

() (). 9


( ). U

-

. , - . .

. - . 8 , - . U

, . - .

- -. . 9 , . 7 . 8, - , . , - U

, -

., -

, ,

. . -, - , . - , - , - . . 10.

. 10 - - : () , () 1, () 2. , - , .

- . - , - - .

() () 1 () 2 . 10

. 2. . 2-3 (236-237) 201562

. ., . .

, - - . . . - - , - -, .

1. . .

- // . C. . 2002. . 1. . 3-8.

2. . . // . 2002. . 4. . 64-70.

3. . ., . ., . . - - // . 2010. 55, 1. . 49-56.

4. . . . .: , 2003. 200 .

5. . ., . ., . . - . .: . , 1966. 440 .

6. . ., . ., . . - . .: , 2005. 704 .

7. . ., . . : . : , 2002. 251 .

8. -. . . : . . .: , 1990. 584 .

References

1. Chelembiy V. M. Measurement of signal linear polarization of passive multiscale phase direction finder. Voprosy radioelektroniki. Ser. OT [Radio-electronic Issues. Ser. OT], 2002, Vol. 1, pp. 3-8.

2. Chelembiy V. M. Decreasing the measurement errors in passive multiscale phase direction finder. Radiopromyshlennost [Radio-electronic Industry], 2002, Vol. 4, pp. 64-70.

3. Ivanov N. M., Onishchenko V. S., Shevchenko V. N. Spatial localization of polarized electromagnetic field sources. Radiotekhnika i elektronika = Journal of Communications Technology and Electronics, 2010, T. 55, 1, pp. 49-56.

4. Ratynskiy M. V. Adaptatsiya i sverkhrazreshenie v antennykh reshetkakh [Adaptation and ultra-resolution in antenna arrays ]. Moscow, Radio i svyaz Publ., 2003, 200 p.

5. Kanareykin D. B., Pavlov N. F., Potekhin V. A. Polyarizatsiya radiolokatsionnykh signalov [Polarization of radio signals]. Moscow, Sov. Radio Publ., 1966, 440 p.

6. Kozlov A. I., Logvin A. I., Sarychev V. A. Polyarizatsiya radiovoln [Polarization of radio-waves]. Moscow, Radiotekhnika Publ., 2005, 704 p.

7. Denisov V. P., Dubinin D. V. Fazovye pelengatory: monografiya [Phase direction finders: monograph]. Tomsk, TGUSUR Publ., 2002, 251 p.

8. Marpl jr. S. L. Tsifrovoy spektralnyy analiz i ego prilozheniya [Digital spectral analysis and its applications]. Moscow, Mir Publ., 1990, 584 p.



004.414.23

. . - ,

, (), (), 347928, . , ., 44,

. - , . , . , OrCAD16.6. - . 2- -.

: , , , ,

: , , [email protected]

: - - -, (. )

thE mEthod for thE SYnthESiS of functional BlocKS of comBinational circuitS With thE uSE mintErmS

and maXtErmS

. . StarykhTaganrog Technology Institute of South Federal University, College of Electronics and Electronic Equipment Engineering, The Department of Electronic Apparatuses Design,

347928, Taganrog, Nekrasovsky street, 44, building

A method of building functional blocks of combinational circuits considered in this paper. A necessary function is forming at the blocks output by means of two CMOS circuits located at the top and bottom planes. The rules of block synthesis are given, which are considered by the example of the implementation of the scheme XOR and Transfer in the full adder. The validity of the proposed synthesis methods is confirmed by simulation schemes developed in the program OrCAD16.6. A new energy-topological criterion of circuits efficiency is introduced. A comparison of adder combinational circuit on NAND gate and the developed adder by electrical parameters and efficiency is made.

Keywords: combinatorial circuit, Karnaugh map, minterm, maksterm, modeling

Data of author: Starykh Anastasiya Alekseevna, postgraduate, [email protected]

Acknowledgements: Research results were obtained on equipment of Center for Collective Use and Scientific and Educational Center Nanotehnologii of Taganrog Technology Institute of South Federal University, College of Electronics and Electronic Equipment Engineering

. 2. . 2-3 (236-237) 201564

. .

-

- : , , , -, - [1]. - , .

-

- - , . 1 [2].

- - (0), - (A1) - (DD1). : , -. K-, 1 0 - 1, 1 0, Q = 1, 0, 0, 1 - Q = 0.

[2] ,

- . , -. . , .

- .

(. 2).

Sout -

:

Sout = A B C

in. (1)

. 1

. 2


Cout

- :

out = + S C

in. (2)

-

, - 0 1. S A B :

S = A B = AB + AB. (3)

(3) - .

, (3), S (. 3).

- (. 3).

, . 3, S' - :

S' = (A + B )(A + B ). (4)

- (4), , -

0 S (0):

S (0) = (A + B )(A + B ). (5)

- (3) (5), [3]:

- - ( -);

- - ( -).

1 0 , (. 4).

, . 4, OrCAD16.6. - - . . 5.

S (. 5) - - (3), - - .

() ()

. 3 S ()

()

. 4

. 2. . 2-3 (236-237) 201566

. .

(2)

, , S, Cin -

. -

, (2), - C

out (. 6).

- (. 6).

(. 6) C

out'

:

Cout' = (A + B ) (S + C

in). (6)

- (6), , - 0

out (0):

Cout

(0) = (A + B ) (S + Cin). (7)

,

. 5 S

B

() (). 6

Cout () ()

. 7


1 (2) 0 (7) (. 7).

, . 7, OrCad16.6. - C

in, S, A, B -

. - . 8.

. 8, - C

out (2),

.

-

, . 2. - . 9.

Sout C

out (. 9) -

(1) (2) , , - - .

- - , 2- (. 10).

- OrCad16.6 10 .

. 8 Cout Cin, S, A, B

. 9 Sout , Cout ,

Cin, A, B

. 10 2-

. 2. . 2-3 (236-237) 201568

. .

- BSIM 3 0,18 . - p- - 2,0 , n- 1,2 [4].

: ( -

..),

P, N.

- A N. . L, - :

L = A*N =

..N.

- - 2- .

-, - - - 2- 2 .

, , - . - , - . , , -. , - , - .

- 5 6. - - , . - , 4 .

1. . . . .:

, 2001. 530 .2. . . -

- // . -. 2009. 1 (75). . 48-53.

3. . ., ., . . . 2- . .: . . , 2007. 912 .

4. . ., . . - // .

2-

, 5 3,3 5 3,3

P,

0,07 0,028 0,04 0,02

,

..,

0,15 0,39 0,15 0,38

- ,

N, .36 30

,

L, *.0,378 0,392 0,18 0,21


2. . 2014. 3 (234). . 51-55.

References1. Ugryumov E. Tsifrovaya skhemotekhnika [Digital

circuitry]. St. Petersburg, BHV-Peterburg Publ., 2001, 530 p.

2. Kovalev A. V. The method for the designing of fast asynchronous digital devices with low energy consumption. Izvestiya vuzov. Elektronika

[Higher Education news. Electronics], 2009, 1, pp. 48-53.

3. Rabai J. M., Chandrakasan A., Nikolich B. Tsifrovye integralnye skhemy. Metodologiya proektirovaniya [Digital Integrated circuits. Design methodology]. 2nd edition. Moscow, LLC I. D. Williams Publ., 2007, 912 p.

4. Starykh A. A., Kovalev A. V. The development optimization of asynchronous adders. Elektronnaya tekhnika. Ser. 2. Poluprovodnikovye pribory [Electronic engineering. Ser. 2. Semiconductor devices], 2014, 3, pp. 51-55.

. 2. . 2-3 (236-237) 201570


621.382.323

. . , . . , . . - ,

394033, . , . , . 5

Sentaurus TCAD . : p-n - p- n-; - . . , .

: , , ,

: , , [email protected]; , ..., [email protected]; , ..-.., [email protected]

Simulation of BuffEr laYEr ParamEtErS influEncE on thE Static charactEriSticS of microWavE PoWEr Sic mESfEt

m. i. chernykh, v. a. Kozhevnikov, a. n. tsotsorinJSC Research Institute of Electronic Technology,

394033, Voronezh, Starykh Bolshevikov street, 5

Simulation of buffer layer parameters influence on electrical characteristics of microwave power SiC MESFET was carried out using Sentaurus TCAD. Two main processes of buffer layer influence were identified: first the decrease of channel layer effective thickness due to the propagation of space charge region of the p-n junction between the buffer layer and the channel region; second buffer layer leakage at a low dopant concentration. In this paper the basic dependencies of saturation current channel resistances and transistor threshold voltage on doping level and thickness of the buffer layer are investigated. Values of buffer layer parameters for a given supply voltage at which no leakage was detected are presented in the paperwork.

Keywords: SiC, simulation of semiconductor devices, MESFET, buffer layer

Data of authors: Chernykh Maksim Igorevich, postgraduate, [email protected]; Kozhevnikov Vladimir Andreevich, Ph.D., [email protected]; Tsotsorin Andrey Nikolaevich, Ph.D., [email protected]

-

.

[1].


-, : , [2]. - - (). - - . : p-, n- n+- - [3]. - . [4] - . [5] - . [6] - - . , - -. -

- .

-

- 50 . . 1 - . - - () p-n n- p-, .

- p-n (

kp-n)

n- p-:

,

kT , q -, n

i

, Nap N

dn

p n -. p-n - (L

p-n) :

.

. 1

. 2. . 2-3 (236-237) 201572

. ., . ., . .

:

.

- - , - - . - :

,

-, a - , b h . h - :

,

Wch . -

, - , h :

, (1)

Lg -

n- -, - (V

g).

(1) - (V

po), -

, - p-n - -

, , , :

. (2)

, - , - -, - , , .

- - . Sentaurus TCAD. 0,3 - 1017 -3. - - 0,3 1019 -3. - -, 1,5 . 10 . - . p- 0,5; 1; 3 6 . p- () 71013 31018 -3. - .

. . 2 - - -. , - . -


0,1 - . p-n - p-n - - 1016 -3 - p-n - 1018 -3.

- p-n -

- . - ( 1016 -3) - p-n - . . 3 - p-n - . -

. 2

. 3 p-n

-

. 2. . 2-3 (236-237) 201574

. ., . ., . .

, X .

- - ( 1 ) - . 4. , - - - p-n - . 1016 -3, - , - - - - . 1014 -3 1016 -3 10 %. - 1016 -3 - . - - p-n .

50 - - - .

. 5 - () - 0,5 - . , - -, . - 1016 -3 - - . , , -. - .

. - p-n - - (. 3). -

. 4 -

0,5 ( ), 1 ( ), 3 ( ) 6 (- )


. - 1016 -3 - . . 6 - - 50 1015 -3 51016 -3.

- p-n - -

p-n , , . - . - - - . - - . . 7 - - 1015 1016 -3.

. 5

(a) (). 6

50 . 1015 -3 () 51016 -3 ()

. 2. . 2-3 (236-237) 201576

. ., . ., . .

- . 8. - - , - - . - . - - , - . : - 0,5 51016 -3;

1 31016 -3; 3 6 21016 -3.

, , - 50 - - -, , . - . . 9 - - , .

(a) (). 7

50 . : 1015 -3 (), 1016 -3 ()

. 8 -

0,5 ( ), 1 ( ), 3 ( ) 6 (- )


- . - . 10. - .

- ( 1016 -3). , . -

. , - - , . . 11. 0,5 1 1015 -3 -

. 9

0,5 ( ), 1 ( ), 3 ( ) 6 (- )

. 10

0,5 ( ), 1 ( ), 3 ( ) 6 (- )

. 2. . 2-3 (236-237) 201578

. ., . ., . .

. - p-n - , - . - - 0,5 1 - - 1015 -3.

- , - p-n - . 1015 -3 0,5 51014 -3 - 1 - . - , - - -, -. - -

, -, -. - , - . - - 3 6 - 51014 -3.

, - , - . , - , - - p-n - . - (2).

-, - - . - p-n . - -

. 11


- , . - 20 . 12.

0,5 1 , - p-n . - . - - . - 21015 -3 0,5 , 31014 -3 1 - .

- . , - -

- . . - - - , . , , . - - - , - : 0,5 51016 -3, 1 31016 -3 - 3 6 21016 -3.

1. ., . SiC-. ,

, // : , -, . 2006. 5. . 28-41.

2. Wide bandgap semiconductors. Growth, Processing and Applications. Edited by J. Pearton // Noyes Publications, 2000.

. 12

20 , 0,5 ( ), 1 ( ), 3 ( ) 6 (- )

. 2. . 2-3 (236-237) 201580

. ., . ., . .

3. . ., . ., . ., - . ., . ., . . - 4H-SiC - // -. 1. -. 2007. . 3 (491). . 3-9.

4. Sankha S. Mukherjee, Syed S. Islam, Int. J. Hi. Spe. Ele. Syst. 14, 890 (2004).

5. Razav S. M., Ali A. Orouji, Seyed Ebrahim Hosseini Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics // Materials Science in Semiconductor Processing, 2012.

6. Deng Xiao-Chuan, Sun He, Rao Cheng-Yuan et al. High-power SiC MESFET using dual p-buffer layer for S-band power amplifier // Chin. Phys. B., 2013, 22 (1).

References1. Lebedev A., Sbruev S. SiC based electronics. Past,

Present and Future. Elektronika: Nauka, Tekhnologiya,

Biznes [Electronics: Science, Technology, Business]. 2006, 5, pp. 28-41.

2. Widebandgap semiconductors. Growth, Processing and Applications. Edited by J. Pearton // Noyes Publications, 2000.

3. Gudkov V. A., Mokeev A. S., Zemlyakov V. E., Vasilyev V. I., Rastegaev V. P., Shapoval S. Y. 4H-SiC based MESFET and evaluation of its microwave parameters. Elektronnaya tekhnika. Ser. 1. SVCH-tekhnika [Electronic Engineering. Ser. 1. Microwave engineering], 2007, 3, pp. 3-9.

4. Sankha S. Mukherjee, Syed S. Islam, Int. J. Hi. Spe. Ele. Syst. 14, 890 (2004).

5. Razav S. M., Ali A. Orouji, Seyed Ebrahim Hosseini Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics // Materials Science in Semiconductor Processing, 2012.

6. Deng Xiao-Chuan, Sun He, Rao Cheng-Yuan et al. High-power SiC MESFET using dual p-buffer layer for S-band power amplifier // Chin. Phys. B., 2013, 22 (1).

. 2. . 2-3 (236-237) 201582


621.382.2:621.3.015.51.77

P-n

. . , . . . .. ,

430005, , . , ., 68

p+-n . , - p+-n . - Synopsys TCAD.

: p-n , , , ,

: , ..-.., , [email protected]; , , [email protected]

thE EffEct of a thin laYEr of high imPuritY concEntration on thE BrEaKdoWn voltagE of thE P-n junction

v. P. Paderov, d. S. SilkinMordovia State University named after N.P. Ogarev,

43000568, Mordovia Republic, Saransk, Bolshevistskaya street, 68

In the given research, the analytical model of the effect of a thin layer of high impurity concentration on the breakdown voltage of p-n junction was developed. The influence of the dose of impurities in the layer, the position in the space charge region and the area of the layer on the breakdown voltage of p-n junction was shown. The results of the analytical model are compared with the results of the two-dimensional simulation in the Synopsys TCAD program.

Keywords: p-n junction, avalanche breakdown, thin doping layer, modeling, breakdown voltage

Data of authors: Paderov Victor Petrovich, Ph.D., associate professor, [email protected]; Silkin Denis Sergeevich, postgraduate, [email protected]

-

[1]. -

, -

,

-

.

- n- N- [2]. - [3].

- N-, N- -


p-n

p+-n , - - p+-n N-.

1. p+-n N-

- p+-n . , N- - - N

d, R

p

Rp, -

, . - p+-n N- [4] - . 1. X

m -

p+-n , .

- N-, , - . . 1 .

N- - , . 1 , E

max = E

crit -

, - . , - N- -, - . 1. : I, II III.

- X

m = 0,

N- :

. 1 p+-n n-

( ) n- ( ), (X1 = Rp Rp, X2 = Rp + Rp)

Vb = (E

1 + E

crit) (R

p R

p) + R

p (E

1 + E

2) + E

2(W ' R

p R

p), (1)

E1 = E

crit

1(R

p R

p),

E2 = E

1

2(2R

p),

12

12

. 2. . 2-3 (236-237) 201584

. ., . .

1 = qN

d / (

0s),

2 = qN

d' / (

0s); E

1,

2

N-, ; N

d, N

d

N- n-, -;

0s -

; q -. W - N-.

1

2

- N- N

D(2R

p), , -

- , p-n N-. N- p-n - , - .

, E

crit ,

N- - , 20 % 30 % - () - , [5]. N- , E

crit , -

-, N- - . , N- - , N- - , - E

crit R

p N-.

2. N- p+-n

N-

(. 1). N-, - -, , - . R

p

, - -. , R

p

- .

Ecrit R

p

, - [1] - [6].

[1]:

eff(E(x))dx = 1, (2)

eff -

, -:

eff(E) = C ,

n C , :

n = beff / E

0,

C = effe -n.

eff b

eff -

[7],

eff = 1,06106 -1,

beff = 1,68106 / [1]. -

E(x), (2) (3).

. (3) (4).

W '

0

En

E0

W' = + (Rp + R

p),

E2

1


p-n

. 3 . -, , R

p, -

- , . , N- . , . 3 , - N-, , .

. 2 , ,

n-

C dx + C dx + C dx = 1. (3)R

p + R

p

Rp R

p

W'

Rp + R

p

R

p R

p

0

Ecrit

1x n

E0

E1

2x n

E0

E2

1x n

E0

Enorm

(Enorm

K1)n+1 + (E

norm K

2)n+1+ [(E

norm K

1)n+1 (E

norm K

2)n+1] K

3, (4)n+1

Nd

N'd

K1 = ,

1(R

p R

p)

E0

K3 = ,

1(n + 1)

CE

norm = .

Ecrit

E0

K2 = ,

2(2R

p) +

1(R

p R

p)

E0

(4) . - p+-n 9 -: N

d = 1,131013 -3, E

0 = 1,5105 /,

Rp = 5 , N

d = 1,131014 -3.

- p+-n 200 [8]. - E

crit(R

p) . 2.

Ecrit -

(1), V

b(R

p).

. 2. . 2-3 (236-237) 201586

. ., . .

3. -

- - p+-n ,

,

Synopsys

TCAD. -

. a

. 4 p+-n n- - Synopsys tcad ( n- -

; n- )

. 3 p+-n n- n-


p-n

b - - [1]. E

crit(R

p-X

m), V

b(R

p-X

m) -

. 2 3 .

Ecrit 1 %.

- 0,5 %. - p+-n N- Synopsys TCAD, , , - .

N-, , - , - - r. N- - - p-n . - N-

. - () x, N- (. 4). - , - N-.

p+-n N-, - - Synopsys TCAD, . 5.

. 5 , N- - -, p+-n - .

1. N- -

p-n , -

. 5 p+-n r n- Synopsys tcad ( 1000 ,

3000 )

. 2. . 2-3 (236-237) 201588

. ., . .

N- N- - .

2. N- p-n , - , - . - , N- - , - .

3. p-n N- N-, - - , N-, - - p-n .

1. Semiconductor Power Devices, Physics, Characteristics,

Reliability / Lutz J., Schlangenotto H., Scheuermann U. etc., Heidelberg, Springer, 2011, 538 .

2. . 2410795 . - - . 2009128410/28; . 22.07.2009; . 27.07.09, . 3. 11 c.

3. Klug N., Lutz J., Meijer J. B. N-type doping of silicon by proton implantation // Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference, Birmingham, 2011, pp. 1-7.

4. . : 2- . . 1: [. .]. . 2-, . . .: , 1984. 456 .

5. . ., . . p-n . : , 1980. 152 .

6. Shields J. Breakdown in Silicon p-n Junctions // Journ. Electron. Control, 1959, vol. 6, pp. 132-148.

7. Chynoweth A. G. Ionization rates for electrons and holes in silicon // Phys. Rev., 1958, vol. 109, pp. 1537-1540.

8. . ., . . - p-n // -- : , , : . . . . . 3 : . ., 2003. . 116-120.

References1. Semiconductor Power Devices, Physics, Characteristics,

Reliability / Lutz J., Schlangenotto H., Scheuermann U. etc., Heidelberg, Springer, 2011, 538 p.

2. Power semiconductor device with regulating switching voltage: patent 2410795 Russia 2009128410/28; submitted 22.07.2009, published 27.07.2009, Bulletin 3, 11 p.

3. Klug N., Lutz J., Meijer J. B. N-type doping of silicon by proton implantation // Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference, Birmingham, 2011, pp. 1-7.

4. Zi S. Fizika poluprovodnikovykh priborov [Physics of semiconductor devices]. Moscow, Mir Publ., 1984, Vol. 1, 456 p.

5. Grekhov I. V., Serezhkin Y. N. Lavinny proboy p-n perekhoda v poluprovodnikakh [Avalanche breakdown on p-n junction in semiconductors]. Leningrad, Energiya Publ., 1980, 152 p.

6. Shields J. Breakdown in Silicon p-n Junctions // Journ. Electron. Control, 1959, vol. 6, pp. 132-148.

7. Chynoweth A. G. Ionization rates for electrons and holes in silicon // Phys. Rev., 1958, vol. 109, pp. 1537-1540.

8. Serezhkin Y. N., Shesterkina A. A. Research on effective ionization region during the avalanche breakdown of silicon p-n junction. Estestvenno-tekhnicheskie issledovaniya: teoriya, metody, praktika: mezhvuzovskiy sbornik nauchnykh trudov [Natural and technical research: theory, techniques, practice: inter-high-school collection of scientific papers], Saransk, Kovylk. Printing, 2003, Vol. 3, pp. 116-120.



621.3.049.77

SEntauruS tcad

. . , . . ,

630082, . , . , 60 ,

, 630102, . , . , 86

Электронная техника -...

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